In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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1 Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of or use Instead of sales.addresses@ or sales.addresses@ use salesaddresses@nexperia.com ( ) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). ll rights reserved or Koninklijke Philips Electronics N.V. (year). ll rights reserved Should be replaced with: - Nexperia B.V. (year). ll rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

2 Dual 4-channel analog multiplexer/demultiplexer with injection-current Rev July 2012 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are specified in compliance with JEDEC standard no. 7. The are dual 4-channel analog multiplexers/demultiplexers with common select inputs (S0 and S1). Both multiplexers have a common active LOW enable input (E), four independent inputs/outputs (ny0 to ny3) and two common inputs/outputs (1Z, 2Z). The devices feature injection-current effect control, which has excellent value in automotive applications where voltages in excess of the supply voltage are common. With E LOW, two of the eight switches are selected (low impedance ON-state) by S0 and S1. With E HIGH, all switches are in the high-impedance OFF-state, independent of S0 and S1. The injection-current allows signals at disabled analog input channels to exceed the supply voltage without affecting the signal of the enabled analog channel. This eliminates the need for external diode/resistor networks typically used to keep the analog channel signals within the supply-voltage range. This product has been qualified to the utomotive Electronics Council (EC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits utomotive product qualification in accordance with EC-Q100 (Grade 1) Specified from 40 C to +85 C and from 40 C to +125 C Injection-current cross coupling < 1 mv/m Wide supply voltage range from 2.0 V to 6.0 V for 74HC4852-Q100 ESD protection: MIL-STD-883, method 3015 exceeds 2000 V HBM JESD22-114F exceeds 2000 V MM JESD exceeds 200 V (C = 200 pf, R = 0 ) Latch-up performance exceeds 100 m per JESD 78 Class II level Low ON-state resistance: 400 (typical) at =2.0V 215 (typical) at =3.0V 120 (typical) at =3.3V 76 (typical) at =4.5V 59 (typical) at =6.0V

3 3. pplications 4. Ordering information nalog multiplexing and demultiplexing Digital multiplexing and demultiplexing Signal gating utomotive application Table 1. Type number Ordering information Package 5. Functional diagram Temperature range Name Description Version 74HC4852D-Q100 74HCT4852D-Q C to +125 C SO16 plastic small outline package; 16 leads; body width 3.9 mm 74HC4852PW-Q C to +125 C TSSOP16 plastic thin shrink small outline package; 16 leads; 74HCT4852PW-Q100 body width 4.4 mm 74HC4852BQ-Q C to +125 C DHVQFN16 plastic dual in-line compatible thermal enhanced 74HCT4852BQ-Q100 very thin quad flat package; no leads; 16 terminals; body mm SOT109-1 SOT403-1 SOT G Z 1Y S0 9 S1 6 E 2Z 1Y1 14 1Y2 15 1Y3 11 2Y0 1 2Y1 5 2Y2 2 2Y MUX/DMUX aag aag094 Fig 1. Logic symbol Fig 2. IEC logic symbol Product data sheet Rev July of 21

4 16 INJECTION CURRENT CONTROL 13 1Z INJECTION CURRENT CONTROL 12 1Y0 INJECTION CURRENT CONTROL 14 1Y1 S OF-4 DECODER INJECTION CURRENT CONTROL INJECTION CURRENT CONTROL Y2 1Y3 S1 9 INJECTION CURRENT CONTROL INJECTION CURRENT CONTROL 1 5 2Y0 2Y1 E 6 INJECTION CURRENT CONTROL INJECTION CURRENT CONTROL 2 4 2Y2 2Y3 INJECTION CURRENT CONTROL 3 2Z 8 001aag095 Fig 3. Functional diagram Product data sheet Rev July of 21

5 6. Pinning information 6.1 Pinning 74HC4852-Q100 74HCT4852-Q100 74HC4852-Q100 74HCT4852-Q100 2Y terminal 1 index area 2Y0 VCC 2Y Y2 2Y Y2 2Z Y1 2Z Y1 2Y Z 2Y Z 2Y1 E Y0 1Y3 2Y1 E n.c (1) Y0 1Y3 S0 n.c S S1 S1 aaa aaa Transparent top view (1) This is not a supply pin. The substrate is attached to this pad using conductive die attach material. There is no electrical or mechanical requirement to solder this pad. However, if it is soldered, the solder land should remain floating or be connected to. Fig 4. Pin configuration SO16 and TSSOP16 Fig 5. Pin configuration DHVQFN Pin description Table 2. Pin description Symbol Pin Description 2Y0 1 independent input/output 2Y2 2 independent input/output 2Z 3 common input/output 2Y3 4 independent input/output 2Y1 5 independent input/output E 6 enable input (active LOW) n.c. 7 not connected 8 ground (0 V) S1 9 select input S0 10 select input 1Y3 11 independent input/output 1Y0 12 independent input/output 1Z 13 common input/output 1Y1 14 independent input/output 1Y2 15 independent input/output 16 supply voltage Product data sheet Rev July of 21

6 7. Functional description Table 3. Function table [1] Input Channel ON E S1 S0 L L L ny0 to nz L L H ny1 to nz L H L ny2 to nz L H H ny3 to nz H X X - [1] H = HIGH voltage level; L = LOW voltage level; X = don t care. 8. Limiting values Table 4. Limiting values In accordance with the bsolute Maximum Rating System (IEC 60134). Voltages are referenced to (ground = 0 V). Symbol Parameter Conditions Min Max Unit supply voltage V V I input voltage [1] V V SW switch voltage [2] V I IK input clamping current V I < 0.5 V or V I > V - 20 m I SK switch clamping current V SW < 0.5 V or V SW > V - 20 m I SW switch current V SW > 0.5 V or V SW < V - 25 m I CC supply current - 50 m I ground current 50 - m T stg storage temperature C P tot total power dissipation T amb = 40 C to +125 C [3] mw [1] The minimum and maximum input voltage rating may be exceeded if the input clamping current rating is observed. [2] The minimum and maximum switch voltage rating may be exceeded if the switch clamping current rating is observed. [3] For SO16 package: P tot derates linearly with 8 mw/k above 70 C. For TSSOP16 package: P tot derates linearly with 5.5 mw/k above 60 C. For DHVQFN16 packages: P tot derates linearly with 4.5 mw/k above 60 C. Product data sheet Rev July of 21

7 9. Recommended operating conditions Table 5. Recommended operating conditions Symbol Parameter Conditions 74HC4852-Q100 74HCT4852-Q100 Unit 10. Static characteristics Min Typ Max Min Typ Max supply voltage V V I input voltage V V SW switch voltage V T amb ambient temperature C t/ V input transition rise and fall rate = 2.0 V ns/v = 3.0 V ns/v = 3.3 V ns/v = 4.5 V ns/v = 6.0 V ns/v Table 6. R ON resistance t recommended operating conditions; voltages are referenced to (ground 0 V); For test circuit see Figure 8. Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit 74HC4852-Q100 R ON(peak) ON resistance (peak) R ON ON resistance mismatch between channels 74HCT4852-Q100 R ON(peak) ON resistance (peak) R ON ON resistance mismatch between channels Min Typ Max Min Max Min Max V I = to ; E = V IL = 2.0 V; I SW = 2 m = 3.0 V; I SW 2 m = 3.3 V; I SW 2 m = 4.5 V; I SW 2 m = 6.0 V; I SW 2 m V I = 0.5 ; E = V IL = 2.0 V; I SW = 2 m = 3.0 V; I SW 2m = 3.3 V; I SW 2 m = 4.5 V; I SW 2 m = 6.0 V; I SW 2 m V I = to ; E = V IL = 4.5 V; I SW 2 m V I = 0.5 ; E = V IL = 4.5 V; I SW 2 m Product data sheet Rev July of 21

8 Table 7. Injection current coupling t recommended operating conditions; voltages are referenced to (ground 0 V); For test circuit see Figure 9. Symbol Parameter Conditions 74HC4852/Q100 74HCT4852/Q100 Unit Min Typ [1] Max Min Typ [1] Max T amb = 40 C to +125 C V O output voltage I SW 1 m; R S 3.9 k [2][3] variation = 3.3 V mv = 5.0 V mv I SW 10 m; R S 3.9 k = 3.3 V mv = 5.0 V mv I SW 1 m; R S 20 k = 3.3 V mv = 5.0 V mv I SW 10 m; R S 20 k = 3.3 V mv = 5.0 V mv [1] Typical values are measured at T amb = 25 C. [2] V O here is the maximum variation of output voltage of an enabled analog channel when current is injected into any disabled channel. [3] I SW = total current injected into all disabled channels. Table 8. Static characteristics t recommended operating conditions; voltages are referenced to (ground 0 V). 25 C 40 C to +85 C 40 C to +125 C Symbol Parameter Conditions Min Typ Max Min Max Min Max Unit 74HC4852-Q100 V IH HIGH-level control inputs input = 2.0 V V voltage = 3.0 V V = 3.3 V V = 4.5 V V = 6.0 V V V IL LOW-level control inputs input = 2.0 V V voltage = 3.0 V V = 3.3 V V = 4.5 V V = 6.0 V V I I input leakage current control inputs; V I =or = 6.0 V Product data sheet Rev July of 21

9 Table 8. Static characteristics continued t recommended operating conditions; voltages are referenced to (ground 0 V). 25 C 40 C to +85 C 40 C to +125 C Symbol Parameter Conditions Min Typ Max Min Max Min Max Unit I S(OFF) I S(ON) I CC C I C sw OFF-state leakage current ON-state leakage current supply current input capacitance switch capacitance 74HCT4852-Q100 V IH HIGH-level input voltage V IL LOW-level input voltage I I input leakage current I S(OFF) I S(ON) I CC I CC C I C sw OFF-state leakage current ON-state leakage current supply current additional supply current input capacitance switch capacitance E = V IH ; V I = or ; V O = or ; = 6.0 V; see Figure 6 nyn; per channel nz; all channels E = V IL ; V I = or ; V O = or ; = 6.0 V; see Figure 7 V I = or = 6.0 V S0, S1, S2 and E pf nz; OFF-state pf nyn; OFF-state pf control inputs = 4.5 V to 5.5 V V control inputs = 4.5 V to 5.5 V V control inputs; V I =or = 5.5 V E = V IH ; V I = or ; V O = or ; = 5.5 V; see Figure 6 per channel all channels E = V IL ; V I = or ; V O = or ; = 5.5 V; see Figure 7 V I = or = 5.5 V control inputs; V I = 2.1 V; other inputs at or ; = 4.5 V to 5.5 V; I O =0 S0, S1, S2 and E pf nz; OFF-state pf nyn; OFF-state pf Product data sheet Rev July of 21

10 I S nyn selected channel (1) VI nz n.c. V IH E V IL E VI I S nyn nz I S VO VO nyn any disabled channel 001aag aag099 (1) Channel is selected by S0 and S1. Fig 6. Test circuit for measuring OFF-state leakage current Fig 7. Test circuit for measuring ON-state leakage current V I (1) any disabled channel nyn ISW VSW nz V V IL E V IL E nyn nz V I (2) RS nyn selected channel (1) VI ISW VI V O 001aag aag101 R ON = V SW / I SW. (1) Channel is selected by S0 and S1. V (1) I < or V (1) I >. < V (2) I <. Fig 8. Test circuit for measuring ON resistance Fig 9. Test circuit for injection current coupling Product data sheet Rev July of 21

11 11. Dynamic characteristics Table 9. Dynamic characteristics t recommended operating conditions; voltages are referenced to (ground 0 V); for load circuit see Figure 14. Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max 74HC4852-Q100 t pd propagation delay nz, nyn to nyn, nz; see Figure 10 [1] = 2.0 V ns = 3.0 V ns = 3.3 V ns = 4.5 V ns = 6.0 V ns Sn to nz, nyn; [1] see Figure 11 = 2.0 V ns = 3.0 V ns = 3.3 V ns = 4.5 V ns = 6.0 V ns t en enable time E to nz, nyn; see Figure 12 [2] = 2.0 V ns = 3.0 V ns = 3.3 V ns = 4.5 V ns = 6.0 V ns t dis disable time E to nz, nyn; see Figure 12 [3] = 2.0 V ns = 3.0 V ns = 3.3 V ns = 4.5 V ns = 6.0 V ns C PD power dissipation capacitance per channel; [4] see Figure 13 = 3.3 V pf = 5.0 V pf Product data sheet Rev July of 21

12 Table 9. Dynamic characteristics continued t recommended operating conditions; voltages are referenced to (ground 0 V); for load circuit see Figure 14. Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max 74HCT4852-Q100 t pd propagation delay nz, nyn to nyn, nz; see Figure 10 [1] = 4.5 V ns Sn to nz, nyn; [1] see Figure 11 = 4.5 V ns t en enable time E to nz, nyn; see Figure 12 [2] = 4.5 V ns t dis disable time E to nz, nyn; see Figure 12 [3] = 4.5 V ns C PD power dissipation capacitance [1] t pd is the same as t PLH and t PHL. [2] t en is the same as t PZH and t PZL. [3] t dis is the same as t PLZ and t PHZ. [4] C PD is used to determine the dynamic power dissipation (P D in W): P D =C PD 2 f i + {(C L +C sw ) 2 f o } where: f i = input frequency in MHz; f o = output frequency in MHz; {(C L +C sw ) 2 f o } = sum of outputs; C L = output load capacitance in pf; C sw = switch capacitance in pf; = supply voltage in V. 12. Waveforms per channel; [4] see Figure 13 = 5.0 V pf nz or nyn input 0.5 t PLH t PHL nyn or nz output aah578 Fig 10. Input (nz, nyn) to output (nyn, nz) propagation delays Product data sheet Rev July of 21

13 V I Sn input V M nyn or nz output V M t PLH t PHL 001aah579 Measurement points are given in Table 10. Fig 11. Input (Sn) to output (nyn, nz) propagation delays V I E input V M V M 0 V t PLZ t PZL nz or nyn output V M V OL V X t PHZ t PZH nz or nyn output V OH V Y V M switch ON switch OFF switch ON 001aah580 Fig 12. Measurement points are shown in Table 10. Logic levels: V OL and V OH are typical output voltage levels that occur with the output load. Enable and disable times Table 10. Measurement points Type Input Output V M V I V M V X V Y 74HC4852-Q V OL + 0.1( V OL ) 0.9V OH 74HCT4852-Q V 3.0 V 0.5 V OL + 0.1( V OL ) 0.9V OH Product data sheet Rev July of 21

14 nyn selected channel G Sn E nz n.c. nyn disabled channel 001aah581 Fig 13. Test circuit for measuring power dissipation capacitance Product data sheet Rev July of 21

15 V I negative pulse 0 V V I positive pulse 0 V t W 90 % 90 % V M V M 10 % t f t r t r t f 90 % V M V M 10 % 10 % t W 001aac221 a. Input pulse definition switch open G VI DUT VO RL RT CL 001aaf883 Definitions for test circuit: R L = load resistance. C L = load capacitance including jig and probe capacitance. R T = termination resistance should be equal to the output impedance Z o of the pulse generator. b. Load circuit Test data is given in Table 11. Fig 14. Input pulse definition and load circuit Table 11. Test data Test Input Output S1 position Control E, Sn Switch nyn (nz) t r, t f Switch nz (nyn) V [1] I V I C L R L t PHL, t PLH 6ns 50pF - open t PHZ, t PZH 6ns 50pF 10k t PLZ, t PZL 6ns 50pF 10k C PD 6ns 0 pf - open [1] For 74HCT4852-Q100: input voltage V I = 3.0 V. Product data sheet Rev July of 21

16 13. Package outline SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E X c y H E v M Z 16 9 Q 2 1 ( ) 3 pin 1 index θ L p 1 8 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max b p c D (1) E (1) e H (1) E L L p Q v w y Z Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT E07 MS Fig 15. Package outline SOT109-1 (SO16) Product data sheet Rev July of 21

17 TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1 D E X c y H E v M Z 16 9 pin 1 index 2 1 Q ( ) 3 θ 1 8 e b p w M detail X L p L mm scale DIMENSIONS (mm are the original dimensions) UNIT b p c D (1) E (2) e H (1) E L L p Q v w y Z max. mm θ o 8 o 0 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT403-1 MO-153 EUROPEN PROJECTION ISSUE DTE Fig 16. Package outline SOT403-1 (TSSOP16) Product data sheet Rev July of 21

18 DHVQFN16: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 16 terminals; body 2.5 x 3.5 x 0.85 mm SOT763-1 D B E 1 c terminal 1 index area detail X terminal 1 index area e 1 e b 2 7 v M w M C C B y 1 C C y L 1 8 E h e D h X mm scale DIMENSIONS (mm are the original dimensions) UNIT (1) max. 1 b c D (1) D h E (1) Eh e e1 L v w y y 1 mm Note 1. Plastic or metal protrusions of mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT MO EUROPEN PROJECTION ISSUE DTE Fig 17. Package outline SOT763-1 (DHVQFN16) Product data sheet Rev July of 21

19 14. bbreviations Table 12. cronym CDM CMOS DUT ESD HBM MM bbreviations Description Charged Device Model Complementary Metal Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Machine Model 15. Revision history Table 13. Revision history Document ID Release date Data sheet status Change Supersedes notice 74HC_HCT4852_Q100_ Product data sheet - - Product data sheet Rev July of 21

20 16. Legal information 16.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet short data sheet is an extract from a full data sheet with the same product type number(s) and title. short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. pplications pplications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the bsolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Product data sheet Rev July of 21

21 No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations non-english (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions Trademarks Notice: ll referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Product data sheet Rev July of 21

22 18. Contents 1 General description Features and benefits pplications Ordering information Functional diagram Pinning information Pinning Pin description Functional description Limiting values Recommended operating conditions Static characteristics Dynamic characteristics Waveforms Package outline bbreviations Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V ll rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 12 July 2012 Document identifier: 74HC_HCT4852_Q100