The Essence of Three-Phase PFC Rectifier Systems - Part I

Transcription

1 2013 IEEE IEEE Trstios o Power Eletrois, Vol. 28, No. 1, , Jury 2013 The Essee of Three-Phse PF Retifier Systems - Prt I J. W. Kolr, T. Friedli This mteril is ulished i order to rovide ess to reserh results of the Power Eletroi Systems ortory / D-ITET / ETH Zurih. Iterl or ersol use of this mteril is ermitted. However, ermissio to rerit/reulish this mteril for dvertisig or romotiol uroses or for retig ew olletive works for resle or redistriutio must e otied from the oyright holder. By hoosig to view this doumet, you gree to ll rovisios of the oyright lws rotetig it.

2 176 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 The Essee of Three-Phse PF Retifier Systems Prt I Joh W. Kolr, Fellow, IEEE, d Thoms Friedli, Memer, IEEE Astrt I the first rt of this er, three-hse ower ftor orretio (PF) retifier toologies with siusoidl iut urrets d otrolled outut voltge re derived from kow sigle-hse PF retifier systems d/or ssive three-hse diode retifiers. The systems re lssified ito hyrid d fully tive ulsewidth modultio oost-tye or uk-tye retifiers, d their futiolity d si otrol oets re riefly desried. This filittes the uderstdig of the oertig riile of three-hse PF retifiers strtig from sigle-hse systems, d orgizes d omletes the kowledge se with ew hyrid three-hse uktye PF retifier toology deomited s SWISS Retifier. Filly, ore tois of future reserh o three-hse PF retifier systems re disussed, suh s the lysis of ovel hyrid uk-tye PF retifier toologies, the diret iut urret otrol of uk-tye systems, d the multi-ojetive otimiztio of PF retifier systems. The seod rt of this er is dedited to omrtive evlutio of four retifier systems offerig high otetil for idustril litios sed o simle d demostrtive erforme metris oerig the semiodutor stresses, the lodig d volume of the mi ssive omoets, the differetil mode d ommo mode eletromgeti iterferee oise level, d ultimtely the hievle overter effiiey d ower desity. The results re susttited with seleted exmles of hrdwre rototyes tht re otimized for effiiey d/or ower desity. Idex Terms A overter, oost, uk, overview, ulsewidth modultio (PWM) retifier, PF retifier, ower ftor orretio (PF), retifier, review, Swiss retifier, three-hse. I. INTRODUTION THE POWER eletrois suly of high-ower eletril systems from the three-hse mis is usully rried out i two stges, i.e., the mis voltge is first overted ito d voltge d the dted to the lod voltge level with d d overter with or without glvi isoltio (f., Fig. 1). Ofte oly oe diretio of ower flow hs to e rovided; furthermore, oulig to the mis is tyilly imlemeted over oly three odutors, i.e., without eutrl odutor. I the simlest se, the retifitio e doe y uidiretiol three-hse diode retifiers with itive smoothig of the outut voltge d idutors o the or d side (f., Fig. 2). The low omlexity d high roustess (o otrol, sesors, Musrit reeived Deemer 29, 2011; revised Aril 2, 2012; eted Aril 18, Dte of urret versio Setemer 11, Reommeded for ulitio y Assoite Editor B. ehm. J. W. Kolr is with the Power Eletroi Systems ortory, Swiss Federl Istitute of Tehology, Zurih 8092, Switzerld (e-mil: kolr@ lem.ee.ethz.h). T. Friedli ws with the Power Eletroi Systems ortory, Swiss Federl Istitute of Tehology, Zurih 8092, Switzerld. He is ow with ABB Switzerld td., Turgi 5300, Switzerld (e-mil: thoms.friedli@ieee.org). olor versios of oe or more of the figures i this er re ville olie t htt://ieeexlore.ieee.org. Digitl Ojet Idetifier /TPE () () () A A A A Fig. 1. Blok digrms of tyil overter ofigurtios for sulyig eletril lods from the three-hse mis. () Three-hse d overter with oisolted d d overter (e.g., for the oulig of d distriutio systems to the three-hse mis or s mis iterfe for high-ower isolted lods, e.g., lightig systems). () Three-hse d overter with isolted d d overter (e.g., for teleom ower sulies, welders, or idutio hetig systems). () Three-hse d overter d three-hse d overter (iverter) without isoltio (e.g., for vrile seed drives). uxiliry sulies, or eletromgeti iterferee (EMI) filterig) of this oet must, however, e weighed gist the disdvtges of reltively high effets o the mis d uregulted outut voltge diretly deedet o the mis voltge level. The mis ehvior of ower overter is hrterized, i geerl, y the ower ftor λ, d/or the fudmetl urretto-voltge dislemet gle Φ, d the totl hrmoi distortio of the iut urret THD i whih re relted y the equtio P N P N A B λ = 1 os (Φ). (1) 1+THD 2 i The odutio stte of the ssive retifiers show i Fig. 2() d () is essetilly determied y the mis lie-to-lie voltges, wherey oly two diodes rry urret t the sme time, exet the ommuttio itervls. This mes tht eh diode of the ositive d egtive ridge hlves rries urret oly for oe third of the mis eriod, i.e., for 120. Hee, the hse urrets for idustrilly lile vlues of the smoothig idute show 60 -wide itervls with zero urret tht result i reltively high low-frequey hrmoi otet or THD i 30%. I order to void voltge distortios resultig from voltge dros ross the ier (idutive) mis imede or the exittio of resoes i the distriutio grid THD i < 5% t rted ower is ofte required. For irrft o-ord ower sulies, reltively high ier mis imedes exist d thus eve striter limits, i.e., THD i < 3% /$ IEEE

3 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 177 i i u u u () () Voltge (v) u, (2mH) u N i, (2mH) i, (20mH) u, (20mH) urret (A) Voltge (v) u N i, (20mH) i, (5mH) u u () t (ms) 20 (d) t (ms) 1.0 U,orm 1.0 U,orm U,orm, U,orm, λ (e) 0.7 = 2 mh = 20 mh XÎ (1)/Û N = 5 mh = 20 mh (f) XÎ (1)/Û N Fig. 2. Pssive three-hse diode retifitio. ) Smoothig idutors o the side. ()Smoothig idutor o the d side. ()d (d)orresodigiut urret wveforms. (e) d (f) Normlized glol verge vlue U,orm = π/(3 2) U /U N,ll,rms of the glol verge outut voltge U d ower ftor λ t the iut. (Simultio rmeters: rms lie-to-lie voltge U N,ll,rms = 400 V, mis frequey f N =50Hz, smoothig ite o the d side =1mF, d smoothig idute =[1mH...45 mh] with X =2πf N.) (f., DO160F, MI-461F), hve to e fulfilled. This mis urret qulity e hieved oly y mes of tive ower ftor orretio (PF) retifier systems. It should e oted tht for three-hse systems, the geerlly used desigtio PF Retifier is rtly misledig, sie ssive retifiers, for idustrilly used vlues of the smoothig idute [X Î (1) /ÛN = ordig to Fig. 2(e) d (f)], lredy exhiit high-ower ftor of λ = euse of the low hse-shift of the owerformig mis urret fudmetl omoet d the ssoited hse voltge (f., (1) for os (Φ) = 1 d THD i 30%, [1], [2]). PF retifiers, hee, hieve with regrd to the mis urret (t rted oertio) ove ll redutio of the urret hrmois ut oly slight imrovemet i the ower ftor (λ > 0.99 t the rted oertig oit is tyilly trgeted). A further imortt set of the use of tive (PF) retifier systems is the ossiility to otrol the outut d voltge to ostt vlue, ideedet of the tul mis voltge (Euroe: U N,ll,rms = 400 V; USA: U N,ll,rms = 208 V; J: U N,ll,rms = 173 V, U N,ll,rms deomites the rms vlue of the mis lieto-lie voltge). A overter stge o the outut side (f., Fig. 1), thus, e dimesioed to rrow voltge rge. The mis voltge rge must e osidered oly for the dimesioig of the retifier stge (the delivery of give rted ower, e.g., t hlf of the iut voltge, leds to doulig of the iut urret tht must e mstered y the ower semiodutors, ssive ower omoets d the EMI filter) or reltively high d well-defied voltge level is ville for the geertio of the outut (lod) voltge [f., Fig. 1()]. The requiremets led o tive PF retifier systems, thus, e summrized s follows:

4 178 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY ) siusoidl iut urret ordig to regultios regrdig the mis ehvior of three-hse retifier systems (EN if < 16 A, if > 16 A); i idustry, however, tyilly ideedet of the orete litio, THD i < 5% is required (t the rted oertig oit); 2) ohmi fudmetl mis ehvior (os (Φ) > 0.99); 3) regulted outut voltge; deedig o the required level of the outut d voltge reltive to the mis voltge, system with oost-, uk-, or uk oost-tye hrteristi hs to e rovided; 4) msterig of mis hse filure, i.e., for iterrutio of oe mis hse, otiued oertio t redued ower d uhged siusoidl urret she should e ossile; 5) uidiretiol ower flow, erhs with (limited) ility of retive ower omestio. Ofte, euse of the suly of urely ssive lod (e.g., teleom ower suly), oly uidiretiol eergy oversio hs to e rovided or s for irrft o-ord ower sulies, o feedk of eergy ito the mis is ermitted; 6) omlie with seifitios regrdig eletromgeti, eseilly oduted iterferee emissios y mes of suitle EMI filterig. The desigtio three-hse PF retifier hose i this er imlies oth siusoidl mis urret shig d regultio of the d outut voltge. Here, it should e oted tht tive hrmoi filter [3] of lower rted ower rrged i rllel to ssive retifier system would lso ele siusoidl mis urret, ut o regultio of the outut voltge. Aordigly, euse of the system-relted dvtge of ostt suly voltge of lod side overter, PF retifier system is ofte referred over tive filterig desite the lrger imlemettio effort, i.e., the oversio of the etire outut ower. Prllel to the develomet of sigle-hse PF retifier iruits, umerous oets for three-hse PF retifier systems hve ee roosed d lyzed over the lst two dedes. However, the toologil reltioshis etwee the iruits d omrehesive lssifitio hve reeived reltively little ttetio. Furthermore, the si futio of the iruits ws tyilly treted y se vetor lultio, logous to threehse drive systems, whih is ot immeditely omrehesile o the sis of kowledge of d ower suly tehology or sigle-hse PF retifier iruits. The gol of the reset work is, hee, to develo the oets of three-hse PF retifiers, strtig from kow sigle-hse PF retifier systems, d to exli s lerly s ossile their si futio d otrol, without referee to lysis tehiques eig seifi to three-hse overter oets. Detils of the ulsewidth modultio (PWM) d detiled mthemtil lysis re omitted, i.e., oly the oertig rge of the systems is lrified with regrd to outut voltge d mis urret hse gle. Furthermore, the dimesioig of the ower semiodutors, the mi ssive omoets, d the EMI filter is riefly disussed. To kee mtters short, the osidertios remi limited to uidiretiol, oisolted systems d, here, to those iruits tht ome ito questio with regrd to imlemettio effort for idustril litios or hve lredy foud suh litios. Numerous theoretilly iterestig iruit roosls of high omlexity d/or high-omoet lodig re, hee, ot osidered. I rtiulr, o iruits re disussed tht fudmetlly demd low-frequey ssive omoets, e.g., dimesioed for sixfold mis frequey. Pssive six- or twelveulse retifier systems [5], hyrid retifier iruits with ssive third hrmoi urret ijetio etworks [6], [7], diret sigle-stge (mtrix-overter-sed) retifier systems [8], or soft-swithig toologies [9], [10] re thus lso ot treted. I the followig, i Setio II, omrehesive lssifitio of uidiretiol three-hse retifier systems is reseted tht for omleteess lso iludes urely ssive systems. For PF retifier iruits, divisio is mde etwee iruits tht re fully tive d hyrid, i.e., rtilly mis-ommutted, d rtilly self-ommutted systems. With regrd to the si struture, hse-modulr d diret three-hse systems re distiguished d susequetly treted i more detil i Setios III d IV with referee to seleted exmles. Art from systems with oost-tye hrteristi, uk-tye PF retifier systems re lso disussed, whih were ot osidered i [11], ut will e of seil iterest i future i oetio with the hrgig of eletri vehile tteries or the suly of d distriutio grids. The orderig d omlemettio of the kowledge se of three-hse uk-tye PF retifier systems leds to ew hyrid iruit oet (SWISS retifier) tht is hrterized y low omlexity of the ower iruit d otrol, d thus of rtiulr iterest for idustril litios. I rt II of this er [65], omrtive evlutio of four seleted oost-tye d uk-tye PF systems re reseted, whih is iteded to rovide id for the hoie of suitle iruit oets i idustril develomet rojets. For this urose, hrteristi mesures (erforme idies) re idetified tht ele holisti d demostrtive retifier system omriso. The omriso is erformed for ltest geertio isulted gte iolr trsistor (IGBT) devies d omred with more dved imlemettio usig stte-of-the-rt Si JFET ower trsistors. I the sese of suort for the dimesioig of the iruits, the urret stresses of the mi iruit omoets re riefly summrized i the form of simle lytil exressio, d the differetil mode d ommo mode EMI filterig of the systems disussed. II. ASSIFIATION OF UNIDIRETIONA THREE-PHASE RETIFIER SYSTEMS I Fig. 3, lssifitio of uidiretiol three-hse retifier iruits is show tht for omleteess lso iludes urely ssive systems whih: 1) oti o tur-off ower semiodutors, i.e.; 2) work urely mis-ommutted; 3) emloy low frequey, i.e., ssive omoets for outut voltge smoothig d mis urret shig d, where lile, mis or utotrsformers for the hse-shift of severl overter stges workig i rllel or series (multiulse retifier iruits).

5 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 179 Uidiretiol Three-Phse Retifier Systems Pssive Systems Hyrid Systems Ative PF Systems Sigle Diode Bridge Retifier Systems Multi-Pulse Retifier Systems Side Idutor A Side Idutors Pssive 3 rd Hrmoi Ijetio (Prtil) Trsf. Isol. or Autotrsf.-Bsed A or Side Iterhse Trsformer Pssive Pulse Multilitio Eletroi Rete Bsed Retifier Systems omitio of Diode Retifier d / overter Systems 3 rd Hrmoi Ijetio Systems Diret Three-Phse Systems Phse-Modulr Systems Sigle Diode Bridge & Side Eletro. Id. Sigle Diode Bridge & A Side Eletro. Id. or. Multi-Pulse Retifier System Emloyig Eletro. Iterhse Trsf. Boost-Tye Buk-Tye Pssive/Hyr. or Ative 3 rd Hrm. Ijet. Network Boost- or Buk-Tye or Uotrolled Outut Diode Bridge or Multiulse System with 3 rd Hrmoi Ij. (Pulse Multil.) Imressed Iut urret (Boost-Tye) Y-Retifier or Δ-Retifier Y-Arrgemet with overter Artifiil Str-Poit oetio 3/2-Phse Sott-Trsf.-Bsed Imressed Iut Voltge (Buk-Tye) Sigle Diode Bridge Sigle Diode Bridge & - Outut Stge & - Outut Stge Hlf-otrolled Diode Hlf-otrolled Diode Bridge Bridge Multi-Pulse Retifier System (Trsf. or Autotrsf.-Bsed) with / Outut Stge Eml. A Side or Side Id. M Sigle-Swith Retifier Two-Swith Retifier M Two-evel Retifier Y- or Δ-Swith Retifier DVM Sigle-Swith overter Three-evel overter (VIENNA Retifier) Six-Swith overter VM Three-Swith Retifier Six-Swith Retifier Fig. 3. lssifitio of (uidiretiol) three-hse retifier toologies ito ssive, hyrid, d tive systems with oost- or uk-tye hrteristi. For eh retifier sugrou, referees to ulitios re give i [4], i whih the orresodig iruit oet ws reseted first or detiled desritio is rovided. The oxes of the overter grous, disussed i this er, re highlighted y shdig. For detils of retifier toologies ot disussed i this er, see [4]. Furthermore, sie here oly diode d ot thyristor iruits re osidered, there is o ossiility of outut voltge regultio. A roximtely siusoidl mis urret d/or rtil elimitio of low-frequey hrmois i the iut urret is, thus, oly otile with multiulse systems, i.e., for 12-, 18-, or 36-ulse retifier iruits. I idustry, multiulse retifiers, euse of their low omlexity d gret roustess, remilyusedthighower(>100 kw) s mis iterfes, where the suly is tyilly diret from the medium voltge mis whose low ier imede llows higher iut urret hrmois to e eted. The oulig d/or rtil itegrtio of ssive retifier d of tive iruit rt imlemeted with ower semiodutors tht e tively swithed OFF leds to hyrid retifier iruits. These systems fudmetlly llow regultio of the outut voltge d siusoidl otrol of the mis urret; however, limittio to voltge regultio is ossile (e.g., i the se of diode ridge with dowstrem d d overter) or to siusoidl urret shig (tive-filter-tye third hrmoi urret ijetio, f., Setio IV or [12] [17]). Furthermore, lowfrequey filter omoets of ssive retifier systems my e reled/emulted y high-frequey PWM overters of reltively low rted ower (eletroi idutor [18], [19]), e.g., i the sese of irese of the ower desity. With -side rrgemet of these eletroi retes, vi hge i the idute or ite vlue i oertio, limited ossiility of voltge regultio exists (mgeti eergy reovery swith oet [20], [21]). Third hrmoi ijetio oets form mjor grou of hyrid retifier iruits. Here, urret is ijeted y ssive or tive ijetio etwork lwys ito tht hse whih would ot rry urret i the se of ovetiol diode ridge retifitio. The urret wveforms of the two other hses re shed i suh wy tht s result, siusoidl urret flows i ll hses. The retifier futio of these systems is imlemeted y diode ridge o the iut side. The tive etwork for urret shig, ijetio, d voltge regultio, rrged o the d side, my thus e osidered essetilly s d d overter workig o time-vryig (six-ulse) d iut voltge. The iruits re, hee, reltively simle, i.e., my e lyzed without seifi kowledge of three-hse overter systems d exhiit reltively low omlexity, lso regrdig otrol. The essetil hrteristis of hyrid retifier iruits my, thus, e summrized s follows: 1) mis-ommutted (diode iruits) d foredommutted, iruit setios imlemeted with ower semiodutors tht e tively swithed OFF; 2) low frequey d/or swithig frequey ssive omoets; 3) outut voltge regultio d/or siusoidl mis urret shig y tur-off ower semiodutors. I this study, oly those hyrid retifier iruits re osidered whih exhiit regulted outut voltge d siusoidl mis urret, d exlusively swithig frequey ssive omoets.

6 180 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 Itegrtio of tur-off ower semiodutors ito the ridgelegs of ssive system, filly, leds to tive PF retifier systems. Essetil fetures of these systems re: 1) fored ommuttio (oly for systems with imressed outut urret rtly turl ommuttios our, deedig o the ositio of the swithig istt i the mis eriod); 2) exlusively swithig frequey ssive omoets; 3) regulted outut voltge. As desried i more detil i Setio IV, these systems exhiit, i geerl, ridge toologies d, here, ridge-legs of sme struture, i.e., hse symmetry, d similr ofigurtio of the ower semiodutors i the ositive (oeted to the ositive outut voltge us) d egtive ridge hlves, i.e., ridge symmetry. Art from these diret three-hse versios (f., Fig. 3), however, imlemettio is lso ossile vi omitio of sigle-hse PF retifier systems i str(y)- or delt(δ)- oetio [f., Fig. 5() d ()]. These hse-modulr versios, however, led to three idividul d outut voltges, i.e., sigle outut voltge oly e formed vi isolted d d overters tht re oeted to the retifier oututs. A dvtge of the hse-modulr versio is the ossiility of relizig three-hse system strtig from existig lredy develoed sigle-hse systems. However, it must e tke ito out tht with the str-oetio oulig of the hse system results. For the delt-oetio, the high-iut voltge of the modules hs to e osidered, whih is defied y the mis lie-to-lie voltge d ot y the hse voltge. Art from the toologil distitio, lssifitio of the systems must lso e rried out with regrd to the ville outut voltge rge, i.e., fudmetlly ito iruits with oostor uk-tye hrteristi. As show i Fig. 4, the lower or uer outut voltge limits of the systems re defied y the mis lie-to-lie voltge. The voltge rge, ot overed y the two si overter forms, is usully imlemeted i idustry y mes of dowstrem d d overter with oost- or uk-tye hrteristi. Altertively, three-hse extesio of uk oost [22], uk- or SEPI-overters [23] ould e used. Beuse of the high omlexity of the resultig iruit, however, this roh is oly of theoretil iterest d is, hee, ot desried i more detil. With regrd to hse-modulr retifiers, it must e oited out tht uk-tye overter systems ele urret shig oly i rt of the mis eriod [24]. Hee, for siusoidl mis urret, oost futio must e rovided whih results i lower limit of the outut voltges of the modules. Note tht systems with glvi isoltio of the outut voltge re ot treted i this er. I my ses, isoltio is hieved y d d outut stge t high frequey, or is required diretly t the suly of the systems for voltge dttio, e.g., for oetio to the medium voltge level. Altertively, trsformer my e itegrted diretly ito the retifier struture. Suh high-frequey isolted three-hse d mtrix overter oets [10], [25], [26], however, re hrterized y reltively high omlexity of the ower iruit d modultio d, hee, re of limited imorte for idustril litios. U 650 V 565 V 490 V 3-Phse Boost-Tye PF Retifier V 400 V 480 V 3-Phse Buk-Tye PF Retifier U N,ll,rms Fig. 4. Outut voltge rge of diret three-hse PF retifier systems with oost- or uk-tye hrteristi ideedet of the rms lie-to-lie mis voltge U N,ll,rms (osidered mis voltge rge: U N,ll,rms = 200 V V); Û N,ll deomites the ek vlue of the lie-to-lie voltge. I dditio, the lower outut voltge limit of sigle-hse oost-tye PF retifier system (U > 1/ 3 ÛN,ll), oeted etwee mis hse d the mis eutrl, is show. III. PHASE-MODUAR RETIFIERS Strtig from the si iruits of symmetril three-hse lods, three-hse PF retifier systems e imlemeted y str- or delt-oetio of sigle-hse PF retifiers. The hse-modulr systems, thus, formed will e termed i the followig Y- or Δ-retifiers ordig to the iruit struture. The hse modules, here, my exhiit ovetiol toology or ould e imlemeted s ridgeless, i.e., dul-oost overters, or -swith overters (f., Fig. 10). They my oti EMI filter or dvtgeously, three-hse EMI filter ould e istlled ommo to ll hse systems. A. Y-Retifier Fig. 6 shows the iruit toology of Y-retifier with ridgeless toology of the hse modules d equivlet iruit of the -side system rt. If the EMI filter is three-hse (ot show i Fig. 6) d the str-oit N is ot oeted to rtifiil str-oit, whih ould e formed, e.g., y filter itors, swithig frequey voltge u N N ours etwee N d the mis str-oit N. Aordig to di dt = u N (uān + u N N) di dt = u N (u N + u N N) di dt = u N (u N + u N N) (2) the imressio of the urrets is vi the differees of the mis hse voltges d the voltges u īn (i =,, ) formed t the iut of the retifier stges, so tht the str-oit voltge

7 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 181 u N N with osidertio of results i d dt (i + i + i )=0 (3) u N N = 1 3 (u ān + u N + u N ). (4) Therefore, with free str-oit N, rt of the retifier iut voltge u īn dvtgeously does ot form urret rile, so tht the vlues of the oost idute my e redued omred to fixed str-oit for the sme rile mlitude. This dvtge is gied t the exese of M voltge u N N of the modules, whih requires rorite M filter. As lerly show y Fig. 6() d with regrd to the fudmetl of the iut voltge required for the imressio of the iut urret, the sme oditios re reset for the hse modules s for sigle-hse PF retifiers sulied from mis hse. Therefore, desite the high-ek vlue of the lie-to-lie voltge of the Euroe low-voltge grid (ÛN,ll = 565 V d/or U N,ll,rms = 400 V), the outut voltge of the hse modules e seleted, e.g., t U,i = 400 V d/or the ower trsistors my e imlemeted with 600-V suerjutio ower MOSFETs. With regrd to the fudmetl iut urret, the system, thus, ehves s symmetril ohmi lod with resistes R =1/G i str-oetio. Aordigly, for symmetril mis, there ours i hse with lower voltge lower urret mlitude, or redued suly of ower to the resetive outut. This must e osidered for settig the referee vlue of dowstrem d d overter. Beuse of the hse-modulr struture, three outut voltges re to e regulted. Therefore, the voltge otrol is slit ito two rts. O the oe hd, the ower drw from the mis, i.e., G is defied from the verge otrol error of the three outut voltges u,i. O the other hd, lig of the outut voltges is imlemeted, wherey i eh se oly the hse with the highest ositive d the highest egtive voltge vlue is tke ito out [27], [30], [31]. As show i Fig. 7, oly for these hses, e.g., d, higher istteous outut ower flow is reset d, hee, the ossiility of hgig the outut voltge vlue. Deedet o the differee etwee U, d U,, offset of the referee hse urret vlues i 0 is formed whih, however, ot e set y the hse urret otrollers euse the free str-oit N, i + i + i =0is ulterle. The hse urrets, thus, kee their siusoidl she d the symmetry to the time xis. However, s ould e show y more detiled lysis, for i 0 > 0, the swithig stte (100) is mily used isted of (011) for the formtio of the voltges u required for urret imressio. Similrly, for īn i 0 < 0 iresigly (011) is emloyed isted of (100). Both swithig sttes re redudt with reset to the voltge formtio d result i equl voltges uā, ū, u ā. However, for (100), rimrily the outut itor is hrged, d for (011) the itor d thus equliztio of U, d U, is eled. For (100), ower lso flows to outut u,, ut euse of the low istteous vlue of i i ϕ N = ω N t =(0, 60 ) d/or the ssoited low outut urret, the outut voltge u, is ot sigifitly hged [31]. I oetio with the lig of the outut voltges, it should e oited out tht symmetril mis urret system lso e surrisigly mitied for uequl distriutio of the iut ower to the three oututs, i.e., is lso ossile for symmetrilly loded oututs. To summrize, the totl ower drw from the three-hse mis is set y G d the distriutio of the ower to the hses is determied y i 0. Shiftig the ower etwee lwys oly two hses hs the dvtge tht the fulfillmet of i + i + i =0does ot eed to e seilly oserved sie the third hse lwys rry resultig urret. This roedure thus exhiits, omred to ltertive oets [29], greter stility rge d sigifitly lower rmeter sesitivity or greter roustess. It should e emhsized tht the lig roedures desried my e emloyed oly i the se of ommo EMI filter for ll hses d/or for free str-oit N, whih llows vritio of u N N with swithig frequey. Here, the lig of the outut itor voltges d ot vishig (low frequey) voltge differee of N from the mis str-oit N is of imorte. For emloyig idividul EMI filters er module, o the other hd, oly low-frequey otetil hges i N our d the lig of the hse uits e with referee to the stroit voltge [33]. Altertively, d/or i dditio to lig, N lso e oeted to rtifiil str-oit tht is formed y trsformer iruit of low zero-sequee imede d e loded with zero-sequee urret omoet ourrig i the se of symmetry [34], [35]. The disdvtge of this oet, silly kow from the str-oit formtio i eletril etworks, however, lies i the requiremet of dditiol idutive omoet of reltively lrge volume d weight. I Fig. 8(), the demostrtor of highly omt versio of sigle-hse ridgeless PF retifier system [f., Fig. 10()] is show; Fig. 8() shows highly effiiet versio of the sme retifier toology. Strtig from these systems, Y-retifiers with ower desities of u to 5 kw/dm 3 or effiieies of η>99% my e imlemeted. B. Δ-Retifier For delt-oetio of the PF retifier modules [f., Fig. 5()], the susystems re deouled, i otrst to the str-oetio (Y-retifier). The otrol, therefore, e rried out, idividully for eh susystem, i the sme wy s for sigle-hse PF retifiers. Blig of the modules with reset to ower osumtio is of dvtge i the sese of symmetril lodig of the mis, ut is ot solutely eessry. However, the lie-to-lie voltge of the mis ers t the iut to the modules. Hee, reltively high-outut voltge U,i > 2 U N,ll,rms (ty. U,i = 700 V V for the Euroe low-voltge mis, tkig ito out voltge toleres) or high-lokig ility of the ower semiodutors hs to e rovided. Altertively, the

8 182 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 () () E MI Iut Filter EMI Iut Filte r i i A A A A A A u, u, u, u, u, u, Fig. 5. Blok digrm of hse-modulr PF retifier systems [27] [29]. () Str(Y)-oetio / Y-retifier d () delt(δ)-oetio / Δ-retifier with outut side isolted d d overters. Isted of ommo EMI iut filter for ll hses s used for () d (), i terms of full modulrity, lso serte EMI filters ould e imlemeted for eh retifier module. u o u o i () u N N () u N' u, N' u, u, u N' N' Fig. 6. () Bsi struture of the Y-retifier. () Equivlet iruit of the system rt without the EMI iut filter. semiodutor-lokig voltge stress ould e hlved y mes of three-level toology. Also, uk overter ould e led i frot of eh oost overter stge, i.e., i eh hse, uk oost overter with ommo idutor ould e imlemeted. This would llow the outut voltge level of the idividul modules to e hose similr s for the Y-retifier with 400 V [36]. The, oly the trsistors of the uk stge hve to e desiged for lie-to-lie voltges. However, dditiol ower trsistor the lies i the urret th, whih leds to higher odutio losses. At the iut of the retifier stges of the Δ-retifier modules, for two-level imlemettio of the oost outut stges, voltges i () 0 60 u, ωt u, u ī j = s ij sig (i ij ) (0, +U,i, U,i ) (5) (s ij desigtes the swithig stte of the ower trsistors S ij ; i, j = {,, }) re formed tht, rt from the swithig stte s = s = s =0, oti swithig frequey zero sequee voltge omoet u 0 u, u, u, u, uā = u ā + u 0 u = u + u 0 u = u + u 0. (6) As e immeditely see vi delt str trsformtio for the formtio of the hse urrets i i, oly the voltges u ā, () (100) (011) Fig. 7. () Time ehvior of the istteous fudmetl ower of the hses of Y-retifier. () Redudt swithig sttes oerig the resultig vritio of the hse urrets for i > 0, i < 0, i < 0 [vlid withi ϕ N = ( 30, +30 )], whih e used for lig the d outut voltges u,, u,, u, of the hse modules.

9 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 183 with u ā + u + u =0 (8) re effetive. The zero-sequee voltge omoet u 0 = 1 3 (u ā + u + u ) (9) Fig. 8. Hrdwre demostrtor of () ultr-effiiet Y-retifier hse module (omil effiiey: η om > 99%, dimesios: 275 mm 130 mm 85 mm, ower desity: ρ>1.1kw/dm 3 =18W/i 3 )d()ofultromt Y-retifier hse module (dimesios: 175 mm 80 mm 42 mm, ower desity: ρ>5kw/dm 3 =82W/i 3 ). The omil outut ower of oth systems is 3.3 kw [32]. () i N () u N u u u χ i 0 u,,,,,, u, u, Fig. 9. () Bsi struture of the Δ-retifier, with thyristor ridges t the iut of the modules to rovide the omil outut ower i the se of hse loss; three-level oost stges re emloyed to redue the voltge stress of the ower semiodutors. () Simlified -side equivlet iruit with the zero-sequee omoet Δi 0 of the iut urret riles of the modules. u, u, d/or the equivlet str-oit hse voltges u ān = 1 3 (u ā u ) u N = 1 ( u u 3 ā) u N = 1 ( u u ) 3 u, (7) thus drives oly swithig-frequey urret withi the deltiruit. This mes tht for three-hse EMI filter, the modultio is est desiged through suitle syhroiztio of the rrier sigls of the modules suh tht u 0 is mximized or mximum frtio Δi 0 of the swithig-frequey iut urret rile of the modules is held withi the delt iruit [29], [37]. There the results miimum rile of the hse urrets i i, d the EMI filter effort is miimized. However, this dvtge should e weighed gist full modulrity/ideedee of the susystems (lso regrdig swithig d modultio), tht is otile oly with the ofigurtio of idividul EMI filter er module. A essetil dvtge of the Δ-retifier is the vilility of the full-rted ower eve for filure of oe mis hse. For this urose, the modules must e oeted s i Fig. 9() vi three-hse thyristor ridges to the mis, d the thyristor ridges, o iterrutio of mis hse, re swithed over to the two remiig hses (f., [29], [36]). However, this oet is lile oly for suitly high-lodig ity of the remiig mis hses.. Disussio Phse-modulr systems llow the kowledge o sigle-hse PF retifier systems to e exloited reltively diretly d/or llow for the develomet of three-hse PF retifier system with low effort. However, this dvtge e relized oly with fully modulr struture, i.e., with the rrgemet of idividul EMI filter er module, so tht the modultio methods for the redutio of rile i the hse urrets desried erlier ot e used. However, i y se, lig of the modules is required to ssure symmetril lodig of the mis. Here, the dditiol effort for mesuremet d sigl roessig required for the Y-retifier should e oted. Bsilly, due to the modulr struture, three idividul d outut voltges re formed tht oly with the id of dowstrem isolted d d overters e emloyed for the suly of sigle lod. Furthermore, eh module requires filterig of the ower flow, whih ulstes with twie the mis frequey, i.e., eletrolyti itors of suitly high ite must e rovided o the outut side. O the other hd, the ssure of mis-holdu to mster the filure of mis voltge hlf-yle ywy requires reltively high-outut ite. Furthermore, y divisio of the overll system ito three susystems, omt ostrutio is suorted d the oolig of the ower omoets is simlified. The essetil dvtge of the Y-retifier is the lower voltge stress of the ower semiodutors or the reltively low level of the outut d voltges. However, diret oulig of the hse

10 184 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 modules is reset, whih eseilly for msterig of hse filure requires lose oorditio of the modules d, filly, otrol iruit for the overll system. Hee, the dvtge of modulrity ot e used for the otrol. Idustrilly, the system will, thus, roly remi of mior imorte. I otrst, the modules of the Δ-retifier work i deouled mer, d vi reltively simle exsio of the iruit toology, the full-rted ower is ville o hse filure. The disdvtge of the reltively high-outut voltge d/or required lokig voltge ility of the ower semiodutors i the modules ought to e llevited i future y the vilility of 1200-V Si ower JFETs or Si ower MOSFETs. The lso dditiol uk overter stge ould e imlemeted for eh module, whih eles to miti the outut voltge level give y sigle-hse PF systems d therewith the use of lredy develoed d d overter iruits. O the whole, the, exellet otetil for idustril litio of this system e disered. N () N i i u u IV. DIRET THREE-PHASE PWM RETIFIER TOPOOGIES I the followig, the toologies of imortt diret threehse oost- d uk-tye retifier systems will e derived d riefly desried with regrd to their si futio d otrol. Boost systems will e develoed y three-hse extesio of kow sigle-hse oost-tye PF iruits (f., Fig. 10 d/or Fig. 26 i [32]); the iruit strutures of the uk-tye systems follow y extesio of ssive three-hse diode retifiers with tur-off ower semiodutors. I geerl, the defiitio of three-hse overter toologies, should e uder osidertio of high level of symmetry of the resultig iruit struture. Beuse of the idetil ture of the hses of the sulyig mis (ure voltges of sme she d mlitude), it is ovious to rovide the sme struture for the iruit rhes oeted to the hse termils (hse symmetry). O the other hd, the symmetry of the ositive d egtive hlf-yles of the iut hse urrets to e imressed y the retifier system turlly leds to idetil rrgemet of ower semiodutors i the ositive d the egtive hlf of the hse-legs. I oetio with the d voltge to e formed, orresodig toologilly to ositive d egtive outut termil, there, thus, results three-hse ridge toology with symmetril ositive d egtive ridge hlves (ridge symmetry). For d d overter, oeted to the retifier outut, this symmetry does ot eessrily eed to e mitied. Here, deisio ould e mde, e.g., y lysis d omriso of the M EMI emissios d the odutio losses of symmetril or symmetril toology. It should e oted tht retifier systems whih violte oe or oth symmetry requiremets, e.g., with the im of reduig the imlemettio effort, lso ele the imressio of mis urrets d the formtio of regulted outut d voltge. However, siusoidl she of the hse urrets is ossily ot fesile (f., Setio IV-A2 for systems showig hse symmetry ut o ridge symmetry), d/or the outut voltge or the modultio rge of the iruits is limited omred to symmetri strutures. Furthermore, i geerl, more () N () i Fig. 10. Sigle-hse oost-tye PF retifier systems; the three-hse extesios of the iruits leds to diret three-hse hyrid or tive PF retifier systems with oost-tye hrteristi. () ovetiol PF retifier, () ridgeless (dul-oost) PF retifier, d () PF retifier with -swith. omlex modultio results (f., e.g., [38] s exmle of system with ridge symmetry ut o hse symmetry). I dditio, with missig hse or ridge symmetry, differig lodigs of the idividul ower semiodutors our. Asymmetril iruits re, hee, treted withi the soe of this work oly s itermedite ste i the derivtio of symmetril iruits. I the followig, for ll iruits, i.e., lso for systems emloyig ower semiodutors with high-lokig voltge stress (defied y the mis lie-to-lie voltge), ower MOSFETs re show s swithig elemets. This should oit out the geerlly existig requiremet of high-swithig frequey or high-ower desity. A imlemettio of the ower semiodutors would e ossile with Si suer-jutio MOS- FETs with lokig voltge of 900 V [39] or i future with Si JFETs (i sode ofigurtio, [40] [42]) or Si MOSFETs [43]). Altertively, 1200-V IGBTs, ossily with Si freewheelig diodes ould lso e emloyed, however, with osiderly lower swithig frequey, due to the reltively high swith-off losses. u

11 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 185 A. Boost-Tye Systems A three-hse extesio of the ovetiol sigle-hse oost-tye PF retifier [f., Fig. 10()], i.e., the dditio of third ridge-leg to the iut retifier ridge, results i hyrid retifier struture show i Fig. 11(). The system eles otrol of the outut voltge, ut the iut urret exhiits the hrteristi lok she of ssive-diode retifitio with THD i 30% [f., Fig. 11()]. If the oost idute is moved to the side d distriuted over the hses [f., Fig. 11()] d the mode of oertio is hged to M t ostt duty yle of the ower trsistors, the swithig frequey ek vlues of the disotiuous hse urrets follow siusoidl eveloe. However, s show y more detiled lysis, low-frequey hrmois of the hse urrets otiue to our [44]. A modultio of the trsistor swith-o time with sixfold mis frequey [45], [46] d/or oertio i oudry odutio mode lso ot omletely elimite the low-frequey urret distortio, sie the smllest hse urret i eh se lwys rehes zero rior to the other two hse urrets d, thus, exhiits zero urret itervl t swithig frequey [44]. Aordigly, reltively highurret qulity is oly ttile for high-voltge trsfer rtios d/or reltively short demgetiztio time of the idutors omred to the trsistor swith-o time, i.e., for outut voltges U > 1 kv whe oertig i the Euroe low-voltge mis. Beuse of this limittio, d the high ek urret lodig of the ower semiodutors d the lrge EMI filter effort, this iruit oet hs ot ee suessful i idustry. Fudmetlly, it should lso e oted, here, tht for threehse overter systems, euse of the reltively high ower, oertio i M is lerly referle. Aordigly, the hseshifted oertio of severl M overter stges, whih would e ossile for the system show i Fig. 11(), [47], [48], d is frequetly used for sigle-hse systems (for ower levels u to ty. 1 kw) is of mior imorte. 1) Hyrid Third Hrmoi urret Ijetio PF Retifier: A imrovemet i the iut urret qulity of the iruit i Fig. 11() is oly ossile y extesio of the otrollility, i.e., y dditio of further ower trsistor (f., Fig. 12). The urrets i the ositive d egtive d uses, i + d i, the e otrolled ideedetly d roortiol to the two hse voltges ivolved i eh se i the formtio of the outut voltge of the diode ridge. If the differee of i + d i is the fed k vi urret ijetio etwork (three four-qudrt swithes, of whih i eh se oly oe is swithed ON) ito the mis hse whih would ot rry urret for simle diode retifitio, siusoidl urret she e ssured for ll mis hses s show elow [49]. Beuse of the symmetries of the sulyig mis voltge system, the mthemtil roof of the siusoidl urret shig e limited to 60 -wide itervl of the mis eriod with, e.g., u N >u N >u N, for whih the ijetio swith S Y (i geerl, the ijetio swith of the hse with the smllest solute voltge vlue) is otiuously swithed ON. By suitle modultio of S +, urret roortiol to the mis hse voltge u N the e imressed i + or i the () () i u u 400 u N i () t (ms) (V) Voltge (V) Voltge i u N (d) t (ms) u i i u u Fig. 11. Three-hse extesio of the sigle-hse system show i Fig. 10(). () System struture d () orresodig mis voltge d mis urret if the d d oost overter stge oertes i otiuous odutio mode (M). () System struture if the oost idutor is shifted to the side d divided over the hses. (d) orresodig mis voltge d urret (ī refers to the lol verge vlue of the hse urret i ) for oertio of the system i disotiuous odutio mode (M). odutig diode D + (A) urret (A) urret i + = i (10) wherey for the lol verge, i.e., the fudmetl frequey omoet ī = G u N (11)

12 186 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 i + D + D + i S Y i Y Y S + S _ u i S + i Y S _ Y u F () i_ i + D_ Fig. 13. Bsi struture of the MINNESOTA retifier with ssive third hrmoi urret ijetio trsformer etwork. D _ N () u N i i Y () i i i u N i 0 60 i Y i_ Y i S+ i S i=i Fig. 12. () Bsi struture of the hyrid third hrmoi urret ijetio retifier [49]. () ol verge equivlet iruit of the tive system rt for u N >u N >u N. () Wveforms of the hse voltge u N, the orresodig hse urret i, d the ijeted urret ī Y. It would e dvtgeous to dd seod freewheelig diode D i the egtive us to miimize the swithig frequey M voltge vritio of the outut. However, this would result i iresed odutio losses. hs to ly. orresodigly, y suitle modultio of S, urret ωt ωt i = i (12) roortiol to u N e imressed i or D with ī = G u N. (13) The fudmetl frequey odute G, determiig the retifier iut d/or ower, is therey defied y the outut voltge otroller. The swithig of S + d S must ot e rried out i oordited mer sie freewheelig of i + d/or i is lwys ossile vi the freewheelig diodes D + d D or the diodes tirllel to S + d S d the ijetio swith S Y. For the ijetio urret i Y followed y Kirhhoffs urret lw i + i i Y =0or i + i i Y =0, d o osidertio of i = i Y (ijetio swith S Y is swithed ON) i = (i + i ) d ī = (ī + ī ). (14) With (11), (12) d u 0 + u 0 + u 0 =0(symmetril siusoidl mis hse voltges) there the results ī = G (u N + u N )=G u N. (15) Aordigly, for ll hses, urret she roortiol to the orresodig mis hse voltge is hieved. (Equtio (14) ould lso e stted diretly with referee to the urret sum i + i + i =0fored to zero euse of the free mis stroit N, ut ws derived here strtig from the d side i order to illustrte the futio of the urret ijetio.) As would e ler from lysis of further 60 setios of the mis eriod, the ijetio urret i Y exhiits threefold mis frequey. Thus, d i the sese of the lssifitio hose here, the retifier system should e lled hyrid third hrmoi urret ijetio PF retifier. The feedk d/or ijetio of urret ours i Fig. 12 lwys ito oly oe hse, whih is seleted y roer gtig of the four-qudrt ijetio swithes. Altertively, the urret ijetio ould lso e rried out y mes of urely ssive ijetio etwork, e.g., resoe etwork or trsformer iruit with low zero-sequee imede (f., MINNESOTA retifier, [50]) show i Fig. 13. However, it the ot e hose i whih hse urret is ijeted, ut the feedk urret oly e divided u ito equl rts tht re the ijeted ito the hses. As show i [4], siusoidl hse urret wveform roortiol to the mis voltge lso e ttied therewith. However, the ssive ijetio etwork shows reltively lrge volume d weight. Furthermore, i omriso to the iruit i Fig. 12(), threefold mlitude of the ijetio urret is required, so tht the semiodutors of the overter stges tht imress the urrets i + d i must e dimesioed for sigifitly higher urret lodig. Hee, osiderig the high-ower desity ofte demded i idustry, tive urret ijetio is lerly referle. With regrd to the oertig rge of the system, it must e stted tht the outut voltge must e seleted sigifitly higher th the ek vlue of the lie-to-lie mis voltge, i.e., s U > 6 U N,ll,rms (s give i [51, Setio II-D,. 595]). As show erlier, ohmi fudmetl mis ehvior e ttied, ut o hse dislemet of the mis urret reltive to the mis voltge is ossile. However, it hs to e emhsized tht the system llows otiutio of oertio with siusoidl urret she (t redued ower) o filure of

13 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 187 mis hse. All ijetio swithes the hve to e loked d simulteous gtig of S + d S rovided, so tht the sme oditios exist s for sigle-hse PF retifier system oertig o mis lie-to-lie voltge. 2) Hyrid Third Hrmoi urret Ijetio Ative-Filter Retifier: Strtig from Fig. 12() d followig iruit oet kow from ssive ijetio etworks [14], [52], the two idutors + d ould e lumed together ito sigle idutor Y lyig i the ijetio th. The resultig iruit struture is show i Fig. 14, [16], [17], [53]. The outut diodes D + d D ow e omitted, sie simulteous swithig o of the trsistors S + or S would led to short-iruitig of the mis, i otrst to Fig. 12, d is thus ot llowed. Aordigly, the systems show reltively low imlemettio effort, however, t the exese of missig outut voltge otrol. As e immeditely see from the see of diodes D + d D, the outut voltge is ow determied diretly y the diode ridge d, hee, exhiits six-ulse she. However, s will e show elow, ssumig ostt ower lod, the ossiility of imressig siusoidl mis hse urrets remis. Thus, the system does ot rovide the full futiolity of outut voltge-regulted PF retifier, ut the futio of ssive retifier with itegrted tive filter d hee should e lled hyrid third hrmoi urret ijetio tive-filter retifier. If lod with ostt ower osumtio is sulied, there results lod urret vryig i tihse to the six-ulse retifier outut voltge. As show elow, this leds to siusoidl she of ll mis hse urrets fter overlyig with the ijetio urret. osider 60 itervl of the mis eriod with u N > u N >u N s i Setio IV-A1. For the urret to e ijeted ito hse ī Y = ī = G u N (16) lies. The mis frequey voltge dro ross the idutor Y i first roximtio e egleted for the formtio of ī Y ūy =0. (17) Aordigly, we hve for the voltge to e formed t the outut of the ridge-leg ū YN =ū N. (18) If i y se oe of the trsistors S + or S is swithed ON, α + + α =1lies for the reltive swith-o times or α = 1 α + d hee, for the voltge formtio of the ridge-leg ū Y = α + u N +(1 α + ) u N = α + u + u N. (19) Fig. 14. () Hyrid third hrmoi urret ijetio tive filter retifier ordig to [4], [17]. () ol verge equivlet iruit of the tive rt of the system for u N >u N >u N. () Wveform of the hse voltge u N,the hse urret ī, the ijetio urret ī Y, d the lod urret i = P o /u t ostt outut ower P o. orresodigly, there follows the duty yle α + with (19) s d thus for the urret i S + α + = u u (20) ī S+ = α + i Y = α + i = α + G u N = G u u N. u (21) osiderig the fudmetl iut urrets tht hve to e geerted t the iut ī = G u N ī = G u N ī = G u N (22) the low-frequey omoet of the urret osumtio of the ostt ower lod e exressed vi i = P o u = īu + ī u u = G u Nu + u N u (23) u ( ) = G u u N + u N. (24) u For the resultt low-frequey urret omoet drw from hse, there, the, follows with (21) ī = i ī S+ = G u N (25)

14 188 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 diretly the desired (siusoidl) wveform roortiol to the mis voltge. Furthermore, there lies with (16), (25) i + i + i =0 (26) d u N + u N + u N =0for hse ī = G u N (27) so tht the siusoidl she of ll hse urrets hs ee roved. It must e emhsized tht the iruit i Fig. 14() llows siusoidl regultio of the mis urrets oly i se overter outut stge, e.g., i the form of d d overter or PWM iverter stge, is reset tht ssures ostt ower osumtio. The imlemettio effort of this oet should, therefore, e evluted oly with regrd to the overll system. Furthermore, it should e oted tht the wveform of i required for the formtio of siusoidl mis urret oly results if o smoothig itor (of higher ite) is oeted etwee ostt ower lod d retifier stge. od vritios re, thus, ssed o diretly to the mis. 3) Δ-Swith Retifier: If the iruit i Fig. 10() is exteded with third ridge-leg d delt-oetio of four-qudrt swithes is dded with reset to the oertig riile d the three-hse symmetry, there follows the toology i Fig. 15() of the Δ-swith retifier [54] [56]. The four-qudrt swithes ele to ifluee the odutio stte of the diode retifier d, thus, to otrol the -side voltge formtio vi PWM. The Δ-swith retifier is tive PF retifier iruit sie the ommuttio of the diode ridge ours, i otrst to the iruit i Fig. 12, t swithig frequey. Similr to sigle-hse PF retifier iruits, the voltge formed t the iut of retifier ridge-leg, e.g., ūām (M desigtes virtul midoit of the outut voltge), deeds o the swithig stte of the (etire) overter d o the diretio of the hse urret i. This does ot rereset limittio sie urret i i hse with the mis voltge u N hs to e imressed. Negletig the voltge dro ross the iut idutor u N ūān hs to e esured. Therewith, iā = G u N d ūān lwys hve the sme olrity. Exet for simulteous swith o of ll four-qudrt swithes (sā = s = s ā =1), oe hse termil, e.g., ā, is lwys oeted with the ositive or egtive outut voltge us or. Aordigly, the iruit shows two-level hrteristi with regrd to the voltge formtio. As is immeditely ler osiderig the diode retifitio o the iut side, the outut voltge hs to e seleted ordig to U > 2 U N,ll,rms. (28) I the se of filure of mis hse, the two four-qudrt swithes ssoited with the hse tht filed hve to e ermetly disled. The, gi sigle-hse PF retifier iruit with -side swith is reset, whih oertes, however, from lie-to-lie voltge, ut still llows regultio of the outut voltge d siusoidl imressio of the mis urrets. It is iterestig to uderstd tht the oertig rge of the Δ-swith retifier is ot restrited to ohmi fudmetl mis ehvior (s ould e exeted due to the diode retifier) ut llows the formtio of urret hse dislemets i the () u ij u in i () i () u u N -30 u 0 u u 30 S u N S S u N Fig. 15. () iruit toology of the Δ-swith retifier [54]. Also, ridge ofigurtio of six trsistors with tirllel diodes d short-iruited outut termils ould e used isted of delt-oetio of four-qudrt swithes. () Equivlet iruit of the system for i > 0, i < 0, i < 0, i.e., for ϕ N =( 30, +30 ). () Wveforms of the mis hse voltges, lol verge hse urret ī, d setios of the lie-to-lie voltges. gulr itervl i u u ωt Φ=( 30, +30 ). (29) This e lrified y more detiled lysis of the odutio sttes of the system, whih my e restrited to 60 itervl due to the symmetry of the three-hse mis system. The equivlet iruit of the tive rt of the Δ-swith retifier is show i Fig. 15() for i > 0,i < 0,i < 0. It is ssumed tht oly the four-qudrt swithes oeted to the hse with the lrgest solute voltge vlue is swithed [55]. For the imressio of i d i, Sā d Sā re swithed suh tht ūā d uā omeste the lie-to-lie voltges u > 0 d u > 0. The voltges ūā d ūā e formed for the give olrities of the urrets. However, s result of the hse dislemet etwee the hse qutities d the lie-to-lie qutities of ±30 (omre, e.g., u N d u or u N d u ) u > 0 d u > 0 lies, ot oly for ϕ N =( 30, 30 ) ut lso for ϕ N =( 60, 60 ). Therewith, the le of the voltges u ūā > 0 d u ūā > 0 e lso hieved for hse voltges with dislemet of ±30 gist the hse urret system. The voltge referee vlues formed t the outut of the hse urret otrollers re overted with Y-Δ trsformtio ito

15 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 189 i () u M M M () () Fig. 16. () iruit toology of the origil VIENNA retifier [44]. () (d) Altertive ridge-leg strutures, wheres the ridge-leg vrit () requires oly three trsistors ut shows higher odutio losses due to the series-oeted diodes [57]; () [58] is dvtgeous oerig rehrgig the outut itor t strt-u [57] (fter the rehrge itervl the thyristor is gted, thus, rllel th with rehrgig resistor d series diode is yssed); (d) [59] llows further redutio of the odutio losses omred to the toology i (). the effetively djustle lie-to-lie voltge referee vlues u ā = u ān u N u = u N u N M (d) u ā = u N u ān. (30) The olrity of the hse urrets or hse voltges, i.e., the iformtio of the tul 60 setor of the mis eriod hs, the, to e osidered for the otrol of the idividul ower trsistors, however, o setor deedet swith over of the etire otrol struture is required. This results i higher iut urret qulity s swith over of the otrol, otetilly uses urret distortios t the swithig istts. 4) VIENNA Retifier: If the delt(δ)-oetio of the fourqudrt otrol swithes of the Δ-swith retifier is reled y str-oetio, d the str-oit of the swith rrgemet is oeted to itively formed midoit M of the outut voltge i terms of highest ossile symmetry, tive threelevel PWM retifier system (f., Fig. 16(), [44], [57]), kow s VIENNA retifier, results. Futiolly equivlet ltertive imlemettios of the ridge-leg struture with lower lokig voltge stress of the ower diodes re deited i Fig. 16() (d) [57] [59]. As for the Δ-swith retifier, the -side voltge formtio of the system is gi deedet o the sig of the hse urrets. However, the retifier hse iut, e.g., ā, ow e lso oeted to the midoit M of the outut voltge esides the ositive d the egtive outut voltge us. Thus, three voltge levels re ville for the formtio of ūām, whih justifies the desigtio of the system s three-level overter. A mjor dvtge of the three-level hrteristi is tht for the seletio of the lokig voltge ility of the ower trsistor oly hlf of the ek vlue of the lie-to-lie voltge d ot the totl vlue is relevt. Furthermore, s result of the higher umer of levels of ūām, the differee u N uān remis limited to smll vlues. Thus, smller mis urret fudmetl rile results [f., (2)], d/or the vlue of the iut (oost) idutes e redued. I dditio, s result of the lower swithed voltge, lower oduted EMI oise level is lso geerted. I logy to the Δ-swith retifier U > 2 U N,ll,rms (31) lies for the outut voltge rge of the system d Φ=( 30, +30 ) (32) for the hse dislemet rge of the mis voltge d the mis urret fudmetl i se high-outut voltge U > 2 2 U N,ll,rms d smll oost idute re ssumed. The hse dislemet rge is iresigly redued to ure ohmi mis ehvior (Φ =0) [56], [57] for lower outut voltge vlues, i.e., for 2 U N,ll,rms <U < 2 2 U N,ll,rms.Similr to the Δ-swith retifier i the se of hse loss, the VIENNA retifier lso still e oerted t redued outut ower d t the sme outut voltge d with siusoidl iut urrets i the remiig hses [60] [62]. The outut voltges of the system e loded symmetrilly, s ws show i the lysis i [63]. However, the dmissile degree of symmetry deeds o the mis voltge level. High degrees of symmetry re oly ossile for high-outut voltges. A stte-of-the-rt hrdwre demostrtor of the VIENNA retifier is show i Fig. 17. The swithig frequey of the system is f P = 250 khz. Suh high-swithig frequey, however, is oly useful if extremely low THD i of the iut urrets hs to e hieved t high mis frequeies (e.g., for More Eletri Airrft [56], f N = 360 Hz Hz). 5) Hyrid Hlf-otrolled/Ative Full-otrolled Six- Swith PF A/ Bridge iruit: If isted of the ovetiol sigle-hse PF retifier struture ridgeless (or dul-oost) overter toology i Fig. 10() is exteded to threehses, hlf-otrolled hyrid hse-symmetril retifier iruit show i Fig. 18() results. This iruit toology does ot llow to imress siusoidl iut urret withi the etire mis eriod euse of the lk of ridge-symmetry. If, e.g., 60 itervl with u N > 0 d u N,u N < 0, i.e., gulr itervl ϕ N =( 30, 30 ) of the mis eriod is osidered [f., Fig. 19()] d hse urrets with idetil sigs s the orresodig mis hse voltge re ssumed, oly the swithig-off of Sā would use ommuttio of i to Dā. I the hses d, the tirllel diodes D d D would remi odutive, ideedet of the swithig stte of the trsistors S d S. Therefore, siusoidl urret imressio is ossile oly for those 60 itervls i whih two mis hse voltges hve

16 190 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 i D D D u () S S S i u Fig. 17. () Hrdwredemostrtorof10-kWVIENNA retifier (dimesios: 195 mm 120 mm 43 mm; ower desity: ρ =10kW/dm 3 = 164 W/i 3 ). () Mesured hse urret i (THD i =1.6%) d orresodig mis hse voltge u N. Oertig rmeters: mis rms lie-to-lie voltge U N,ll,rms = 400 V, mis frequey f N = 800 Hz, outut voltge U = 800 V, d swithig frequey f P = 250 khz. Sles: 200 V/div, 10 A/div, d 0.5 ms/div. ositive sig, thus whe, e.g., u,u > 0, u < 0,oriā,i > 0, i < 0 lies [f., ϕ N =(30, 90 ), Fig. 19()]. By swithig ON S ā or S, ā or the e oeted to the egtive outut voltge us d i or i iresed. At the swith-off of S Nā or S N, the orresodig freewheelig diode Dā or D eomes odutig. Thus, ositive otetil is lied to ā or, d the orresodig hse urrets re redued. Therewith, either irese or derese of two hse urrets d osequetly siusoidl urret wveform is hievle. The third hse urret the lso shows siusoidl she s result of i + i + i =0. I summry, siusoidl urret she e hieved oly i setios of the mis eriod. The futio of the iruit is, hee, essetilly limited to outut voltge regultio, wherey y usig the simle otrol roedure desried i [64], t lest lok-shed urret wveform, omrle to ssive retifiers, my e relized. It should e oted tht to simlify mtters, ll trsistors ould lso e swithed syhroously with duty yle ostt over the mis eriod d the system oerted i M. The iut urret she would the e idetil to tht i Fig. 11(d). As dvtge, lower odutio losses would our ut t the ost of higher imlemettio effort. Voltge regultio d siusoidl urret imressio requires extesio of the iruit i Fig. 18() to ridge symmetry, i.e., () Fig. 18. () Hlf-otrolled (hyrid) oost-tye three-hse d ridge iruit. () Full-otrolled tive three-hse d ridge iruit (idiretiol six-swith tive PF retifier). the dditio of three further trsistors tirllel to the freewheelig diodes of the ositive ridge hlf. There the results the six-swith overter struture show i Fig. 18(), whih is emloyed, e.g., for sulyig of the voltge d-lik of vrile seed drives. Sie for swithed-o trsistor the urret i y se flows over this trsistor or its tirllel diode, the system llows, i eh hse, voltge formtio ideedet of the urret. At the iut of eh retifier ridge-leg, ositive or egtive voltge my e geerted referred to the virtul outut voltge midoit. Thus, the ridge-legs exhiit two-level hrteristi d, hee, llow the imressio of siusoidl hse urrets of y hse dislemet reltive to the mis voltge. I rtiulr, the urret my lso e led i tihse to the mis voltge, i.e., ower my e fed k ito the mis. This iverter oertig mode is, e.g., emloyed i vrile seed mhie drives to feed rkig eergy k ito the mis, d reresets the mi eergy flow diretio for sulyig mhie from voltge d-lik. With regrd to the level of the outut voltge U > 2U N,ll,rms (33) is required, the sme s for the systems i Figs. 15() d 16. Furthermore, the system del with mis hse filure,

17 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 191 i () Setor: 1 2 u N () ωt = U u N Fig. 19. () Time ehvior of the hse voltges withi mis eriod. () Ative rt of the system for setor 1 (u N > 0, u N,u N < 0) with the ossiility of otrollig oly oe hse urret. () Ative rt of the system for setor 2 (u N,u N > 0, u N < 0) with the ossiility of otrollig two-hse urrets, i.e., ll hse urrets. thus reresetig mis iterfe tht e used i extremely flexile mer. Hee, the etire iruit struture is lso ommerilly ville s ower module (geerlly deomited s sixk ower module) d is widely used i idustry. It should e emhsized tht the iruit hs reltively simle struture, desite the high futiolity, i.e., i rtiulr, the idiretiolity does ot result i irese i the umer of swithes omred with the uidiretiol strutures derived reviously. This eomes eseilly ler o usig reverse odutig (R)-IGBTs, whih rt from the ower trsistor, lso ilude the tirllel freewheelig diode i oe hi. The sme lies (i future), e.g., for Si JFETs (i sode oetio). The iruit is, thus, of rtiulr iterest, desite the limittio mde here to uidiretiol systems s the wide hse gle rge my lso e exloited i the urely retifier mode, e.g., for retive ower omestio. 6) Disussio: Aordig to Setio IV-A1, the imlemettio of three-hse oost-tye PF retifier is ossile with urret ijetio oet sed o ssive-diode retifitio or, ordig to Setios IV-A2 IV-A4, y otrol of the odutio stte of diode ridge with tur-off ower semiodutors, whih llows diret imressio of siusoidl urrets. The diret urret imressio is referle omred with the imressio of two d urrets (i omitio with urret ijetio ito the third hse) for idustril system sie swithig t the setor orders, otetilly usig distortios, is ot required. I dditio, tive retifier systems re ot limited to urely ohmi fudmetl mis ehvior, therewith, e.g., the itive retive ower of the EMI iut filter e (rtly) omested, or i geerl higher flexiility for the urret otrol is give. Thus, for the omrtive evlutio i [65], oly the Δ- swith retifier, the VIENNA retifier d the (idiretiol) sixswith oost-tye PF retifier re osidered. The Δ-swith retifier ould here e lso omitted with regrd to the system i () u N = U omlexity. Give y its struture, however, the system ot geerte short-iruit of the outut voltge i the se of fulty otrol of the ower trsistors. Therewith, dvtge is give regrdig the oertiol sfety omred with the sixswith overter. The evlutio of the system, furthermore, is resole i terms of omleteess of the lysis. B. Systems With Buk-Tye hrteristi As sigle-hse uk-tye d overters do ot ele to rovide siusoidl urrets over the etire mis eriod [24], the derivtio of uk-tye PF retifier strutures hs to refer diretly to three-hse diode retifier iruits with d-side idutor [f., Fig. 2()]. The diode ridge hs to e exteded with tur-off elemets y osiderig hse- d ridge-symmetry requiremets, suh tht the mis hses to e oeted with the d side e ritrrily seleted. Altertively, lso system sed o the ijetio riile ould e oetulized with referee to Setio IV-A1. 1) Ative Six-Swith Buk-Tye PF Retifier: A ower trsistor hs to e dded i series to eh diode i the iruit show i Fig. 2() to ele full, i.e., voltge-ideedet otrollility of the ower trsfer. The resultt overter struture is show i Fig. 20(), whih is kow from urret d-lik overters used for drive systems [66]. The diode trsistor series omitios rereset, here, uidiretiol, iolr lokig swithes, whih lso e reled y RB- IGBTs i terms of redutio of the odutio losses. However, limittio of the swithig frequeies to reltively low vlues (i the rge of 10 khz) would the e required due to the reltively high swithig losses [67]. If trsistor of the ositive ridge hlf, e.g., trsistor Sā, d trsistor of the egtive ridge hlf, e.g., S, re swithed ON, the outut idutor urret I is drw from hse d fed k ito hse i =+I i =0 i = I (34) [f., Fig. 20()]. I dditio, the lie-to-lie voltge u is swithed to the outut, i.e., is used for the formtio of the outut voltge u = uān u N = uā = u. (35) If solely oth trsistors of ridge-leg re swithed ON, i = i = i =0lies d u =0, i.e., the system is i freewheelig stte. The odutio losses i the freewheelig stte ould e redued y imlemettio of exliit freewheelig diode. By roer modultio, the outut urret i, thus, e distriuted to the three hses i suh mer tht fter low-ss filterig of the ulsewidth modulted disotiuous iut urrets iā, i, i siusoidl mis urrets result (i Fig. 20(), oly the filter itors F of the EMI filter o the mis side re show). Furthermore, the outut voltge, whih is formed y low-ss filterig of u with the outut idutor d the

18 192 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 i i u u F () u N i N () F Fig. 20. () iruit toology of the tive six-swith uk-tye PF retifier. () Equivlet iruit of rt of the system. Note tht if ower trsistors were oly imlemeted i the ositive or egtive ridge hlf, iruit logous to Fig. 18() would result, whih lso would ot llow for siusoidl urret imressio due to the limited otrollility. outut itor, e djusted with the reltive durtio of the freewheelig stte strtig from zero to vlues 3 U < 2 U N,ll,rms. (36) The limited outut voltge rge is exlied y the ft tht two lie-to-lie voltges hve to e used i eh ulse eriod for the formtio of the outut voltge i order to suly eh mis hse with urret. I order to mximize the hievle outut voltge, here, lwys the two lrgest voltges, e.g., uā d uā re seleted [vlid withi 60 itervl of the mis eriod ϕ N =( 30, +30 ), f., Fig. 15()]. Both voltges hve hse dislemet of 60. Therefore, oly voltge vlues uā = uā = 3/2 U N,ll,rms re ville for the ulse eriod t the itersetio of oth voltges. orresodigly, the outut voltge rge is defied y (36). The full otrollility of the system geerlly llows ritrry hse dislemet etwee the mis urret d the mis voltge of Φ=( 180, +180 ). (37) However, with iresig hse dislemet Φ, the lie-tolie voltges swithed to the outut hve lower istteous vlues, d/or 3 U < 2 U N,ll,rms os (Φ) (38) lies. orresodigly, e.g., for Φ=90 follows U =0, s is immeditely ler osiderig the ower le etwee Fig. 21. () Hrdwre demostrtor of 6-kW tive six-swith uktye PF retifier (dimesios: 418 mm 155 mm 31 mm; ower desity: ρ =2.2kW/dm 3 =36W/i 3 ). () Time ehvior of the hse urrets withi mis eriod. Oertig rmeters: rms lie-to-lie voltge U N,ll,rms = 400 V, mis frequey f N =50Hz, d outut voltge U = 400 V, d swithig frequey f P =18kHz. The retifier eles extremely high omil effiiey of η om =98.9% [70] lthough there re lwys four ower semiodutor i the urret th (two diode MOSFET series oetios). Sles: 5 A/div, 2 ms/div. the d the d side. The outut voltge rge (36) is, thus, oly vlid for Φ=0 d/or i order to esure wide outut voltge rge, the hse dislemet Φ hs to e limited to smll vlues [68]. Note tht ordig to (37), for the iruit i Fig. 20(), the reversl of the ower flow diretio demds hge of the outut voltge. A reversl of the ower flow diretio t the sme olrity of the outut is oly ossile y extesio of the iruit struture with tirllel trsistors to the diodes [69]. A hrdwre demostrtor of the retifier system is reseted i Fig. 21 [70]. The effiiey of the system, imlemeted with 900-V suerjutio MOSFETs d Si Shottky diodes (f P =18kHz) equls 98.9% t the omil oertig oit. This lerly shows, tht with rorite semiodutor effort, desite the imlemettio of the swithes s diode trsistor series oetio, very high effiieies re hievle. 2) Ative Three-Swith Buk-Tye PF Retifier: As ltertive to Fig. 20, the seletio of the odutig hses is lso ossile with four-qudrt swithes rrged o the side of the ridge retifier. The four-qudrt swithes the e itegrted ito the ridge-leg struture s show i Fig. 22() (). The resultig three-swith uk-tye PF retifier system is deited i Fig. 22(d).

19 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 193 X i i S + S Y D + i Y Y u F S _ D _ () () () () Z i i S+ X i i=i α + i (1- α + ) i u u N () i i i Y α_i i S Z Y (1- α_ )i i i=i F F F i (d) Fig. 23. ) Bsi struture of the SWISS Retifier. ) ol verge equivlet iruit of the tive rt of the system for u N >u N >u N. Fig. 22. Derivtio of the iruit toology of the tive three-swith uktye PF retifier. A four-qudrt swith is formed y diode ridge d d-side ower trsistor is iserted o the side i (). After mergig series oeted diodes d redrwig, the ridge-leg struture i () results, d/or the three-hse iruit toology i (d). Due to the redutio of the umer of swithes d/or higher umer of diodes, higher odutio losses result. O the other hd, the istlled hi re of the ower trsistors is etter utilized. However, s result of the lower umer of swithes, the otrollility is limited omred with Fig. 20. There is o other ossiility give for reversl of the ower flow diretio, s e immeditely verified with Fig. 22(). Furthermore, oly the urret odutig ridge-legs ut ot diretly the urret odutig diodes re defile. The odutio stte, thus, djusts deedig o the olrity of the voltges t the tivted ridge-legs. A restritio of the oertig rge to Φ=( 30, +30 ) (39) results, s is show y more detiled lysis, whih, however, is of mior imorte i view of the referred ohmi oertio s osequee of (38). A figurtive exltio of (39) is ossile i similr mer s for the oost-tye Δ-swith retifier [f., Fig. 15()] with the ±30 hse dislemet etwee the hse qutities d the lie-to-lie qutities, however, is ot show here for the ske of revity. The outut voltge rge for Φ=0 is still give y 3 U < 2 U N,ll,rms. (40) The otrol sheme of the six-swith uk-tye PF retifier e lso lied to the three-swith system. The swith- ig sigls of the trsistors the hve to e geerted y ORoetio of the swithig sigls of the ower trsistors of the resetive ridge-legs of the six-swith uk-tye PF toology. 3) Hyrid urret Ijetio Buk-Tye (SWISS) PF Retifier: As ltertive to the diret otrol of the urret formtio of three-hse diode ridge, three-hse PF retifier lso e imlemeted, ordig to the oet of third hrmoi urret ijetio desried i Setio IV-A1 for oost-tye systems. The, oly the d d oost overters of the iruit i Fig. 11 hve to e reled y uk overters. The resultt iruit is show i Fig. 23(). To the kowledge of the uthors, this system hs ot yet ee desried i the literture, resumly due to the geerl fous i reserh o systems with oost-tye hrteristi. I the followig, the iruit toology is, thus, desigted s SWISS retifier [4], [71]. otrry to the iruits ordig to Setios IV-B1 IV- B2, the retifier diodes of the system re ot ommutted with swithig frequey. orresodigly, the odutio losses e redued y emloyig devies with low forwrd voltge dro (d higher reverse reovery time). As for the oosttye system, the urret ijetio is erformed gi with fourqudrt swithes ito the hse with the urretly smllest solute voltge vlue. I this otext, it should e metioed tht with ssive ijetio etwork, urret ijetio ito ll three hses is ossile. Suh system ws roosed i [15] d is, s desried i Setio IV-A1, lso kow for oost-tye systems. However, i osidertio of the lrge volume of the ssive ijetio etwork d the higher ijetio urret, this roh is ot disussed further i this er. For the roof of the siusoidl otrollility of the mis urrets, gi 60 itervl of the mis eriod with u N >

20 194 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 u N >u N or ϕ N =(0, 60 ) is osidered. The tive rt of the iruit i this mis setor is deited i Fig. 23(). The retifier system should rereset symmetri three-hse lod of (fudmetl) hse odute G to the mis. Aordigly, the lol verge vlues of the (disotiuous) iut urrets my e writte s īā = G u N ī = G u N ī = G u N (41) (u in = u īn ). The referee outut urret I, to e imressed y the uk overter, is the give uder the ssumtio of symmetril three-hse mis system y I = 3 2 G Û 2 N U (42) (ÛN desigtes the mlitude of the hse voltges, U is the outut voltge). A idel outut urret otroller d/or ī = I = I is ssumed for further osidertios. The urrets i the hses d re imressed y resetive swithig (PWM) of S + d S α + I = īā α I = ī (43) wherey the duty yles result with (41), (42), d (43) s U U α + I = 2 u 3 ÛN 2 N α + I = 2 u 3 ÛN 2 N. (44) osiderig the rtitioig of the urret i the ode Y d i + i + i =0or īā + ī + ī =0, the ijetio urret ī Y =(1 α ) I (1 α + ) I = īā + ī = ī (45) results. Thus, the orret urret is ijeted ito the third hse (here hse ). For the formtio of the outut voltge, ū XZ = α + u N +(1 α + ) u N ( ) α u N +(1 α ) u N (46) is relevt. After simlifitio, the outut voltge my e writte s ū XZ = α + u α u. (47) A multilitio of (47) with I results i ū XZ I = ī u + ī u = = P (48) the istteous ower, whih uder the ssumtio of symmetrilly loded mis shows ostt vlue = P.Aordigly, t ostt urret I, lso ostt voltge ū xz d thus due to ū =0ostt outut voltge ū = U is geerted. As the revious derivtio shows, the oertio of the system is limited to urely ohmi fudmetl mis ehvior Φ=0 (49) [f., (41)]. The outut voltge rge is limited y the miiml vlue of the six-ulse diode ridge outut voltge 3 U < 2 U N,ll,rms (50) d therewith idetil with the outut voltge rge for sixswith tive uk-tye PF retifier systems. The PWM of S + d S e imlemeted i hse or tihse. The swithig frequey rile of i Y is miimized for rrier sigls u D+ d u D tht re i hse. For rrier sigls tht re i oosite hse, miiml outut urret rile ut mximum rile of i Y results, whih eeds to e osidered for the desig of the filter itors F t the iut. A hrdwre demostrtor of the retifier system is show i Fig. 24. The trsistors S + d S re imlemeted with ltest geertio of 1200-V high-seed IGBTs d the freewheelig diodes D + d D with Si Shottky rrier diodes. It should e oted tht hyrid third hrmoi ijetio PF retifier iruit lso e uilt y omitio of tivefilter-tye third hrmoi ijetio retifier d simle d d uk overter stge s show i Fig. 25. The uk stge to e otrolled, e.g., for ostt outut urret or ostt outut voltge the esures, ideedet of the ulstio of the voltge u with sixfold mis frequey, ostt outut ower. The dvtge of this iruit toology is tht oly sigle ower trsistor is lyig i the mi urret th, i.e., i rtiulr, t high outut voltges with reltively short freewheelig itervl, low odutio losses our. I dditio, the egtive outut voltge termil is lwys oeted to the mis vi diode of the lower ridge hlf of the diode retifier. Therefore, o outut M voltge with swithig frequey is geerted. The imlemettio effort of the M EMI filter thus e redued. Oly the rsiti itors of the ower semiodutors led to high-frequey M oise urrets (f., relted osidertio of oost-tye PF retifier systems i [56]). 4) Disussio: The imressio of the mis urret of the osidered uk-tye PF retifier systems is otied with so fr kow urret otrol shemes lwys oly i idiret mer. This mes tht tyilly oly the d-lik urret ut ot the iut urrets is feedk-otrolled to lod-deedet or redefied ostt vlue. I these otrol shemes, lokshed segmets of the otrolled d-lik urret re ijeted y PWM of the retifier iut stge ito the idividul iut lies suh tht fter low-ss filterig with the iut filter itors, siusoidl urrets re drw from the mis. Aordigly, otrry to the oost-tye PF retifiers (f., Setio IV-A5) with feedk-otrolled iut urrets, oets sed o the urret ijetio riile d diret tive uk-tye PF retifier systems tyilly use feed-forwrd otrol for the iut urrets d, thus, e osidered s equivlet regrdig the hievle iut urret qulity.. Systems With Boost-Tye d Buk-Tye hrteristi As show i Fig. 4, the outut voltge rge of oost-tye PF retifiers is ot immeditely djoiig the outut voltge rge of uk-tye systems. Voltges i the rge 3 2 U N,ll,rms <U < 2 U N,ll,rms (51)

21 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 195 ito the outut stge of uk-tye PF system, wherey the outut idutor ould lso e used s oost idutor [72], [73]. Fig. 24. () Hrdwre demostrtor of 7.5-kW SWISS retifier (dimesios: 210 mm 132 mm 92 mm; ower desity: ρ =2.94 kw/dm 3 =48W/i 3 ). () Time ehvior of two hse urrets, the iut hse voltge, d the d outut voltge. Oertig rmeters: rms lie-to-lie iut voltge U N,ll,rms = 400 V, mis frequey f N =50Hz, d outut voltge U = 400 V, d swithig frequey f P =36kHz. The retifier hs omil effiiey of η om =96.5%. Sles: 10 A/div, 250 V/div, 500 V/div, 5 ms/div (mesuremet erformed with iut filter ot with EMI iut filter). i F S Y i Y Y Fig. 25. omitio of tive-filter-tye third hrmoi urret ijetio retifier d d d uk-tye overter stge to tive uk-tye PF retifier system. The system is hrterized y miiml umer of ower semiodutors i the mi urret th, d oly low-frequey vritio of the outut M voltge. The d d uk overter should e dvtgeously imlemeted s iterleved overter., thus, oly e geerted with dowstrem d d oost overter of the uk-tye PF retifier or y omitio of oost-tye PF retifier d d d uk overter. As ltertive to exliit imlemettio of d d overter, d d oost overter stge ould lso e itegrted Y S + S _ u V. ONUSION As show i this first rt of the er, three-hse PF retifier futiolity e imlemeted esides hse-modulr roh with 1) diret otrol of the odutio stte of threehse retifier through itegrted ower trsistors or rllel otrol rhes with tive ower semiodutors, i.e., s tive retifier or 2) y shig the outut urrets of threehse diode retifier o the d side d feedk/ijetio of the urret differee lwys i tht hse whih would ot odut urret for ovetiol ssive diode retifitio, i.e., s hyrid retifier with third hrmoi urret ijetio. Followig these si oets, diret three-hse retifier iruits with oost- or uk-tye hrteristi re relizle. These iruits dvtgeously hve ridge toology (t the iut) with ridge-legs of idetil struture d, thus, feture overll ridge symmetry. For oth iruit tegories, over the lst two dedes, vriety of iruit toologies hve ee roosed. However, i the oiio of the uthors, from the tegory of the oost-tye retifier systems, oly the ovetiol (idiretiol) six-swith overter d the VIENNA retifier d from the systems with uk-tye hrteristi oly gi the six-swith struture d the SWISS retifier, roosed i this er, re of iterest for idustril litio. omred to these four toologies, other iruit oets show (sigifitly) higher omlexity of the ower d/or the otrol iruit, or hve high-omoet stresses t lower omlexity d limited oertig rge with regrd to outut voltge rge d/or urret-to-voltge hse dislemet gle t the iut. This is of rtiulr imorte whe oertig t uled mis systems or i the se of filure of mis hse. The seleted iruit toologies ele very high effiieies s result of the exellet odutio d swithig hrteristis of moder Si, Si, d GN ower semiodutors. Soft-swithig oets re, thus, ot eessry d would lso ot e eted y idustry due to the irese i omlexity resultig from the uxiliry iruit rhes with dditiol losses d due to the tyilly omlex stte sequee withi swithig eriod. I geerl, i idustry, oly iruit toologies re rtile tht re well uderstood ot oly y the ivetors ut lso y suffiietly lrge umer of egieers. I terms of system omlexity, it should e oted tht the restritio to uidiretiol ower flow does ot llow redutio, e.g., hlvig of the umer of tive semiodutors or simler otrol sheme. The reso is tht, ultimtely, uidiretiol strutures lso hve to odut hse urrets of oth diretios d to geerte voltges with oth olrities. Oly for three-level overters, ler dvtge of uidiretiol overters (VIENNA retifier) is give omred with idiretiol overters; for the uidiretiol system, six trsistors (with tirllel diodes) d six diodes re required, wheres the imlemettio of toologilly similr idiretiol

22 196 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 T-tye three-level overter system [74] requires twelve trsistors (with tirllel diodes). The mi three-hse PWM retifier iruit toologies, exet the SWISS retifier, hve ee lredy theoretilly ivestigted d exerimetlly verified i the literture. Therefore, for further demi reserh, mily the followig reltively rrow tois remi: 1) Diret mis (iut) urret otrol of uk-tye PF retifier iruits. (For these systems, tyilly, oly the outut voltge d the outut urret is diretly otrolled d/or the mis urret is ot exliitly iluded i feedk loo; thus, rtiulrly for high mis frequeies (800 Hz), urret distortios our t the itersetios of the lie-to-lie voltges.) 2) Prllel oertio of higher umer (more th two) overter systems. (High outut ower levels re ofte imlemeted y rllel oetio of multile low-ower modules where irultig urrets ould our i etwee the systems.) 3) Stility of distriuted overter systems. (The ostt ower hrteristi of PF retifiers results i egtive differetil iut imede, whih led to istility i omitio with the EMI iut filter or the ier mis imede d/or with other overters [75].) I dditio to these tois, eseilly the multi-ojetive otimiztio of overter systems reresets wide d iterestig field of reserh. Whe develoig idustril systems, esides defied effiiey d ower desity, mily ost trget hs to e met, d erti lifetime hs to e gurteed, i.e., multile erforme idies hve to e simulteously osidered. It is, therefore, essetil to uderstd the mutul deedee of the erforme idies i the ourse of the desig, e.g., the trdeoff etwee ower desity ρ (kw/dm 3 ) d effiiey η (%), whih is show i the seod rt of this er [65] for four seleted PF retifier systems. AKNOWEDGMENT The uthors would like to thk Dr. M. Hrtm for rovidig figures d dt of the VIENNA retifier d the Δ-swith retifier from his Ph.D. thesis [56]. REFERENES [1] P. 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Eletro., vol. 52, o. 2, , Ar [19] K. Mio, M.. Heldwei, d J. W. Kolr, Ultr omt three-hse retifier with eletroi smoothig idutor, i Pro. 20th IEEE Al. Power Eletro. of. Exo., Mr. 6 8, 2005, vol. 1, [20] T. Tkku, G. Homm, T. Isoer, S. Igrshi, Y. Uhid, d R. Shimd, Imroved wid ower oversio system usig mgeti eergy reovery swith (MERS), i Pro. 40th IEEE Id. Al. So. Au. Meet., Ot. 2 6, 2005, vol. 3, [21] J. A. Wiik, F. D. Widjy, T. Isoe, T. Kithr, d R. Shimd, Series oeted ower flow otrol usig mgeti eergy reovery swith (MERS), i Pro. IEEE/IEEJ Power overs. of., Ar. 2 5, 2007, [22] K. D. Ngo, Toology d lysis i PWM iversio, retifitio, d yloversio, Ph.D. disserttio, Eletr. Eg. Det., lifori Ist. Tehol., Psde, [23] J. W. Kolr, H. Sree, U. Drofeik, N. Moh, d F.. Zh, A ovel three-hse three-swith three-level high ower ftor SEPI-tye -tod overter, i Pro. 12th IEEE Al. Power Eletro. of. Exo.,Fe , 1997, vol. 2, [24]. Huer,. Gg, d M. M. Jovovi, Desig-orieted lysis d erforme evlutio of uk PF frot-ed, i Pro. 24th IEEE Al. Power Eletro. of. Exo., Fe , 2009, [25] J. W. Kolr, U. Drofeik, d F.. Zh, VIENNA Retifier II A ovel sigle-stge high-frequey isolted three-hse PWM retifier system, i Pro. 13th IEEE Al. Power Eletro. of. Exo., Fe , 1998, vol. 1, [26] D. S. Greff d I. Bri, A sigle-stge high-frequey isolted threehse /d overter, i Pro. 32d IEEE Id. Eletro. So. of., Nov. 6 10, 2006, [27] J. Miioek, R. Greul, d J. W. Kolr, Evlutio of delt-oetio of three sigle-hse uity ower ftor retifier modules (Δ-retifier) i

23 KOAR AND FRIEDI: ESSENE OF THREE-PHASE PF RETIFIER SYSTEMS PART I 197 omriso to diret three-hse retifier reliztio, i Pro. 23rd It. Teleom. Eergy of., Ot , 2001, [28] R. Greul, S. D. Roud, d J. W. Kolr, Alysis d otrol of threehse, uity ower ftor Y-Retifier, IEEE Trs. Power Eletro., vol. 22, o. 5, , Se [29] R. Greul, Modulre Dreihse Pulsgleihrihtersysteme, Ph.D. disserttio, o , Power Eletro. Sys.., ETH Zurih, Zurih, Switzerld, [30] J. W. Kolr, Vorrihtug zur regelug der hsezwishekreissuge eier stershltug eihsiger ulsgleihrihtersysteme i logie zu dreihse-dreiukt-ulsgleihrihtersysteme, Swiss Ptet H , [31] J. Biel, U. Drofeik, F. Kre, J. Miiok, d J. W. Kolr, Novel three-hse Y-retifier yli 2-out-of-3 d outut voltge lig, i Pro. 29th It. Teleom. Eergy of., Se. 30 Ot. 4, 2007, [32] J. W. Kolr, J. Biel, d J. Miiok, Exlorig the Preto frot of multi-ojetive sigle-hse PF retifier desig otimiztio 99.2% effiiey vs. 7 kw/dm 3 ower desity, i Pro. 6th IEEE It. Power Eletro. Motio otrol of., My , 2009, [33] D. hm, D. Jmes, d. J. Tuk, A high desity 48 V200 A retifier with ower ftor orretio A egieerig overview, i Pro. 15th It. Teleom. Eergy of., Se , 1993, vol. 1, [34] M. Krlsso,. Thore, d T. Wolert, A ovel roh to the desig of three-hse /d ower overters with uity ower ftor, i Pro. 21st It. Teleom. Eergy of., Ju. 6 9, 1999, [35] M. Krlsso,. Thore, d T. Wolert, Prtil osidertios oerig ovel6 kw three-hse /d ower overter with uity ower ftor, i Pro. 22d It. Teleom. Eergy of., Se , 2000, [36] R. Ridley, S. Ker, d B. Fuld, Alysis d desig of wide iut rge ower ftor orretio iruit for three-hse litios, i Pro. 8th IEEE Al. Power Eletro. of. Exo., Mr. 7 11, 1993, [37] J. W. Kolr, U. Drofeik, J. Miiök, d H. Ertl, A ew oet for miimizig high-frequey ommo-mode EMI of three-hse PWM retifier systems keeig high utiliztio of the outut voltge, i Pro. 15th IEEE Al. Power Eletro. of. Exo., Fe. 6 10, 2000, vol. 1, [38] R. Grierg, F. les, d M. Pkkie, omriso study of fullridge d redued swith out three-hse voltge soure iverters, i Pro. 7th It. omt. Power Eletro. of.-worksho, Ju. 1 3, 2011, [39] oolmos V First 900V High Voltge Power MOSFET Usig hrge omestio Priile, Ifieo, Neuierg, Germy, [40] B. Weis, M. Bru, d P. Friedrihs, Tur-off d short iruit ehviour of 4H Si JFETs, i Pro. 36th IEEE Id. Al. So. Au. Meet., Se. 30 Ot. 4, 2001, vol. 1, [41] T. Friedli, S. D. Roud, d J. W. Kolr, A 100 khz Si Srse Mtrix overter, i Pro. 38th IEEE Power Eletro. Se. of., Ju , 2007, [42] D. Aggeler, J. Biel, d J. W. Kolr, otrollle du/dt ehviour of the Si MOSFET/JFET sode A ltertive hrd ommutted swith for teleom litios, i Pro. 25th IEEE Al. Power Eletro. of. Exo., Fe , 2010, [43] B. Hull, M. Ds, F. Hus, R. ll, A. Agrwl, d J. Plmour, 20 A, 1200 V 4H-Si DMOSFETs for eergy oversio systems, i Pro. 1st IEEE Eergy overs. ogr. Exo., Se , 2009, [44] J. W. Kolr, H. Ertl, d F.. Zh, Se vetor-sed lytil lysis of the iut urret distortio of three-hse disotiuous-mode oost retifier system, i Pro. 24th IEEE Power Eletro. Se. of., Ju , 1993, [45] J. Su d H. Grotstolle, Averged modelig d lysis of resot overters, i Pro. 24th IEEE Power Eletro. Se. of., Ju , 1993, [46] Q. Hug d F.. ee, Hrmoi redutio i sigle-swith, threehse oost retifier with high order hrmoi ijeted PWM, i Pro. 27th IEEE Power Eletro. Se. of., Ju , 1996, vol. 2, [47] D. J. Perreult d J. G. Ksski, Desig d evlutio of ellulr retifier system with distriuted otrol, i Pro. 29th IEEE Power Eletro. Se. of., My 17 22, 1998, vol. 1, [48] P. Bros, F. les, J.-. reier, d F.. ee, Iterleved threehse oost retifiers oerted i the disotiuous odutio mode: Alysis, desig osidertios d exerimettio, IEEE Trs. Power Eletro., vol. 16, o. 5, , Se [49] J.. Slmo, omrtive evlutio of iruit toologies for 1-hse d 3-hse oost retifiers oerted with low urret distortio, i Pro. di of. Eletr. omut. Eg., Se , 1994, [50] R. Nik, M. Rstogi, d N. Moh, Third-hrmoi modulted ower eletrois iterfe with 3-hse utility to rovide regulted d outut d to miimize lie-urret hrmois, i Pro. 27th IEEE Id. Al. So. Au. Meet., 1992, [51] J.. Slmo, Oertig three-hse diode retifier with low-iut urret distortio usig series-oeted dul oost overter, IEEE Trs. Power Eletro., vol. 11, o. 4, , Jul [52] S. Kim, P. Ejeti, P. Pkeush, d I. Pitel, A ew roh to imrove ower ftor d redue hrmois i three hse diode retifier tye utility iterfe, i Pro. 28th IEEE Id. Al. So. Au. Meet., Ot. 2 8, 1993, [53] M. Jtsh d. W. G. Verhoeve, Iverters with three-hse outut d without eletrolyte itor for imroved lifetime, effiiey d osts of grid oeted systems, i Pro. 14th Eur. Photovolt. Sol. Eergy of. Exhi., Ju. 30 Jul. 4, 1997, [54] J. W. Kolr, J. Ertl, d F.. Zh, Reliztio osidertio for uidiretiol three-hse PWM retifier systems with low effets o the mis, i Pro. 6th Euro. Power Eletro. Motio otrol of., Ot. 1 3, 1990, vol. 2, [55] M. Hrtm, J. Miiök, d J. W. Kolr, A three-hse delt swith retifier for more eletri irrft litios emloyig ovel PWM urret otrol oet, i Pro. 24th IEEE Al. Power Eletro. of. Exo., Fe , 2009, [56] M. Hrtm, Ultr-omt d ultr-effiiet three-hse PWM retifier systems for more eletri irrft, Ph.D. disserttio, o , Power Eletro. Sys.., ETH Zurih, Zurih, Switzerld, [57] J. W. Kolr d F.. Zh, A ovel three-hse three-swith three-level PWM retifier, i Pro. 28th Power overs. of., Ju , 1994, [58] Y. Zho, Y. i, d T. A. io, Fore ommutted three level oost tye retifier, i Pro. 28th IEEE Id. Al. So. Au. Meet.,Ot. 2 8,1993, [59] M.. Heldwei, S. A. Muss, d I. Bri, Three-hse multilevel PWM retifiers sed o ovetiol idiretiol overters, IEEE Trs. Power Eletro., vol. 25, o. 3, , Mr [60] F. Stögerer, J. Miiok d J. W. Kolr, Imlemettio of ovel otrol oet for relile oertio of VIENNA Retifier uder hevily uled mis voltge oditios, i Pro. 34d IEEE Power Eletro. Se. of., Ju , 2001, vol. 3, [61] J. Miiök, F. Stögerer d J. W. Kolr, A ovel oet for mis voltge roortiol iut urret shig of VIENNA Retifier elimitig otroller multiliers, Prt I Bsi theoretil osidertios d exerimetl verifitio, i Pro. 16th IEEE Al. Power Eletro. of. Exo., Mr. 4 8, 2001, vol. 1, [62] F. Stögerer, J. Miiök d J. W. Kolr, A ovel oet for mis voltge roortiol iut urret shig of VIENNA Retifier elimitig otroller multiliers, Prt II Oertio for hevily uled mis hse voltges d i wide iut voltge rge, i Pro. 16th IEEE Al. Power Eletro. of. Exo., Mr. 4 8, 2001, vol. 1, [63] J. W. Kolr, U. Drofeik, d F.. Zh, urret hdlig ility of the eutrl oit of three-hse/swith/level oost-tye PWM (VIENNA) Retifier, i Pro. 27th IEEE Power Eletro. Se. of., Ju , 1996, vol. 2, [64] D. Kräheühl,. Zwyssig, K. Bitterli, M. Imhof, d J. W. Kolr, Evlutio of ultr-omt retifiers for low ower, high-seed, ermetmget geertors, i Pro. 35th IEEE Id. Eletro. So. of., Nov. 3 5, 2009, [65] T. Friedli, M. Hrtm, d J. W. Kolr, The essee of three-hse PF retifier systems Prt II, IEEE Trs. Power Eletro., i ulitio, [66] K. P. Phillis, urret-soure overter for motor drives, IEEE Trs. Id. Al., vol. IA-8, o. 6, , Nov [67] F. Shfmeister, Idirekte Srse Mtrix Koverter, Ph.D. disserttio, o , Power Eletro. Sys.., ETH Zurih, Zurih, Switzerld, [68] J. W. Kolr, T. Friedli, d M. Hrtm, Three-hse PF retifier d - overter systems Prt II, Tutoril, i Pro. 26th IEEE Al. Power Eletro. of. Exo., Mr. 6 10, [69] T.. Gree, M. H. Th, N. A. Rhim, d B. W. Willims, Threehse ste-dow reversile -d ower overter, IEEE Trs. Power Eletro., vol. 12, o. 2, , Mr

24 198 IEEE TRANSATIONS ON POWER EETRONIS, VO. 28, NO. 1, JANUARY 2013 [70] A. Stur, T. Friedli, J. Miioek, M. Shweizer, d J. W. Kolr, Towrds 99% effiiet three-hse uk-tye PF retifier for 400 V d distriutio systems, i Pro. 26th IEEE Al. Power Eletro. of. Exo., Mr. 6 10, 2011, [71] M. Hrtm, T. Friedli, d J. W. Kolr, Three-hse uity ower ftor mis iterfes of high ower EV ttery hrgig systems, i Pro. Power Eletro. hrgig Eletri Veh. Worksho, Mr , [72] J. W. Kolr, Netzrükwirkugsrmes Dreihse-Stromzwishekreis- Pulsgleihrihtersystem mit weitem Stellereih der Ausggssug, Worldwide Ptet WO 01/ A1, [73] T. Nussumer, K. Mio, d J. W. Kolr, Desig d omrtive evlutio of three-hse uk-oost d oost-uk uity ower ftor PWM retifier systems for sulyig vrile d voltge lik overters, i Pro. 10th Eur. Power Qulity of., My , 2004, [74] M. Shweizer, I. izm, T. Friedli, d J. W. Kolr, omriso of the hi re usge of 2-level d 3-level voltge soure overter toologies, i Pro. 36th IEEE Id. Eletro. So. of., Nov. 7 11, 2010, [75] M. Shweizer d J. W. Kolr, Shiftig iut filter resoes A itelliget overter ehvior for mitiig system stility, i Pro. IEEE/IEEJ It. Power Eletro. of., Ju , 2010, Thoms Friedli (M 09) reeived the M.S. degree i eletril egieerig d iformtio tehology (with distitio) d the Ph.D. degree from the Swiss Federl Istitute of Tehology (ETH Zurih), Zurih, Switzerld, i 2005 d 2010, resetively. From 2006 to 2011, he ws with the Power Eletroi Systems ortory, ETH Zurih, where he erformed reserh o urret soure d mtrix overter toologies usig silio ride ower semiodutors, tive three-hse PF retifiers, d oduted eletromgeti iterferee. Sie 2012, he hs ee with ABB Switzerld td., Turgi, Switzerld, s R&D Egieer for ower eletrois d medium voltge drives for trtio overter systems. His urret reserh iterests ilude the res of high-effiiey ower eletroi systems d their otrol, three-hse ower overters, eletromgeti iterferee, d litios of wide dg ower devies. Dr. Friedli reeived the 1st Prize Per Awrd of the IEEE Idustril Alitios Soiety Idustril Power overters ommittee i 2008 d the IEEE TRANSATIONS ON INDUSTRY APPIATIONS Prize Per Awrd i Joh W. Kolr (F 10) reeived the M.S. d Ph.D. degrees (summ um lude/romotio su usiiis residetis rei ulie) from the Vie Uiversity of Tehology Vie, Austri, i 1997 d 1998, resetively. Sie 1984, he hs ee workig s ideedet itertiol osultt i lose ollortio with the Vie Uiversity of Tehology, i the fields of ower eletrois, idustril eletrois, d high-erforme drives. He hs roosed umerous ovel overter toologies d modultio/otrol oets, e.g., the VIENNA retifier, the SWISS retifier, d the three-hse srse mtrix overter. He hs ulished more th 450 sietifi ers i itertiol jourls d oferee roeedigs d hs filed more th 85 tets. He joied s Professor d Hed of the Power Eletroi Systems ortory, Swiss Federl Istitute of Tehology, Zurih, Switzerld, o Fe. 1, He iitited d/or is the fouder/ofouder of four sioff omies trgetig ultr-high seed drives, multidomi/level simultio, ultr-omt/effiiet overter systems d ulsed ower/eletroi eergy roessig. His urret reserh fouses o d d overter toologies with low effets o the mis, e.g., for dt eters, more-eletri-irrft d distriuted reewle eergy systems, d o solid-stte trsformers for smrt mirogrid systems. Further reserh res ilude the reliztio of ultromt d ultr-effiiet overter modules emloyig ltest ower semiodutor tehology (Si d GN), miroower eletrois d/or ower sulies o hi, multidomi/sle modelig/simultio d multi-ojetive otimiztio, hysil model-sed lifetime reditio, ulsed ower, d ultrhigh-seed d erigless motors. Dr. Kolr reeived the Best Trstios Per Awrd of the IEEE Idustril Eletrois Soiety (IES) i 2005, the Best Per Awrd of the Itertiol oferee o Power Eletrois i 2007, the 1st Prize Per Awrd of the IEEE Idustry Alitios Soiety (IAS) Idustril Power overters ommittee i 2008, the IEEE IEON Best Per Awrd of the IES Power Eletrois Tehil ommittee i 2009, the IEEE Power Eletrois Soiety (PES) Trstio Prize Per Awrd i 2009, the Best Per Awrd of the IEEE/ASME TRANS- ATIONS ON MEHATRONIS i 2010, the IEEE PES Trstios Prize Per Awrd i 2010, the Best Per 1st Prize Awrd t the EE Asi 2011, d the 1st Ple IEEE IAS Prize Per Awrd i He eme IEEE Distiguished eturer of the IEEE PES i Furthermore, he reeived the ETH Zurih Golde Owl Awrd i 2011 for exellet tehig. He is memer of the Istitutio of Eletril Egieers of J (IEEJ) d of Itertiol Steerig ommittees d Tehil Progrm ommittees of umerous itertiol oferees i the field (e.g., Diretor of the Power Qulity Brh of the Itertiol oferee o Power oversio d Itelliget Motio). He is the foudig hirm of the IEEE PES Austri d Switzerld hter d hirm of the Edutio hter of the Euroe Power Eletrois d Drives Assoitio. From 1997 to 2000, he ws Assoite Editor of the IEEE TRANSATIONS ON INDUSTRIA EETRONIS d sie 2001 he hs ee Assoite Editor of the IEEE TRANSATIONS ON POWER EETRONIS. Sie 2002, he hs lso ee Assoite Editor of the Jourl of Power Eletrois of the Kore Istitute of Power Eletrois d memer of the Editoril Advisory Bord of the IEEJ Trstios o Eletril d Eletroi Egieerig.