3D Silicon Capacitors

Transcription

1 3D Silicon Capacitors Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. To contact us, to: Date of release:01/03/2016 Rev 2.0 Document ID: Product Line Leaflet HSSC - High Stability and reliability Capacitors LPSC - Low Profile Capacitors 80 µm thick HTSC - High Temperature Capacitors up to 200 C XTSC - Xtreme Temperature Capacitors up to 250 C WBSC / WTSC / WXSC - Wire Bondable vertical Capacitors WLSC - Wire bondable vertical Low profile Capacitors EMSC - Wire bondable and EMbedded low profile Capacitors ETSC / EXSC - High / Extreme Temperature wire bondable Capacitors up to 250 C UBSC / ULSC - Broadband and Ultra Broadband surface mounted Capacitors up to 67 GHz+ UBEC / ULEC - Broadband and Ultra Broadband Embedded Capacitors up to 67 GHz+ UWSC - Ultra large-band Wire bondable vertical Capacitors > 26 GHz ATSC - High Temperature Automotive Capacitors up to 200 C

2 IPDiA 3D Silicon Capacitors the Best Choice for all Demanding Applications IPDiA high-density silicon capacitors have been developed with a semiconductor MOS process and are using the third dimension to substantially increase the capacitor surface and thus its capacitance without increasing the capacitor footprint. IPDiA technology is based on a monolithic structure embedded in a monocristalline substrate (mono MIM and multi MIM). Higher reliability in a smaller package This advanced 3D topology gives a developed area equivalent to 80 ceramic layers in an amazing 80 μm thickness of active capacitance area. Thanks to a very linear and low dispersive dielectric, miniaturization, capacitance value and electrical performances are optimized. A reliability 10 times better than MLCCs Coming from the same DNA as the semiconductor MOS process, IPDiA capacitors have a default mode fully modelized with proven consistent data and offer therefore predictable and exceptional reliable performances. Our SiCap technology features high reliability - up to 10 times better than alternative capacitor technologies mainly obtained thanks to the highly pure oxide generated during the high temperature curing. Furthermore, all electrical tests are completed at the end of the production steps which avoids any early failure. Capacitance variation vs temperature (for SiCap and MLCC technologies) Capacitance variation vs DC biasing voltage (for SiCap and MLCC technologies)

3 IPDiA product ranges reflect of our the benefits disruptive technology IPDiA silicon capacitors are the best choice for all demanding applications in medical, automotive, communication, industrial and high reliability market such as downhole, defense/aerospace. IPDiA portfolio includes silicon capacitors from pf to tens of µf and is composed of: Low Profile Capacitor < 80 µm thin for decoupling inside critical space application such as IC decoupling, MOS sensor, broadband modules, RFID; High Temperature Capacitor up to 250 C with very high stability; Ultra Broadband Capacitor up to 67 GHz; High Medical and Automotive Grade Capacitor. IPDiA operates design centers, sales and marketing offices and a manufacturing facility of m 2 ( ft 2 ) certified ISO 9001 / 14001, ISO TS16949 for the automotive market as well as ISO for medical devices. Please refer to our website to get the latest versions of our commercial and technical leaflets. Please download the assembly instructions on and read them carefully before use.

4 High Stability and reliability Silicon Capacitors (JEDEC/EIA compatible) (HSSC) IPDiA High Stability Silicon Capacitors avoid the need to oversize the capacitor value for sensitive capacitive circuitry and offer a higher DC voltage stability. The PICS technology developed by IPDiA provides outstanding capacitor stability over the full operating voltage & temperature ranges. The very high and stable insulation resistance of silicon capacitors can improve battery lifetime up to 30% in mobile applications. Ultra High stability (temperature, voltage, ageing) (high insulation resistance) Very low ESR and ESL Negligible capacitance change with temperature variation Low profile Lead-free nickel/solder coating compatible with automatic soldering technologies (reflow and manual). Other terminations available on request. Tape and reel, tray, waffle pack or wafer delivery. Capacitance range 10 pf to 3.3 µf (*) Capacitance tolerances ±15% (*) Operating temperature range -55 C to 150 C Storage temperature range -70 C to 165 C <±0.5 %, from -55 C to +150 C Breakdown Voltage (BV) 11VDC or 30VDC Capacitance variation versus RV DC 0.1%/V (from 0 to RVDC) Equivalent Series Inductor (ESL) Max 100 ph (*) Equivalent Series Resistor (ESR) Max 200 mω (*) 100 GΩ 3V, from 55 C to C Negligible, < 0.001% / 1000h FIT<0.017 parts / billions hours Capacitor height Max 400 µm Low Profile Silicon Capacitors 80 µm thick (LPSC) IPDiA 3D Silicon Capacitors target antenna matching, RF filtering and decoupling of active dies, in applications with height and volume constraints. The LPSC offer low profile (100 µm thin, 80 µm on request), with very high stability upon applied voltage, up to 150 C, with very low leakage current and high level performances dedicated to industries such as Smart Card, RFID tags, medical and others where integration plays a key role. The LPSC product family is split into two series: the LPSC range from 10 pf to 3.3 µf, suitable for embedded technologies, modules, system in package, when designers are looking for utmost decoupling behaviours; and the LPSC ESD Enhanced range from 10 pf up to 330 pf that works efficiently and durably in RFID environments. Thanks to the full modeling of the elementary cell, the ESD capabilities have been optimized up to 8 kv (see below). Furthermore, our RFID Silicon capacitor range has been fine tuned in order to reach SRF higher than 1.2 GHz, hence allowing unique fine tuning of the antenna, from MHz up to UHF (800/900 MHz) applications. Ultra low profile (100 µm, 80 µm on request) High Q Voltage stability High ESD capabilities (ESD enhanced series): >1 kv for 47 pf >1.5 kv for 100 pf >8 kv for 330 pf down to 100 pa Low ESL and low ESR SRF > 1.2GHz Lead-free NiAu finishing compatible with wirebonding or leadframe soldering. Aluminum pads on request. Wafers, on foil, sawn and grinded. Raw wafers. Tape and reel. Capacitance range 10 pf to 3.3µF (*) Capacitance tolerances ±15 % (*) Operating temperature range -55 C to 150 C (*) Storage temperature range -70 C to 165 C <±0.5 %, from -55 C to +150 C Breakdown Voltage 11VDC or 30VDC Capacitance variation versus RV DC 0.1%/V (from 0 to RVDC) Equivalent Series Inductor (ESL) Typ 200 ph (*) Equivalent Series Resistor (ESR) Max 100 mω (*) Min 100 3V, 25 C Negligible, < 0.001% / 10000h FIT<0.017 parts / billions hours Capacitor height Max 100 µm (*)

5 High Temperature Silicon Capacitors (up to 200 C - JEDEC/EIA compatible) (HTSC) Thanks to the unique IPDiA silicon capacitor technology, most of the problems encountered in demanding applications can now be solved. High Temperature Silicon Capacitors are dedicated to applications where reliability up to 200 C is the main parameter. The capacitor integration capability (up to 250 nf/mm ² ) offers capacitance value similar to what is obtained with X7R dielectric, but with better electrical performance than C0G/NP0 dielectrics at 200 C. HTSC provides the highest capacitor stability ever reached over the full temperature range -55 C/+200 C with a temperature coefficient lower than ±1%. Extended operating temperature range (up to 200 C) with low capacitance variation High stability Very low ESR and ESL Lead-free nickel/solder coating compatible with automatic soldering technologies (reflow and manual). Other terminations available upon request. Tape and reel, tray, waffle pack or wafer delivery. Capacitance range 10 pf to 3.3 µf (*) Capacitance tolerance ±15 % (*) Operating temperature range -55 C to 200 C (*) Storage temperature range -70 C to 215 C <±1 %, from -55 C to +200 C Breakdown Voltage (BV) 11VDC or 30VDC Capacitance variation versus 0.1% /V (from 0 to RVDC) RVDC Equivalent Series Inductor (ESL) Max 100 ph (*) Equivalent Series Resistor (ESR) Max 400 m (*) 50 G RVDC, 25 C 20 G RVDC, 200 C Ageing Negligible, <0.001% / 1000h FIT <0.017 parts / billion hours Capacitor height Max 400 µm (*) (*) Other values upon request Xtreme Temperature Silicon Capacitors (up to 250 C - JEDEC/EIA compatible) (XTSC) The Xtreme Temperature Silicon Capacitors are ideal for applications subject to extreme conditions up to 250 C. For instance, XTSC range offers a 1 µf in 1206 with a TC<±1.5% over the full -55 C/+250 C temperature range. Ageing, stability of insulation resistance and capacitor value have been optimized to obtain the best product for Hi-Rel applications. Extended operating temperature range (up to 250 C) with low capacitance variation High stability Very low ESR and ESL Lead-free nickel/solder coating compatible with automatic soldering technologies (reflow and manual). Other terminations available upon request. Tape and reel, tray, waffle pack or wafer delivery. (*) Other values upon request Capacitance range 10 pf to 3.3 µf (*) Capacitance tolerance ±15 % (*) Operating temperature range -55 C to 250 C (*) Storage temperature range -70 C to 265 C <±1,5 %, from -55 C to +250 C Breakdown Voltage (BV) 11VDC or 30VDC Capacitance variation versus 0.1% /V (from 0 to RVDC) RVDC Equivalent Series Inductor (ESL) Max 100 ph (*) Equivalent Series Resistor (ESR) Max 400 m (*) 50 G RVDC, 25 C 10 G RVDC, 250 C Ageing Negligible, <0.001% / 1000h FIT <0.017 parts / billion hours Capacitor height Max 400 µm (*)

6 Wire Bondable vertical Silicon Capacitors (WBSC, WTSC, WXSC) The Wire Bonding vertical Silicon Capacitors target RF High Power applications for wireless communication, radar and data broadcasting systems. They are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. They offer ultra high stability of capacitance value with temperature, voltage, and aging. The Wire Bonding vertical range is available up to +150ºC (WBSC), up to +200ºC (WTSC) and up to +250ºC (WXSC). Low profile 250 µm High stability (temperature and voltage) Negligible capacitance loss through ageing Capacitance range 10 pf to 22 nf (*) Capacitance tolerance ±15 % (*) Operating temperature range -55 C to 250 C (*) Storage temperature range -70 C to 265 C <±1.5 %, from -55 C to +250 C <±1.0 %, from -55 C to +200 C <±0.5 %, from -55 C to +150 C Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/ Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu). Compatible with standard wire bonding assembly (ball and wedge) Tape and reel, waffle pack, film frame carrier or raw wafer delivery Equivalent Series Inductor (ESL) Equivalent Series Resistor (ESR) (*) Other values upon request Typ 50 ph Typ 50 m 50 G RVDC, 25 C 10 G RVDC, 250 C Capacitor height Max 250 µm (*) BV 450V BV 150V BV 50V Wire Bondable vertical Low profile Silicon Capacitors (WLSC) The WLSC low profile capacitors target RF High Power applications with height and volume constraints and can address wireless communication, radar and data broadcasting systems. The WLSC is suitable for DC decoupling, matching network, and harmonic / noise filtering functions. The unique technology of integrated passive devices in silicon developed by IPDiA, can solve most of the problems encountered in demanding applications. These Si capacitors in ultra deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 1.3 nf/mm² to 250 nf/mm² (with a breakdown voltage of respectively 450 V to 11 V). Ultra low profile 100 µm High stability (temperature and voltage) Negligible capacitance loss through ageing Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/ Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu). Compatible with standard wire bonding assembly (ball and wedge). Tape and reel, waffle pack, film frame carrier or raw wafer delivery. Capacitance range 10 pf to 22 nf (*) Capacitance tolerance ±15 % (*) Operating temperature range -55 C to 150 C (*) Storage temperature range -70 C to 165 C 0 ±24 ppm/ C, from -55 C to +150 C Equivalent Series Inductor (ESL) Equivalent Series Resistor (ESR) Typ 50 ph Typ 50 m 50 G RVDC, 25 C 10 G RVDC, 250 C Capacitor height Max 100 µm (*) (*) Other values upon request BV 450V BV 150V BV 50V

7 Wire bondable and EMbedded low profile Silicon Capacitors (EMSC) IPDiA EMbedded Silicon Capacitors are designed to be compliant with the embedding process for printed circuit board and laminates. The EMSC can also be used with wire bond technologies. Thanks to the high robustness and performance of these silicon passive components, embedded processes are now reliable. The EMSC are available with thicknesses down to 80 μm and are the most appropriate solution for Chip On Board, Chip On Foil, Chip On Glass, Chip On Ceramic, flip chip and embedded applications. Ultra Low profile 100 µm High stability (temperature, voltage and ageing) Low ESL and ESR Pad finishing in Aluminum. Other finishing available such as copper, nickel or gold. Applicable for almost all embedded applications. Tape and reel, tray, waffle pack or wafer delivery Capacitance range 390 pf to 4.7 µf Capacitance tolerances ±15 % (**) Operating temperature range -55 C to 150 C Storage temperature range -70 C to 165 C <±0.5 %, from -55 C to +150 C Breakdown Voltage (BV) 30V, 11V Capacitance variation versus RVDC 0.1%/V (from 0 to RVDC) Equivalent Series Inductor (ESL) Max 100 ph Equivalent Series Resistor (ESR) Max 100 mω Min 100 3V, 25 C Negligible, < 0.001% / 10000h FIT<0.017 parts / billions hours Capacitor height Max 100 µm (*) (*) 80 µm thickness on request (**) Other values on request High / Extreme Temperature wire bondable Silicon Capacitors up to 250 C (ETSC, EXSC) IPDiA ETSC and EXSC Series are designed to be compliant with high temperature wire bond technologies with Aluminum pads for Aluminum wedge bonding and gold pads on request for gold wire bonding. ETSC and EXSC Silicon Capacitors feature low profile (250 µm), low leakage current and high operating temperature (ETSC up to 200 C/ EXSC up to 250 C) with high stability with temperature, voltage and negligible capacitance loss through aging. Applications include downhole and defense industries, decoupling, filtering, charge pump, replacement of X8R and C0G dielectrics, and high reliability applications, mainly for Multi-Chip Module assemblies. Ultra High operating temperature - ETSC: up to 200 C - EXSC: up to 250 C Low profile (250 µm) High stability (Temperature, Voltage and ageing) Pad finishing in Aluminum. Other finishing available such as copper, nickel or gold. Tape and reel, tray, waffle pack or wafer delivery Capacitance range 390 pf to 4.7 µf Capacitance tolerances ±15 % (*) Operating temperature range -55 C to 250 C Storage temperature range -70 C to 265 C <±1,5 %, from -55 C to +250 C Breakdown Voltage (BV) 30V, 11V Capacitance variation versus RV DC 0.1%/V (from 0 to RVDC) Equivalent Series Inductor (ESL) Max 100 ph Equivalent Series Resistor (ESR) Max 100 mω 50 GΩ 3V, 25 C 10 GΩ 3V, 250 C Negligible, < 0.001% / 10000h FIT<0.017 parts / billions hours Capacitor height Max 250 µm

8 Broadband and Ultra Broadband surface mounted Silicon Capacitors up to 67 GHz+ (UBSC, ULSC) UBSC/ULSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data systems. These ultra broadband capacitors are optimized for DC blocking, feedback, coupling and bypass applications in ultra broadband applications. They offer low insertion loss, low reflection and unique phase stability. The UBSC/ULSC capacitors provide very high capacitance stability over temperature (±0.5%) and voltage. These capacitors are available from 16 khz to 67 GHz+ for the UBSC and to 20 GHz for the ULSC. They are fully compatible with high speed automated pick-and-place manufacturing operations and are available with ENIG termination. Ultra broadband performance up to 67 GHz+ Resonance free Phase stability High stability of capacitance value over temperature, voltage and aging Low ESL Lead-free nickel/solder coating compatible with automatic soldering technologies: reflow and manual. Other top finishings available on request (ex: lead-free bumping - SAC305 type6) Tape and reel, waffle pack, film frame carrier or raw wafer delivery. Capacitance range 10 nf to 100 nf (*) Capacitance tolerance ± 15 % (*) Operating temperature range -55 C to 150 C Storage temperature - 70 C to 165 C <±0.5 %, from -55 C to +150 C Breakdown voltage (BV) 11 V, 30 V (*) Capacitance variation 0.1 %/V (from 0 V to RVDC) versus RVDC Equivalent Series Inductance Max 100 ph (ESL) SRF Equivalent Series Resistance Max 400 m (ESR) (**) 100 G RVDC, +25 C Negligible, < %/1000 h FIT<0.017 parts/billion hours Capacitor height Max 400 µm or 100 µm (**) e.g. 100 nf/0402/ Broadband and Ultra Broadband Embedded Silicon Capacitors up to 67 GHz+ (UBEC, ULEC) UBEC/ULEC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data systems or products. The UBEC/ULEC are optimized for DC decoupling and bypass applications. They offer high rejection up to 67 GHz+ for the UBEC and up to 20 GHz for the ULEC. The UBEC/ULEC capacitors also provide very high capacitance stability over temperature (±0.5 %) and voltage. These capacitors are compatible with standard wire bonding assembly (ball and wedge). Top electrodes are in 3µm Aluminum (Al/Si/Cu). Ultra broadband performance up to 67 GHz+ Resonance free Phase stability High stability of capacitance value over temperature, voltage and aging Low ESL Can be directly mounted on the PCB using die bonding and wire bonding(s). Capacitors with top electrodes in 3 µm Aluminum (Al/Si/ Cu). Other top finishings available on request (ex: Ti/Cu/Ni/Au). Compatible with standard wire bonding assembly (ball and wedge). Tape and reel, waffle pack, film frame carrier or raw wafer delivery. Available parts. For other values, contact your IPDiA sales representative Capacitance range 1 nf to 100 nf (*) Capacitance tolerance ± 15 % (*) Operating temperature range -55 C to 150 C Storage temperature - 70 C to 165 C <±0.5 %, from -55 C to +150 C Breakdown voltage (BV) 11 V, 30 V (*) Capacitance variation 0.1 %/V (from 0 V to RVDC) versus RVDC Equivalent Series Inductance Max 50 ph (ESL) SRF Equivalent Series Resistance Max 700 m (ESR) (**) 100 G RVDC, +25 C Negligible, < %/1000 h FIT<0.017 parts/billion hours Capacitor height Max 100 µm. (**) e.g. 100nF/0404/

9 Ultra large-band Wire bondable vertical Silicon Capacitors > 26 GHz (UWSC) UWSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data systems or products. The UWSC are optimized for DC decoupling and bypass applications. They offer high rejection at > 26 GHz. The UWSC capacitors also provide very high capacitance stability over temperature (±0.5 %) and voltage. These capacitors are compatible with standard wire bonding assembly (ball and wedge). The bottom electrode is in Ti/Ni/Au and the top electrode is in Ti/Cu/Ni/Au. Ultra large band performance higher than 26 GHz Resonance free and phase stability Unique capacitance value of 1 nf in 0101 High stability of capacitance value over temperature, voltage and aging Ultra low ESR and ESL and high reliability Capacitance range 10 pf to 100 nf (*) Capacitance tolerance ± 15 % (*) Operating temperature range -55 C to 150 C Storage temperature - 70 C to 165 C <±0.5 %, from -55 C to +150 C Breakdown voltage (BV) 11 V, 30 V, 50 V, 150 V, 450 (**) Capacitance variation 0.02 %/V (from 0 V to RVDC) versus RVDC Can be directly mounted on the PCB using die bonding and wire bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/ Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu). Compatible with standard wire bonding assembly (ball and wedge). Tape and reel, waffle pack, film frame carrier or raw wafer delivery. Equivalent Series Inductance(ESL) typ 6 ph SRF Equivalent Series Resistance(ESR) typ. 14 m (**) 100 G RVDC, +25 C Negligible, < %/1000 h FIT<0.017 parts/billion hours Capacitor height Max 250 µm or 100 µm (**) e.g. 10nF/0303/BV 50V Available parts. For other values, contact your IPDiA sales representative High Temperature Automotive Silicon Capacitors up to 200 C (ATSC) The ATSC capacitors target Under-the-Hood electronics and all sensors exposed to harsh conditions in the automotive market segment. These automotive grade capacitors are optimized for decoupling functions. They are manufactured in IPDiA ISO-TS certified facility, under AEC-Q100 conditions up to 200ºC. Qualified according to AEC-Q100 Ultra long 200 C High stability of capacitance value over temperature, voltage and aging 16 V operating voltage Load dump 8 kv HBM ESD Suitable for high temperature leadframe mounting Capacitance range 1 nf to 100 nf (*) Capacitance tolerance ±15 % Operating temperature range -55 to 200 C Storage temperature - 70 to 215 C ±1 %, from -55 to +200 C Breakdown Voltage (BV) 30 V Capacitance variation versus RVDC 0.1 %/V (from 0 V to RVDC) Pad finishing in Aluminum (3 µm thickness +/-10%). Applicable for high temperature wirebonding and other mountings Tape and reel, waffle pack or wafer delivery. Equivalent Series Inductance (ESL) Equivalent Series Resistance (ESR) Typ 500 ph Typ G RVDC, +25 C 20 G RVDC, +200 C Negligible, < %/ h FIT<0.017 parts/billion hours Capacitor height 250 µm typ (*) Available parts. For other values, contact your IPDiA sales representative

10 3D Silicon Capacitors Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. To contact us, to: Date of release:01/03/2016 Rev 2.0 Document ID: Product Line Leaflet HSSC - High Stability and reliability Capacitors LPSC - Low Profile Capacitors 80 µm thick HTSC - High Temperature Capacitors up to 200 C XTSC - Xtreme Temperature Capacitors up to 250 C WBSC / WTSC / WXSC - Wire Bondable vertical Capacitors WLSC - Wire bondable vertical Low profile Capacitors EMSC - Wire bondable and EMbedded low profile Capacitors ETSC / EXSC - High / Extreme Temperature wire bondable Capacitors up to 250 C UBSC / ULSC - Broadband and Ultra Broadband surface mounted Capacitors up to 67 GHz+ UBEC / ULEC - Broadband and Ultra Broadband Embedded Capacitors up to 67 GHz+ UWSC - Ultra large-band Wire bondable vertical Capacitors > 26 GHz ATSC - High Temperature Automotive Capacitors up to 200 C