3D Silicon Capacitors
|
|
- Gyles Fletcher
- 5 years ago
- Views:
Transcription
1 3D Silicon Capacitors Integrated Passive Devices Product Line High Stability Silicon Capacitors Low Profile Silicon Capacitors High Temperature Silicon Capacitors Xtreme Temperature Silicon Capacitors Vertical Silicon Capacitors Wirebond & Embedded Silicon Capacitors
2 IPDiA 3D Silicon Capacitors: the Best Choice for all Demanding Applications IPDiA has developed a unique technology called PICS Passive Integrated Connecting Substrate - that allows a wide range of capacitor values to be integrated on silicon. This unprecedented integration capability - up to 250nF/mm² - is the best innovation to achieve optimized Miniaturization, Reliability and Cost Saving for your design. The Silicon High Density Capacitors can be used throughout a wide range of applications covering functions such as power supply decoupling, signal coupling, pump charging, DC/DC power conversion, etc. IPDiA s technology provides capacitance integration similar to X7R dielectrics with stability and reliability exceeding those of C0G/NP0 ceramic and tantalum capacitors. Temperature Very low temperature variation (from -55 C to 250 C) and DC voltage drifts 4 temperature ranges available From -55 C to +1 C From -55 C to +0 C From -55 C to +200 C From -55 C to +250 C Miniaturization Thin capacitors (down to 50 µm) Smaller footprint than most MLCC Overall smaller system module thanks to SiP integration Reliability Extremely low derating Negligible failure rate prediction (MTTF > C) Electrical Low ESL and tunable ESR Very low leakage current for battery operated devices Lower package parasitic effects due to shorter interconnections Passive integration on Silicon Single component Component array Assembly Chip on Board (COB) Wafer Level Chip Scale Package (WLCSP) Embedded System in Package (SiP) Wirebond Packaging Wafer forms Single bar die (waffle pack) Tape & Reel
3 Vertical Silicon Capacitors (WBSC, WTSC, WXSC) IPDiA Vertical Silicon Capacitors (WBSC) are perfectly adapted for wire bonding on PCB. The WBSC capacitor integration capability (up to 250nF/mm 2 ) gives a smaller footprint than with MLCC technology to meet strict volume constraints. Pad finishing in Aluminum. Other finishings such as copper, nickel or gold are available upon request Assembly: Compatible with standard wirebond WBSC up to 0 C / WTSC up to 200 C WXSC up to 250 C Very low profile Negligible capacitance loss through ageing Extended temperature range Capacitance range pf to nf Operating temperature range -55 C to 250 C (*) Storage temperature range - 70 C to 265 C Temperature coefficient ±1.5 %, from -55 C to +250 C (*) Equivalent Series Inductor (ESL) Max 0 ph Equivalent Series Resistor (ESR) Max 0 m Insulation resistance G min, RVDC, from -55 C to +0 C (*) Capacitor height Max 250 µm (*) i.e : nf/0303 case = WBSC = WTSC = WXSC Breakdown Voltage 7= 30V 6= 50V 5= 0V Size 0= = = 01 3 = = = = f 5 = 1n 6 = n 3 = 9 = u Typ Comp. size A B 0.26 ± ± ± ± ± ± Wirebond & EMbedded Silicon Capacitors (down to 0µm) (EMSC, ETSC, EXSC) IPDiA EMbedded Silicon Capacitors are designed to be compliant with the embedding process for printed circuit board and laminates. The EMSC can also be used with wirebond technologies. Thanks to the high robustness and performance of these silicon passive components, embedded processes are now reliable. Pad finishing in Aluminum. Other finishings such as copper, nickel or gold available are upon request Assembly: Suitable for wirebond & embedded applications EMSC up to 0 C / ETSC up to 200 C EXSC up to 250 C Very low profile 0 µm Low ESL and ESR High capacity value up to 4.7 µf High reliability Extended temperature range Capacitance range 390 pf to 4.7 µf Operating temperature range -55 C to 250 C (*) Storage temperature range - 70 C to 265 C Temperature coefficient ±1.5 %, from -55 C to +250 C(*) (*) Other temperature ranges (up to 250 C) available i.e.: 0 nf/0404 case F.6 Equivalent Series Inductor (ESL) Max 0 ph Equivalent Series Resistor (ESR) Max 0 m Insulation resistance G min, RVDC, from -55 C to +0 C (*) Capacitor height Max 0 µm Typ A Comp. size B = EMSC = ETSC = EXSC T BV S U x Breakdown Voltage 4 = 11V 1= 20V 7= 30V Size F = 0404 H = 0505 I = 0302 S =1208 V =1216 C = 0202 V = 1612 Y = 1616 X =2016 G = = f 3 = p 5 = 1n 6 = n 9 = u
4 High Stability Silicon Capacitors (JEDEC/EIA compatible) (HSSC) IPDiA High Stability Silicon Capacitors avoid the need to oversize the capacitor value for sensitive capacitive circuitry and offer a higher DC voltage stability. The PICS technology developed by IPDiA provides outstanding capacitor stability over the full operating voltage & temperature ranges. The very high and stable insulation resistance of silicon capacitors can improve battery lifetime up to 30 % in mobile applications. automatic soldering technologies (reflow and manual) Capacitance range pf to 3.3 µf (*) Operating temperature range -55 C to 0 C (*) Storage temperature range - 70 C to 165 C Temperature coefficient <±0.5 %, from -55 C to +0 C i.e.: 0 nf/0402 case (temperature, voltage, ageing) (high insulation resistance) Very low ESR and ESL Negligible capacitance change with temperature variation Low profile Equivalent Series Inductor (ESL) Max 0 ph (*) Equivalent Series Resistor (ESR) Max 400 m (*) Insulation resistance 0 G RVDC, 25 C Capacitor height Max 400 µm (*) = HSSC 4 = 11V 3 = = f 5 = 1n 3 = p 6 = n 9 = u Low Profile Silicon Capacitors (0 µm thickness) (LPSC) Low Profile Silicon Capacitors are the most appropriate solution in applications with height constraints. LPSC is the perfect choice for embedded technologies, modules, systems in package, when designers are looking for utmost decoupling behavior. IPDiA PICS technology offers a capacitor integration capability that can reach 250 nf/mm ² and allows considerable downsizing compared with other technologies based on tantalum or ceramic. A thickness of 80 µm is available upon request. automatic soldering technologies (reflow and manual) Very low profile: standard thickness = 0µm (80µm thickness available upon request) Extended operating temperature range with negligible capacitance change with temperature variation Capacitance range pf to 3.3 µf (*) Operating temperature range - 55 C to 0 C (*) Storage temperature range - 70 C to 165 C Temperature coefficient <±0.5 %, from -55 C to +0 C (*) i.e.: 1 µf/1206 case Equivalent Series Inductor (ESL) Max 0 ph (*) Equivalent Series Resistor (ESR) Max 400 m (*) Insulation resistance 0 G RVDC, 25 C Capacitor height Typ 0 µm (*) = LPSC 4 = 11V 2 = 05 0 = f 5 = 1n 3 = = p 6 = n 9 = u
5 High Temp. Silicon Capacitors (up to 200 C - JEDEC/EIA compatible) (HTSC) Thanks to the unique IPDiA silicon capacitor technology, most of the problems encountered in demanding applications can now be solved. High Temperature Silicon Capacitors are dedicated to applications where reliability up to 200 C is the main parameter. The capacitor integration capability (up to 250 nf/mm ² ) offers capacitance value similar to what is obtained with X7R dielectric, but with better electrical performance than C0G/NP0 dielectrics at 200 C. HTSC provides the highest capacitor stability ever reached over the full temperature range -55 C/+200 C with a temperature coefficient lower than ±1%. automatic soldering technologies (reflow and manual) Capacitance range pf to 3.3 µf (*) Operating temperature range -55 C to 200 C (*) Storage temperature range - 70 C to 2 C Temperature coefficient <±1 %,, from -55 C to +200 C i.e.: 0 nf/0402 case Extended operating temperature range (up to 200 C) with low capacitance variation Very low ESR and ESL Equivalent Series Inductor (ESL) Max 0 ph (*) Equivalent Series Resistor (ESR) Max 400 m (*) 50 RVDC, 25 C Insulation resistance 20 RVDC, 200 C Capacitor height Max 400 µm (*) = HTSC 4 = 11V 3 = = f 5 = 1n 3 = p 6 = n 9 = u Xtreme Temp. Silicon Capacitors (up to 250 C - JEDEC/EIA compatible) (XTSC) Xtreme Temperature Silicon Capacitors are ideal for applications subject to extreme conditions up to 250 C. For instance, XTSC range offers a 1 µf in 1206 with a TC<±1.5% over the full -55 C/+250 C temperature range. Ageing, stability of insulation resistance and capacitor value have been optimized to obtain the best product for Hi-Rel applications. automatic soldering technologies (reflow and manual) Extended operating temperature range (up to 250 C) with low capacitance variation Very low ESR and ESL (*) Other values upon request Capacitance range pf to 3.3 µf (*) Operating temperature range -55 C to 250 C Storage temperature range - 70 C to 265 C Temperature coefficient <±1.5 %, from -55 C to +250 C i.e.: 1 µf/1206 case Equivalent Series Inductor (ESL) Max 0 ph **) Equivalent Series Resistor (ESR) Max 400 m **) 50 RVDC, 25 C Insulation resistance RVDC, 250 C Capacitor height Max 400 µm (*) = XTSC 4 = 11V 3 = = f 5 = 1n 3 = p 6 = n 9 = u
6 All rights reserved. Reproduction in whole or part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequences of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Date of release: October 2012 / Rev1.7 Document order number:
LPSC424.xxx Low Profile Silicon Capacitor
LPSC424.xxx - 42 Low Profile Silicon Capacitor Rev 3. Key features Ultra low profile (1µm) High stability of capacitance value: Temperature
More informationHSSC - High Stability Silicon Capacitor 1005 / 0201 / 0402 / 0603 / 0805 / 1206 / 1812
HSSC - High Stability Silicon Capacitor / 2 / 42 / 63 / 85 / 26 / 82 Rev. Key features Ultra high stability : Temperature
More information3D Silicon Capacitors
3D Silicon Capacitors Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation
More informationWTSC144.xxx Wire Bonding Temperature Silicon Vertical Capacitor
WTSC144.xxx Wire Bonding Temperature Silicon Vertical Capacitor Rev 3.1 Key features Full compatible to monolithic ceramic capacitors Ultra high stability of capacitance value: Temperature ±1.5% (-55 C
More information3D Silicon Capacitors
Higher reliability in a smaller package 3D Silicon Capacitors High stability and reliability capacitors Low profile capacitors - 100 μm thick High/extreme temperature capacitors - up to 250 C Wire-bondable
More information3D Silicon Capacitors
Higher reliability in a smaller package 3D Silicon Capacitors High stability and reliability capacitors Low profile capacitors - 100 μm thick High/extreme temperature capacitors - up to 250 C Wire-bondable
More informationAerospace Performances of IPDiA -250 C up to 250 C Grade Silicon Capacitors
Aerospace Performances of IPDiA -250 C up to 250 C Grade Silicon Capacitors Laurent Lengignon, IPDiA, 2 rue de la Girafe, 14000 Caen, France Alter Technology, Madrid, Spain, Demetrio Lopez ESA/ESTEC, Noordwijk,
More informationAutomotive Grade Silicon Capacitors for Under the Hood Applications
Automotive Grade Silicon Capacitors for Under the Hood Applications Sébastien Jacqueline, Laurent Lengignon, Laëtitia Omnès IPDiA, 2 rue de la Girafe, 14000 Caen, France laetitia.omnes@ipdia.com, +33 (0)
More informationCommercial Chip - R3L 16Vdc to 5kVdc
Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N22 dielectric with an energy density that exceeds conventional
More informationNon Magnetic Chip C0G & X7R
Non Magnetic Chip CG & X7R This range of MLC chip capacitors that are completely non magnetic. They are designed to operate in non magnetic environments such as Magnetic Resonance Imaging (MRI) and Nuclear
More informationUHF power MOS transistor IMPORTANT NOTICE. use
Rev. 5 1 September 215 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 215 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon,
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D175. BLF202 HF/VHF power MOS transistor. Product specification Supersedes data of 1999 Oct 20.
DISCRETE SEMICONDUCTORS DATA SHEET M3D175 Supersedes data of 1999 Oct 2 23 Sep 19 FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch. PINNING
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
More informationMLCC with FLEXITERM. General Specifications GENERAL DESCRIPTION APPLICATIONS PRODUCT ADVANTAGES HOW TO ORDER C 104 K A Z 2 A
General Specifications GENERAL DESCRIPTION With increased requirements from the automotive industry for additional component robustness, AVX recognized the need to produce a MLCC with enhanced mechanical
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF244 VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17.
DISCRETE SEMICONDUCTORS DATA SHEET M3D65 Supersedes data of 1997 Dec 17 23 Oct 13 FEATURES PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability Withstands full load
More informationCommercial Chip - C0G 16Vdc to 10kVdc
Commercial Chip - CG 16Vdc to 1kVdc A range of commercial MLC chip capacitors in Ultra stable EIA Class I CG, or NP, dielectric. CG chips are used in precision circuitry requiring Class I stability and
More informationMulti Layer Ceramic Capacitor
Description MLCC consists of a conducting material and electrodes. To manufacture a chip-type SMT and achieve miniaturization, high density and high efficiency, ceramic condensers are used. POE s MLCC
More informationDATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
More informationMLCC with FLEXITERM. General Specifications GENERAL DESCRIPTION APPLICATIONS PRODUCT ADVANTAGES HOW TO ORDER
General Specifications GENERAL DESCRIPTION With increased requirements from the automotive industry for additional component robustness, AVX recognized the need to produce a MLCC with enhanced mechanical
More informationLow-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages
19-2040; Rev 1; 6/01 Low-Voltage Analog Temperature Sensors General Description The precision, low-voltage, analog output temperature sensors are available in 5-pin SC70 and SOT23 packages. The devices
More informationSurface Mount Multilayer Ceramic Chip Capacitors for Ultra Small Commodity Applications
Surface Mount Multilayer Ceramic Chip Capacitors for Ultra Small Commodity Applications FEATURES High capacitance in unit size High precision dimensional tolerances Suitably used in high-accuracy automatic
More informationSurface Mount Multilayer Ceramic Chip Capacitors Prohibit Surface Arc-Over in High-Voltage Applications
Surface Mount Multilayer Ceramic Chip Capacitors Prohibit Surface Arc-Over in High-Voltage Applications ELECTRICAL SPECIFICATIONS FEATURES For this Worldwide Patented Technology Specialty: high-voltage
More informationDATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
More informationIsland Labs. UHF push-pull power MOS transistor. Island Labs PIN CONFIGURATION
Philips Semiconductors FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. DESCRIPTION Dual push-pull silicon
More informationAluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical
Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D091. BLF548 UHF push-pull power MOS transistor. Product specification Supersedes data of Oct 1992.
DISCRETE SEMICONDUCTORS DATA SHEET M3D91 UHF push-pull power MOS transistor Supersedes data of Oct 1992 23 Sep 26 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold
More informationSurface Mount Multilayer Ceramic Chip Capacitors with Integrated Resistor for High Pulse Current Applications
Surface Mount Multilayer Ceramic Chip Capacitors with Integrated Resistor for High Pulse Current Applications FEATURES Integrated resistor on the surface of the Available capacitor Low electrostrictive
More informationDISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
More informationCeramic Chip Capacitors
Version 17.11 Ceramic Chip Capacitors Table of Contents How to Order - AVX Part Number Explanation...2-3 C0G (NP0) General Specifications...4 Specifications and Test Methods...5 Range...6-7 U RF/Microwave
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF242 HF-VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17.
DISCRETE SEMICONDUCTORS DATA SHEET M3D65 Supersedes data of 1997 Dec 17 23 Oct 13 FEATURES PIN CONFIGURATION High power gain Low noise Easy power control Good thermal stability 1 4 Withstands full load
More informationLow Inductance Ceramic Capacitor (LICC)
Low Inductance Ceramic Capacitor (LICC) LICC(Low Inductance Ceramic Capacitor) is a kind of MLCC that is used for decoupling in High Speed IC. The termination shape of LICC is different from that of MLCC.
More informationDATA SHEET. BLF246B VHF push-pull power MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct 10.
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D75 VHF push-pull power MOS transistor Supersedes data of 21 Oct 1 23 Aug 4 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal
More informationPINNING - SOT223 PIN CONFIGURATION SYMBOL
BUK78-55 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface V DS Drain-source
More informationDATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose & High capacitance Class 2, X5R
DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose & High capacitance Class 2, 6.3 V TO 50 V 10 nf to 100 µf RoHS compliant Product Specification Product specification 2 Surface-Mount
More informationAluminum Capacitors SMD (Chip) Long Life Vertical
Not for New Designs - Alternative Device: 53 CRV 53 CLV 40 CLH FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationAluminum Capacitors SMD (Chip), High Temperature
Not Recommended for New Designs, Use 50 CR Aluminum Capacitors SMD (Chip), High Temperature 50 CL 53 CRV Lead (Pb)-free 40 CLH 5 C high temperature 53 CLV Fig. low 50 CL QUICK REFERENCE DATA DESCRIPTION
More informationDATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose & High capacitance Class 2, X5R
DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose & High capacitance Class 2, 6.3 V TO 50 V 10 nf to 100 µf RoHS compliant Product Specification Product specification 2 Surface-Mount
More informationCER Series Controlled ESR Capacitors
CER Series Controlled ESR Capacitors Type: CERB (C1608) CERD (C2012) Issue date: April 2011 TDK MLCC US Catalog REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS 1. If you intend
More informationAluminum Capacitors SMD (Chip) Long Life Vertical
Aluminum Capacitors SMD (Chip) Long Life Vertical FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction requiring minimum
More informationDATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current
More informationPRODUCTION DATA SHEET
The positive voltage linear regulator is configured with a fixed 3.3V output, featuring low dropout, tight line, load and thermal regulation. VOUT is controlled and predictable as UVLO and output slew
More informationDATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
More informationS-882Z Series ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP. Rev.1.2_00. Features. Applications.
ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP The is a charge pump IC for step-up DC-DC converter startup, which differs from conventional charge pump ICs, in that it uses
More informationATC 200 A Series BX Ceramic Multilayer Capacitors
200 A Series BX Ceramic Multilayer Capacitors Case A Size Capacitance Range (.055" x.055") 5 pf to 0.01 µf Low ESR/ESL Mid-K Rugged High Reliability Construction Extended VDC Available, the industry leader,
More informationConductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance
Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance FEATURES Long useful life: up to 5000 h at 105 C Very low ESR and highest ripple current SMD-version with base plate, lead (Pb) free reflow
More informationPINNING - SOT223 PIN CONFIGURATION SYMBOL
BUK86A GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level fieldeffect power transistor in a plastic envelope V DS Drainsource voltage 6 V suitable
More informationPINNING - SOT404 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source voltage 55 V suitable
More informationDATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
More informationDouble-Sided Chip Resistors
Double-Sided Two parallel resistance elements in a single chip Excellent pulse withstand performance Laser trimmed up to 0.5% tolerance Enhanced working voltage Enhanced power rating Pb-free terminations
More informationDATA SHEET SURFACE MOUNT MULTILAYER CERAMIC CAPACITORS General purpose & High capacitance Class 2, X5R
DATA SHEET SURFACE MOUNT MULTILAYER CERAMIC CAPACITORS General purpose & High capacitance Class 2, 4 V TO 50 V 100 pf to 100 µf RoHS compliant & Halogen free Product Specification Product specification
More informationAT Series. High Temperature MLCC 200ºC & 250 C Rated HOW TO ORDER ELECTRICAL SPECIFICATIONS DIMENSIONS AT10
Present military specifications, as well as a majority of commercial applications, require a maximum operating temperature of 25 C. However, the emerging market for high temperature electronics demands
More informationIMPORTANT NOTICE. use
Rev. 4 1 September 215 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 215 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon,
More informationDATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
More informationAluminum Capacitors SMD (Chip) Standard. Table 1
085 CS Aluminum Capacitors Fig.1 Component outlines longer 085 CS 139 CLL life QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case sizes (L x W x H in mm) 8.8 x 3.7 x 3.9 and 11.9 x 3.7 x 3.9 Rated capacitance
More informationDATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line
More informationYageo MLCC Introduction
Yageo MLCC Introduction MLCC PM Team Oct. 2011 1 Introduction Purpose To give overview of multilayer ceramic capacitors (MLCC) Objectives To understand the theory and construction of MLCC To explain different
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLF542 UHF power MOS transistor. Product specification Supersedes data of 1998 Jan 08.
DISCRETE SEMICONDUCTORS DATA SHEET M3D76 Supersedes data of 1998 Jan 8 23 Sep 18 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Withstands
More informationUHF power MOS transistor IMPORTANT NOTICE. use
Rev. 6 1 September 215 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 215 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon,
More information4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
More informationPDN Planning and Capacitor Selection, Part 1
by Barry Olney column BEYOND DESIGN PDN Planning and Capacitor Selection, Part 1 In my first column on power distribution network (PDN) planning, Beyond Design: Power Distribution Network Planning, I described
More information2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
More informationFEATURES SYMBOL QUICK REFERENCE DATA. V DSS = 55 V Very low on-state resistance Fast switching
PHP37N6LT, PHB37N6LT, PHD37N6LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = 55 V Very low on-state resistance Fast switching I D = 37 A Stable off-state characteristics High thermal
More informationMultilayer Ceramic Capacitors High Capacitance Series
Applications: Description: MLCC consists of a conducting material and electrodes. To manufacture a chip-type SMT and achieve miniaturization, high density and high efficiency, ceramic condensers are used.
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More informationSolid Tantalum SMD Capacitors TANTAMOUNT, Hi-Rel COTS, Low ESR, Metal Case
Solid Tantalum SMD Capacitors TANTAMOUNT, Hi-Rel COTS, Low ESR, Metal Case PERFORMANCE CHARACTERISTICS Operating Temperature: -55 C to +125 C (above 85 C, voltage derating is required) Capacitance Range:
More informationSurface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications
Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications ELECTRICAL SPECIFICATIONS X7R GENERAL SPECIFICATION Note Electrical characteristics at +25 C unless otherwise specified
More informationDATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jun 23 22 Feb 19 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon. APPLICATIONS
More informationMOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
More informationSwitched-Capacitor Voltage Doublers
9-; Rev 3; / Switched-Capacitor Voltage Doublers General Description The ultra-small / monolithic, CMOS charge-pump voltage doublers accept input voltages ranging from +.V to +.V. Their high voltage-conversion
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF245 VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17.
DISCRETE SEMICONDUCTORS DATA SHEET M3D65 Supersedes data of 1997 Dec 17 23 Sep 2 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. DESCRIPTION
More informationDATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General Purpose & High Capacitance Class 2, X7R
Product Specification May 26, 2015 V.12 DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General Purpose & High Capacitance Class 2, 6.3 V TO 50 V 100 pf to 22 µf RoHS compliant & Halogen Free Product
More information2011 New Products of MLCC
2011 New Products of MLCC 1 SAFETY CERTIFIED CHIP CAPACITOR. The The safety safety capacitors capacitors offered offered by by are are designed designed for for surge surge or or lightning lightning immunity
More informationBUK71/ AIE. TrenchPLUS standard level FET. BUK AIE in SOT426 (D 2 -PAK) BUK AIE in SOT263B (TO-220AB).
Rev. 1 9 August 22 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state
More informationMultilayer ceramic capacitors
Array capacitors, Date: October 2006 Data Sheet EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS prior express consent is
More informationTrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
More informationTO220AB & SOT404 PIN CONFIGURATION SYMBOL
BUK754-55A BUK764-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source
More informationN-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)
M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low
More informationRegulated 3.3V Charge Pump MAX679
19-1217; Rev ; 4/97 Regulated 3.3 Charge Pump General Description The step-up, regulated charge pump generates a 3.3 ±4% output voltage from a 1.8 to 3.6 input voltage (two alkaline, NiCd, or NiMH; or
More informationDATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
More informationSCB10H Series Pressure Elements PRODUCT FAMILY SPEFICIFATION. Doc. No B
PRODUCT FAMILY SPEFICIFATION SCB10H Series Pressure Elements SCB10H Series Pressure Elements Doc. No. 82 1250 00 B Table of Contents 1 General Description... 3 1.1 Introduction... 3 1.2 General Description...
More informationDATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
BUK755-3A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using V DS Drain-source voltage
More informationPMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET
M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
More informationAluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance, High Vibration Capability
Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance, High Vibration Capability FEATURES Extended useful life: up to 6000 h at 25 C Polarized aluminum electrolytic capacitors, non-solid
More informationBUK A. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 29 January 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS
More informationNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
More informationDATA SHEET. SURFACE MOUNT MULTILAYER CERAMIC CAPACITORS General purpose & High capacitance Class 2, X5R. 4 V TO 50 V 100 pf to 100 µf
Product Specification March 31, 2014 V.17 DATA SHEET SURFACE MOUNT MULTILAYER CERAMIC CAPACITORS General purpose & High capacitance Class 2, 4 V TO 50 V 100 pf to 100 µf RoHS compliant & Halogen free Product
More informationHIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS
DESCRIPTION: RoHS compliant (*) Capacitors 0805 to 6560 Rated voltage 1000V to 10KV Dielectric Type I and II SMD and leaded versions * Non RoHS version still maintained for current applications. I. Foreword
More informationDATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
More informationAluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance High Vibration Capability
Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance High Vibration Capability FEATURES Useful life: up to 2000 h at 50 C High reliability Low ESR Polarized aluminum electrolytic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On February the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
More informationMultilayer ceramic capacitors
Array capacitors, Date: October 2006 Data Sheet EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS prior express consent is
More information2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
More information4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationProsperity Dielectrics Co., Ltd. 1 ACS-1045 Rev15
1. DESCRIPTION MLCC consists of a conducting material and electrodes. To manufacture a chip-type SMT and achieve miniaturization, high density and high efficiency, ceramic condensers are used. WTC high
More informationBF545A; BF545B; BF545C
Rev. 3 5 August 24 Product data sheet. Product profile. General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic
More information