The quantised Hall resistance as a resistance standard

Transcription

1 Federal Department of Justice and Police FDJP Federal Office of Metrology METAS The quantised Hall resistance as a resistance standard Blaise Jeanneret

2 The quantised Hall resistance (QHR) as a resistance standard metas B. Jeanneret Federal Office of Metrology (METAS) Outline Introduction Physical properties of the QHR Cryogenic Current Comparator Universality of the QHR QHR and the SI Applications AC-QHE Conclusions 1 ppb = 1 part in 10 9

3 Introduction R K = h/e 2 = Ω

4 Ideal systems: T = 0 K, I = 0 A No dissipation: R xx = 0 Real experiment: T > 0.3 K, I = 40 µa Non-ideal samples Dissipation: R xx > 0 R H (i) = h/ie 2 R H (i, R xx 0) = h/ie 2?? R H (i) is a universal quantity Localization theory, Edge state model Is R H (i) a universal quantity? Independent of device material, mobility, carrier density, plateau index, contact properties...? Few quantitative theoretical models available empirical approach, precision measurements

5 Temperature dependence Thermal activation: 1 K T 10 K electrons thermally activated to the nearest extended states xx T = 0 xx e kt = E F E LL xy T = xy (T) ie2 h xy (T) = s xx (T) Cage et al. 1984: 1.2 K < T < 4.2 K, 2 GaAs samples, i = 4, I = 25 µa < s < -0.51

6 Current dependence GaAs T = 0.3 K i = 2 W = 400 µm Breakdown

7 The cryogenic current comparator (CCC): Principles Meissner effect: Harvey 1972

8 The CCC bridge: SQUID: N P I P = N S I S (1 d) Detector: with d = N t N S R L R L R H U m = R S I S R P I P R P R S = N P 1 N S 1 d 1 1 U m U

9 Ratio accuracy: W 1 = N(1 w 1 ) W 2 = N(1 w 2 ) U SQUID ( w 1 w 2 ) Windings in a binary series: 1, 1, 2, 4, 8, 10, 16, 32, 32, 64, 100, 128, 256, 512, 1000, 1097, 2065, 4130

10 Ratio accuracy

11 Performances: rms-noise nv 0.25 Hz Ratio Johnson Detekt. SQUID ideal meas 10 k : R H (4) : : For a typical comparison: R P = R H (2) N P = 2065 R S = 100 Ω N S = 16 I P = 50 µa Noise: 7 nv / Hz 1/2 U A = 2 nω / Ω in 2 min

12 Universality of the quantum Hall effect Width dependence Contact resistance Device material: MOSFET, GaAs and GRAPHENE Device mobility Plateau index.

13 Width dependence Theoretical model: R H (i) R H (i) = l w 2 A. H. MacDonald, P. Streda, 1984 B. Shapiro, 1986 W. Brenig and K. Wysokinski, 1986 R. Johnston and L. Schweitzer, R H (i) = R H (i,w) R H (i,w = ) l = /eb magnetic length No theoretical prediction for

14 Experiment Samples: µ = 42 T -1 n = 4.8 x m µm Measurement procedure: Cooling rate: a couple of hours T = 0.3K V xx measured before and after measurements OFMET 200 µm 50 µm EPFL 20 µm 10 µm Trypically R xx < 100 µω R H measured on two contact pairs Reference sample: 1 mm wide

15 No size effect observed within the measurement uncertainty Value of : 2 = ( ) = ( ) 10 3 Deviation on 500 µm wide samples: i = 2 < ppb i = 4 < ppb No influence

16 Effect of the contact resistance R c M. Büttiker, 1992:...It is likely, therefore, that in the future, contacts will play an essential role in assessing the accuracy of the QHE. On a perfectly quantised plateau: R c (P1) = V P1-P2 / I To induce a high value of R c : 1) Apply a high voltage (10-20V) at B = 0 2) Cool the QHR to base T in 2-3 min

17 GaAs Samples T = 0.3 K I = 20 µa No simple relation between R H and R c Deviation of R H related to finite V xx R c < 10 Ω R H / R H < 1 ppb

18 Infrared illumination: Pulses with a 900 nm diode R c Cable resistance 8.5 Ω

19 MOSFET-GaAs Hartland et al., NPL, 1991: Direct comparison of two QHR using a CCC R H MOSFET GaAs R H Kawaji, Yoshihiro (ETL), vandegrift (NIST) 1992: Deviations in R H (4) up to 0.3 ppm despite the absence of dissipation. MOSFET with small critical current, low gate voltage Theoretical model by Heinonen et al.: Perfect quantization with dissipation (short range elastic scatterers located at the edges)

20 MOSFET measurements Jeckelmann et al., OFMET, 1996 R H MOSFET GaAs R H

21 SONY MOSFET Anomalous results can be explained by: contact effects asymmetric longitudinal voltages R xx 0 R H = 0

22 Graphene: Nobel Prize 2010 metas xy 4 e 2 1 = N h 2 Novoselov et al., Science 315, 2007 Novoselov et al., Nature 438, 2005 Cryogen free QHE at 4 K and 2-3 T

23 Graphene (courtesy JT Janssen NPL) metas - Epitaxial single layer - R c = 1.5 Tzalenchuk, TJBMJ et al. Nature Nanotechnology 5, 186 (2010)

24 Graphene (courtesy of JT Janssen NPL) metas Accuracy of resistance quantization: QHE breakdown 3 ppb at 300 mk Mean relative deviation of R xy from R K /2 at different I sd. 4.2 K 300 mk

25 Mobility R H independent of the device mobility or the fabrication process to 2 parts in 10-10

26 Step ratio measurements R H independent of the plateau index to 3 parts in i R H (i) 2 R H 2 i =1,3, 4,6,8 = 1 ( ) 10 10

27 Summary metas The quantum Hall resitance is a universal quantity independent of: Device width Device material: MOSFET-GaAs, Graphene Device mobility Plateau index R H (i, R xx 0) = h/ie 2..to a level of 3 parts in B. Jeckelmann and B. Jeanneret Rep. Prog. Phys. 64, 1603, 2001 Negligible dissipation: Small measuring current I << I c = 0.6 ma/mm Low temperature T < 1.2 K Good quality electrical contacts R c < 10 Ω CCEM Technical Guideline: F. Delahaye and B. Jeckelmann Metrologia 40, , (2003)

28 The SI unit: the Ampere metas Définition: L ampère est l intensité d un courant constant qui, maintenu dans deux conducteurs parallèles, rectilignes, de longueur infinie, de section circulaire négligeable et placés à une distance de 1 mètre l un de l autre dans le vide, produirait entre ces conducteurs une force égale à 2 x 10 7 newton par mètre de longueur. F l = I I d 0 = Vs / Am c 2 = c, 0, 0 are exact!! The definition does not lead to a practical realisation of the Ampere!!!

29 The SI realisation of the Ohm: the calculable capacitor metas Thompson-Lampard Theorem (1956): exp( C ' 1 ) exp( C ' 2 )=1 0 0 Cross-capacitance identical: C ' = 0 ln(2) 1.95 pfm 1

30 Measurements: L = 5-50 cm C = pf u = 10-8

31 CODATA 98: NPL88: R k / R k = 5.4 x 10-8 NIST97: R k / R k = 2.4 x 10-8 NML97: R k / R k = 4.4 x 10-8 NIM95: R k / R k = 1.3 x 10-7

32 A conventional value for R K SI Realization of R K : Reproducibility of R H : a few parts in 10 8 uncertainty a few parts in uncertainty 2 orders of magnitude! Conventional value (exact): CCE R K-90 = Ω K J-90 = GHz/V Josephson effect: K J = 2e/h

33 International QHR Key-comparison metas

34 Applications: DC Resistance Standard (data METAS) 100 Ω Resistance standard Deviation from fit < 2 nω/ω over a period of 10 years

35 Applications: QHR Arrays On chip, large array of Hall bars (up to 100 devices) Series-parallel connection scheme: R = R K / 200 Accuracy of the quantization: 5 parts in 10 9 (T = 1.3 K, i = 2) Behave like a single Hall bar Transportable resistors for international comparison Nominal value of 100 Ω can be fabricated

36 Applications: QHE array 10 mm metas i = 2 W.Poirier et al. LNE

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39 Applications: Capacitance calibration SI realisation of the Farad: Calculable capacitor Complicated experiment Representation of the Farad: DC QHE New route: AC measurements of the QHR

40 AC measurements of the QHE i = 2 T = 1.3 K I = 40 µa f = 800 Hz Narrow bumpy plateau (PTB, NPL, NRC, BIPM) Frequency dependence: R H ( i, w = w = / khz Measurements problem: AC Losses Delahaye 94

41 AC measurements of the QHE (no back gate) T = 0.3 K i = µa 100 µa 100 µa Extrapolate to zero at zero dissipation

42 AC-QHE: Phenomenological Model metas d: effective thickness Does not depend on frequency Displacement current sheet density Susceptibility: 2D Model (no gates, no screening electrodes, d << L, d << w..) Model fully explain the measurements (frequency dependence): B. Jeanneret et al. 2006

43 AC Losses metas z V H B y x Hp Lc i i H Hc Lp i l d V G Z H = V H i = V H i H i l R H 1 R H i V l = R H H 1 Overney et al., 2003

44 Double-shielding technique (courtesy J. Schurr, PTB) metas Meet the defining condition: ALL currents which have passed the Hall-potential line are collected and measured. Adjust the high-shield potential su so that dr H /di = 0. B.P. Kibble, J. Schurr, Metrologia 45, L25-L27 (2008).

45 Realization of the capacitance unit (courtesy J. Schurr, PTB) 10 nf10 nf 10 nf wrc = 1 quadrature bridge frequency QHR R K QHR = he / 2 10:1 bridge 1 nf 10:1 bridge 100 pf 10:1 bridge 10:1 calibration - relative uncertainty of 10 pf: (k = 1) (cryogenic quantum effect without calculable artefacts) - quantum standard of capacitance, analogous to R DC 10 pf J. Schurr, V. Bürkel, B. P. Kibble, Metrologia 46, , 2009

46 Conclusions metas R H is a universal quantity QHR improved electrical calibration in National Metrology Institutes QHR allows a representations of the Farad QHR is a primary standard for impedances: AC-QHE Future development: Graphene