Quantum Informa,on with NV- Centers (QINVC)

Transcription

1 Quantum Informa,on with NV- Centers (QINVC) Jan Meijer (Uni Leipzig) Coopera,on between CEA Saclay France, ENS Cachan France, University StuKgart Germany, University Leipzig Germany, University Warwick United Kingdom

2 Partner 1: CEA- Saclay, Paris D. Esteve group Research Group in Quantum Electronics, CEA- Saclay, France Exper,se: Daniel Esteve (Coordinator) Superconduc,ng quantum circuits Mesoscopic physics Hybrid systems Patrice Bertet

3 Partner 2: ENS Cachan, Paris J.- F. Roch group Exper,se: Quantum op,cs Op,cal and spin proper,es of NV centers AFM with NV- centers Jean- Francois ROCH

4 Partner 3: Uni Stutgart (Germany) Jörg Wrachtrup group Exper,se: Spin physics and spin proper,es Direct coupling Inventor of the NV centers as quantum device Jörg Wrachtrup

5 Partner 4: University Leipzig (Germany) J. Meijer group Exper,se: Single ion Implanta,on First crea,on of ar,fical NV centers S. Pezzagna J. Meijer S. Pezzagna Small 2010 (Former Prof. Butz group)

6 Partner 5: Uni. Warwick (United Kingdom) Mark Newton group Exper,se: Diamond crystal grown (E6) NMR, ESR

7 Material Science Group Solid state quantum Physics P5 Uni Warwick Diamond Growth Characterisa,on P4 Uni Leipzig Addressing of Single NVs P1 CEA Saclay Superconduc,ng Hybrid Circuts P2 ENS Cachan Quantum Op,cs P3(Uni. StuKgart) Spin Physcis Start 2011 ; Dura,on 36 month

8 Quantum Informa,on with NV- Centers (QINVC) Why NV Centers?

9 Color centers in diamond G- Band: Sp 2 - Inclusion H3- center 3H- Center NV- center Pink star: 62 Mio. Euro J. Rödiger, A. Zaitsev,J. Meijer et. al Unpubl,

10 NV proper,es

11 NV Spin proper,es Optically Detected Magnetic Resonance dark state Fluorescence (a. u.) bright state MW frequency (GHz) V N V N The main goal to do spin-spin coupling (for the distance < 20 nm with T 2 ~ 1 ms) Lesik et al 2013 G.Balasubramanian et al., Nature Materials 8, (2009) P.Neumann et al., Nature Physics 6, (2010)

12 NV- centers Easy to ini,alized Long T2,mes, low decoherence Single shot readout Quantum gate opera,on Scalable - > DiVincenzo criteria to build a quantum computer

13 Two Strategies: AFM Quantem Bus hybrid system with superconduc,ng qubits

14 Hybrid Quantum Computer

15 Hybrid System CEA Sacley

16 Single Spin Coupling CEA Sacley

17 AFM Quantum Bus Cachan, UStuK

18 RealizaFon idea: producfon of NV- centers by N implantafon into diamond requirements: technical solufons to implant countable single ions with nm spafal resolufon Physical solu,on: high yield produc,on of NV centers, charge state control, mobility of NV

19 Our aims for NV centres Nanoscalability Nanometer placement Scalability / Reproducibility Shallow centres bulk centres Conversion efficiency Charge state Overall properbes Using Nitrogen ion implantabon

20 Ion implantabon - straggling Proton beam (3 MeV) in diamond N + ions 1 MeV N + ions 5 kev 750 nm Low straggling => high resolution Simula,on with SRIM J. Ziegler, hkp://srim.org

21 CreaBon efficiency (N - > NV) Scan of the diamond surface implanted with 1x10 13 nitrogen/cm² 20µm Pezzagna et al., New Journal of Physics 2010, 12,

22 Ion implantabon towards nm resolubon Collimation apertur e Positioning + AFM, STM Resolution of the table ~ 1 nm Meijer et al., Appl. Phys. A 91, 567 (2008)

23 Atomic force microscope 50µm Hole made by Focussed Ion Beam Ga + 30keV Tip hole

24 Reduced hole => below 20 nm Non Contact Mode: We can implant into pillars, phtomic crystalls etc. Pezzagna et al., Small. 6, 2117 (2010)

25 Nitrogen Focused Ion Beam (FIB) In collabora,on with Orsay Physics A wide range of applica,ons Lesik et al., Phys. Stat. Sol. A (2013) Cachan, ULeip

26 High resolubon ion implantabon «Meijer, APL (2005) «Pezzagna, PSSa (2011) «Spinicelli, NJP (2011) «Toyli, NanoLeK (2010) «Lesik, PSSa (2013) «Pezzagna, Small (2010) Pezzagna et al., New J Phys. 13, (2011)

27 RealizaFon idea: producfon of NV- centers by N implantafon into diamond requirements: technical solufons to implant countable single ions with nm spafal resolufon Physical solu,on: high yield produc,on of NV centers, charge state control, mobility of NV

28 Material: E6: 3x3 mm (100) op,cal grade! 100kV CN - Implantaion NV- center H3- center NV 0 NV - 3H- Center ULeip, UStuK J. Rödiger, A. Zaitsev, J. Meijer et. al Unpubl,

29 Crea,on Efficiency UStuK, Warwick

30 Crea,on Efficiency 10x Improvment by anneling op,miza,on

31 No 1100 C 90 min Cachan, ULeip resolu,on 5 nm Wildanger, Roch, Meijer 2012 in prep. Diffusion of single NV? Op,cal detec,on of single NVs:

32 ODMR for orienta,on control Magne,c field Wildanger, Roch, Meijer 2012 in prep.

33 ODMR: Orienta,on of single NVs? No 1100 C 90 min Wildanger, Roch, Meijer 2012 in prep.

34 Charge state control Ac,ve control by applied voltage

35 Individual Adressing Ac,ve control by applied voltage CB 5,47eV 2,0eV 1,2eV NV - NV 0 NV +? Φ E F VB Charge state of NV

36 Bipolar: In- plane PIN- Diode Lohrmann, et al. APL 2011 SP- LED by growing: N. Mizuochi et al. Nature photonics 2012

37 PL- Intensity of a single NV from NV - to NV 0 Lohrmann et al unpubl. May be a dynamic process? beker NV + - > NV -?

38 Addressing of NVs by ac,ve charge control MW Ini,aliza,on

39 Addressing of NVs by ac,ve charge control MW Ini,aliza,on

40 Addressing of NVs by ac,ve charge control Ini,aliza,on

41 Addressing of NVs by ac,ve charge control Ini,aliza,on

42 Conclusion Material science: Op,miza,on in NV produc,on Addressing of NV within 15 nm NVs stable un,l 1300 C No 1100 C First results in coupling NV and superconduc,ng qubits Opimiza,on of the AFM- bus system

43 Thank You! coopera,on with I. Rangelow,Ilmenau and L. Bischop FZR