Photoelectric readout of electron spin qubits in diamond at room temperature

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1 Photoelectric readout of electron spin qubits in diamond at room temperature. Bourgeois,, M. Gulka, J. Hruby, M. Nesladek, Institute for Materials Research (IMO), Hasselt University, Belgium IMOMC division, IMC, Belgium Meeting of Cost action NQO Brussels, 4 April 9

2 NV centres in diamond for quantum technologies NV - : triplet spin system ±> Spin state of NV µm GS : - Optical initialization into m s = - MW manipulation - Optical read-out NV + (4 electrons) NV (5 electrons) NV (6 electrons) A ±> MW ~.87 GHz NV - in ultra-pure, isotopically purified diamond: T ~ ms at RT [N s ] < ppb [ C] <. % NV ground state can be used as RT qubit for Quantum information processing Quantum computation Quantum sensing (Magnetometry, electric field sensing, thermometry, nanoscale NMR, gyroscopy, quantum sensing in biological environment, etc.)

3 NV centres for quantum sensing Applications of NV centers for quantum sensing: - Magnetometry, - lectric field sensing, - Thermometry, - Strain and pressure sensing, etc. Zeeman splitting between +> and > spin sublevels under external magnetic field µm Ultra-sensitive sensing with NV ensembles* Vector magnetometry with NV ensembles ±> xcitation ~ 5 nm Nanoscale sensing with a single NV centre** +> MW ~.87 GHz ±> NV - A g µ B B NV > *A. Nowodzinski et al., Microelectronics reliability 55 (5) **Maletinski P. et al., Nature Nanotechnology 7, 4 ()

4 Optical detection of NV magnetic resonances (ODMR) µm Normalized PL (arb. units).6 NV - ZPL.4 69 nm.. NV ZPL 575 nm Lambda (nm) Spin-selective transitions to NV - metastable state Photostability (no photobleaching) High PL yield (single NV detection) Normalized PL intensity (Arb. Units) Spin-dependence of PL intensity No external magnetic field.5 mt magnetic field along [] direction Spindependence of PL intensity MW frequency (MHz) ±> A ±> xcitation ~ 5 nm Less bright ±> Bright NV - A ZPL ~ 69 nm MW Metastable state lifetime: ~ ns Limitations of ODMR Spatial resolution limited by optical diffraction High photon collection efficiency requires complex microfabrication Objective NA:.95, 5 nm excitation, mw, LP65 4

5 Photoelectric detection of magnetic resonances (PDMR) Alternative to ODMR for readout of NV spin state: Direct detection of spin-dependent photocurrent induced by ionization of NV PDMR set-up Oxidized single crystal diamond plate NV - NV NV + e NV - + h NV - ionization induced by laser light DC electric field in between coplanar electrodes CW MW field Lock-in amplifier Pulsed laser light to Hz Reference Advantages compared to ODMR: Direct integration of NV to electronic chip PDMR set-up S GS NV - MS to µm in between electrodes to 5 4 V cm - NV -photon: - Ionization of NV - Back-conversion from NV to NV More compact and easily scalable Readout of single NV centers closer than the diffraction limit High detection rates without complex microfabrication. Bourgeois, M. Gulka, J. Hruby, M. Nesladek, et al. Nat. Commun. 6 (5) 5

6 Photoelectric readout of NV spin ensembles CW PDMR on ~ 9 NVs in irradiated Ibdiamond y ( ) 7.x 6.8x CW PDMR on large NV ensembles No external magnetic field xternal magnetic field along [] direction xternal magnetic field along [] direction ODMR x 6.x PL (cts/s) PDMR Microwave frequency (MHz) Downscaling of PDMR to small NV ensembles Photocurrent (fa) P LASR = 9 mw P MW = 4.9 W 5 NV 9 NV NV 8 NV PC (na) Pulsed MW-triggered PDMR on ensembles of ~ 5 to NVs implanted in electronic grade diamond Photoelectric readout of coherently driven NV centres Photocurrent (pa) MHz 8 MHz MHz 6 MHz MHz τ RAM (ns) Ramsey fringes detected on ~ shallow NVs implanted in electronic grade diamond Microwave Frequency (MHz). Bourgeois et al. Nat. Commun. 6 (5) M. Gulka et al. Phys. Rev. Applied 7 (7) 6

7 Detection of photoelectric signal from a single NV centre Photoluminescence and photoelectric mapping of a single NV centre in electronic grade diamond (~ 5 µm depth) Comparison between optical and photoelectric detection rates.x 7 5x 4 g () (τ) τ (ns) Photon autocorrelation function Optical image.5 µm Photoelectric rate ( s - ) 9.x 6 6.x 6.x 6. Photoluminescence I / ( + P / P) Photocurrent abp / (+ bp) Laser power (mw) 4x 4 x 4 x 4 x 4 Photoluminescence rate (s - ) Photoelectric imaging of a single NV centre Detection rates increased by a factor ~ compared to optical readout lectrical image.5 µm No saturation of photocurrent under high excitation power DC detection of PC after ultra-low noise amplification Laser : 5 nm, 9 mw. Objective N.A.:.95 Voltage: 8 V, inter-electrode distance: 5 µm P. Siyushev, M. Nesladek,. Bourgeois et al. Science 6 (9) 7

8 Photoelectric readout of a coherently driven single NV spin: detection of Rabi oscillations Pulsed detection scheme* Low frequency envelope ( Hz) Laser pulses (56 nm, ns) Microwave pulses Cts/s µm PC detection by lock-in amplification lectrode Reference lectrode 4 µm Cts/s Photoelectric detection of Rabi oscillations on a single NV centre 4 Optical Signal 4 Photocurrent contrast (%) Voltage: V Inter-electrode distance: 6 µm Photoelectric Signal Duration of microwave pulse (ns) Laser: 8 mw MW: 6 W Laser Resonant MW Initial. τ Photoluminescence contrast (%) Readout t (ns) Photoelectric readout of a coherently manipulated single NV electron spin has been achieved P. Siyushev, M. Nesladek,. Bourgeois et al. Science 6 (9) 8

9 Highlights Photoelectric detection of NV magnetic resonance (PDMR) based on two-photon ionization of NV Direct photoelectric readout of a coherently driven single NV spin, with photoelectric detection rate exceeding optical detection rate lectrically readout diamond quantum chips integrated with electronics Photoelectric imaging of a single NV centre.5 µm Photoelectric detection of Rabi oscillations on a single NV centre Photocurrent contrast (%) Photoelectric Signal Optical Signal Duration of microwave pulse (ns) Photoluminescence contrast (%)

10 Ionization of NV Origin of PDMR contrast CB CB CB Free electron ±> A ±> A A A ±> MW A A ±> lifetime: ~ ns NV NV NV VB VB VB Spin-selective transitions to the metastable state Temporary decrease in the occupation of NV ground state

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