On-Chip Quantum Nanophotonics: Challenges and Perspectives

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1 On-Chip Quantum Nanophotonics: Challenges and Perspectives Vladimir M. Shalaev Purdue Quantum Center, Purdue University West Lafayette, IN, USA

2 WHY QUANTUM PHOTONICS? Transformative impact: NEXT TECHNOLOGY REVOLUTION is going to be QUANTUM How many atoms per bit? ENIAC (1947) Pentium 4 (2002) number of atoms per bit ATOM PER BIT Pentium 4 ~ 2017 year atom FASTER + SMALLER -> Quantum PHOTONICS R. W. Keyes, IBM J. R&D 32, 26 (1988)

3 3 Modern quantum information processing Joint Quantum Institute Monroe & Kim groups (UMD & Duke)

4 4 Infrastructure for quantum information processing Memory/Qubit/Gate Information channel RT On-chip Photon Dielectric WG Yes Yes Superconductor Transmission line No Yes Single ion Free-space optics No No Single atom Free-space optics No No Quantum dot Dielectric WG No Yes Topological qubits Electric wire No Yes Color center Nanophotonic WG Yes Yes

5 5 Roadmap for an integrated quantum information system MATERIAL PLATFORM ELEMENTARY COMPONENTS waveguides, single-photon sources, detectors, etc. QUANTUM REGISTERS QUANTUM GATES QUANTUM CHANNELS INTEGRATION WITH CMOS QUANTUM INFORMATION SYSTEM ARCHITECTURE QUANTUM INFORMATION ALGORYTHMS ERROR CORRECTION

6 Outline Current material platforms for quantum photonics Hybrid material platforms for quantum nanophotonics: color centers with on demand properties combined with Transition metal nitrides Transparent conducting oxides Perspective quantum nanophotonic devices Plasmonics/MM-enhanced single photon sources Plasmonics/MM-enhanced quantum registers Integrated quantum information system Outlook for large scale integration

7 Currently pursued material platforms with a potential for on-chip quantum photonics

8 Elementary material platforms for integrated quantum photonics Si-based groups of O Brien, Thompson III-V groups of Skolnick, Fox, Lodahl Diamond groups of Lukin, Loncar, Jelezko Lithium Niobate group of S. Zhu, Sukhorukov Review: Bogdanov, Shalaginov, Boltasseva & Shalaev, OMEx (2017)

9 Si/SiO 2 /SOI Material system Photonic quantum processor SiO 2 on Si SOI doped SiO 2 buffer SiO 2 Politi et al., Science (2008) Bonneau et al., NJP (2012) (O Brien, Bristol) (O Brien, Bristol) Quantum interference of single-photon sources Silverstone et al., Nat. Photon. (2013) (O Brien, Bristol) Peruzzo et al., Nat. Comm. (2014) (O Brien, Bristol) Advantages of the material system Tight photon confinement Strong χ (3) Easy fabrication and integration with CMOS Drawbacks: TPA, no pump (indirect material), small FWM bandwidth -> difficult pump filtering 9

10 SiN x /SiO 2 Material system Low noise quantum frequency conversion Levy et al., Nat. Photon. (2009) ource of tunable narrowband (30MHz) entangled photons Agha et al., Opt. Exp. (2013) (Srinivasan, NIST MD) Advantages of the material system Ramelow et al., Arxiv. (2015) (Gaeta, Columbia) Strong χ (3) High operation bandwidth Lower TPA Low thermal expansion Drawbacks: NL-s are not as high as in Si, difficult to make reconfigurable circuits 10

11 Diamond/SiO 2 Material system Frequency comb generation diamond Hausmann et al., Nat. Photon. (2014) (Loncar, Harvard) On-chip Raman laser Aharonovich et al., Rep. Prog. Phys. (2011) (Prawer, Melbourne) Hausmann et al., Nat. Photon. (2015) (Loncar, Harvard) Advantages of the material system Main challenge: integration with electronics High transparency in telecom and visible Tight photon confinement Available color centers Main challenge: costly HPHT multistep procedure; difficult integration with electronics; scalabi 11

12 Applications of nitrogen-vacancy color centers Quantum sensing & metrology Quantum information Gates & Qubits Electric/Magnetic fields Jacques group Temperature Wractrup, Lukin, Hanson, Jelezko groups Single-photon channels Wrachtrup, Yacoby, Awschalom, Walsworth, Hanson, Lukin groups, Lukin, HC Chang groups Loncar & Englund groups

13 NV centers in nanodiamonds Reliable (but difficult) nanomanipulation nanodiamond precision < 100 nm Schell et al. Rev. Sci. Inst. (2011) AFM-based pick-and-place Long coherence time T 2 50 μs Dynamical decoupling 1 μm Knowles et al. Nat. Mat. (2014)

14 14 Diamond color centers Cr? GeV? 640 nm 740 nm 800 nm 750 nm 600nm Aharonovich et al, Rep. Prog. Phys. (2011) (Prawer, Melbourne) Aharonovich et al, PRB. (2010) (Prawer, Melbourne) Iwasaki et al, Sci. Rep. (2015) (Hatano, Tokyo) Integration into diamond photonic crystals Reproducible Li et al, Nat. Comm. (2014) (Englund, MIT)

15 15 Color centers for deterministic QIP RT entanglement of proximal NVs Color centers on demand 25 nm diamonoid molecule High P, high T growth fluorescent nanodiamond Re( ρ) Im( ρ) Make polymer Use as diamond seed to get near-deterministic array of NVs Dolde et al. Nat. Phys. (2013) (Wrachtrup, Stuttgart) Hemmer group, TAMU

16 16 SiC on Si Material system Color defects SiC/Si (C Si, V C ) Single-photon defects Lien et al., Cryst. Gr. & Des. (2010) (Maboudian, Berkeley) Boretti et al., Nat. Photon. (2014) (Melbourne) Casteletto et al., Nat. Mater. (2013) (Melbourne) Monolithic photonic fabrication Lee et al., APL (2015) (Lin, Rochester) Lu et al., Opt. Lett. (2013) (Lin, Rochester) Advantages of the material system Bright color centers (SPS with rate 2Mcps) Low optical losses High refractive index Can be p and n doped Difficult isolation of color defects; Spin coherence demonstrated only at low temperatures

17 Other material systems GaAs GaAs/SiON/SiO 2 Wang et al., Opt. Comm. (2014) (Thompson, Bristol) Murray et al., APL (2015) (Shields, Cambridge) QDs Challenges: non-uniform QDs, positioning, low-t operation, larger than in Si losses, difficult integration with electronics InP LN/PPLN Jin et al., PRL (2014) (Zhu, Nanjing) Sibson et al., Arxiv (2015) (Thompson, Bristol) 17