International Journal of Scientific & Engineering Research, Volume 4, Issue 6, June ISSN
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1 International Journal of Scientific & Engineering Research, Volume, Issue 6, June-3 67 ISSN Comparison of Performance of Impatt Diode For Various Materials Joydeep Sengupta, Dr. Monojit Mitra Assistant Professor, Electronics Engineering Department Visvesvaraya National Institute of Technology, Nagpur, India Associate Professor, Electronics & Telecommunication Engineering Department Bengal Engineering & Science University, Shibpur, West Bengal, India Abstract: In this paper the efficiency of the IMPATT diode is an important criterion. The efficiency varies with the semiconductor material used to design the IMPATT diode. The Efficiency plays an important role in the choice of material that should be used for a given applications. The efficiency of IMPATT diode for Si, GaAs, SiC, InP, GaN is measured and compared. Keyword: Efficiency, Electric field Distribution, space charge. Introduction: D.C analysis of the DDR structure was carried out by solving Poission s equation [A. Acharyya ()] including mobile space charge in the depletion layer of the diode. Poission s equation is given as, The conversion efficiency is calculated from the approximate formula Where, VD = Voltage drop across the drift region, VB = Breakdown voltage and m = multiplication factor. Avalanche breakdown occurs in the junction when the electric field is large enough such that the charge multiplication factors (Mn, Mp) become infinite. Again, the breakdown voltage is calculated by integrating the spatial field profile over the total depletion layer width, i.e., 3
2 International Journal of Scientific & Engineering Research, Volume, Issue 6, June-3 68 ISSN Doping Profile: A double drift p+pnn+ structure IMPATT have been designed by using computer simulation technique for operation at ka Band frequency by using the transit time formula of Sze and Ryder which is Wn,p =.37 vsn,sp / f; where Wn,p, vsn,sp and f are the total depletion layer width (n or pside), saturation velocity of electrons/holes and operating frequency respectively. Here n+ and p+-layers are highly doped substrates and n and p are epilayer Simulation: The simulation method starts with DC analysis described in details. In this method the computation starts from the field maximum near the metallurgical junction. The distribution of DC electric field and carrier currents in the depletion layer is obtained by the double-iterative computer method, which involves iteration over the magnitude of field maximum (Em) and its location in the depletion layer. A computer algorithm has been developed for simultaneous numerical solution of Poisson s equation, carrier continuity equations and the space charge equation taking into account the effect of mobile space charge and carrier diffusion in order to obtain the electric field profiles and carrier current profiles. The boundary conditions for the electric field at the depletion layer edges are given by, E(-x)= and E(x)= The Poission s equation is simulated using MATLAB. The flat doping profile is used in the simulation. The various material parameters used in the simulation are given in the table below. In the computer simulation of DC and small-signal behaviour of the Si DDR IMPATT diode, the following assumptions are made, viz., (i) one dimensional 3
3 International Journal of Scientific & Engineering Research, Volume, Issue 6, June-3 69 ISSN model of the p-n junction is treated (Fig. ); (ii) the electron and hole velocities are taken to be saturated and independent of the electric field throughout the space charge layer. Simulation Result: The stimulation result for various materials is shown in the table given below. Peak Efficiency Material m Vb Vd frequency (%) (GHz) Si GaAs InP C SiC Wz GaN x 7 Electric Field for Si 8 x 6 Electric Field for GaAs x x -6
4 International Journal of Scientific & Engineering Research, Volume, Issue 6, June-3 7 ISSN x 6 Electric Field for InP 6 x 7 Electric Field for SiC x x -6.5 x 7 Electric Field for GaN x -6 Conclusion: The efficiency for various materials were calculated and compared. It is seen that efficiency depends on value of m and electric field distribution. The efficiency of Silicon is the least. The 3C SiC and WzGaN show the maximum efficiency. The performance of the Impatt diode increases with the use of good semiconductor material. The performance increases but the cost of material also increases. Hence the choice of material depends on the application required. 3
5 International Journal of Scientific & Engineering Research, Volume, Issue 6, June-3 7 ISSN Reference: [] A.K.Panda,D.Pavlidis,and Alekseev DC and high frequency characteristics of GaN based IMPATTS IEEE Trans.Electron Devices,vol8pp 8-83,Apr. [] J.K.Mishra,A.K.PandaandG.N.Dash. An extreme low noise hetrojunction IMPATT IEEE Trans.Electron.Devices,vol pp3-9 Dec 997 [3] Joydeep Sengupta and Dr. Monojit Mitra Variation of Impedances in Impatt diode at High Frequencies IJECSE vol issue 6 pp 5-9 Oct 3
Heat Sink Design and Temperature Distribution Analysis for Millimeter Wave IMPATT Oscillators using Finite Difference Method
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