Photodetector Basics
|
|
- Lydia Malone
- 6 years ago
- Views:
Transcription
1 Photodetection: Absorption => Current Generation hυ Currents Materials for photodetection: t ti E g <h hν Various methods for generating currents with photo-generated carriers: photoconductors, photodiodes, avalanche photodiodes
2 Photon energy (ev) Ge In 0.7 Ga 0.3 As 0.64 P Sharp decrease in α In 0.53 Ga 0.47 As Si for λ>e g GaAs α (m -1 ) InP a-si:h - Photodetection t ti for indirect bandgap materials? Wavelength (μm)
3 - Photodetection for indirect bandgap materials? E E CB E c CB Indirect Bandgap, E g Direct Bandgap E g Photon E v Photon E c VB VB E v Phonon k k k k (a) GaAs (Direct bandgap) (b) Si (Indirect bandgap)
4 Photodetection efficiency R (Responsivity) = I P I q η (Quantum Efficiency) = P h ν q λμ [ m] R = η = η 0.3 hν Responsivity y( (A/W) Ideal Photodiode QE = 100% ( η = 1) Si Photodiode λ g Wavelength (nm)
5 Photoconductor Without light, w d Conductivity: σ = q μ n + q μ p ( μ : electron, hole mobility) eh, V J = σ E and I = wd σ e h n 0, p 0 With light, I + v - n= n +Δ n, p = p +Δp 0 0 σ +Δ σ = q μ ( n +Δ n ) + q μ ( p +Δ p ) e V V Δ I = wd Δσ = wd ( qμeδ n+ qμhδp) h 0
6 With light, n, p w d V Δ I = wdδ σ = wd qμeδ n+ qμhδp ( ) V + v - I P τ Since Δ n=δ p = ηint and assuming Δn, Δp are uniform, hν wd V P τ V P τ Δ I = wdδ σ = wd q( μe + μh) ηint = q( μe + μh) ηint V 2 hν wd hν ΔI q τ R = (assuming dark current is small) = ( μ e + μ h ) η int 2 P hν τ η = ( μe + μh) ηint = G η 2 int
7 h+ e Photoconductor I ph τ Gain: G = ( μe + μh) V 2 τ τ τ Assuming μe >> μh, G = μe V = = 2 2 τ e μ V τ e = = = ; time for travelling distance V μ e e μ E v τ >> τ e ==> electrons circulate many time before recombination e
8 d Photoconductors: I n, p + v - w - Very easy to make - arge gain - But slow (speed limited by τ) and significant dark currents
9 photodiode Faster, dark-current-free photodetectors? p n B - h + As + e PN junction in reverse bias -No significant current flow=> small dark currents E (x) W p M 0 W n x - Photo-generated carriers are removed by built-in field in depletion region (space charge region) E o
10 P N Photo-generated t carriers drift into P (holes) and N (electrons) regions creating currents. I = η int P q hν E (x) W p 0 W n x M p One photon creates electron and hole Problem: depletion region is very thin (< 1 μm) ) E o η int is very small. => >Use PIN structure t
11 SiO 2 Electrode p + Electrode (a) i-si n + ρ net en d (b) x PIN Photodiode en a E(x) (c) x E o W hυ > E g (d ) E h + e I ph R V out V r
12 CMOS Image Sensor
13 MSM (Metal-Semiconductor Metal) PD Carrier collection by lateral E-field provided by Schottky contacts Not very efficient but can be very fast
14 Avalanche Photodiode (APD): PIN PD + Gain (avalanche: a large mass of snow, ice, earth, rock, or other material in swift motion down a mountainside) id Achieve gain by multiplying electrons and/or holes. Impact Ionization: Under high E-field, electrons and holes can have sufficiently high kinetic energies breaking bonds and creating new e-h pairs. E E e h + E c e E v n + p Avalanche region š h +
15 In real APD, care is taken so that only one type of carrier (either electron or hole) causes impact ionization. APD has limited application for optical communication since high-performance EDFA is easily available APD is very useful for optical interconnect applications.
Photodetector. Prof. Woo-Young Choi. Silicon Photonics (2012/2) Photodetection: Absorption => Current Generation. Currents
Photodetection: Absorption => Current Generation h Currents Materials for photodetection: E g < h Various methods for generating currents with photo-generated carriers: photoconductors, photodiodes, avalanche
More informationLect. 10: Photodetectors
Photodetection: Absorption => Current Generation h Currents Materials for photodetection: E g < h Various methods for generating currents with photo-generated carriers: photoconductors, photodiodes, avalanche
More informationLecture 12. Semiconductor Detectors - Photodetectors
Lecture 12 Semiconductor Detectors - Photodetectors Principle of the pn junction photodiode Absorption coefficient and photodiode materials Properties of semiconductor detectors The pin photodiodes Avalanche
More informationChapter 4. Photodetectors
Chapter 4 Photodetectors Types of photodetectors: Photoconductos Photovoltaic Photodiodes Avalanche photodiodes (APDs) Resonant-cavity photodiodes MSM detectors In telecom we mainly use PINs and APDs.
More informationLEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
More informationPhotosynthesis & Solar Power Harvesting
Lecture 23 Semiconductor Detectors - Photodetectors Principle of the pn junction photodiode Absorption coefficient and photodiode materials Properties of semiconductor detectors The pin photodiodes Avalanche
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm
More informationPhotodetectors Read: Kasip, Chapter 5 Yariv, Chapter 11 Class Handout. ECE 162C Lecture #13 Prof. John Bowers
Photodetectors Read: Kasip, Chapter 5 Yariv, Chapter 11 Class Handout ECE 162C Lecture #13 Prof. John Bowers Definitions Quantum efficiency η: Ratio of the number of electrons collected to the number of
More informationECEN 5645 Introduc0on to Optoelectronics Class Mee0ng 25. Non- PIN Solid State Detectors
ECEN 5645 Introduc0on to Optoelectronics Class Mee0ng 25 Non- PIN Solid State Detectors Today s Topics Avalanche Photodiodes Problem 5.6 APD Numerics and Examples Heterojunc0on Detectors Problem 5.10 Quantum
More informationPhotonic Communications Engineering Lecture. Dr. Demetris Geddis Department of Engineering Norfolk State University
Photonic Communications Engineering Lecture Dr. Demetris Geddis Department of Engineering Norfolk State University Light Detectors How does this detector work? Image from visionweb.com Responds to range
More informationCourse overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy
Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one
More informationMTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor
More informationElectron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.
Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single
More informationSingle Photon detectors
Single Photon detectors Outline Motivation for single photon detection Semiconductor; general knowledge and important background Photon detectors: internal and external photoeffect Properties of semiconductor
More informationEE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More informationEE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors
EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification
More informationLecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination
Lecture 8 Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Reading: (Cont d) Notes and Anderson 2 sections 3.4-3.11 Energy Equilibrium Concept Consider a non-uniformly
More informationPhotodiodes and other semiconductor devices
Photodiodes and other semiconductor devices Chem 243 Winter 2017 What is a semiconductor? no e - Empty e levels Conduction Band a few e - Empty e levels Filled e levels Filled e levels lots of e - Empty
More informationLecture 15: Optoelectronic devices: Introduction
Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1
More informationAuxiliaire d enseignement Nicolas Ayotte
2012-02-15 GEL 4203 / GEL 7041 OPTOÉLECTRONIQUE Auxiliaire d enseignement Nicolas Ayotte GEL 4203 / GEL 7041 Optoélectronique VI PN JUNCTION The density of charge sign Fixed charge density remaining 2
More information1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
More information8 Photo detectors. 8.1 Detector characteristics Responsivity R
A photo detector is a device that converts the incident optical energy in a measurable signal, e.g., a voltage signal or an electric current. Photo detectors can be subdivided into two main classes: Photon
More information3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV
3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the
More informationSEMICONDUCTOR PHYSICS REVIEW BONDS,
SEMICONDUCTOR PHYSICS REVIEW BONDS, BANDS, EFFECTIVE MASS, DRIFT, DIFFUSION, GENERATION, RECOMBINATION February 3, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles
More informationChemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
More informationCarrier Recombination
Notes for ECE-606: Spring 013 Carrier Recombination Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu /19/13 1 carrier recombination-generation
More information3.1 Absorption and Transparency
3.1 Absorption and Transparency 3.1.1 Optical Devices (definitions) 3.1.2 Photon and Semiconductor Interactions 3.1.3 Photon Intensity 3.1.4 Absorption 3.1 Absorption and Transparency Objective 1: Recall
More informationPhys 4061 Lecture Thirteen Photodetectors
Phys 4061 Lecture Thirteen Photodetectors Recall properties of indirect band gap materials that are used as photodetectors Photoelectric Effect in Semiconductors hν > Eg + χ χ is the electron affinity
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationDirect and Indirect Semiconductor
Direct and Indirect Semiconductor Allowed values of energy can be plotted vs. the propagation constant, k. Since the periodicity of most lattices is different in various direction, the E-k diagram must
More informationELEC 4700 Assignment #2
ELEC 4700 Assignment #2 Question 1 (Kasop 4.2) Molecular Orbitals and Atomic Orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction
More informationLecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
More informationPHOTODETECTORS AND SILICON PHOTO MULTIPLIER
ESE seminar Photodetectors - Sipm, P. Jarron - F. Powolny 1 PHOTODETECTORS AND SILICON PHOTO MULTIPLIER ESE seminar Pierre Jarron, Francois Powolny OUTLINE 2 Brief history and overview of photodetectors
More informationLaser Basics. What happens when light (or photon) interact with a matter? Assume photon energy is compatible with energy transition levels.
What happens when light (or photon) interact with a matter? Assume photon energy is compatible with energy transition levels. Electron energy levels in an hydrogen atom n=5 n=4 - + n=3 n=2 13.6 = [ev]
More information- A free electron in CB "meets" a hole in VB: the excess energy -> a photon energy.
5.4. Recombination and Minority Carrier Injection 5.4.1 Direct and Indirect Recombination A free electron in CB "meets" a hole in VB: the excess energy > a photon energy. Energy CB ψ cb (k cb ) ψ vb (k
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence
More informationSensor Technology. Summer School: Advanced Microsystems Technologies for Sensor Applications
Sensor Technology Summer School: Universidade Federal do Rio Grande do Sul (UFRGS) Porto Alegre, Brazil July 12 th 31 st, 2009 1 Outline of the Lecture: Philosophy of Sensing Instrumentation and Systems
More informationChapter 1 Overview of Semiconductor Materials and Physics
Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B
More informationLecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
More informationSchottky Diodes (M-S Contacts)
Schottky Diodes (M-S Contacts) Three MITs of the Day Band diagrams for ohmic and rectifying Schottky contacts Similarity to and difference from bipolar junctions on electrostatic and IV characteristics.
More informationTheory of Electrical Characterization of Semiconductors
Theory of Electrical Characterization of Semiconductors P. Stallinga Universidade do Algarve U.C.E.H. A.D.E.E.C. OptoElectronics SELOA Summer School May 2000, Bologna (It) Overview Devices: bulk Schottky
More informationSemiconductor Fundamentals. Professor Chee Hing Tan
Semiconductor Fundamentals Professor Chee Hing Tan c.h.tan@sheffield.ac.uk Why use semiconductor? Microprocessor Transistors are used in logic circuits that are compact, low power consumption and affordable.
More informationSample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013
Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance
More informationMetal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour
Metal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour (Cu) All operate by vaporizing metal in container Helium
More informationCarriers Concentration and Current in Semiconductors
Carriers Concentration and Current in Semiconductors Carrier Transport Two driving forces for carrier transport: electric field and spatial variation of the carrier concentration. Both driving forces lead
More informationThe pn junction. [Fonstad, Ghione]
The pn junction [Fonstad, Ghione] Band diagram On the vertical axis: potential energy of the electrons On the horizontal axis: now there is nothing: later we ll put the position qf s : work function (F
More informationSemiconductor-Detectors
Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor
More informationUNIT I: Electronic Materials.
SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: SEMICONDUCTOR PHYSICS (18HS0851) Course & Branch: B.Tech
More information(b) Spontaneous emission. Absorption, spontaneous (random photon) emission and stimulated emission.
Lecture 10 Stimulated Emission Devices Lasers Stimulated emission and light amplification Einstein coefficients Optical fiber amplifiers Gas laser and He-Ne Laser The output spectrum of a gas laser Laser
More informationLecture 18. New gas detectors Solid state trackers
Lecture 18 New gas detectors Solid state trackers Time projection Chamber Full 3-D track reconstruction x-y from wires and segmented cathode of MWPC z from drift time de/dx information (extra) Drift over
More informationCOURSE OUTLINE. Introduction Signals and Noise Filtering Sensors: PD5 Avalanche PhotoDiodes. Sensors, Signals and Noise 1
Sensors, Signals and Noise 1 COURSE OUTLINE Introduction Signals and Noise Filtering Sensors: PD5 Avalanche PhotoDiodes Avalanche Photo-Diodes (APD) 2 Impact ionization in semiconductors Linear amplification
More informationSolar cells operation
Solar cells operation photovoltaic effect light and dark V characteristics effect of intensity effect of temperature efficiency efficency losses reflection recombination carrier collection and quantum
More informationPurpose: To convert the received optical signal into an electrical lsignal.
OPTICAL DETECTORS Optical Detectors Purpose: To convert the received optical signal into an electrical lsignal. Requirements For Detector HIGH SENSITIVITY (at operating wave lengths) at normal op. temp
More informationEE 472 Solutions to some chapter 4 problems
EE 472 Solutions to some chapter 4 problems 4.4. Erbium doped fiber amplifier An EDFA is pumped at 1480 nm. N1 and N2 are the concentrations of Er 3+ at the levels E 1 and E 2 respectively as shown in
More informationB12: Semiconductor Devices
B12: Semiconductor Devices Example Sheet 2: Solutions Question 1 To get from eq. (5.70) of the notes to the expression given in the examples sheet, we simply invoke the relations n 0 p 0, n 0 n 0. In this
More informationBasic Principles of Light Emission in Semiconductors
Basic Principles of Light Emission in Semiconductors Class: Integrated Photonic Devices Time: Fri. 8:00am ~ 11:00am. Classroom: 資電 06 Lecturer: Prof. 李明昌 (Ming-Chang Lee) Model for Light Generation and
More informationENERGY BANDS AND GAPS IN SEMICONDUCTOR. Muhammad Hafeez Javed
ENERGY BANDS AND GAPS IN SEMICONDUCTOR Muhammad Hafeez Javed www.rmhjaved.com rmhjaved@gmail.com Out Line Introduction Energy band Classification of materials Direct and indirect band gap of SC Classification
More informationSemiconductor device structures are traditionally divided into homojunction devices
0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting
More informationBasic cell design. Si cell
Basic cell design Si cell 1 Concepts needed to describe photovoltaic device 1. energy bands in semiconductors: from bonds to bands 2. free carriers: holes and electrons, doping 3. electron and hole current:
More informationFundamentals of Photovoltaics: C1 Problems. R.Treharne, K. Durose, J. Major, T. Veal, V.
Fundamentals of Photovoltaics: C1 Problems R.Treharne, K. Durose, J. Major, T. Veal, V. Dhanak @cdtpv November 3, 2015 These problems will be highly relevant to the exam that you will sit very shortly.
More informationLecture Notes 2 Charge-Coupled Devices (CCDs) Part I. Basic CCD Operation CCD Image Sensor Architectures Static and Dynamic Analysis
Lecture Notes 2 Charge-Coupled Devices (CCDs) Part I Basic CCD Operation CCD Image Sensor Architectures Static and Dynamic Analysis Charge Well Capacity Buried channel CCD Transfer Efficiency Readout Speed
More informationSession 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation
Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur
More informationSession 6: Solid State Physics. Diode
Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between
More information!"#$%&'()%*&+,-.&*&',/"*"%*&+0!
"#$%&'()%*&+-.&*&'/"*"%*&+0 1.23*"+45"#$%&'()%*&+-.&*&'/"*"%*&+0 "#$"%&'(')*(*+('-.$ /0(*12321)41(*123%&'('*5*+(- 6$ 7*1*23%'8*9*- "#$:%&'('+'1);+('-.$ 41(
More informationPHOTOVOLTAICS Fundamentals
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
More informationSolid State Physics SEMICONDUCTORS - IV. Lecture 25. A.H. Harker. Physics and Astronomy UCL
Solid State Physics SEMICONDUCTORS - IV Lecture 25 A.H. Harker Physics and Astronomy UCL 9.9 Carrier diffusion and recombination Suppose we have a p-type semiconductor, i.e. n h >> n e. (1) Create a local
More informationStimulated Emission Devices: LASERS
Stimulated Emission Devices: LASERS 1. Stimulated Emission and Photon Amplification E 2 E 2 E 2 hυ hυ hυ In hυ Out hυ E 1 E 1 E 1 (a) Absorption (b) Spontaneous emission (c) Stimulated emission The Principle
More informationOutline. Photosensors in biology and in semiconductors. The visual pathway Bottom view. The visual pathway Side view
Outline Photosensors in biology and in semiconductors CNS WS07-08 Class 1 Photosensors in biology The visual pathway and the retina Photoreceptors and the fovea Giacomo Indiveri Institute of Neuroinformatics
More informationEECS143 Microfabrication Technology
EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g
More informationECE 250 Electronic Devices 1. Electronic Device Modeling
ECE 250 Electronic Devices 1 ECE 250 Electronic Device Modeling ECE 250 Electronic Devices 2 Introduction to Semiconductor Physics You should really take a semiconductor device physics course. We can only
More informationDesigning Information Devices and Systems II A. Sahai, J. Roychowdhury, K. Pister Discussion 1A
EECS 16B Spring 2019 Designing Information Devices and Systems II A. Sahai, J. Roychowdhury, K. Pister Discussion 1A 1 Semiconductor Physics Generally, semiconductors are crystalline solids bonded into
More informationExternal (differential) quantum efficiency Number of additional photons emitted / number of additional electrons injected
Semiconductor Lasers Comparison with LEDs The light emitted by a laser is generally more directional, more intense and has a narrower frequency distribution than light from an LED. The external efficiency
More informationTemperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths
04 (51)-AF:Modelo-AF 8/20/11 6:37 AM Page 107 Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths Michelly de Souza 1, Olivier
More informationChapter 7. Solar Cell
Chapter 7 Solar Cell 7.0 Introduction Solar cells are useful for both space and terrestrial application. Solar cells furnish the long duration power supply for satellites. It converts sunlight directly
More informationSemiconductor Physics and Devices Chapter 3.
Introduction to the Quantum Theory of Solids We applied quantum mechanics and Schrödinger s equation to determine the behavior of electrons in a potential. Important findings Semiconductor Physics and
More informationUNIT - IV SEMICONDUCTORS AND MAGNETIC MATERIALS
1. What is intrinsic If a semiconductor is sufficiently pure, then it is known as intrinsic semiconductor. ex:: pure Ge, pure Si 2. Mention the expression for intrinsic carrier concentration of intrinsic
More informationEngineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1
Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we
More informationUniform excitation: applied field and optical generation. Non-uniform doping/excitation: diffusion, continuity
6.012 - Electronic Devices and Circuits Lecture 2 - Uniform Excitation; Non-uniform conditions Announcements Review Carrier concentrations in TE given the doping level What happens above and below room
More informationFall 2014 Nobby Kobayashi (Based on the notes by E.D.H Green and E.L Allen, SJSU) 1.0 Learning Objectives
University of California at Santa Cruz Electrical Engineering Department EE-145L: Properties of Materials Laboratory Lab 7: Optical Absorption, Photoluminescence Fall 2014 Nobby Kobayashi (Based on the
More informationSchottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
More informationStructural Optimization of Silicon Carbide PIN Avalanche Photodiodes for UV Detection
Journal of the Korean Physical Society, Vol. 56, No. 2, February 2010, pp. 672 676 Structural Optimization of Silicon Carbide PIN Avalanche Photodiodes for UV Detection Ho-Young Cha School of Electronic
More informationSupporting Information. InGaAs Nanomembrane/Si van der Waals Heterojunction. Photodiodes with Broadband and High Photoresponsivity
Supporting Information InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity Doo-Seung Um, Youngsu Lee, Seongdong Lim, Jonghwa Park, Wen-Chun Yen, Yu-Lun
More informationLecture 4 - Carrier generation and recombination. February 12, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 4-1 Contents: Lecture 4 - Carrier generation and recombination 1. G&R mechanisms February 12, 2007 2. Thermal equilibrium: principle
More informationStudying of the Dipole Characteristic of THz from Photoconductors
PIERS ONLINE, VOL. 4, NO. 3, 8 386 Studying of the Dipole Characteristic of THz from Photoconductors Hong Liu, Weili Ji, and Wei Shi School of Automation and Information Engineering, Xi an University of
More informationcollisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature
1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of
More informationElectronic Devices & Circuits
Electronic Devices & Circuits For Electronics & Communication Engineering By www.thegateacademy.com Syllabus Syllabus for Electronic Devices Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport,
More informationEE 446/646 Photovoltaic Devices I. Y. Baghzouz
EE 446/646 Photovoltaic Devices I Y. Baghzouz What is Photovoltaics? First used in about 1890, the word has two parts: photo, derived from the Greek word for light, volt, relating to electricity pioneer
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More informationEffective masses in semiconductors
Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse
More informationAn Ensemble Monte Carlo Model to Calculate Photocurrent of MSM Photodetector
www.ijcsi.org 319 An Ensemble Monte Carlo Model to Calculate Photocurrent of MSM Photodetector M. Soroosh 1 and Y. Amiri 2 1 Department of Electrical and Computer Engineering, Shahid Chamran University,
More informationChapter 5. Semiconductor Laser
Chapter 5 Semiconductor Laser 5.0 Introduction Laser is an acronym for light amplification by stimulated emission of radiation. Albert Einstein in 1917 showed that the process of stimulated emission must
More informationPaper Review. Special Topics in Optical Engineering II (15/1) Minkyu Kim. IEEE Journal of Quantum Electronics, Feb 1985
Paper Review IEEE Journal of Quantum Electronics, Feb 1985 Contents Semiconductor laser review High speed semiconductor laser Parasitic elements limitations Intermodulation products Intensity noise Large
More informationp-n junction biasing, p-n I-V characteristics, p-n currents Norlaili Mohd. Noh EEE /09
CLASS 6&7 p-n junction biasing, p-n I-V characteristics, p-n currents 1 p-n junction biasing Unbiased p-n junction: the potential barrier is 0.7 V for Si and 0.3 V for Ge. Nett current across the p-n junction
More informationAstronomical Observing Techniques 2017 Lecture 9: Silicon Eyes 1
Astronomical Observing Techniques 2017 Lecture 9: Silicon Eyes 1 Christoph U. Keller keller@strw.leidenuniv.nl Content 1. Detector Types 2. Crystal La>ces 3. Electronic Bands 4. Fermi Energy and Fermi
More informationPhotodetectors and their Spectral Ranges
Photodetectors and their Spectral Ranges SINGLE ELEMENT IMAGE - photoemission devices vacuum photodiode pickup tubes (or external gas photodiode image intensifiers photoelectric devices) photomultiplier
More informationPhotovoltaic cell and module physics and technology. Vitezslav Benda, Prof Czech Technical University in Prague
Photovoltaic cell and module physics and technology Vitezslav Benda, Prof Czech Technical University in Prague benda@fel.cvut.cz www.fel.cvut.cz 1 Outlines Photovoltaic Effect Photovoltaic cell structure
More informationAppendix 1: List of symbols
Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination
More informationIntroduction. Katarzyna Skorupska. Silicon will be used as the model material however presented knowledge applies to other semiconducting materials
Introduction Katarzyna Skorupska Silicon will be used as the model material however presented knowledge applies to other semiconducting materials 2 June 26 Intrinsic and Doped Semiconductors 3 July 3 Optical
More informationSEMICONDUCTOR PHYSICS
SEMICONDUCTOR PHYSICS by Dibyendu Chowdhury Semiconductors The materials whose electrical conductivity lies between those of conductors and insulators, are known as semiconductors. Silicon Germanium Cadmium
More information