VERSION 4.0. Nanostructure semiconductor quantum simulation software for scientists and engineers.
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1 VERSION 4.0 Heterostructure Design Studio Nanostructure semiconductor quantum simulation software for scientists and engineers
2 Product description Heterostructure Design Studio Nowadays nanomaterials play an increasingly important role in modern technology. Artificially designed semiconductor heterostructures are basic material for electronic devices such as semiconductor lasers, photodetectors, field effect transistors etc. Computer Aided Design systems help in developing new devices predicting devices properties that decreases costs of devices design. The HETEROSTRUCTURE DESIGN STUDIO is state-of-the-art quantum simulation CAD system developed for semiconductor heterostructure engineering. The HETEROSTRUCTURE DESIGN STUDIO performs calculations of energy levels positions, corresponding wave functions and dispersion of confinement states in semiconductor heterostructures, dipole moments, momentum matrix elements, optical gain and optical absorption. The HETEROSTRUCTURE DESIGN STUDIO was designed for scientists and engineers and was tested in NASA laboratories. Both scientists and engineers will find the HETEROSTRUCTURE DESIGN STUDIO to be an indispensable tool for heterostructure modeling, fast and convenient calculations of heterostructure properties, numerical theoretical study of novel structures.
3 Applications of Heterostructure Design Studio Optoelectronic device engineering Design of optoelectronics devices requires costly preparation of samples to get desired properties. The Heterostructure Design Studio allows predicting device properties by doing simulation. The calculations of wave functions, momentum matrix elements, optical gain etc with different input parameters of heterostructure provides the necessary information about device properties and its behavior under different external conditions that decreases the device design time and costs. Engineers involving in designing of semiconductor heterostructure devices will find the Heterostructure Design Studio an extremely helpful tool. Theoretical studies of novel heterostructures in research labs and universities The Heterostructure Design Studio provides scientists with precise and accurate calculations during all steps of heterostructure simulation. Knowledge of bandstructure calculated according to precise model and optical properties allows to work not only with novel structures but also to find hidden features properties in already known structures. Both scientists doing theoretical and experimental research will find the Heterostructure Design Studio an indispensable tool for their work. Quantum mechanics training in semiconductor heterostructure studies at universities Semiconductor heterostructures are subjects of study at quantum mechanics university courses. The base of courses is the theory of band structure and wave functions. Due to extremely complicated formulas, which include eigenvalue and eigenfunction problem of differential equations system, it is impossible to get a result in analytical expressions. The Heterostructure Design Studio can be a working tool in solving exercises for the chapters in textbooks related to theory of heterostructures. Use of Heterostructure Design Studio provides students with both deep understanding of theory and practice in heterostructure calculations.
4 Key features and benefits User friendly interface Easy to learn Windows based user interface Build-in heterostructure layers and grid editor Build-in material database with convenient access to parameters. Parameters used in calculations of well-known materials are placed in database Powerful graphical plotting tools A 3 B 5 semiconductors The software allows working with all A 3 B 5 semiconductors and their ternary and quaternary alloys with zinc-blend crystal structure as layer and substrate materials. Any new material can be added. Multi-band k p selfconsistent calculations Calculations are based on finite-difference selfconsistent multi-band k p method with symmetrized boundary conditions. Matrix part of calculations is done by using LAPACK library. The following models are included: Kane eight-band model Luttinger-Kohn valence six-band model Luttinger-Kohn valence six-band with conduction band model Luttinger-Kohn valence four-band model Luttinger-Kohn valence four-band with conduction band model Effective mass conduction band model Main calculations parameters Temperature External DC electric field External uniaxial stress Quantum well and superlattice boundary conditions Self-consistent calculations mode Axial approximation Switch on/off the Hamiltonian terms Spurious solution elimination Spurious solutions elimination mode for eightband model
5 Optical transition calculations Calculations of: momentum matrix elements, dipole moments. Optical absorption and gain calculations Calculations of optical absorption and gain in heterostructure medium Bulk material band structure simulation Calculations of bulk semiconductor band structure Data export Fast and convenient export of data to: Origin scientific software Microsoft Excel Text file Graphic file Clipboard Parallel mode Use of several threads (processors) in calculations System requirements IBM PC compatible computer 512 MB of RAM or higher 100 MB of available disk space Microsoft Windows 7 or later Connection to the Internet
6 Simulation samples Envelope wave functions Valence and conduction band potentials with envelope wave functions of AlSb/InAs/Al 0.9 Ga 0.1 Sb/ Al 0.2 Ga 0.8 Sb/AlSb double quantum well structure calculated from eight-band k p theory. Self-consistent valence and conduction band potentials with envelope wave functions of AlSb/InAs/AlSb quantum well structure calculated from eight-band k p theory. Heavily doping leads to type II type I transition due to the strong valence band bending. Dispersion Hole subband dispersion in p-type GaAs/Al 0.5 Ga 0.5 As single heterojunction under applied in-plane uniaxial compression along [110] direction.
7 Calculated bulk dispersion of InAs biaxially stressed to AlSb substrate. Dispersion is plotted both for real and imaginary part of wave vector along z-direction. The real part of dispersion curve is plotted. Momentum matrix elements Squared momentum matrix elements for z-polarized light for InP/In 0.53 Ga 0.47 As/InP quantum well. Squared momentum matrix elements for z-polarized light for InP/In 0.68 Ga 0.32 As/InP compressively strained quantum well.
8 Optical absorption and gain Optical gain in 140Å Al 0.45 Ga 0.55 As/GaAs 0.84 P 0.16 /Al 0.45 Ga 0.55 As quantum well laser with cm -2 concentration of injected electrons and holes at room temperature. Intersubband optical absorption in 150Å AlSb/InAs/AlSb heterostructure with electron sheet concentration of cm -2 at 4.2K. Contacts To purchase or get evaluation login contact us: sales@optronicsdesign.com URL:
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