Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer

Size: px
Start display at page:

Download "Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer"

Transcription

1 Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer

2 Contents Preface 1. Classification of Solids and Crystal Structure Introduction The Bravais Lattice The Crystal Structure Miller Indices and Crystal Planes The Reciprocal Lattice and Brillouin Zone Types of Crystal Bindings Defects in a Crystalline Solid 18 Problems 23 Bibliography Lattice Dynamics Introduction The One-Dimensional Linear Chain Dispersion Relation for a Three-Dimensional Lattice The Concept of Phonons The Density of States and Lattice Spectrum Lattice Specific Heat 39 Problems 42 References 44 Bibliography Semiconductor Statistics Introduction Maxwell Boltzmann Statistics Fermi Dirac Statistics Bose Einstein Statistics Statistics for the Shallow-Impurity States in a Semiconductor 57 ix

3 x Contents Problems 59 Bibliography Energy Band Theory Introduction Basic Quantum Concepts and Wave Mechanics The Bloch Floquet Theorem The Kronig Penney Model The Nearly Free Electron Approximation The Tight-Binding Approximation Energy Band Structures for Some Semiconductors The Effective Mass Concept for Electrons and Holes Energy Band Structures and Density of States for Low-Dimensional Systems 96 Problems 101 References 103 Bibliography Equilibrium Properties of Semiconductors Introduction Densities of Electrons and Holes in a Semiconductor Intrinsic Semiconductors Extrinsic Semiconductors lonization Energies of Shallow- and Deep-Level Impurities Hall Effect, Electrical Conductivity, and Hall Mobility Heavy Doping Effects in a Degenerate Semiconductor 128 Problems 130 References 132 Bibliography Excess Carrier Phenomenon in Semiconductors Introduction Nonradiative Recombination: The Shockley Read Hall Model Band-to-Band Radiative Recombination Band-to-Band Auger Recombination Basic Semiconductor Equations The Charge-Neutrality Equation The Haynes Shockley Experiment The Photoconductivity Decay Experiment Surface States and Surface Recombination Velocity Deep-Level Transient Spectroscopy Technique Surface Photovoltage Technique 165 Problems 169 References 170 Bibliography 170

4 Contents xi 7. Transport Properties of Semiconductors Introduction Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects Boltzmann Transport Equation Derivation of Transport Coefficients for n-type Semiconductors Transport Coefficients for the Mixed Conduction Case Transport Coefficients for Some Semiconductors 198 Problems 208 References 209 Bibliography Scattering Mechanisms and Carrier Mobilities in Semiconductors Introduction Differential Scattering Cross-Section Ionized Impurity Scattering Neutral Impurity Scattering Acoustical Phonon Scattering Optical Phonon Scattering Scattering by Dislocations Electron and Hole Mobilities in Semiconductors Hot-Electron Effects in a Semiconductor 239 Problems 243 References 244 Bibliography Optical Properties and Photoelectric Effects Introduction Optical Constants of a Solid Free-Carrier Absorption Process Fundamental Absorption Process The Photoconductivity Effect The Photovoltaic (Dember) Effect The Photomagnetoelectric Effect 277 Problems 281 References 283 Bibliography Metal-Semiconductor Contacts Introduction Metal Work Function and Schottky Effect Thermionic Emission Theory Ideal Schottky Contact Current Flow in a Schottky Diode 295

5 xii Contents 10.6 Current Voltage Characteristics of a Silicon and a GaAs Schottky Diode Determination of Schottky Barrier Height Enhancement of Effective Barrier Height Applications of Schottky Diodes Ohmic Contacts in Semiconductors 324 Problems 330 References 332 Bibliography p-n Junction Diodes Introduction Equilibrium Properties of a p-n Junction Diode p-n Junction Diode Under Bias Conditions Minority Carrier Distribution and Current Flow Diffusion Capacitance and Conductance Minority Carrier Storage and Transient Behavior Zener and Avalanche Breakdowns Tunnel Diodes p-n Heterojunction Diodes Junction Field-Effect Transistors 371 Problems 377 References 380 Bibliography Solar Cells and Photodetectors Introduction Photovoltaic Devices (Solar Cells) Photodetectors 417 Problems 454 References 456 Bibliography Light-Emitting Devices Introduction Device Physics, Structures, and Characteristics of LEDs LED Materials and Technologies Principles of Semiconductor LDs Laser Diode (LD) Materials and Technologies 493 Problems 509 References 511 Bibliography 512

6 Contents xiii 14. Bipolar Junction Transistors Introduction Basic Device Structures and Modes of Operation Current Voltage Characteristics Current Gain, Base Transport Factor, and Emitter Injection Efficiency Modeling of a Bipolar Junction Transistor Switching and Frequency Response Advanced Bipolar Junction Transistors Thyristors Heterojunction Bipolar Transistors 548 Problems 562 References 565 Bibliography Metal-Oxide-Semiconductor Field-Effect Transistors Introduction An Ideal Metal-Oxide-Semiconductor System Oxide Charges and Interface Traps MOS Field-Effect Transistors SOI MOSBETS Charge-Coupled Devices 601 Problems 609 References 610 Bibliography High-Speed III-V Semiconductor Devices Introduction Metal Semiconductor Field-Effect Transistors High Electron Mobility Transistors Hot-Electron Transistors Resonant Tunneling Devices Transferred-Electron Devices 653 Problems 659 References 660 Bibliography 661 Solutions to Selected Problems 664 Appendix 687 Index 689

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures Sheng S. Li Department of Electrical and Computer Engineering University of Florida Gainesville,

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics MICRODEVICES Physics and Fabrication Technologies Series Editors: Ivor Brodie and Julius J. Murayt SRI International Menlo Park, California ELECTRON AND ION OPTICS Miklos

More information

Electronic and Optoelectronic Properties of Semiconductor Structures

Electronic and Optoelectronic Properties of Semiconductor Structures Electronic and Optoelectronic Properties of Semiconductor Structures Jasprit Singh University of Michigan, Ann Arbor CAMBRIDGE UNIVERSITY PRESS CONTENTS PREFACE INTRODUCTION xiii xiv 1.1 SURVEY OF ADVANCES

More information

EE 3329 Electronic Devices Syllabus ( Extended Play )

EE 3329 Electronic Devices Syllabus ( Extended Play ) EE 3329 - Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices

More information

The Physics of Semiconductors

The Physics of Semiconductors The Physics of Semiconductors with applications to optoelectronic devices KEVIN F. BRENNAN CAMBRIDGE UNIVERSITY PRESS Contents Preface page xi Chapter1 Basic Concepts in Quantum Mechanics 1.1 Introduction

More information

SOLID STATE PHYSICS. Second Edition. John Wiley & Sons. J. R. Hook H. E. Hall. Department of Physics, University of Manchester

SOLID STATE PHYSICS. Second Edition. John Wiley & Sons. J. R. Hook H. E. Hall. Department of Physics, University of Manchester SOLID STATE PHYSICS Second Edition J. R. Hook H. E. Hall Department of Physics, University of Manchester John Wiley & Sons CHICHESTER NEW YORK BRISBANE TORONTO SINGAPORE Contents Flow diagram Inside front

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

CONTENTS. vii. CHAPTER 2 Operators 15

CONTENTS. vii. CHAPTER 2 Operators 15 CHAPTER 1 Why Quantum Mechanics? 1 1.1 Newtonian Mechanics and Classical Electromagnetism 1 (a) Newtonian Mechanics 1 (b) Electromagnetism 2 1.2 Black Body Radiation 3 1.3 The Heat Capacity of Solids and

More information

Appendix 1: List of symbols

Appendix 1: List of symbols Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination

More information

Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p.

Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p. Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p. 2 The relaxation-time approximation p. 3 The failure of the Drude model

More information

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES Jasprit Singh University of Michigan McGraw-Hill, Inc. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal

More information

ET3034TUx Utilization of band gap energy

ET3034TUx Utilization of band gap energy ET3034TUx - 3.3.1 - Utilization of band gap energy In the last two weeks we have discussed the working principle of a solar cell and the external parameters that define the performance of a solar cell.

More information

Semiconductor Module

Semiconductor Module Semiconductor Module Optics Seminar July 18, 2018 Yosuke Mizuyama, Ph.D. COMSOL, Inc. The COMSOL Product Suite Governing Equations Semiconductor Schrödinger Equation Semiconductor Optoelectronics, FD Semiconductor

More information

Nature of Lesson (Lecture/Tutorial) H3 WK No. Day/ Date. Remarks. Duration. 4.00pm 6.30pm ALL. 2.5 hours. Introduction to Semiconductors Lecture 01

Nature of Lesson (Lecture/Tutorial) H3 WK No. Day/ Date. Remarks. Duration. 4.00pm 6.30pm ALL. 2.5 hours. Introduction to Semiconductors Lecture 01 JANUARY 2018 INTAKE Subject : Semiconductor Physics & Devices Venue : HCI Schedule : Mondays for Tutorial (3pm 5pm / 5pm 7pm) or Tuesdays for Tutorial (3pm 5pm / 5pm 7pm) and Thursdays for Lecture (4pm-6.30

More information

Index. buried oxide 35, 44 51, 89, 238 buried channel 56

Index. buried oxide 35, 44 51, 89, 238 buried channel 56 Index A acceptor 275 accumulation layer 35, 45, 57 activation energy 157 Auger electron spectroscopy (AES) 90 anode 44, 46, 55 9, 64, 182 anode current 45, 49, 65, 77, 106, 128 anode voltage 45, 52, 65,

More information

Schottky Rectifiers Zheng Yang (ERF 3017,

Schottky Rectifiers Zheng Yang (ERF 3017, ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function

More information

3. Two-dimensional systems

3. Two-dimensional systems 3. Two-dimensional systems Image from IBM-Almaden 1 Introduction Type I: natural layered structures, e.g., graphite (with C nanostructures) Type II: artificial structures, heterojunctions Great technological

More information

Solid Surfaces, Interfaces and Thin Films

Solid Surfaces, Interfaces and Thin Films Hans Lüth Solid Surfaces, Interfaces and Thin Films Fifth Edition With 427 Figures.2e Springer Contents 1 Surface and Interface Physics: Its Definition and Importance... 1 Panel I: Ultrahigh Vacuum (UHV)

More information

1.9.5 Stoichiometry, Nonstoichiometry, and Defect Structures 75

1.9.5 Stoichiometry, Nonstoichiometry, and Defect Structures 75 Chapter 1 Elementary Materials Science Concepts 3 1.1 Atomic Structure and Atomic Number 3 1.2 Atomic Mass and Mole 8 1.3 Bonding and Types of Solids 9 1.3.1 Molecules and General Bonding Principles 9

More information

MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont

MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont MODERN PHYSICS Frank J. Blatt Professor of Physics, University of Vermont McGRAW-HILL, INC. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal New Delhi

More information

Metal Semiconductor Contacts

Metal Semiconductor Contacts Metal Semiconductor Contacts The investigation of rectification in metal-semiconductor contacts was first described by Braun [33-35], who discovered in 1874 the asymmetric nature of electrical conduction

More information

Semiconductor device structures are traditionally divided into homojunction devices

Semiconductor device structures are traditionally divided into homojunction devices 0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation

More information

Electronic Properties of Materials An Introduction for Engineers

Electronic Properties of Materials An Introduction for Engineers Rolf E. Hummel Electronic Properties of Materials An Introduction for Engineers With 219 Illustrations Springer-Verlag Berlin Heidelberg New York Tokyo Contents PARTI Fundamentals of Electron Theory CHAPTER

More information

Effective masses in semiconductors

Effective masses in semiconductors Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping Avalanche breakdown Impact ionization causes an avalanche of current Occurs at low doping Zener tunneling Electrons tunnel from valence band to conduction band Occurs at high doping Tunneling wave decays

More information

Chapter 7. The pn Junction

Chapter 7. The pn Junction Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting

More information

Basic Semiconductor Physics

Basic Semiconductor Physics Chihiro Hamaguchi Basic Semiconductor Physics With 177 Figures and 25 Tables Springer 1. Energy Band Structures of Semiconductors 1 1.1 Free-Electron Model 1 1.2 Bloch Theorem 3 1.3 Nearly Free Electron

More information

Conductivity and Semi-Conductors

Conductivity and Semi-Conductors Conductivity and Semi-Conductors J = current density = I/A E = Electric field intensity = V/l where l is the distance between two points Metals: Semiconductors: Many Polymers and Glasses 1 Electrical Conduction

More information

Session 6: Solid State Physics. Diode

Session 6: Solid State Physics. Diode Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

More information

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur

More information

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)

More information

Fundamentals of Semiconductor Physics

Fundamentals of Semiconductor Physics Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap , MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor

More information

smal band gap Saturday, April 9, 2011

smal band gap Saturday, April 9, 2011 small band gap upper (conduction) band empty small gap valence band filled 2s 2p 2s 2p hybrid (s+p)band 2p no gap 2s (depend on the crystallographic orientation) extrinsic semiconductor semi-metal electron

More information

8.1 Drift diffusion model

8.1 Drift diffusion model 8.1 Drift diffusion model Advanced theory 1 Basic Semiconductor Equations The fundamentals of semiconductor physic are well described by tools of quantum mechanic. This point of view gives us a model of

More information

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor

ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back

More information

Solid State Electronics. Final Examination

Solid State Electronics. Final Examination The University of Toledo EECS:4400/5400/7400 Solid State Electronic Section elssf08fs.fm - 1 Solid State Electronics Final Examination Problems Points 1. 1. 14 3. 14 Total 40 Was the exam fair? yes no

More information

Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy

Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one

More information

Schottky Diodes (M-S Contacts)

Schottky Diodes (M-S Contacts) Schottky Diodes (M-S Contacts) Three MITs of the Day Band diagrams for ohmic and rectifying Schottky contacts Similarity to and difference from bipolar junctions on electrostatic and IV characteristics.

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Concepts & Equations. Applications: Devices

Concepts & Equations. Applications: Devices Concepts & Equations Applications: Devices Concepts & Equations Applications: Devices Current = (charge) x (velocity) Ch1-4 Ch5-6 Concepts & Equations Applications: Devices Concepts & Equations Ch1 Landscape

More information

ECE335F: Electronic Devices Syllabus. Lecture*

ECE335F: Electronic Devices Syllabus. Lecture* Lecture 1 - Introduction: Course Overview 1 - Introduction: Course Overview 2 1 Crystal Structure of Solids 2 1 Crystal Structure of Solids 1.1 Semiconductor materials 1.1 Semiconductor materials 1.2 Types

More information

Minimal Update of Solid State Physics

Minimal Update of Solid State Physics Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary

More information

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers

More information

Introduction to Semiconductor Integrated Optics

Introduction to Semiconductor Integrated Optics Introduction to Semiconductor Integrated Optics Hans P. Zappe Artech House Boston London Contents acknowledgments reface itroduction Chapter 1 Basic Electromagnetics 1 1.1 General Relationships 1 1.1.1

More information

Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is

Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is CHAPTER 7 The PN Junction Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is uniformly doped with donor atoms.

More information

NANO/MICROSCALE HEAT TRANSFER

NANO/MICROSCALE HEAT TRANSFER NANO/MICROSCALE HEAT TRANSFER Zhuomin M. Zhang Georgia Institute of Technology Atlanta, Georgia New York Chicago San Francisco Lisbon London Madrid Mexico City Milan New Delhi San Juan Seoul Singapore

More information

Luminescence Process

Luminescence Process Luminescence Process The absorption and the emission are related to each other and they are described by two terms which are complex conjugate of each other in the interaction Hamiltonian (H er ). In an

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Calculating Band Structure

Calculating Band Structure Calculating Band Structure Nearly free electron Assume plane wave solution for electrons Weak potential V(x) Brillouin zone edge Tight binding method Electrons in local atomic states (bound states) Interatomic

More information

KATIHAL FİZİĞİ MNT-510

KATIHAL FİZİĞİ MNT-510 KATIHAL FİZİĞİ MNT-510 YARIİLETKENLER Kaynaklar: Katıhal Fiziği, Prof. Dr. Mustafa Dikici, Seçkin Yayıncılık Katıhal Fiziği, Şakir Aydoğan, Nobel Yayıncılık, Physics for Computer Science Students: With

More information

UNIT I: Electronic Materials.

UNIT I: Electronic Materials. SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: SEMICONDUCTOR PHYSICS (18HS0851) Course & Branch: B.Tech

More information

PN Junction

PN Junction P Junction 2017-05-04 Definition Power Electronics = semiconductor switches are used Analogue amplifier = high power loss 250 200 u x 150 100 u Udc i 50 0 0 50 100 150 200 250 300 350 400 i,u dc i,u u

More information

Chemistry Instrumental Analysis Lecture 8. Chem 4631

Chemistry Instrumental Analysis Lecture 8. Chem 4631 Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device

More information

Chapter 1 Overview of Semiconductor Materials and Physics

Chapter 1 Overview of Semiconductor Materials and Physics Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B

More information

Lecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination

Lecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Lecture 8 Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Reading: (Cont d) Notes and Anderson 2 sections 3.4-3.11 Energy Equilibrium Concept Consider a non-uniformly

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Physics of Semiconductors 8 th

Physics of Semiconductors 8 th Physics of Semiconductors 8 th 2016.6.6 Shingo Katsumoto Department of Physics, Institute for Solid State Physics University of Tokyo Review of pn junction Estimation of builtin potential Depletion layer

More information

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1 Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode

More information

QUANTUM WELLS, WIRES AND DOTS

QUANTUM WELLS, WIRES AND DOTS QUANTUM WELLS, WIRES AND DOTS Theoretical and Computational Physics of Semiconductor Nanostructures Second Edition Paul Harrison The University of Leeds, UK /Cf}\WILEY~ ^INTERSCIENCE JOHN WILEY & SONS,

More information

Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules

Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules OPTI 500 DEF, Spring 2012, Lecture 2 Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules Energy Levels Every atom or molecule

More information

junctions produce nonlinear current voltage characteristics which can be exploited

junctions produce nonlinear current voltage characteristics which can be exploited Chapter 6 P-N DODES Junctions between n-and p-type semiconductors are extremely important foravariety of devices. Diodes based on p-n junctions produce nonlinear current voltage characteristics which can

More information

Semiconductor Physics. Lecture 3

Semiconductor Physics. Lecture 3 Semiconductor Physics Lecture 3 Intrinsic carrier density Intrinsic carrier density Law of mass action Valid also if we add an impurity which either donates extra electrons or holes the number of carriers

More information

Solid State Physics. GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pavia, and INFM

Solid State Physics. GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pavia, and INFM Solid State Physics GIUSEPPE GROSSO Professor of Solid State Physics, Department of Physics, University of Pisa, and INFM GIUSEPPE PASTORI PARRAVICINI Professor of Solid State Physics, Department of Physics,

More information

Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons

Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons Nanoscale Energy Transport and Conversion A Parallel Treatment of Electrons, Molecules, Phonons, and Photons Gang Chen Massachusetts Institute of Technology OXFORD UNIVERSITY PRESS 2005 Contents Foreword,

More information

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states: CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave

More information

9. Semiconductor Devices /Phonons

9. Semiconductor Devices /Phonons Technische Universität Graz Institute of Solid State Physics 9. Semiconductor Devices /Phonons Oct 29, 2018 p and n profiles p n V bi ~ 1 V E c W ~ 1 m E F E max ~ 10 4 V/cm ev bi E v p Ev E F Nv exp kt

More information

Lecture 15: Optoelectronic devices: Introduction

Lecture 15: Optoelectronic devices: Introduction Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1

More information

ELECTRONIC DEVICES AND CIRCUITS SUMMARY

ELECTRONIC DEVICES AND CIRCUITS SUMMARY ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,

More information

Schottky diodes. JFETs - MESFETs - MODFETs

Schottky diodes. JFETs - MESFETs - MODFETs Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different

More information

Quantum Tunneling and

Quantum Tunneling and BEIJING SHANGHAI Quantum Tunneling and Field Electron Emission Theories Shi-Dong Liang Sun Yat-Sen University, China World Scientific NEW JERSEY LONDON SINGAPORE HONG KONG TAIPEI CHENNAI Contents Preface

More information

Harald Ibach Hans Lüth SOLID-STATE PHYSICS. An Introduction to Theory and Experiment

Harald Ibach Hans Lüth SOLID-STATE PHYSICS. An Introduction to Theory and Experiment Harald Ibach Hans Lüth SOLID-STATE PHYSICS An Introduction to Theory and Experiment With 230 Figures Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Hong Kong Barcelona Budapest Contents

More information

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS Second Edition B.K. RIDLEY University of Essex CAMBRIDGE UNIVERSITY PRESS Contents Preface Introduction 1 Simple Models of the Electron-Phonon Interaction

More information

Semiconductor. Byungwoo Park. Department of Materials Science and Engineering Seoul National University.

Semiconductor. Byungwoo Park.   Department of Materials Science and Engineering Seoul National University. Semiconductor Byungwoo Park Department of Materials Science and Engineering Seoul National University http://bp.snu.ac.kr http://bp.snu.ac.kr Semiconductors Kittel, Solid State Physics (Chapters 7 and

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

Understanding. Solid State Physics. Sharon Ann Holgate. CRC Press Taylor & Francis Group Boca Raton London NewYork

Understanding. Solid State Physics. Sharon Ann Holgate. CRC Press Taylor & Francis Group Boca Raton London NewYork Understanding Solid State Physics Sharon Ann Holgate (И CRC Press Taylor & Francis Group Boca Raton London NewYork CRC Press is an imprint of the Taylor & Francis Group, an informa business A TAYLORS FRANCIS

More information

Single Photon detectors

Single Photon detectors Single Photon detectors Outline Motivation for single photon detection Semiconductor; general knowledge and important background Photon detectors: internal and external photoeffect Properties of semiconductor

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor

More information

8. Schottky contacts / JFETs

8. Schottky contacts / JFETs Technische Universität Graz Institute of Solid State Physics 8. Schottky contacts / JFETs Nov. 21, 2018 Technische Universität Graz Institute of Solid State Physics metal - semiconductor contacts Photoelectric

More information

Lecture 18: Semiconductors - continued (Kittel Ch. 8)

Lecture 18: Semiconductors - continued (Kittel Ch. 8) Lecture 18: Semiconductors - continued (Kittel Ch. 8) + a - Donors and acceptors J U,e e J q,e Transport of charge and energy h E J q,e J U,h Physics 460 F 2006 Lect 18 1 Outline More on concentrations

More information

PHOTOVOLTAICS Fundamentals

PHOTOVOLTAICS Fundamentals PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi

More information

Surfaces, Interfaces, and Layered Devices

Surfaces, Interfaces, and Layered Devices Surfaces, Interfaces, and Layered Devices Building blocks for nanodevices! W. Pauli: God made solids, but surfaces were the work of Devil. Surfaces and Interfaces 1 Interface between a crystal and vacuum

More information

The pn junction. [Fonstad, Ghione]

The pn junction. [Fonstad, Ghione] The pn junction [Fonstad, Ghione] Band diagram On the vertical axis: potential energy of the electrons On the horizontal axis: now there is nothing: later we ll put the position qf s : work function (F

More information

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV 3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the

More information

Quantum Device Simulation. Overview Of Atlas Quantum Features

Quantum Device Simulation. Overview Of Atlas Quantum Features Quantum Device Simulation Introduction Motivation for using Quantum models Overview of Atlas Quantum features Discussion of Quantum models - 2 - Motivation Reduction in device size -> coherence length

More information

Introduction to the Electronic Properties of Materials

Introduction to the Electronic Properties of Materials Introduction to the Electronic Properties of Materials David Jiles Ames Laboratory US Department of Energy and Department of Materials Science and Engineering and Department of Electrical and Computer

More information

Quantum and Non-local Transport Models in Crosslight Device Simulators. Copyright 2008 Crosslight Software Inc.

Quantum and Non-local Transport Models in Crosslight Device Simulators. Copyright 2008 Crosslight Software Inc. Quantum and Non-local Transport Models in Crosslight Device Simulators Copyright 2008 Crosslight Software Inc. 1 Introduction Quantization effects Content Self-consistent charge-potential profile. Space

More information

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000

ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 Your Name: ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 1. Review questions a) Illustrate the generation of a photocurrent in a p-n diode by drawing an energy band diagram. Indicate

More information

Introduction to Optoelectronic Device Simulation by Joachim Piprek

Introduction to Optoelectronic Device Simulation by Joachim Piprek NUSOD 5 Tutorial MA Introduction to Optoelectronic Device Simulation by Joachim Piprek Outline:. Introduction: VCSEL Example. Electron Energy Bands 3. Drift-Diffusion Model 4. Thermal Model 5. Gain/Absorption

More information

Introduction to Power Semiconductor Devices

Introduction to Power Semiconductor Devices ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings

More information

Basic Principles of Light Emission in Semiconductors

Basic Principles of Light Emission in Semiconductors Basic Principles of Light Emission in Semiconductors Class: Integrated Photonic Devices Time: Fri. 8:00am ~ 11:00am. Classroom: 資電 06 Lecturer: Prof. 李明昌 (Ming-Chang Lee) Model for Light Generation and

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at

More information

Lecture 11 Midterm Review Lecture

Lecture 11 Midterm Review Lecture Lecture 11 Midterm Review Lecture 1/128 Announcements Homework 3/6: Is online now. Due Monday 14 th May at 10:00am. 2/128 1 Lecture 11 Exam Format. Units. Example Questions. Note: this is not an exhaustive

More information

Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,

Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction, Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier

More information