arxiv:cond-mat/ Jan 2001

Transcription

1 The Physics of Electric Field Effect Thermoelectric Devices V. adomirsy, A. V. Buteo, R. Levi 1 ad Y. chlesiger Deartmet of Physics, Bar-Ila Uiversity, Ramat-Ga 5900, Israel 1 The College of Judea & amaria, Ariel 44837, Israel ABTRACT arxiv:cod-mat/ Ja 001 We describe here a ovel aroach to the subject of thermoelectric devices. The curret best thermoelectrics are based o heavily doed semicoductors or semimetal alloys. We show that utilizatio of electric field effect or ferroelectric field effect, ot oly rovides a ew route to this roblem, byassig the drawbacs of covetioal doig, but also offers sigificatly imroved thermoelectric characteristics. We reset here model calculatio of the thermoelectric figure of merit i thi films of Bi ad PbTe, ad also discuss several realistic device desigs. INTRODUCTION Alicatio of a electric field (Electric Field Effect - EFE) to a caacitor structure of the tye Gate-Dielectric-emimetal (or o-degeerate semicoductor), or Gate-ferroelectric- emimetal ijects, ito the samle, charge carriers which are distributed amog the electro ad hole bads. Deedig o the field olarity, the umber of carriers of the corresodig sig icreases, while the umber of carriers of the other sig dimiishes. This is coected with the chage of the electro (η e ) ad the hole (η h ) Fermi levels with a alied electric field, i. e. η e =η e (E) ad η h =η h (E). Icreasig the electric field ca result i zero cocetratio of the corresodig charge carrier tye. A further icrease of the electric field results i a further icrease of the itroduced carriers ad hece of the coductivity. It follows from the above argumet that all the thermoelectrical effects, such as Peltier, eebec, Nerst etc are strogly deedet o the magitude of the electric field. Thus, the EFE offers a ovel, cotrollable ad more effective route to thermoelectricity. I the followig we will term this sort of thermoelectrics by EFE-TE. I followig we aalyze i detail the electric field deedece of the eebec effect [1]. Oe ca show that the eebec effect is exressed by the formula where =, (1) B = e σ σ s + σ ; B = e σ σ s + σ. (1')

2 Here σ ad σ are the hole ad the electro coductivities, s ad s are the hole ad the electros related eebec coefficiets, < > deotes averagig over the samle thicess. The later is eeded because of the ihomogeeous electric field i samle (the larger the dielectic costat ε the larger the characteristic screeig legth L s, determiig the rate of the exoetial decrease of the field i the samle). I absece of electric field (E=0), ad are of comarable magitude, therefore is smaller tha each of the above quatities. For a certai value of the mobilities, could equal ad therefore =0. It should be oted (Eq. 1') that deeds o the electric field via the field deedece of σ (due to a chage of carrier cocetratio with E) ad the field deedece of s, (via the deedece of the Fermi eergies o E) accordig to where s = 5 ( + λ) 3 ( + λ) F F λ λ η, () Here λ is the exoet i the eergy deedece of the scatterig relaxatio time τ (τ ε λ ), η is the reduced Fermi level (idex idicatig the hole or the electros related quatities), ad F i is the Fermi itegral. ( ε F ) ; η = F = 0 i B T 1 + i x dx. η ) ex( x The uique characteristic of the method we roose here, lays i its ability to dyamically otimize ad vary the thermoelectric behavior of the system (by varyig the alied electric field magitude ad olarity) uder a variety of coditios. TET-CAE CALCULATION a. Bi films. The curves of Fig. 1 were calculated assumig a value of film thicess L=100, ad temerature T=300 K. It should be oted that the detailed shae of the curve i Fig. 1 (i articular, via the eergy deedece of the mobilities) deeds also o the articular scatterig mechaism (e.g. scatterig by defects, ioized imurities, acoustic ad/or otical hoos etc).

3 , µv/k, µv/k =1, µ =0.5 =1, µ =1 (a) (b) D, 10 8 V/cm Figure 1. The total,, ad the artial ( due to holes a due to electros) eebec coefficiets as a fuctio of the electric dislacemet D. (a) - mobilities =1, µ =0.05 m /Vsec (b) - mobilities =1, µ =1 m /Vsec The curves have bee calculated assumig oly electro-acoustic hoo scatterig. With icreasig ositive olarity (for defiiteess) the hole cocetratio, ad therefore also goes to zero. At the same time goes through a maximum ad the falls with icreasig E (because of the icrease of η with E). A similar behavior (with the roles of electros ad holes iterchaged) is obtaied for egative E. This is demostrated i Fig. 1 by the two extrema of (D) (D is the electrical dislacemet) at D m,os ad D m,eg. The quality of the thermoelectric behavior is usually characterized by the dimesioless, samle averaged, figure of merit [] σ M = T, ((3) σ κ where σ is the electrical coductivity. The electric field deedece of M is show i Fig.. The two maxima of M are related to the two extrema of (see Fig. 1). They aear at slightly shifted values of E, due to the mootoical field deedece of σ. It follows thus, that (together with the field variatio of the thermoelectric quatities described above) also a strog field deedece of M should be observed. This leads to the ossibility that thi Bi films (which are ot good thermoelectrics) ca actually attai a high M uder electric field coditios.

4 M =3, µ =1.5 =1, µ =1 =3, µ =0.75 =1, µ =0.5 =0.3, µ = b. PbTe film. D, 10 8 V/cm Figure. The samle averaged figure of merit, for differet combiatios of the electro ad hole mobilities, as a fuctio of the electric dislacemet D. The curves have bee calculated assumig oly electro-acoustic hoo scatterig. The curretly tyical thermoelectrics are the, arrow ga, doed semicoductors A IV B VI such as Bi Te 3, PbTe etc. Fig. 3 shows the calculatio results of the maximum value of M(D), for PbTe, as a fuctio of film thicess L. The rage of film-thicess L<700 was chose so that L L s (the screeig legth), assurig a reasoable homogeeity of the electric field over the samle thicess. The reset "worst case" calculatios are based uo a assumed value of mobility µ = 0.05 m /Vsec (a tyical value determied by the curret thi film rearatio methodology) ad assumig electro-acoustic hoo scatterig mechaism oly. Eve so, desite the low mobility ad the ufavorable eergy deedece of τ (τ e-h ε -0.5 ), the calculated figure of merit for PbTe uder the electric field effect, reaches a cosiderably high value M for a thi (L<10 ) film, see Fig. 3. I aalogy with the techological advaces.0 Figure 3. M,, max The maximum samle averaged figure of merit M(E) for thermoelectric layer of (1) - egative olarity (-tye) () - ositive olarity (-tye) as a fuctio of film thicess L L, Agstrom

5 i Bi film rearatio methods [3], we exect a similar imrovemet i the PbTe system, resultig i a higher mobility (actually, a value of µ = 0. m /Vsec, at room temerature, has bee reorted just ow [4]). Moreover, it is oteworthy that, i geeral, for a give value of mobility, M(E) will be sigificatly higher whe other scatterig mechaisms (besides electro-acoustic hoo scatterig) are ivolved. EFE-TE DEVICE TRUCTURAL CONFIGURATION The aalysis ad calculatios, outlied i the revious sectios, have bee carried out assumig the simlest model structure (a arallel late caacitor, comrisig of a metallic gate, a dielectric layer ad a semimetal or semicoductor film). However, it is clear that more comlex structures ca be develoed for higher efficiecy ad/or for secific uroses. I the followig we describe shortly several of the cofiguratios curretly studied, both exerimetally as well as theoretically. a. - thermoelemet. This two-arm structure, show i Figure 4, is obtaied by relacig the metallic gate by a secod layer of thermoelectric material. This device exloits the electric field effect mechaism, causig the egative olarity thermoelectric layer to become a - tye semimetal (or semicoductor) ad, at the same time, the ositive olarity layer to become -tye. This structure thus serves as a cotrollable thermoelectric aalogue of the stadard - elemet. The device ca be otimized choosig differet thermoelectrics for each arm. I -tye (Bi) Figure 4. The two-arm - thermoelemet. V g Dielectric / Ferroelectric -tye (PbTe) Cold ed Hot ed I

6 V g,1 V g, V g,3... V g, Gates... Dielectric / Ferroelectric Figure 5. The sectioed gate EFEgradiet thermoelemet. -, -tye Cold ed Hot ed b. EFE gradiet thermoelectric device. I this device, show i Figure 5, a sectioed gate cofiguratio or a resistive gate, create the coditios aalogous to the gradiet doig i covetioal thermoelectrics. It should be emhasized that i the EFE-TE case the gradiet ca be dyamically varied, thus offerig a active device. c. A slit-gate Peltier cooler/heater device. Here, as show i Figure 6, oosite olarity voltage is alied to the two sectios of the slit gate thus creatig a - juctio. I such way, the directio of curret determies whether the - juctio absorbs or emits heat. I + V g,1 V g, Dielectric / Ferroelectric - I Figure 6. The slit-gate Peltier cooler/heater. Coolig or heatig fuctios are determied by the directio of the curret. REFERENCE 1. G. D. Maha, ol. tate Phys., 51, 81 (1998).. Film Thermoelemets: Physics ad Alicatio, ed. N.. Lidoreo, Naua, Moscow (1985) i Russia. 3. F. Y. Yag, Kai Liu, Kimi Hog, D. H. Reich, P. C. earso, C. L. Chie, Y. Lerice- Wag, Kui Yu-Zhag ad Ke Ha, Phys. Rev. B, 61, 6631 (000), C. L. Chie, F. Y. Yag, Kai Liu ad D. H. Reich, Joural of Al. Phys., 87, 4659 (000). 4. Z. Dashevsy, rivate commuicatio.