Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics Positive V CE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design TOTALLY LEADFREE ECONO2 6PACK V CES = 2V I C =3A @ T C =8 C t sc > μs @ T J = C V CE(on) typ. = 2.64V Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996 Absolute Maximum Ratings Parameter Max. Units V CESi CollectortoEmitter Voltage 2 V I C @ Tc=2 C Continuous Collector Current 2 A I C @ Tc=8 C Continuous Collector Current 3 I CM Pulsed Collector Current (Ref. Fig. C.T.) 4 I LM Clamped Inductive Load Current 4 I F @ Tc=2 C Diode Continuous Forward Current 2 I F @ Tc=8 C Diode Continuous Forward Current 2 I FM Diode Maximum Forward Current 4 V GE GatetoEmitter Voltage ±2 V P D @ Tc=2 C Maximum Power Dissipation (IGBT and Diode) W P D @ Tc=8 C Maximum Power Dissipation (IGBT and Diode) 8 T J Maximum Operating Junction Temperature C T STG Storage Temperature Range 4 to 2 V ISOL Isolation Voltage AC 2 (MIN) V Thermal and Mechanical Characteristics Parameter Min Typical Maximum Units R θjc (IGBT) JunctiontoCase IGBT.42 C/W R θjc (Diode) JunctiontoCase Diode.97 R θcs (Module) CasetoSink, flat, greased surface. Mounting Torque (M) 2.7 3.3 N*m Weight 7 g www.irf.com
GBXF2K Bulletin I27279 /6 Electrical Characteristics @ T J = 2 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV (CES) CollectortoEmitter Breakdown Voltage 2 V V GE = I C = μa ΔV (BR)CES /ΔT J Temp. Coefficient of Breakdown Voltage.87 V/ C V GE = I C = ma (2 C 2 C) V CE(ON) CollectortoEmitter Voltage 2.64 2.8 V I C = A V GE = V 3.9 3.94 I C = 2A V GE = V 3.7 3.46 I C = A V GE = V T J = 2 C 4.48 4.97 I C =2A V GE = V T J = 2 C V GE (th) Gate Threshold Voltage 4 6 V CE = V GE I C = 2μA ΔV GE (th)/δt J Thresold Voltage temp. coefficient.4 mv/ C V CE = V GE I C = ma (2 C2 C) I CES Zero Gate Voltage Collector Current μa V GE = V CE = 2V 7 V GE = V CE = 2V Tj = 2 C V FM Diode Forward Voltage Drop 2. 2.28 V I F = A 2.48 2.9 I F = 2A 2.6 2. I F = A Tj = 2 C 2.87 3.42 I F = 2A Tj = 2 C I GES GatetoEmitter Leakage Current ±2 na V GE = ±2V Switching Characteristics @ T J = 2 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q G Total Gate Charge (turnon) 48 7 I C = A Q GE GatetoEmitter Charge (turnon) 8 nc = 6V Q GC GatetoCollector Charge (turnon) 22 33 V GE = V E ON TurnOn Switching Loss.84.26 mj I C = A = 6V E OFF TurnOff Switching Loss.36.4 V GE = V R G = 22Ω L = mh E TOT Total Switching Loss.2.8 Tj = 2 C E ON TurnOn Switching Loss.4.7 mj I C = A = 6V E OFF TurnOff Switching Loss.64.96 V GE = V R G = 22Ω L = mh E TOT Total Switching Loss.78 2.67 Tj = 2 C t d(on) TurnOn delay time 83 24 ns I C = A = 6V t r Rise time 2 32 V GE = V R G = 22Ω L = mh t d(off) TurnOff delay time 72 Tj = 2 C t f Fall time 279 42 C ies Input Capacitance 7 pf V GE = C oes Output Capacitance 9 29 = 3V C res Reverse Transfer Capacitance 2 3 f = Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE Tj = C I C = 4A R G = 22Ω V GE = V to SCSOA Short Circuit Safe Operating Area μs Tj = C = 96V V P = 2V R G = 22Ω V GE = V to I rr Diode Peak Rev. Recovery Current 22 A Tj = 2 C = 6V I F = A L = mh V GE = V R G = 22Ω Energy losses include "tail" and diode reverse recovery. 2 www.irf.com
2 Inverter 2 GBXF2K Bulletin I27279 /6 Ice (A) Vge=8V Vge=V Vge=2V Vge=V Vge=8V Ice (A) Vge=8V Vge=V Vge=2V Vge=V Vge=8V 2 3 4 6 2 8 6 4 2 8 6 4 2 3 Fig. Typ. IGBT Output Characteristics T J = 2 C; tp = 8μs Ice=A Ice=A Ice=2A 2 Vge (V) Fig. 3 Typical V CE vs. V GE T J = 2 C 2 3 4 6 Fig. 2 Typ. IGBT Output Characteristics T J = 2 C; tp = 8μs 2 8 6 4 2 8 6 4 Ice=2.A Ice=2A Ice=A 2 2 Vge (V) Fig. 4 Typical V CE vs. V GE T J = 2 C tf 2. ETOT Energy (mj) 2.. EON EOFF Swiching Time (µs).. tdoff tdon tr 2 2 Fig. Typ. Energy Loss vs. I C T J = 2 C; L=mH; V CE = 6V R G = 22Ω; V GE = V. 2 2 Fig. 6 Typ. Switching Time vs. I C T J = 2 C; L=mH; V CE = 6V R G = 22Ω; V GE = V www.irf.com 3
GBXF2K Bulletin I27279 /6.8 Inverter. tf Energy (mj).2.9.6 E (TOT) E (ON) E (OFF) Swiching Time (µs).. tdoff tdon tr.3 2 3 4 Rg (Ω). 2 2 3 3 4 4 Rg (Ω ) Fig. 7 Typ. Energy Loss vs. R G T J = 2 C; L=mH; V CE = 6V I CE = A; V GE = V 6 Fig. 8 Typ. Switching Time vs. R G T J = 2 C; L=mH; V CE = 6V; I CE = A; V GE = V Capacitance (pf) Cies Coes VGE (V) 4 2 8 6 4 6V Cres 2 2 2 4 6 8 Fig. 9 Typ. Capacitance vs. V CE V GE = ; f = MHz 2 3 4 QG, Total Gate Charge (nc) Fig. Typical Gate Charge vs. V GE I CE = A 2 8 Ptot (W) 6 4 2 2 4 6 8 2 4 6 Tc ( C) Fig. Maximum DC Collector Current vs. Case Temperature 2 4 6 8 2 4 6 Tc ( C) Fig. 2 Power Dissipation vs. Case Temperature 4 www.irf.com
Inverter GBXF2K Bulletin I27279 /6 2 µs µs. ms ms DC. Fig. 3 Forward SOA T C = 2 C; T J C Fig. 4 Reverse Bias SOA T J = C; V GE =V 8 4 7 6 Tj = 2 C Tj = 2 C 3 3 Tj = 2 C Tj = 2 C 4 If (A) 2 2 3 2 2 Vge (V) Fig. Typ. Transfer Characteristics V CE =V; tp=μs.. 2 2. 3 3. 4 Vf (V) Fig. 6 Typ. Diode Forward Characteristics tp = 8μs Irr (A) 4 4 3 3 2 2 Rg=4.7Ω Rg=Ω Rg=22Ω Rg=33Ω Rg=47Ω Irr (A) 3 3 2 2 2 2 If (A) 2 3 4 Rg (Ω ) Fig. 7 Typical Diode I RR vs. I F T J = 2 C Fig. 8 Typical Diode I RR vs. R G T J = 2 C; I F = A www.irf.com
GBXF2K Bulletin I27279 /6 3 3 2 Irr (A) 2 4 6 7 8 9 dif/dt (A/µs) Fig. 9 Typical Diode I RR vs. di F /dt; = 6V; V GE = V; I CE = A; T J = 2 C Thermal Response (ZthJC)... E E4 E3 E2 E E t, Rectangular Pulse Duration (sec) Fig 2. Maximum Transient Thermal Impedance, JunctiontoCase (IGBT)..3...2. SINGLE PULSE (THERMAL RESPONSE) Tτ J τ τ τ 2 τ 2 Ci= τi/ri Ci i/ri R R 2 R R 2 T C Ri ( C/W).23.8679 τi (sec),43.649 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc tc Thermal Response (ZthJC)...3...2. R R 2 R 3 R R 2 R 3 T τ J T C J τ τ τ 2 τ τ 3 2 τ 3 Ci= τi/ri Ci= i/ri Ri ( C/W).2.429.447 τi (sec).27.438.2738 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc tc SINGLE PULSE (THERMAL RESPONSE). E E4 E3 E2 E E t, Rectangular Pulse Duration (sec) Fig 2. Maximum Transient Thermal Impedance, JunctiontoCase (DIODE) 6 www.irf.com
GBXF2K Bulletin I27279 /6 R = I CM diode clamp/ DUT L V GE ma I C R G V DUT/ DRIVER Fig.C.T. Gate Charge Circuit (turnoff) Fig.C.T.2 RBSOA Circuit diode clamp/ DUT L DUT V DUT/ DRIVER R G R G Fig.C.T.3 S.C. SOA Circuit Fig.C.T.4 Switching Loss Circuit R = I CM DUT R G Fig.C.T. Resistive Load Circuit www.irf.com 7
GBXF2K Bulletin I27279 /6 Econo2 6Pak Package Outline Dimensions are shown in millimeters (inches) Econo2 6Pak Part Marking Information LOT GBXF2K Made in Italy Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 924, USA Tel: (3) 227 TAC Fax: (3) 22793 Visit us at www.irf.com for sales contact information. /6 8 www.irf.com