IXXR110N65B4H1. XPT TM 650V GenX4 TM w/ Sonic Diode V CES I C110. = 650V = 70A V CE(sat) 2.10V = 43ns. t fi(typ) (Electrically Isolated Tab)
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1 XPT TM V GenX TM w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for -khz Switching IXXRNBH S = V = 7A (sat).v = ns t fi(typ) ISOPLUS7 TM Symbol Test Conditions Maximum Ratings S = C to 7 C V V CGR = C to 7 C, R GE = M V V GES Continuous ± V V GEM Transient ± V = C (Chip Capability) A = C 7 A I F = C A M = C, ms 9 A SSOA V GE = V, T VJ = C, R G = M = A (RBSOA) Clamped Inductive S t sc V GE = V, = V, = C μs (SCSOA) R G =, Non Repetitive P C = C W C M 7 C T stg C T L Maximum Lead Temperature for Soldering C T SOLD. mm (.in.) from Case for s C V ISOL / Hz, Minute V F C Mounting Force../...7 N/lb Weight g Features G C E Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface V~ Electrical Isolation Optimized for -khz Switching Square RBSOA Short Circuit Capability Anti-Parallel Sonic Diode High Current Handling Capability Advantages Isolated Tab G = Gate C = Collector E = Emitter High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. BS = μa, V GE = V V V GE(th) = μa, = V GE.. V ES = S, V = V μa GE = C μa I GES = V, V GE = ±V ± na (sat) = A, V GE = V, Note.7. V = C. V Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters IXYS CORPORATION, All Rights Reserved DS9C(/)
2 IXXRNBH Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. g fs = A, = V, Note S C ies pf C oes = V, V GE = V, f = MHz 7 pf C res pf Q g(on) nc Q ge = A, V GE = V, =. S nc Q gc nc ns t ri Inductive load, = C ns = A, V GE = V. mj t d(off) = V, R G = ns t fi Note ns..7 mj ns t ri Inductive load, = C ns = A, V GE = V. mj t d(off) = V, R G = ns t fi Note ns. mj R thjc. C/W R thcs. C/W ISOPLUS7 (IXXR) Outline - Gate - Collector - Emitter Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. V F I F = A, V GE = V, Note.7. V = C. V I RM I F = A, V GE = V, = C 9 A t rr -di F /dt = A/ s V R = V ns R thjc.7 C/W Notes:. Pulse test, t μs, duty cycle, d %.. Switching times & energy losses may increase for higher (Clamp), or R G. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,,9,9,,9,9,7,,,,, B,,,77, 7,,7 B 7,7,B by one or more of the following U.S. patents:,,7,7,,,7,,,9, B,,,7, B,79,9 7,,97 B,,,,79,7,7,,7,,7 B,,,7,,77,7 B 7,7,7
3 IXXRNBH Fig.. Output = ºC Fig.. Extended Output = ºC V GE = V V V V V 9V V GE = V V V V V V V 9V 7V V.... 7V Fig.. Output = ºC. Fig.. Dependence of (sat) on V GE = V V V V. V GE = V V V 9V VCE(sat) - Normalized.... = A = A..... V 7V. = A Degrees Centigrade. Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig.. Input Admittance VCE - Volts.... = A = ºC = - ºC ºC = ºC. A.. 9 V GE - Volts A 7 9 V GE - Volts IXYS CORPORATION, All Rights Reserved
4 IXXRNBH Fig. 7. Transconductance Fig.. Gate Charge 9 7 = - ºC = V = A I G = ma g f s - Siemens ºC ºC VGE - Volts - Amperes Q G - NanoCoulombs Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area, Cies Capacitance - PicoFarads, f = MHz Coes Cres = ºC R G = Ω dv / dt < V / ns 7 Fig.. Maximum Transient Thermal Impedance (IGBT) Z(th)JC - K / W Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
5 IXXRNBH 7 Fig.. Inductive Switching Energy Loss vs. Gate Resistance Fig.. Inductive Switching Energy Loss vs. Collector Current = ºC, V GE = V R G = Ω, V GE = V Eoff - MilliJoules = V = A - MilliJoules Eoff - MilliJoules = V = ºC = ºC - MilliJoules = A R G - Ohms Amperes Fig.. Inductive Switching Energy Loss vs. Fig.. Inductive Turn-off Switching Times vs. Gate Resistance R G = Ω, V GE = V = V t f i t d(off) = ºC, V GE = V = V Eoff - MilliJoules = A - MilliJoules t f i - Nanoseconds = A = A t d(off) - Nanoseconds = A 7 - Degrees Centigrade 7 9 R G - Ohms Fig.. Inductive Turn-off Switching Times vs. Collector Current Fig. 7. Inductive Turn-off Switching Times vs. t f i t d(off) R G = Ω, V GE = V = V t f i t d(off) R G = Ω, V GE = V = V t f i - Nanoseconds = ºC = ºC t d(off) - Nanoseconds t f i - Nanoseconds = A, A t d(off) - Nanoseconds Amperes 7 - Degrees Centigrade IXYS CORPORATION, All Rights Reserved
6 IXXRNBH Fig.. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 9. Inductive Turn-on Switching Times vs. Collector Current t r i 9 t r i 9 t r i - Nanoseconds = ºC, V GE = V = V = A = A 7 - Nanoseconds t r i - Nanoseconds R G = Ω, V GE = V = V = ºC = ºC 7 - Nanoseconds 7 9 R G - Ohms Amperes Fig.. Inductive Turn-on Switching Times vs. t r i R G = Ω, V GE = V = V t r i - Nanoseconds = A = A - Nanoseconds 7 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
7 IXXRNBH Fig.. Typ. Forward characteristics Fig.. Typ. Reverse Recovery Charge Q rr vs. -di F /dt T VJ = ºC 7 V R = V I F = A T VJ = ºC IF [A] 7 T VJ = ºC QRM [µc] A A... V F - [V] -di F / dt [A/µs] Fig.. Typ. Peak Reverse Current I RM vs. -di F /dt Fig.. Typ. Recovery Time t rr vs. -di F /dt T VJ = ºC V R = V I F = A T VJ = ºC V R = V A IRM [A] A trr [ns] I F = A A A di F /dt [A/µs] -di F /dt [A/µs] Fig.. Typ. Recovery Energy E rec vs. -di F /dt Fig.. Maximum Transient Thermal Impedance ( Diode) T VJ = ºC V R = V I F = A Erec [mj] A Z(th)JC - K / W.. A -di F /dt [A/µs]..... Pulse Width [s] IXYS CORPORATION, All Rights Reserved IXYS REF: IXH_NB(E-RZ) --
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