AON8 3 NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos L) technology ery Low RDS(on) at. GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary DS I D (at GS =) R DS(ON) (at GS =) R DS(ON) (at GS =.) 3 3A < 3.mΩ < mω Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial % UIS Tested % R g Tested Top iew DFNX Bottom iew Top iew D 3 8 7 G PIN S Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol DrainSource oltage DS GateSource oltage Continuous Drain Current G GS Maximum 3 ± Pulsed Drain Current C I DM 8 T A = C I DSM 9 Continuous Drain Current T A =7 C 3 Avalanche Current C Avalanche energy L=.mH C DS Spike Power Dissipation B Power Dissipation A T C = C T C = C T C = C Junction and Storage Temperature Range I AS E AS SPIKE T J, T STG Thermal Characteristics Parameter Symbol Typ Maximum JunctiontoAmbient A t s R θja Maximum JunctiontoAmbient A D SteadyState 3 Maximum JunctiontoCase SteadyState R θjc. I D ns 3 T C = C P DSM 3 3 P D T A = C. T A =7 C.7 to Max 3 3 Units A A A mj W W C Units C/W C/W C/W Rev..: January 3 www.aosmd.com Page of
Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS B DSS DrainSource Breakdown oltage I D =µa, GS = 3 I DSS DS =3, GS = T J = C I GSS GateBody leakage current DS =, GS = ± na GS(th) Gate Threshold oltage DS = GS, I D =µa..8. R DS(ON) Zero Gate oltage Drain Current Static DrainSource OnResistance GS =, I D =A GS =., I D =A. 3. T J = C 3.. 3. mω g FS Forward Transconductance DS =, I D =A S SD Diode Forward oltage I S =A, GS =.7 I S Maximum BodyDiode Continuous Current 8 A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance GS =, DS =, f=mhz 898 pf C rss Reverse Transfer Capacitance pf R g Gate resistance GS =, DS =, f=mhz.9.8.7 Ω SWITCHING PARAMETERS Q g () Total Gate Charge 3 9 nc Q g (.) Total Gate Charge 7 3 nc GS =, DS =, I D =A Q gs Gate Source Charge nc Q gd Gate Drain Charge 8 nc t D(on) TurnOn DelayTime 7. ns t r TurnOn Rise Time GS =, DS =, R L =.7Ω,. ns t D(off) TurnOff DelayTime R GEN =3ΩΩ 37. ns t f TurnOff Fall Time 7. ns t rr Body Diode Reverse Recovery Time I F =A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =A, di/dt=a/µs.3 nc A. The value of R θja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. The Power dissipation P DSM is based on R θja and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) = C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) = C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) = C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERES THE RIGHT TO IMPROE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: January 3 www.aosmd.com Page of
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8. 3. 3 3 DS = I D (A) 3 I D (A) GS =. C C 3 DS (olts) Fig : OnRegion Characteristics (Note E) 3 GS (olts) Figure : Transfer Characteristics (Note E).8 R DS(ON) (mω) 3 GS =. GS = Normalized OnResistance... GS = I D =A GS =. I D =A 3 I D (A) Figure 3: OnResistance vs. Drain Current and Gate oltage (Note E).8 7 7 Temperature ( C) Figure : OnResistance vs. Junction Temperature (Note E) 8.E R DS(ON) (mω) C C I D =A I S (A).E.E.E.E.E3 C C 8 GS (olts) Figure : OnResistance vs. GateSource oltage (Note E).E.E SD (olts) Figure. :. BodyDiode. Characteristics..8 (Note. E). Rev..: January 3 www.aosmd.com Page 3 of
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 8 DS = I D =A C iss GS (olts) Capacitance (pf) C oss 3 Q g (nc) Figure 7: GateCharge Characteristics C rss DS (olts) Figure 8: Capacitance Characteristics. I D (Amps).... R DS(ON) T J(Max) = C T C = C DC µs µs µs ms ms Power (W) 3 T J(Max) = C T C = C 7... DS (olts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Figure : Single Pulse Power Rating JunctiontoCase 8 (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =3 C/W Single Pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note F) In descending order D=.,.3,.,.,.,., single pulse P D T on T Rev..: January 3 www.aosmd.com Page of
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Power Dissipation (W) 3 Current rating I D (A) 3 7 T CASE ( C) Figure : Power Derating (Note F) 7 T CASE ( C) Figure 3: Current Derating (Note F) T A = C Power (W)... Figure : Single Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja = C/W Single Pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note H) In descending order D=.,.3,.,.,.,., single pulse P D T on T Rev..: January 3 www.aosmd.com Page of
Gate Charge Test Circuit & Waveform Qg Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR B DSS Rg Id Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: January 3 www.aosmd.com Page of