Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.
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1 SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5 Ω Continuous drain current I D Type Package Ordering Code PTO3 Q67S3 E345 PTO633 Q67S36 E345 PTO633 Q67S35 Packaging Tube Tape and Reel Tube Pin Pin Pin 3 G D S Maximum Ratings, att j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T C =5 C T C = C I D 6 Pulsed drain current T C =5 C valanche energy, single pulse I D =,V DD =5V,R GS =5Ω IDpulse 88 E S 9 valanche energy, periodic limited by T jmax E R 5.5 Reverse diode dv/dt I S =,V DS =V,di/dt = /µs, T jmax = 75 C dv/dt 6 kv/µs Gate source voltage V GS ± V Power dissipation T C =5 C mj P tot 55 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68 55/75/56 Data Book 5.99
2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc.7 K/W Thermal resistance, junction ambient, leded R thj 6 SMD version, device on min. 6 cm cooling area ) R thj 6 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain source breakdown voltage V GS = V, I D =.5 m, T j = 5 C V (BR)DSS 55 V Gate threshold voltage, V GS = V DS I D = µ Zero gate voltage drain current V DS = 5 V, V GS = V, T j = 5 C V DS = 5 V, V GS = V, T j = 5 C Gatesource leakage current V GS = V, V DS = V DrainSource onstate resistance V GS = V, I D = 6 V GS(th). 3 4 I DSS µ. I GSS n R DS(on).4.5 Ω Device on mm*mm*.5mm epoxy PCB FR4 with 6 cm (one layer, 7µm thick) copper area for drain connection. PCB is vertical without blown air. Data Book 5.99
3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs 7 S V DS *I D *R DS(on)max, I D = 6 Input capacitance C iss pf V GS = V, V DS = 5 V, f = MHz Output capacitance C oss 7 5 V GS = V, V DS = 5 V, f = MHz Reverse transfer capacitance C rss 95 V GS = V, V DS = 5 V, f = MHz Turnon delay time t d(on) 5 5 ns V DD = 3 V, V GS = V, I D =, R G = Ω Rise time t r 5 V DD = 3 V, V GS = V, I D =, R G = Ω Turnoff delay time t d(off) 3 45 V DD = 3 V, V GS = V, I D =, R G = Ω Fall time V DD = 3 V, V GS = V, I D =, R G = Ω t f 5 Data Book
4 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge V DD = V, I D = Q gs nc Gate to drain charge V DD = V, I D = Gate charge total V DD = V, I D =, V GS = to V Gate plateau voltage V DD = V, I D = Q gd Q g V (plateau) 5.9 V Reverse Diode Inverse diode continuous forward current T C = 5 C Inverse diode direct current,pulsed T C = 5 C Inverse diode forward voltage V GS = V, I F = 44 Reverse recovery time V R = 3 V, I F =I S, di F /dt = /µs Reverse recovery charge V R = 3 V, I F =l S, di F /dt = /µs I S I SM 88 V SD..8 V t rr ns Q rr..8 µc Data Book
5 Power Dissipation P tot = f (T C ) 6 W 5 45 Drain current I D = f (T C ) parameter: V GS V Ptot 35 ID C C 9 T C T C Safe operating area I D = f (V DS ) parameter : D =, T C = 5 C t p = 6.µs Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W µs ID R DS(on) = V DS / I D ZthJC D =.5.. ms.5 ms 3 single pulse.. DC V V DS s t p Data Book
6 Typ. output characteristics I D = f (V DS ) parameter: t p = 8 µs 55 P tot = 55W l 45 k j V GS [V] a 4. Typ. drainsourceonresistance R DS(on) = f (I D ) parameter: V GS.6 c d e f g h Ω i ID b 4.5 i c 5. d 5.5 e h 6. f 6.5 g g 7. h 7.5 RDS(on) f i 8. j 9. e k. l. d.6.4 l j k 5 c b a V 5.5 V DS Typ. transfer characteristics I D = f (V GS ) parameter: t p = 8 µs V DS x I D x R DS(on) max 6. V GS [V] = c 5. d 5.5 e 6. f 6.5 g 7. h 7.5 i 8. j 9. k l I D Typ. forward transconductance g fs = f(i D ); T j = 5 C parameter: g fs 4 S ID gfs V V GS I D Data Book
7 Drainsource onresistance R DS(on) = f (T j ) parameter : I D = 6, V GS = V.7 Ω.4 Gate threshold voltage V GS(th) = f (T j ) parameter : V GS = V DS, I D = µ 5. V RDS(on).. VGS(th) % typ max typ min. 6 6 C Typ. capacitances C = f (V DS ) parameter: V GS = V, f = MHz 4 T j. 6 6 C Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, t p = 8 µs T j pf 3 C Ciss IF Coss Crss T j = 5 C typ T j = 75 C typ T j = 5 C (98%) T j = 75 C (98%) V V DS V 3. V SD Data Book
8 valanche Energy E S = f (T j ) parameter: I D =, V DD = 5 V R GS = 5 Ω mj 8 7 Typ. gate charge V GS = f (Q Gate ) parameter: I D puls = 6 V ES 6 VGS, V DS max,8 V DS max C 8 T j nc 6 Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 66 V 64 V(BR)DSS C T j Data Book
Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
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SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on) 8 Ω Continuous
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SIPMOS Power Transistor BUZ 31 H N channel Enhancement mode valanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type V DS R DS(on) Package Pb-free BUZ 31 H 2 V 14.5.2 Ω PG-TO-22-3 Yes Maximum Ratings Parameter
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Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
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OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
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SPB7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current
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IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
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SPW5N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated
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BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationPreliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS =Power Transistor Feature =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Ultra low effective capacitances SPW47N6C3 Product Summary
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IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
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Type BSS225 SIPMOS Small-Signal-Transistor Feature n-channel enhancement mode Logic level Product Summary 1) V DS 6 V R DS(on),max 45 Ω I D.9 A dv /dt rated Qualified according to AEC Q11 Halogen free
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OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
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More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
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Type SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic level BSS131 Product Summary V DS 24 V R DS(on),max 14 Ω I D.1 A dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23
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