Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.
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1 IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance 75 C operating temperature dv/dt rated Product Summary V DS 5 V R DS(on) 5. mω 5 P TO5 3 Type Package Ordering Code IPD6N3LZ P TO5 3 Q674S496 Marking 6N3LZ Maximum Ratings, at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T C =5 C ) Pulsed drain current puls 35 T C =5 C ) valanche energy, single pulse =5, V DD =5V, R GS =5Ω Reverse diode dv/dt I S =5, V DS =4V, di/dt=/µs, T jmax =75 C 5 5 E S 375 mj dv/dt 6 kv/µs Gate source voltage 3) V GS ± V Power dissipation T C =5 C P tot 83 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68 55/75/56 Rev.. Page 33
2 IPD6N3LZ Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction case R thjc.8 K/W Thermal resistance, junction ambient, leaded R thj SMD version, device on PCB: R min. 6 cm cooling area 4) 75 5 Electrical Characteristics, at T j = 5 C, unless otherwise specified Static Characteristics Drainsource breakdown voltage V GS =V, =m Gate threshold voltage, V GS = V DS =4µ Zero gate voltage drain current V DS =5V, V GS =V, T j =5 C V DS =5V, V GS =V, T j =5 C Gatesource leakage current V GS =V, V DS =V Drainsource onstate resistance V GS =4.5V, =3 Drainsource onstate resistance V GS =V, =3 V (BR)DSS 5 V V GS(th)..6 SS. µ I GSS n R DS(on) mω R DS(on) Gate resistance R G. Ω Current limited by bondwire; with a RthJC =.8K/W the chip is able to carry =9. See figure 3. 3 Tjmax =5 C for V GS <5V 4 Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.. Page 33
3 IPD6N3LZ Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS * *R DS(on)max, S =3 Input capacitance C iss V GS =V, V DS =5V, 9 83 pf Output capacitance C oss f=mhz 83 8 Reverse transfer capacitance C rss 7 58 Turnon delay time t d(on) V DD =5V, V GS =V, ns Rise time t r =5, 7 6 Turnoff delay time t d(off) R G =.7Ω Fall time t f 7..8 Gate Charge Characteristics Gate to source charge Q gs V DD =5V, = nc Gate charge at threshold Q G(th).6 Gate to drain charge Q gd Switching Charge ) Q sw.6 6 Gate charge total Q g V DD =5V, =5, V GS = to 5V Output charge Q oss V DS =5V, =5, V GS =V 7.8. Gate Charge total, Sync. FET Q g(sync) V GS = to 5V, V DS =.V Gate plateau voltage V (plateau) V DD =5V, =5 3.3 V Reverse Diode Inverse diode continuous I S T C =5 C 5 forward current Inv. diode direct current, pulsed I SM 35 Inverse diode forward voltage V SD V GS =V, I F =5.3 Reverse recovery charge Q rr V R =V, I F =l S, < nc di F /dt=4/µs See figure 6 Rev.. Page 3 33
4 IPD6N3LZ Power dissipation P tot = f (T C ) Drain current = f (T C ) parameter: V GS V IPD6N3LZ W 55 IPD6N3LZ P tot 6 ID C 9 T C C 9 T C 3 Safe operating area = f ( V DS ) parameter : D =, T C = 5 C 3 IPD6N3LZ t p = 4.6µs µs 4 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W IPD6N3LZ R DS(on) = V DS / µs ZthJC D =.5. ms..5 DC ms 3 single pulse.. V V DS Rev.. Page s t p 33
5 IPD6N3LZ 5 Typ. output characteristic = f (V DS ); T j =5 C parameter: t p = 8 µs 6 Typ. drainsource on resistance R DS(on) = f ( ) parameter: V GS 8 5V 7V V 4.5V 4.3V mω 3 3.5V 3.8V 4V 4.3V 7 6 4V RDS(on) 5 3.8V V 5 4.5V 5V V.5.5 V 3 V DS 7 Typ. transfer characteristics = f ( V GS ); V DS x x R DS(on)max parameter: t p = 8 µs Typ. forward transconductance g fs = f( ); T j =5 C parameter: g fs S gfs V 5 V GS Rev.. Page 5 33
6 IPD6N3LZ 9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : = 3, V GS = V IPD6N3LZ Ω Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS.4 4µ RDS(on) % typ. 4µ 5 % C T j Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 4 3 IPD6N3LZ pf C iss 3 C C oss I F C rss T j = 5 C typ T j = 75 C typ T j = 5 C (98%) T j = 75 C (98%) V V DS V 3 V SD Rev.. Page 6Rev.. 33
7 IPD6N3LZ 3 Typ. avalanche energy E S = f (T j ) par.: = 5, V DD = 5 V, R GS = 5 Ω 5 mj 4 Typ. gate charge V GS = f (Q Gate ) parameter: = 5 pulsed 6 IPD6N3LZ V 75 E S 5 V GS V 5 V V C 85 T j 5 Drainsource breakdown voltage V (BR)DSS = f (T j ) 3 4 nc 6 Q Gate 6 Gate Charge Waveforms V GS =5V, V DS =5V IPD6N3LZ 3.5 V V GS Q G V (BR)DSS V GS(th) 5 Q G Q SW 3.5 Q G(th) C T j Q GS Q GD Rev.. Page 7 33
8 IPD6N3LZ Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. Page 8 33
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OptiMOS &!Power-Transistor Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance %!175 C operating temperature
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