AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used in Hbridge, Inverers and oher applicaions. Feaures nchannel pchannel V DS (V) = 6V 6V I D = 4.A (V GS =V) 3.A (V GS = V) < 6mΩ (V GS =V) < mω (V GS = V) < 77mΩ (V GS =4.V) < 3mΩ (V GS = 4.V) % Rg esed SOIC8 Top View Boom View D D S G S G 3 4 8 7 6 D D D D G S G S Pin SOIC8 nchannel pchannel Absolue Maximum Raings T A = C unless oherwise noed Parameer Symbol Max nchannel Max pchannel Unis DrainSource Volage V DS 6 6 V GaeSource Volage V GS ± ± V Coninuous Drain T A = C 4. 3. Curren A T A =7 C I D 3.6.6 A Pulsed Drain Curren B Power Dissipaion T A = C T A =7 C I DM P D Juncion and Sorage Temperaure Range T J, T STG o o C Thermal Characerisics: nchannel and pchannel Parameer Symbol Typ Max Unis Maximum JuncionoAmbien A s 48 6. C/W R θja Maximum JuncionoAmbien A SeadySae 74 9 C/W Maximum JuncionoLead C SeadySae R θjl 3 4 C/W.8.8 W
AO46 N Channel Elecrical Characerisics (T J = C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis STATIC PARAMETERS BV DSS DrainSource Breakdown Volage I D =µa, V GS =V 6 V I DSS T J = C I GSS GaeBody leakage curren V DS =V, V GS = ±V na V GS(h) Gae Threshold Volage V DS =V GS I D =µa. 3 V I D(ON) On sae drain curren V GS =V, V DS =V A Zero Gae Volage Drain Curren Saic DrainSource OnResisance V DS =48V, V GS =V V GS =V, I D =4.A V GS =4.V, I D =3A T J = C 79 46 6 64 77 mω g FS Forward Transconducance V DS =V, I D =4.A S V SD Diode Forward Volage I S =A,V GS =V.74 V I S Maximum BodyDiode Coninuous Curren 3 A DYNAMIC PARAMETERS C iss Inpu Capaciance 4 4 pf C oss Oupu Capaciance V GS =V, V DS =3V, f=mhz 6 pf C rss Reverse Transfer Capaciance pf R g Gae resisance V GS =V, V DS =V, f=mhz.6 Ω SWITCHING PARAMETERS Q g (V) Toal Gae Charge 8.. nc Q g (4.V) Toal Gae Charge 4.3. nc V GS =V, V DS =3V, I D =4.A Q gs Gae Source Charge.6 nc Q gd Gae Drain Charge. nc D(on) TurnOn DelayTime 4.7 7 ns r TurnOn Rise Time V GS =V, V DS =3V, R L =6.7Ω,.3 4. ns D(off) TurnOff DelayTime R GEN =3Ω.7 4 ns f TurnOff Fall Time.9 4 ns rr Body Diode Reverse Recovery Time I F =4.A, di/d=a/µs 7. 3 ns Q rr Body Diode Reverse Recovery Charge I F =4.A, di/d=a/µs 3 nc A: The value of R θja is measured wih he device mouned on in FR4 board wih oz. Copper, in a sill air environmen wih T A = C. The value in any a given applicaion depends on he user's specific board design. The curren raing is based on he s hermal resisance raing. B: Repeiive raing, pulse widh limied by juncion emperaure. C. The R θja is he sum of he hermal impedence from juncion o lead R θjl and lead o ambien. D. The saic characerisics in Figures o 6 are obained using 8 µs pulses, duy cycle.% max. E. These ess are performed wih he device mouned on in FR4 board wih oz. Copper, in a sill air environmen wih T A = C. The SOA curve provides a single pulse raing. Rev3: Oc µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
AO46 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: NCHANNEL V.V V DS =V I D (A) 4.V 4.V V GS =3.V I D (A) C C 3 4 V DS (Vols) Fig : OnRegion Characerisics. 3 3. 4 4. V GS (Vols) Figure : Transfer Characerisics (mω) 9 8 7 6 4 3 V GS =4.V V GS =V Normalized OnResisance.8.6.4. V GS =V I D =4.A V GS =4.V I D =3.A I D (A) Figure 3: OnResisance vs. Drain Curren and Gae Volage.8 7 7 Temperaure ( C) Figure 4: OnResisance vs. Juncion Temperaure 4.E I D =4.A.E (mω) 8 6 C C I S (A).E.E.E3.E4 C C 4 4 6 8 V GS (Vols) Figure : OnResisance vs. GaeSource Volage.E...4.6.8. V SD (Vols) Figure 6: BodyDiode Characerisics
AO46 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: NCHANNEL V GS (Vols) 8 6 4 V DS =3V I D = 4.A Capaciance (pf) 8 6 4 C oss C rss C iss Q g (nc) Figure 7: GaeCharge Characerisics 3 4 6 V DS (Vols) Figure 8: Capaciance Characerisics.. µs 4 3 T J(Max) = C T A = C I D (Amps)... T J(Max) = C T A = C DC ms ms.s s s. V DS (Vols) Figure 9: Maximum Forward Biased Safe Operaing Area (Noe E) Power (W)... Pulse Widh (s) Figure : Single Pulse Power Raing Junciono Ambien (Noe E) Z θja Normalized Transien Thermal Resisance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =6. C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Widh (s) Figure : Normalized Maximum Transien Thermal Impedance P D T on T
AO46 Gae Charge Tes Circui & Waveform Qg V Qgs Qgd Ig RL Resisive Swiching Tes Circui & Waveforms Charge Rg 9% % d(on) r d(off) f on off Unclamped Inducive Swiching (UIS) Tes Circui & Waveforms L E = / LI AR AR BV DSS Rg Id Id I AR Diode Recovery Tes Circui & Waveforms Q = Id rr Ig Isd L Isd I F di/d I RM rr
AO46 PChannel Elecrical Characerisics (T J = C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis STATIC PARAMETERS BV DSS DrainSource Breakdown Volage I D =µa, V GS =V 6 V I DSS V DS =48V, V GS =V Zero Gae Volage Drain Curren µa T J = C I GSS GaeBody leakage curren V DS =V, V GS =±V ± na V GS(h) Gae Threshold Volage V DS =V GS I D =µa. 3 V I D(ON) On sae drain curren V GS =V, V DS =V A V GS =V, I D =3.A 84 mω Saic DrainSource OnResisance T J = C 4 V GS =4.V, I D =.8A 6 3 mω g FS Forward Transconducance V DS =V, I D =3.A 9 S V SD Diode Forward Volage I S =A,V GS =V.73 V I S Maximum BodyDiode Coninuous Curren 3 A DYNAMIC PARAMETERS C iss Inpu Capaciance 93 pf C oss Oupu Capaciance V GS =V, V DS =3V, f=mhz 8 pf C rss Reverse Transfer Capaciance 3 pf R g Gae resisance V GS =V, V DS =V, f=mhz 7. 9 Ω SWITCHING PARAMETERS Q g (V) Toal Gae Charge (V) 6 nc Q g (4.V) Toal Gae Charge (4.V) 8 nc V GS =V, V DS =3V, I D =3.A Q gs Gae Source Charge. nc Q gd Gae Drain Charge 3. nc D(on) TurnOn DelayTime 8 ns r TurnOn Rise Time V GS =V, V DS =3V, R L =9.4Ω, 3.8 7. ns D(off) TurnOff DelayTime R GEN =3Ω 3. 48 ns f TurnOff Fall Time 7. ns rr Body Diode Reverse Recovery Time I F =3.A, di/d=a/µs 7 3 ns Q rr Body Diode Reverse Recovery Charge I F =3.A, di/d=a/µs 3 nc A: The value of R θja is measured wih he device mouned on in FR4 board wih oz. Copper, in a sill air environmen wih T A = C. The The value value in any in a any given a given applicaion applicaion depends depends on he on user's he user's specific specific board board design. design. The curren The curren raing raing is based is based on he on he s hermal s hermal resisance raing. resisance B: Repeiive raing. raing, pulse widh limied by juncion emperaure. B: C. Repeiive The R θja is raing, he sum pulse of he widh hermal limied impedence by juncion from emperaure. juncion o lead R θjl and lead o ambien. C. D. The Rsaic θja is characerisics he sum of he in hermal Figures impedence o 6,,4 from are juncion obained o using lead R8 θjl µs and pulses, lead duy o ambien. cycle.% max. D. E. These saic ess characerisics are performed in wih Figures he device o 6,,4 mouned are on obained FR4 using board 8 µs wih pulses, oz. duy Copper, cycle in.% a sill max. air environmen wih T A = C. The SOA E. curve These provides ess are a single performed pulse raing. wih he device mouned on in FR4 board wih oz. Copper, in a sill air environmen wih T A = C. The SOA curve provides a single pulse raing. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
AO46 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL 3 V 4.V 4.V V DS =V I D (A) 3.V I D (A) V GS =3.V 3 4 V DS (Vols) Fig : OnRegion Characerisics C C.. 3 3. 4 V GS (Vols) Figure : Transfer Characerisics 3 (mω) 9 8 V GS =4.V V GS =V Normalized OnResisance.8.6.4. I D =3.A V GS =V V GS =4.V I D =.8A 7 4 6 8 I D (A) Figure 3: OnResisance vs. Drain Curren and Gae Volage.8 7 7 Temperaure ( C) Figure 4: OnResisance vs. Juncion Temperaure.E (mω) 8 6 4 C I D =3.A I S (A).E.E.E.E3 C 8 6 C 3 4 6 7 8 9 V GS (Vols) Figure : OnResisance vs. GaeSource Volage.E4.E.E6 C...4.6.8. V SD (Vols) Figure 6: BodyDiode Characerisics
AO46 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL 4 V GS (Vols) 8 6 4 V DS =3V I D =3.A Capaciance (pf) 8 6 4 C oss C iss C rss 4 8 6 Q g (nc) Figure 7: GaeCharge Characerisics 3 4 6 V DS (Vols) Figure 8: Capaciance Characerisics I D (Amps)..... limied T J(Max) = C T A = C s DC µs ms ms.s s. V DS (Vols) Figure 9: Maximum Forward Biased Safe Operaing Area (Noe E) Power (W) 4 3 T J(Max) = C T A = C... Pulse Widh (s) Figure : Single Pulse Power Raing Junciono Ambien (Noe E) Z θja Normalized Transien Thermal Resisance. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =6. C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse P D T on T..... Pulse Widh.(s) Figure : Normalized Maximum Transien Thermal Impedance
AO46 Gae Charge Tes Circui & Waveform Qg V Qgs Qgd Ig Charge RL Resisive Swiching Tes Circui & Waveforms on off d(on) r d(off) f Rg 9% % Id L Unclamped Inducive Swiching (UIS) Tes Circui & Waveforms E = / LI AR AR Rg Id BV DSS I AR Diode Recovery Tes Circui & Waveforms Q = Id rr Ig Isd L Isd I F di/d I RM rr