AOP65 Complementary Enhancement Mode Field Effect Transistor General Description The AOP65/L uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable for a multitude of applications. AOP65 and AOP65L are electrically identical. RoHS Compliant AOP65L is Halogen Free Features nchannel pchannel V DS (V) = 3V 3V I D = 7.5A (V GS = V) 6.6A (V GS = V) < 28mΩ (V GS = V) < 35mΩ (V GS = V) < 43mΩ (V GS = 4.5V) < 58mΩ (V GS = 4.5V) Top View PDIP8 Bottom View D2 D S2 G2 S G 2 3 4 8 7 6 5 PDIP8 D2 D2 D D G2 nchannel S2 G S pchannel Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol Max nchannel Max pchannel Units DrainSource Voltage 3 3 V GateSource Voltage Continuous Drain T A = C Current A T A =7 C Pulsed Drain Current B Power Dissipation T A = C T A =7 C V DS V GS I D I DM P D Junction and Storage Temperature Range T J, T STG 55 to 5 55 to 5 C Thermal Characteristics: nchannel Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 4 5 C/W Maximum JunctiontoAmbient A R θja SteadyState 67 8 C/W Maximum JunctiontoLead C SteadyState R θjl 33 4 C/W Thermal Characteristics: pchannel Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 38 5 C/W R θja Maximum JunctiontoAmbient A SteadyState 66 8 C/W Maximum JunctiontoLead C SteadyState R θjl 3 4 C/W ±2 7.5 6 3 2.5.6 ±2 6.6 5.3 3 2.5.6 V A W Alpha & Omega Semiconductor, Ltd.
AOP65 nchannel MOSFET Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V 3 V I DSS T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±2V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa.8 3 V I D(ON) On state drain current V GS =V, V DS =5V 3 A Zero Gate Voltage Drain Current Static DrainSource OnResistance V DS =24V, V GS =V V GS =V, I D =7.5A V GS =4.5V, I D =6.A T J = 22.6 28 33 43 mω g FS Forward Transconductance V DS =5V, I D =7.5A 2 6 S V SD Body Diode Forward Voltage I S =A, V GS =V.76 V I S Maximum BodyDiodeContinuous Current 4 A DYNAMIC PARAMETERS C iss Input Capacitance 68 82 pf C oss Output Capacitance. V GS =V, V DS =5V, f=mhz 2 pf C rss Reverse Transfer Capacitance 77 pf R g Gate resistance V GS =V, V DS =V, f=mhz.2 2 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 3.84 6.6 nc Q g Total Gate Charge 6.74 8. nc V GS =4.5V, V DS =5V, I D =7.5A Q gs Gate Source Charge.82 nc Q gd Gate Drain Charge 3.2 nc t D(on) TurnOn DelayTime 4.6 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =2.Ω, 4. ns t D(off) TurnOff DelayTime R GEN =6Ω 2.6 ns t f TurnOff Fall Time 5.2 ns t rr Body Diode Reverse Recovery time I F =7.5A, di/dt=a/µs 6.5 2 ns Q rr Body Diode Reverse Recovery charge I F =7.5A, di/dt=a/µs 7.8 nc A: The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A= C. The value in any given application depends on the user's specific board design. The current rating is based on the t B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using 8 µs pulses, duty cycle.5% max. s thermal resistance rating. E. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A= C. The SOA curve provides a single pulse rating. Rev 4 : Jan 29 µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: NCHANNEL I D (A) 3 2 5 5 V 6V 5V 4.5V 3.5V V GS =3V 2 3 4 5 4V V DS (Volts) Fig : OnRegion Characteristics I D (A) 2 6 2 8 4 V DS =5V C.5.5 2 2.5 3 3.5 4 4.5 V GS (Volts) Figure 2: Transfer Characteristics (mω) 6 5 4 3 2 V GS =4.5V V GS =V 5 5 2 I D (Amps) Figure 3: OnResistance vs. Drain Current and Gate Voltage Normalized OnResistance.7.6.5.4.3.2..9.8 I D =7.5A V GS =V V GS =4.5V 5 5 2 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 7.E (mω) 6 5 4 3 2 I D =7.5A 2 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage I S Amps.E.E.E2.E3 C C.E4.E5..2.4.6.8. V SD (Volts) Figure 6: Body diode characteristics
AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: NCHANNEL V GS (Volts) 8 6 4 2 V DS =5V I D =7.5A 2 4 6 8 2 4 Q g (nc) Figure 7: GateCharge characteristics Capacitance (pf) 9 8 7 6 5 4 3 2 C rss C iss C oss f=mhz V GS =V 5 5 2 3 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps). limited ms ms.s µs. V DS (Volts) s s DC T J(Max) =5 C T A = C µs Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power W 4 3 2 T J(Max) =5 C T A = C... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W In descending order D=.5,.3,.,.5,.2,., single pulse Single Pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T
AOP65 Gate Charge Test Circuit & Waveform Qg DUT V Qgs Qgd Ig Charge R L R esistive Sw itching Test C ircuit & W aveform s R g D U T V DC V dd 9% % V gs td(on) t r t d(off) t f t on t off Diode Recovery Test Circuit & W aveform s DUT Q = Idt rr Ig Isd L VD C Vdd Isd I F di/dt I RM t rr Vdd
AOP65 pchannel MOSFET Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V 3 V I DSS V DS =24V, V GS =V Zero Gate Voltage Drain Current µa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa.2 2 2.4 V I D(ON) On state drain current V GS =V, V DS =5V 3 A V GS =V, I D =6.6A 28 35 mω Static DrainSource OnResistance T J = 37 45 V GS =4.5V, I D =5A 44 58 mω g FS Forward Transconductance V DS =5V, I D =6.6A 3 S V SD Diode Forward Voltage I S =A,V GS =V.76 V I S Maximum BodyDiode Continuous Current 4.2 A DYNAMIC PARAMETERS C iss Input Capacitance 92 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 9 pf C rss Reverse Transfer Capacitance 22 pf R g Gate resistance V GS =V, V DS =V, f=mhz 3.6 4.4 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) 8.5 22.2 nc Q g (4.5V) Total Gate Charge (4.5V) 9.6.6 nc V GS =V, V DS =5V, I D =6.6A Q gs Gate Source Charge 2.7 nc Q gd Gate Drain Charge 4.5 nc t D(on) TurnOn DelayTime 7.7 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =2.3Ω, 5.7 ns t D(off) TurnOff DelayTime R GEN =3Ω 2.2 ns t f TurnOff Fall Time 9.5 ns t rr Body Diode Reverse Recovery Time I F =6.6A, di/dt=a/µs 2 24 ns Q rr Body Diode Reverse Recovery Charge I F =6.6A, di/dt=a/µs 8.8 nc A: The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A = C. The value in any a given application depends on on the the user's specific board design. The current rating is is based on on the the t t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,2,4 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A= C. The SOA curve provides a single pulse rating. Rev 4 : Jan 29 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL 3 V 6V 5V 4.5V 3 V DS =5V 2 4V 2 I D (A) 5 3.5V I D (A) 5 5 V GS =3V 2 3 4 5 V DS (Volts) Fig : OnRegion Characteristics 5 C.5.5 2 2.5 3 3.5 4 4.5 5 V GS (Volts) Figure 2: Transfer Characteristics (mω) (mω) 6 55 5 45 4 35 3 2 5 7 65 6 55 5 45 4 35 3 2 V GS =4.5V 5 5 2 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage C V GS =V I D =6.6A 3 4 5 6 7 8 9 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage Normalized OnResistance I S (A).6.4.2..8.E.E.E.E2.E3.E4.E5.E6 I D =6.6A 5 75 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature V GS =V C V GS =4.5V..2.4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics
AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL 8 V DS =5V I D =6.6A 5 C iss V GS (Volts) 6 4 2 Capacitance (pf) 75 5 C oss C rss 4 8 2 6 2 Q g (nc) Figure 7: GateCharge Characteristics 5 5 2 3 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps)... T J(Max) =5 C, T A = C limited s.s s µs µs ms ms DC Power (W) 4 3 2 T J(Max) =5 C T A = C.. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W In descending order D=.5,.3,.,.5,.2,., single pulse Single Pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T
AOP65 Gate Charge Test Circuit & Waveform Qg DUT V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & W aveforms ton toff td(on) t r td(off) t f Rg DUT Vdd 9% % D iod e R ecove ry T est C ircu it & W ave form s V ds D U T V gs Q = Idt rr V ds Ig V gs Isd L V D C V dd Isd V ds I F di/dt I R M t rr V dd