AO688 V Dual NChannel MOSFET General Description The AO688 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable for use as a load switch. It is ESD protected. Product Summary V DS = V (V GS = 4.5V) R DS(ON) = 9mΩ (typical) (V GS = 4.5V) R DS(ON) = mω (typical) (V GS = 4.V) R DS(ON) = mω (typical) (V GS = 3.V) R DS(ON) = 3mΩ (typical) (V GS =.5V) Top View TSOP6 Bottom View Top View D D S D/D 6 5 G G D/D G Pin S 3 4 G S S Absolute Maximum Ratings unless otherwise noted Parameter Symbol Sec Steady State DrainSource Voltage GateSource Voltage Continuous Drain Current A Pulsed Drain Current B Power Dissipation A T A =7 C T A =7 C Junction and Storage Temperature Range V DS V GS ± 6 4.6 4.6 3.7 I DM 6.3.8 T J, T STG.8.5 55 to 5 Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t s 76 95 R θja Maximum JunctiontoAmbient A Steady State 8 5 Maximum JunctiontoLead C Steady State R θjl 54 68 I D P D Units V V A W C Units Rev..: February 4 www.aosmd.com Page of 5
Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PAMETERS BV DSS DrainSource Breakdown Voltage I D = 5µA, V GS = V V V DS = V, V GS = V I DSS Zero Gate Voltage Drain Current µa T J = 55 C 5 I GSS GateBody leakage current V DS = V, V GS = ±V ± µa V GS(th) Gate Threshold Voltage V DS = V GS I D = 5µA.5.75 V I D(ON) On state drain current V GS = 4.5V, V DS = 5V 6 A R DS(ON) Static DrainSource OnResistance V GS = 4.5V, I D = 6.A V GS = 4.V, I D = 5.5A V GS = 3.V, I D = 5A V GS =.5V, I D = A 5 9 3 T J =5 C 7 33 5 5 mω 6 7 mω 7 3 3 mω g FS Forward Transconductance V DS = 5V, I D = 6.A 34 S V SD Diode Forward Voltage I S = A,V GS = V.65 V I S Maximum BodyDiode Continuous Current.3 A DYNAMIC PAMETERS C iss Input Capacitance 6 78 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 5 pf C rss Reverse Transfer Capacitance 64 pf SWITCHING PAMETERS Q g (V) Total Gate Charge 6. nc Q g (4.5V) Total Gate Charge 7.7 nc V GS = V, V DS = V, Q gs Gate Source Charge.5 nc Q gd Gate Drain Charge.7 nc t D(on) TurnOn DelayTime 36 ns t r TurnOn Rise Time V GS =V, V DS =V, R L =.7Ω, 448 ns t D(off) TurnOff DelayTime R GEN =3Ω 9.5 µs t f TurnOff Fall Time 4. µs t rr Body Diode Reverse Recovery Time I F =6A, di/dt=a/µs 5 33 ns Q rr Body Diode Reverse Recovery Charge I F =6A, di/dt=a/µs 9 nc A: The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = 5 C. in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using < 3µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The SOA curve provides a single pulse rating. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS E NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: February 4 www.aosmd.com Page of 5
TYPICAL ELECTRICAL AND THERMAL CHACTERISTICS 6 4.5V 3V 4 V DS = 5V 5 4.5V 3 3 V V GS =.5V 5 C 5 C 3 4 5 Figure : OnRegion Characteristics.5.5.5 3 Figure : Transfer Characteristics 6.6 R DS(ON) (mω) 5 4 3 9 V GS =.5V V GS = 3.V V GS = 4.V V GS = 4.5V 4 8 I F =6.5A, 6 di/dt=a/µs Figure 3: OnResistance vs. Drain Current and Gate Voltage Normalized OnResistance.4...8 V GS = 4.5V 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 55 I D = 6.A E E 45 E 5 C R DS(ON) (mω) 35 E THIS PRODUCT HAS BEEN DESIGNED AND 5 C 5 C QUALIFIED FOR THE CONSUMER E3 MKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS 5 IN LIFE SUPPORT DEVICES OR SYSTEMS E NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ISING E4 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND 5 C RELIABILITY WITHOUT NOTICE. E5 5 E6 3 4 5 6 7 8 9...4.6.8.. Figure 5: OnResistance vs. GateSource Voltage V SD (Volts) Figure 6: BodyDiode Characteristics I S (A) E Rev..: February 4 www.aosmd.com Page of 5
TYPICAL ELECTRICAL AND THERMAL CHACTERISTICS 8 V DS = V 8 6 4 Capacitance (pf) 6 4 C iss C oss 3 6 9 5 8 Q g (nc) Figure 7: GateCharge Characteristics C rss 5 5 Figure 8: Capacitance Characteristics R DS(ON) limited µs T J(Max) =5 C I D (Amps). T J(Max) =5 C DC µs ms ms mss s. I F =6.5A, di/dt=a/µs. Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W).... Pulse Width (s) Figure : Single Pulse Power Rating JunctiontoAmbient (Note E) Z θja Normalized Transient Thermal Resistance. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS E NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ISING OUT OF SUCH.APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, T on FUNCTIONS AND RELIABILITY Single WITHOUT Pulse NOTICE. T. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 In descending order D=.5,.3,.,.5,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance(Note E) P D Rev..: February 4 www.aosmd.com Page of 5
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI BV DSS Rg Id Id I Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: February 4 www.aosmd.com Page of 5