3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions. Produc Summary V DS 3V I D (a V GS =V) 5A R DS(ON) (a V GS =V) R DS(ON) (a V GS = 4.5V) < 5mΩ < 87mΩ % UIS Tesed % R g Tesed SOIC8 Top View Boom View Top View D D S G S G 8 7 3 6 4 5 D D D D G G Pin S S Absolue Maximum Raings unless oherwise noed Parameer Symbol Maximum DrainSource Volage 3 GaeSource Volage Coninuous Drain Curren Pulsed Drain Curren C T A =7 C Avalanche Curren C Avalanche energy L=.mH C I AS, I AR E AS, E AR 7 4 P Power Dissipaion B D T A =7 C.3 V DS V GS I D 5 4. I DM Juncion and Sorage Temperaure Range T J, T STG 55 o 5 C ± 3 Unis V V A A mj W Thermal Characerisics Parameer Symbol Typ Max Maximum JuncionoAmbien A s 48 6.5 Maximum JuncionoAmbien A D R θja SeadySae 74 Maximum JuncionoLead SeadySae 35 R θjl Unis C/W C/W C/W Rev 7: Nov www.aosmd.com Page of 6
Elecrical Characerisics (T J =5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis STATIC PARAMETERS BV DSS DrainSource Breakdown Volage I D =5µA, V GS =V 3 V V DS =3V, V GS =V I DSS Zero Gae Volage Drain Curren µa T J =55 C 5 I GSS GaeBody leakage curren V DS =V, V GS = ±V ± na V GS(h) Gae Threshold Volage V DS =V GS I D =5µA.4.9.4 V I D(ON) On sae drain curren V GS =V, V DS =5V 3 A R DS(ON) Saic DrainSource OnResisance V GS =V, I D =5A V GS =4.5V, I D =4A 3 5 T J =5 C 48 7 5 87 mω g FS Forward Transconducance V DS =5V, I D =5A 3 S V SD Diode Forward Volage I S =A,V GS =V.7 V I S Maximum BodyDiode Coninuous Curren.5 A DYNAMIC PARAMETERS C iss Inpu Capaciance 5 pf C oss Oupu Capaciance V GS =V, V DS =5V, f=mhz pf C rss Reverse Transfer Capaciance 65 pf R g Gae resisance V GS =V, V DS =V, f=mhz 3.5 7.5.5 Ω SWITCHING PARAMETERS Q g (V) Toal Gae Charge 9. nc Q g (4.5V) Toal Gae Charge 4.6 6 nc V GS =V, V DS =5V, I D =5A Q gs Gae Source Charge.6 nc Q gd Gae Drain Charge. nc D(on) TurnOn DelayTime 7.5 ns r TurnOn Rise Time V GS =V, V DS =5V, R L =3Ω, Ω 5.5 ns D(off) TurnOff DelayTime R GEN =3Ω 9 ns f TurnOff Fall Time 7 ns rr Body Diode Reverse Recovery Time I F =5A, di/d=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =5A, di/d=a/µs 5.3 nc A. The value of R θja is measured wih he device mouned on in FR4 board wih oz. Copper, in a sill air environmen wih. The value in any given applicaion depends on he user's specific board design. B. The power dissipaion P D is based on T J(MAX) =5 C, using s juncionoambien hermal resisance. C. Repeiive raing, pulse widh limied by juncion emperaure T J(MAX) =5 C. Raings are based on low frequency and duy cycles o keep iniialt J =5 C. D. The R θja is he sum of he hermal impedence from juncion o lead R θjl and lead o ambien. E. The saic characerisics in Figures o 6 are obained using <3µs pulses, duy cycle.5% max. F. These curves are based on he juncionoambien hermal impedence which is measured wih he device mouned on in FR4 board wih oz. Copper, assuming a maximum juncion emperaure of T J(MAX) =5 C. The SOA curve provides a single pulse raing. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: Nov www.aosmd.com Page of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 3 5 V 8V 6V 5V 3 5 V DS =5V I D (A) 5 5 V GS =4.5V 4V V GS =3.5V I D (A) 5 5 5 C 5 C 3 4 5 V DS (Vols) Fig : OnRegion Characerisics (Noe E).5.5.5 3 3.5 4 4.5 5 5.5 V GS (Vols) Figure : Transfer Characerisics (Noe E) 8.8 R DS(ON) (mω) 7 6 5 3 V GS =4.5V V GS =V Normalized OnResisance.6.4. V GS =V I D =5A 7 5 V GS =4.5V I D =4A 4 6 8 I D (A) Figure 3: OnResisance vs. Drain Curren and Gae Volage (Noe E).8 5 5 75 5 5 75 Temperaure ( C) Figure 4: OnResisance vs. Juncion 8 Temperaure (Noe E).E I D =5A.E.E R DS(ON) (mω) 8 6 5 C I S (A).E.E.E3 5 C 5 C 5 C 4 6 8 V GS (Vols) Figure 5: OnResisance vs. GaeSource Volage (Noe E).E4.E5...4.6.8.. V SD (Vols) Figure 6: BodyDiode Characerisics (Noe E) Rev 7: Nov www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z θja Normalized Transien Thermal Resisance D=T on /T In descending order T J,PK =T A P DM.Z θja.r θja D=.5,.3,.,.5,.,., single pulse R θja = C/W... Single Pulse..... Pulse Widh (s) Figure : Normalized Maximum Transien Thermal Impedance (Noe F) P D T on T Rev 7: Nov www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =5V I D =5A 8 7 6 C iss V GS (Vols) 6 4 Capaciance (pf) 5 3 C oss 4 6 8 Q g (nc) Figure 7: GaeCharge Characerisics C rss 5 5 5 3 V DS (Vols) Figure 8: Capaciance Characerisics I AR (A) Peak Avalanche Curren.. T A =5 C T A = C T A =5 C I D (Amps).... R DS(ON) limied T J(Max) =5 C DC µs µs ms ms s. Time in avalanche, A (µs) Figure 9: Single Pulse Avalanche capabiliy (Noe C)... V DS (Vols) Figure : Maximum Forward Biased Safe Operaing Area (Noe F) Power (W)... Pulse Widh (s) Figure : Single Pulse Power Raing JuncionoAmbien (Noe F) Rev 7: Nov www.aosmd.com Page 5 of 6
Gae Charge Tes Circui & Waveform Qg V Qgs Qgd Ig Charge RL Resisive Swiching Tes Circui & Waveforms on off d(on) r d(off) f Rg 9% % Id L Unclamped Inducive Swiching (UIS) Tes Circui & Waveforms E = / LI AR AR Rg Id BV DSS I AR Diode Recovery Tes Circui & Waveforms Q = Id rr Ig Isd L Isd I F di/d I RM rr Rev 7: Nov www.aosmd.com Page 6 of 6