Chapter 4 Resonant circuits
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1 hate esnant iuits. Seies esnant iuits steady state esnse fat haf e fequenies ut imedane. Paae esnant iuits steady state esnse ut imedane aded extena.3 Tansfme ued iuits equivaent esnat iuit. Tansmiss e esnant iuits sht-iuited λ/ and λ/ es en-iuited λ/ and λ/ es.5 Miave esnats egua avity iua ydia avity dieeti esnat - 微波工程講義
2 . Seies esnant iuits Basis. esnat aiats: fite fequeny seetive mnents amifie and siat imedane sfme mathg eement.. Steady state esnse - t v v t V W W P P W W V V A e m ss ss e m e ss aveage sted enegy quaity fat esnant fequeny ω
3 3. Haf e fequenies. nut imedane nea esnane [ ] A A ssy esnat ssess esnat by ettg 微波工程講義 -3
4 - Disuss. Deivat f haf e fequenies equat V V A ±
5 -5 3. Ex.. A seies iuit asses signas fm 9MHz t MHz and is nneted t a mmuniat system ith 50Ω. F uh MHz f f f ω ω 0 ω 3dB BW. X and X at haf e fequenies
6 -6. Paae esnant iuits Basis. Duaity ith seies esnat: V G. Steady state esnse V W V W V P P W W A e m ss ss e m fat quaity fequeny esnant / ω t i i t
7 -7 3. nut imedane nea esnane } ] [ { ] [ ] [ ] [ ] [ ssy esnat ssess esnat by ettg
8 -8 Disuss. Y GB and GB at haf e fequenies ω ω 0 ω 3dB BW. Unaded u aded extena e esnant iuit f aae esnant iuit f seies e U e ω ω esnat u
9 3. esnat eats u e Seies esnat e U Paae esnat -9 微波工程講義
10 . Ex.. A aae esnat ith 0kΩ 0uH 0F and its ad 00kΩ u u e 8 ad / se 微波工程講義
11 .3 Tansfme-ued iuits Basis. Equivaent iuit V nv n V M V M V ξ ξ n V ξ n n ξ ξ M n n ξ M nm ξ n ξ ξ M : effiien t f ug ξ S n V s V S ξ V s V n : V n / ξ n : V - 微波工程講義
12 Disuss. Ex..3 A tighty ued sfme iuit equivaent esnat iuit ξ n 30 0 n Y n 6.5k MΩ F 6 30nH f ξ 99.97MHz s 975 s 30nH 0nH 6F 30.7F 6.5kΩ n: - 微波工程講義
13 . Ex.. A dube-tuned sfme-ued iuit equivaent iuit a and as emved b / s ith a ithut b ith s s ξ nv ξ n V [ nv ξ ] n n [ s ξ n ξ -3 s V ] V V ξ ξ ξ / n nv n: V : fu es 微波工程講義
14 - f ] [ 0 as n n s s ξ ξ ξ ξ ξ
15 -5. Tansmiss e esnant iuits Basis. Sht-iuited e t e ss 0 λ λ λ λ γ γ γ v v v
16 -6. λ/ sht-iuited eseies esnat λ aametes iuit equivaent esnat f seies 3. λ/ sht-iuited eaae esnat λ aametes iuit equivaent esnat f aae i
17 -7 e ss λ λ γ γ γ. Oen-iuited e 5. λ/ en-iuited eaae esnat λ aametes iuit equivaent esnat f aae
18 -8 6. λ/ en-iuited eseies esnat λ aametes iuit equivaent esnat f seies
19 Disuss. Ex..5 A axia λ/ sht-iuited e has ne ndut adius a0.55mm ute ndut adius b.99mm at 5GHz f ai dieeti and Tefn dieeti ε µ e s 7 σ d µ εε s n b a a N / m ai N/m Tefn f ε 0.7 ad/m ai 5.03 ad/m Tefn 89 ai 657 Tefn b 0 ai µ ε ε 0. 03N/m Tefn Ω 微波工程講義
20 . Ex..6 A 50Ω misti λ/ sht-iuited e has Tefn substate ε ith thikness h0.59m t0.59um and at GHz ε ε.08 λ f 50Ω h ε 5.6m.08 σ m 0.5m h 0.59m ε.08 A.8 d f GHz 56ad / m λ S / m f A.930 A. 0.5m h 0.59m t 0.59um e GHz 0.5m ε e.79 A N 0.08 N / m / m -0 微波工程講義
21 -.5 Miave esnats Basis. egua avities dimens a b ε µ µε µε 60 mde 0 3 fequeny esnant mde d s e mn mn a a b b a a b P W TE b n a m f TM TE. iua ydia avities χ µε mde.5. mde Tabe : x J' f mth ze : ' de n and fist kd the f x J funt Besse the f mth ze : mde ' mde n n d nm nm nm nm nm nm nm nm nm TM TE TE TM h f
22 3. Dieeti esnat D: high ε temeatue effiient TE 0 mde 3 f 3.5 GHz TE0 mde h ε h Disuss. Ex..7 A egua avity made f W-90 esnates at 9.379GHz TE 0 mde ength and W 90aveguide a m b 0..06m TE 0 mde µε Ex..8 A egua avity ith a.6m b0.7m.56m is fied ith Tefn TE 0 mde f and f µε d GHz d.38m 06 微波工程講義
23 3. Ex..9 A ydia avity is eated at 5GHz TE 0 mde and height h h χ ' f ε s 8 µε > > f ε.5.7 ~.5.3 h. D seet the eat ith misti e 5. Ex..0 D e36 substate es9.9 t0.5mmd dimenss f 35GHz m h 0.079m.7mm > > mm H #3due eeks ~.5.3 h 0.668mm 5 8 ε s ε d D h t 3- 微波工程講義
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