High Voltage, Input Rectifier Diode, 20 A

Transcription

1 VS-ETS..-M3, VS-TS..-M3 High Voltage, Input Retifier Diode, 3 L TO-C Base athode 3 Cathode node VS-ETS.. 3 PRIMRY CHRCTERISTICS 3L TO-B Cathode to base 3 node node VS-TS.. I F(V) V R 8 V, V V F at I F. V I FSM 3 T J max. 5 C Pakage L TO-C, 3L TO-B Ciruit onfiguration Single, ommon anode FETURES Very low forward voltage drop 5 C max. operating juntion temperature Glass passivated pellet hip juntion Designed and qualified aording to JEDEC -JESD 47 Material ategorization: for definitions of ompliane please see PPLICTIONS Input retifiation swithes and output retifiers whih are available in idential pakage outlines DESCRIPTION High voltage retifiers optimized for very low forward voltage drop with moderate leakage. These devies are intended for use in main retifiation (single or three phase bridge). OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE BRIDGE THREE-PHSE BRIDGE UNITS Capaitive input filter T = 55 C, T J = 5 C ommon heatsink of C/W 6.3 MJOR RTINGS ND CHRCTERISTICS CHRCTERISTICS VLUES UNITS I F(V) Sinusoidal waveform V RRM 8, V I FSM 3 V F, T J = 5 C. V T J -4 to +5 C VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-ETS8-M3, VS-TS8-M3 8 9 VS-ETS-M3, VS-TS-M3 3 I RRM T 5 C m Revision: 3-Nov-7 Doument Number: 9644 For tehnial questions within your region: Diodesmerias@vishay.om, Diodessia@vishay.om, DiodesEurope@vishay.om THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

2 VS-ETS..-M3, VS-TS..-M3 BSOLUTE MXIMUM RTINGS PRMETER TEST CONDITIONS VLUES UNITS Maximum average forward urrent I F(V) T C = 5 C, 8 ondution half sine wave Maximum peak one yle ms sine pulse, rated V RRM applied 5 I FSM non-repetitive surge urrent ms sine pulse, no voltage reapplied 3 Maximum I t for fusing I ms sine pulse, rated V RRM applied 36 t s ms sine pulse, no voltage reapplied 44 Maximum I t for fusing I t t =. ms to ms, no voltage reapplied 44 s ELECTRICL SPECIFICTIONS PRMETER TEST CONDITIONS VLUES UNITS Maximum forward voltage drop V FM, T J = 5 C. V Forward slope resistane r t.4 m T J = 5 C Threshold voltage V F(TO).85 V T J = 5 C. Maximum reverse leakage urrent I RM V R = Rated V RRM T J = 5 C. m THERML - MECHNICL SPECIFICTIONS PRMETER TEST CONDITIONS VLUES UNITS Maximum juntion and storage temperature range T J, T Stg -4 to +5 C Maximum thermal resistane, juntion to ase R thjc DC operation.3 Typial thermal resistane, ase to heatsink R thcs Mounting surfae, smooth, and greased.5 C/W pproximate weight Mounting torque Marking devie g.7 oz. minimum 6 (5) kgf m maximum () (lbf in) Case style L TO-C Case style 3L TO-B ETS8 ETS TS8 TS Maximum llowable Case Temperature ( C) R thjc (DC) =.3 C/W 3 Condution angle Maximum llowable Case Temperature ( C) R thjc (DC) =.3 C/W Condution period DC verage Forward Current () verage Forward Current () Fig. - Current Rating Charateristis Fig. - Current Rating Charateristis Revision: 3-Nov-7 Doument Number: 9644 For tehnial questions within your region: Diodesmerias@vishay.om, Diodessia@vishay.om, DiodesEurope@vishay.om THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

3 VS-ETS..-M3, VS-TS..-M3 Maxiumum verage Forward Power Loss (W) RMS limit Condution angle T J = 5 C Peak Half Sine Wave Forward Current () t any rated load ondition and with rated V RRM applied following surge. Initial T J = 5 C at 6 Hz.83 s at 5 Hz. s verage Forward Current () 5 Number of Equal mplitude Half Cyle Current Pulse (N) Fig. 3 - Forward Power Loss Charateristis Fig. 5 - Maximum Non-Repetitive Surge Current Maxiumum verage Forward Power Loss (W) DC T J = 5 C RMS limit Condution period Peak Half Sine Wave Forward Current () Maximum non-repetitive surge urrent versus pulse train duration. Initial T J = 5 C No voltage reapplied Rated V RRM reapplied.. verage Forward Current () Pulse Train Duration (s) Fig. 4 - Forward Power Loss Charateristis Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current () T J = 5 C T J = 5 C Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Charateristis Revision: 3-Nov-7 3 Doument Number: 9644 For tehnial questions within your region: Diodesmerias@vishay.om, Diodessia@vishay.om, DiodesEurope@vishay.om THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

4 VS-ETS..-M3, VS-TS..-M3 Z thjc - Transient Thermal Impedane ( C/W). Single pulse D =.5 D =.33 D =.5 D =.7 D =.8 Steady state value (DC operation)..... Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedane Z thjc Charateristis ORDERING INFORMTION TBLE Devie ode VS- E T S -M produt - Current rating ( = ) 3 - Ciruit onfiguration: E = L TO-C = 3L TO-B Pakage: T = TO- Type of silion: S = standard reovery retifier 8 = 8 V 6 - Voltage ode x = V RRM = V 7 - Environmental digit: -M3 = halogen-free, RoHS-ompliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-ETS8-M3 5 ntistati plasti tubes VS-TS8-M3 5 ntistati plasti tubes VS-ETS-M3 5 ntistati plasti tubes VS-TS-M3 5 ntistati plasti tubes Dimensions Part marking information SPICE model LINKS TO RELTED DOCUMENTS L TO-C 3L TO-B L TO-C 3L TO-B Revision: 3-Nov-7 4 Doument Number: 9644 For tehnial questions within your region: Diodesmerias@vishay.om, Diodessia@vishay.om, DiodesEurope@vishay.om THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

5 DIMENSIONS in millimeters and inhes 3L TO-B Outline Dimensions Q E P.4 M B M H (7) B (H) (E) Thermal pad 3 D D C C L () D D D 3 x b 3 x b L C E Base metal (b, b) Plating.5 M B M x e e View - (4) (4) b, b3 Setion C - C and D - D Lead tip Conforms to JEDEC outline TO-B MIN. MX. MIN. MX. MIN. MX. MIN. MX D E , E b e b e b H , 7 b L L P D Q D Notes () Dimensioning and toleraning as per SME Y4.5M-994 () Lead dimension and finish unontrolled in L (3) Dimension D, D, and E do not inlude mold flash. Mold flash shall not exeed.7 mm (.5") per side. These dimensions are measured at the outermost extremes of the plasti body (4) Dimension b, b3, and apply to base metal only (5) Controlling dimensions: inhes Thermal pad ontour optional within dimensions E, H, D, and E (7) Outline onforms to JEDEC TO-, exept D (minimum) Revision: 3-ug-7 Doument Number: 9654 For tehnial questions within your region: Diodesmerias@vishay.om, Diodessia@vishay.om, DiodesEurope@vishay.om THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

6 DIMENSIONS in millimeters and inhes L TO-C Outline Dimensions Q E P.4 M B M H (7) B (H) (E) Thermal pad D C C D L () D D D x b x b L C E Base metal (b, b) Plating.5 M B M x e e View - (4) (4) b, b3 Setion C - C and D - D Lead tip Conforms to JEDEC outline TO-C MIN. MX. MIN. MX. MIN. MX. MIN. MX D E , E b e b e b H , 7 b L L P D Q D Notes () Dimensioning and toleraning as per SME Y4.5M-994 () Lead dimension and finish unontrolled in L (3) Dimension D, D, and E do not inlude mold flash. Mold flash shall not exeed.7 mm (.5") per side. These dimensions are measured at the outermost extremes of the plasti body (4) Dimension b, b3, and apply to base metal only (5) Controlling dimensions: inhes Thermal pad ontour optional within dimensions E, H, D, and E (7) Outline onforms to JEDEC TO-, exept D (minimum) Revision: 6-De-7 Doument Number: 9656 For tehnial questions within your region: Diodesmerias@vishay.om, Diodessia@vishay.om, DiodesEurope@vishay.om THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

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