Hyperfast Rectifier, 30 A FRED Pt
|
|
- Sybil Morton
- 6 years ago
- Views:
Transcription
1 VS-PH3006-F3, VS-PH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 Hyperfast Rectifier, 30 FRE Pt FETURES Low forward voltage drop Hyperfast soft recovery time 75 operating junction temperature TO-247 Base cathode 4, TO-247 modified Base cathode 2 3 esigned and qualified according to JEE -JES 47 Material categorization: for definitions of compliance please see /doc?9992 vailable 3 node node VS-PH3006-F3 VS-PH3006-N3 PROUT SUMMRY 3 athode node VS-EPH3006-F3 VS-EPH3006-N3 Package TO-247, TO-247 modified (2 pins) I F(V) 30 V R 600 V V F at I F.4 V t rr typ. 27 ns T J max. 75 iode variation Single die ESRIPTION / PPLITIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PF Boost stage in the / section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONITIONS MX. UNITS Repetitive peak reverse voltage V RRM 600 V verage rectified forward current I F(V) T = 2 30 Non-repetitive peak surge current I FSM T = Operating junction and storage temperatures T J, T Stg -65 to +75 ELETRIL SPEIFITIONS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 00 μ I F = Forward voltage V F I F = 30, T J = V R = V R rated Reverse leakage current I R T J = 50, V R = V R rated μ Junction capacitance T V R = 600 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Revision: 08-Jul-5 ocument Number: 9357 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?9000
2 VS-PH3006-F3, VS-PH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 Reverse recovery time t rr YNMI REOVERY HRTERISTIS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS T J = ns I F =, di F /dt = 50 /μs, V R = 30 V T J = Peak recovery current I RRM I F = 30 T J = di F /dt = 200 /μs T J = V R = 200 V T J = Reverse recovery charge Q rr T J = n THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg Thermal resistance, junction to case R thj /W Thermal resistance, junction to ambient per leg R thj Typical socket mount Thermal resistance, case to heatsink R ths Mounting surface, flat, smooth and greased Weight Mounting torque Marking device ase style TO-247 ase style TO-247 modified g oz..2 (0) - PH3006 EPH (20) kgf cm (lbf in) Revision: 08-Jul-5 2 ocument Number: 9357 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?9000
3 VS-PH3006-F3, VS-PH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 I F - Instantaneous Forward urrent () T J = 75 T J = 25 T J = Reverse urrent - I R (μ) V FM - Forward Voltage rop (V) Reverse Voltage - V R (V) Fig. - Typical Forward Voltage rop haracteristics Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage 000 Junction apacitance - T (pf) Reverse Voltage - V R (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage 0 Thermal Impedance Z thj ( /W) 0. = 0.5 = 0.2 = 0. = 0.05 = 0.02 = 0.0 Single Pulse (Thermal Resistance) 0.0 E-05 E-04 E-03 E-02 E-0 E+00 t, Rectangular Pulse uration (s) Fig. 4 - Max. Thermal Impedance Z thj haracteristics Revision: 08-Jul-5 3 ocument Number: 9357 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?9000
4 VS-PH3006-F3, VS-PH3006-N3, VS-EPH3006-F3, VS-EPH3006-N llowable ase Temperature ( ) verage Power Loss (W) RMS Limit = 0.0 = 0.02 = 0.05 = 0. = 0.2 = verage Forward urrent - I F(V) () Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent verage Forward urrent - I F(V) () Fig. 6 - Forward Power Loss haracteristics t rr (ns) I F = 30, 25 Q rr (n) I F = 30, I F = 30, typical value I F = 30, 25 0 typical value di F /dt (/μs) di F /dt (/μs) Fig. 7 - Typical Reverse Recovery vs. di F /dt Fig. 8 - Typical Stored harge vs. di F /dt V R = 200 V 0.0 Ω L = 70 μh.u.t. di F /dt adjust G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test ircuit Revision: 08-Jul-5 4 ocument Number: 9357 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?9000
5 VS-PH3006-F3, VS-PH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 (3) 0 I F t a t rr tb (2) I RRM Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr ORERING INFORMTION TBLE Fig. 0 - Reverse Recovery Waveform and efinitions evice code VS- E P H F product 2 - Ultrafast MUR series = single diode E = single diode (modified) 3 - P = TO H = hyperfast recovery time 5 - urrent code (30 = 30 ) 6 - Voltage code (06 = 600 V) 7 - Environmental digit: -F3 = RoHS-compliant and totally lead (Pb)-free -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORERING INFORMTION (Example) PREFERRE P/N QUNTITY PER TUBE MINIMUM ORER QUNTITY PKGING ESRIPTION VS-PH3006-F ntistatic plastic tube VS-PH3006-N ntistatic plastic tube VS-EPH3006-F ntistatic plastic tube VS-EPH3006-N ntistatic plastic tube imensions Part marking information LINKS TO RELTE OUMENTS TO-247 TO-247 modified TO-247 TO-247 modified /doc?95542 /doc?9554 /doc?95007 /doc?95442 Revision: 08-Jul-5 5 ocument Number: 9357 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?9000
6 IMENSIONS in millimeters and inches TO-247 modified - 50 mils L/F Outline imensions B (2) R/2 Q (3) E S 2 (6) Ø P (atum B) Ø K M B M Ø P 2 2 x R (2) 2 3 Thermal pad 4 (5) L L See view B E 2 x b2 3 x b 0.0 M M b4 2 x e View - Plating (b, b3, b5) Base metal E E (c) c (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E E b e 5.46 BS 0.25 BS b Ø K b L b L b Ø P b Ø P c Q c R S 5.5 BS 0.27 BS Notes () imensioning and tolerance per SME Y4.5M-994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (0.54") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 20-pr-7 ocument Number: 9554 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?9000
7 TO mils L/F Outline imensions IMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 Ø K M B M (6) Φ P (atum B) 2 Φ P 2 x R (2) 2 3 Thermal pad 4 (5) L L See view B E 0.0 M B M 2 x b2 3 x b 0.0 M M b4 2 x e View - Plating (b, b3, b5) Base metal E E (c) c (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E E b e 5.46 BS 0.25 BS b Ø K b L b L b Ø P b Ø P c Q c R S 5.5 BS 0.27 BS Notes () imensioning and tolerancing per SME Y4.5M-994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (0.54") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 20-pr-7 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?9000
8 Legal isclaimer Notice Vishay isclaimer LL PROUT, PROUT SPEIFITIONS N T RE SUBJET TO HNGE WITHOUT NOTIE TO IMPROVE RELIBILITY, FUNTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHY INTERTEHNOLOGY, IN. LL RIGHTS RESERVE Revision: 08-Feb-7 ocument Number: 9000
Ultrafast Soft Recovery Diode, 60 A FRED Pt
VS-60EPU06PbF, VS-60EPU06-N3, VS-60PU06PbF, VS-60PU06-N3 Ultrafast Soft Recovery iode, 60 FRE Pt TO-247 modified athode to base 2 1 3 athode node VS-60EPU06PbF VS-60EPU06-N3 PROUT SUMMRY TO-247 athode
More informationUltrafast Soft Recovery Diode, 60 A FRED Pt
VS-60EPU02PbF, VS-60EPU02-N3, VS-60PU02PbF, VS-60PU02-N3 Ultrafast Soft Recovery iode, 60 FRE Pt FETURES Ultrafast recovery time TO-247 modified Base common cathode 2 TO-247 Base common cathode 2 Low forward
More informationUltrafast Rectifier, 2 x 15 A FRED Pt
Ultrafast Rectifier, x 5 FRED Pt ommon cathode, Base FETURES Ultrafast recovery time Low forward voltage drop 75 operating junction temperature 3 TO-47 3L node 3 node Low leakage current Designed and qualified
More informationUltrafast Soft Recovery Diode, 60 A FRED Pt
Ultrafast Soft Recovery Diode, 60 FRED Pt FETURES Ultrafast recovery time 3 2 TO-247D 2L athode to base 2 3 athode node Low forward voltage drop 75 operating junction temperature Designed and qualified
More informationUltrafast Rectifier, 2 x 30 A FRED Pt
Ultrafast Rectifier, x 30 FRED Pt TO-47 PRODUT SUMMRY node Base common cathode 3 ommon cathode node Package TO-47 I F(V) x 30 V R 400 V V F at I F 0.9 V t rr typ. 37 ns T J max. 75 Diode variation ommon
More informationUltrafast Soft Recovery Diode, 60 A FRED Pt
VS-60EPU04PbF, VS-60EPU04-N3, VS-60PU04PbF, Ultrafast Soft Recovery iode, 60 FRE Pt FETURES Ultrafast recovery time Low forward voltage drop 175 operating junction temperature TO-247 modified TO-247 esigned
More informationVS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors. FEATURES DESCRIPTION / APPLICATIONS
Ultralow V F Ultrafast Rectifier, 5 FRED Pt FETURES TO-252 (D-PK) N/ 2, 4 3 node Ultrafast recovery time, extremely low V F and soft recovery 75 maximum operating junction temperature For PF DM operation
More informationHyper Fast Rectifier, 8 A FRED Pt
Hyper Fast Rectifier, 8 FRED Pt 2 3 DPK (TO-252) N/ 2, 3 node PRIMRY HRTERISTIS Package DPK (TO-252) I F(V) 8 V R 600 V V F at I F.3 V t rr (typ.) 8 ns T J max. 75 ircuit configuration Single die FETURES
More informationHyperfast Rectifier, 2 x 15 A FRED Pt
Hyperfast Rectifier, 2 x 5 FRED Pt 3L TO-220B PRIMRY CHRCTERISTICS Base common cathode 2 2 Common node cathode node 3 Package 3L TO-220B I F(V) 2 x 5 V R 300 V V F at I F 0.85 V t rr typ. See Recovery
More informationUltrafast Rectifier, 2 x 15 A FRED Pt
Ultrafast Rectifier, x 5 FRED Pt TO-47C PRODUCT SUMMRY 3 node Base common cathode 3 Common cathode node Package TO-47C I F(V) x 5 V R 00 V V F at I F 0.85 V t rr typ. See Recovery table T J max. 75 C Diode
More informationFEATURES DESCRIPTION APPLICATIONS
Ultralow V F Hyperfast Rectifier for Discontinuous Mode PFC, 5 FRED Pt 3 2L TO-22C 2 FETURES Hyperfast recovery time Benchmark ultralow forward voltage drop 75 C operating junction temperature Low leakage
More informationUltrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES State of the art low forward voltage drop Ultrafast recovery time 75 C operating junction temperature Low leakage current
More informationUltrafast Rectifier, 16 A FRED Pt
Ultrafast Rectifier, 6 FRED Pt 4 TO-220B 2 3 Base common cathode 4 2 Common node cathode node 3 FETURES Ultrafast recovery time Low forward voltage drop 75 C operating junction temperature Low leakage
More informationHyperfast Rectifier, 8 A FRED Pt
Hyperfast Rectifier, 8 A FRED Pt L TO-0 FullPAK Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8 A V R 600 V V F at I F.3 V t rr typ. 8 ns T J max. 75 C Package L TO-0 FullPAK Circuit configuration Single
More informationVS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY
HEXFRED Ultrafast Soft Recovery Diode, 8 2, 4 FETURES Ultrafast recovery time Ultrasoft recovery Very low I RRM 3 TO-252 (D-PK) N/C node PRODUCT SUMMRY Package TO-252 (D-PK) I F(V) 8 V R 600 V V F at I
More informationHyperfast Rectifier, 30 A FRED Pt
VS-30ETH06SPbF, VS-30ETH06-PbF Hyperfast Rectifier, 30 FRED Pt FETURES Hyperfast recovery time Low forward voltage drop 3 D PK (TO-63) ase cathode 3 TO-6 Low leakage current 75 C operating junction temperature
More informationUltrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt TO-63 (D PK) ase cathode 1 3 N/C node VS-8ETU04SHM3 PRODUCT SUMMRY N/C TO-6 1 3 node Package TO-63 (D PK), TO-6 I F(V) 8 V R 400 V V F at I F 0.94 V t rr typ. 35 ns T J max.
More informationHyperfast Rectifier, 8 A FRED Pt
Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES Hyperfast soft recovery time Low forward voltage drop 75 C operating junction temperature Low leakage
More informationFEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
More informationUltrafast Rectifier, 30 A FRED Pt
VS-ETU3006S-M3, VS-ETU3006--M3 Ultrafast Rectifier, 30 FRED Pt FETURES Low forward voltage drop Ultrafast recovery time 3 D PK (TO-63) ase cathode 3 TO-6 75 C operating junction temperature Low leakage
More informationHyperfast Rectifier, 30 A FRED Pt
VS-30CTH0S-M3, VS-30CTH0--M3 Hyperfast Rectifier, 30 FRED Pt 3 D PK (TO-63) ase Common Cathode Common Cathode 3 node node VS-30CTH0S-M3 3 PRIMRY CHRCTERISTICS TO-6 ase Common Cathode Common Cathode 3 node
More informationHyperfast Rectifier, 1 A FRED Pt
Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low
More informationHyperfast Rectifier, 2 x 15 A FRED Pt
Hyperfast Rectifier, x 5 FRED Pt VS-30CTH0SPbF ase Common Cathode Common Cathode 3 node node D PK PRODUCT SUMMRY t rr (maximum) I F(V) V R VS-30CTH0-PbF ase Common Cathode Common Cathode 3 node node TO-6
More informationUltrafast Rectifier, 8 A FRED Pt
8 FRED Pt VS-8ETU04SPbF N/C ase cathode 1 3 D PK PRODUCT SUMMRY t rr I F(V) V R node VS-8ETU04-1PbF 1 3 N/C node TO-6 60 ns 8 400 V FETURES Ultrafast recovery time Low forward voltage drop Low leakage
More informationUltrafast Rectifier, 8 A FRED Pt
VS-8ETU04S-M3, VS-8ETU04-1-M3 Ultrafast Rectifier, 8 FRED Pt 1 3 D PK (TO-63) ase cathode 1 3 N/C node VS-8ETU04S-M3 1 3 PRIMRY CHRCTERISTICS TO-6 N/C 1 3 node I F(V) 8 V R 400 V V F at I F 0.94 V t rr
More informationUltrafast Rectifier, 2 x 8 A FRED Pt
VS-MUR60CT-M3, VS-MUR60CT--M3 Ultrafast Rectifier, x 8 FRED Pt 3 D PK (TO-63) node ase common cathode 3 Common cathode node VS-MUR60CT-M3 3 node PRIMRY CHRCTERISTICS TO-6 ase common cathode 3 Common cathode
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationSmall Signal Schottky Diode FlipKY Gen 2
Small Signal Schottky Diode FlipKY Gen 2 MECHNICL DT Case: CLP0603-2M X FETURES Schottky diode for high-speed switching Very low dimensions: 0.6 mm x 0.3 mm x 0.29 mm 0.2 forward current Low forward voltage
More informationSingle Phase Fast Recovery Bridge (Power Modules), 61 A
VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height
More informationHigh Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High
More informationDual High-Voltage Trench MOS Barrier Schottky Rectifier
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50
More informationV30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low
More informationDual Low-Voltage Trench MOS Barrier Schottky Rectifier
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology
More informationV20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7
More informationSmall Signal Fast Switching Diode FEATURES
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching
More informationHigh Voltage Trench MOS Barrier Schottky Rectifier
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00
More informationSmall Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
More informationSchottky Rectifier, 10 A
Schottky Rectifier, 0 0TQ...S D PK PRODUT SUMMRY I F(V) V R ase cathode 3 N/ node 0 35/45 V FETURES 75 T J operation Low forward voltage drop High frequency operation High purity, high temperature epoxy
More informationN-Channel 8 V (D-S) MOSFET
Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According
More informationN-Channel 60 V (D-S) MOSFET
Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:
More informationMUR1620CT MURB1620CT MURB1620CT-1
Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature MUR60CT MURB60CT MURB60CT- t rr = 5ns I F(AV) = 6Amp V R = 00V Description/
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More informationMURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline
MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications
More informationN-Channel 30 V (D-S) MOSFET
New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (D-S) MOSFET DTK43 PRODUCT SUMMRY V DS (V) R DS(on) ( ) I D () a, e Q g (Typ).38 at V GS = V 98 3 82 nc.44 at V GS = 4.5 V 98 FETURES TrenchFET Power MOSFET % R g and UIS Tested Compliant
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9
More informationN-Channel 20 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationFilter Inductors, High Current, Radial Leaded
Filter Inductors, High Current, Radial Leaded ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with zero DC current Dielectric: 2500 V RMS between winding and 0.250" [6.35 mm] of insulating covering
More informationPower MOSFET D 2 PAK (TO-263) G D. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 Gate-Source Voltage V GS ± 20
Power MOSFET DTW2070 PRODUCT SUMMRY V DS (V) 200 R DS(on) ( ) V GS = 0 V 0.09 Q g (Max.) (nc) 70 Q gs (nc) 3 Q gd (nc) 39 Configuration Single FETURES Halogen-free ccording to IEC 6249-2-2 Definition Surface
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationSmall Signal Zener Diodes, Dual
Small Signal Zener Diodes, Dual DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS 6 PARAMETER VALUE UNIT range nom.. to V Test current T specification Pulse current Circuit configuration Dual
More informationZener Diodes FEATURES APPLICATIONS
Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification
More informationTwo-Line ESD Protection in SOT-23
Two-Line ESD Protection in 2 3 20456 MARKING (example only) YYY = type code (see table below) XX = date code 1 XX YYY XX 20512 20357 1 FEATURES Two-line ESD-protection device ESD-protection acc. IEC 61000-4-2
More informationMOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection
MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide
More informationAluminum Capacitors Power Printed Wiring Style
FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte Large types, cylindrical aluminum case, insulated Provided with keyed polarity Very long useful life: 000 h at 8 C Low ESR, high
More information4-Line BUS-Port ESD-Protection
4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line
More informationN-Channel 150 V (D-S) MOSFET
N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT
More information2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD-Protection Diode - Flow Through Design
VBUS5M2-HT1 2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD-Protection Diode - Flow Through Design 1 22814 3 MRKING (example only) Bar = cathode marking X = date code Y = type code (see
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3
More informationPower Resistor Thick Film Technology
Power Resistor Thick Film Technology DESIGN SUPPORT TOOLS click logo to get started FEATURES 50 W at 25 C case temperature heatsink mounted Direct mounting ceramic on heatsink Broad resistance range: 0.010
More informationTELUX LED FEATURES APPLICATIONS WAVELENGTH
TELUX LED DESCRIPTION 19232 The is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed
More informationSilicon PIN Photodiode, RoHS Compliant
Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the
More informationPower Resistor Thick Film Technology
Power Resistor Thick Film Technology LTO series are the extension of RTO types. We used the direct ceramic mounting design (no metal tab) of our RCH power resistors applied to semiconductor packages. FEATURES
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationSurface Mount ESD Capability Rectifier
Surface Mount ESD Capability Rectifier MSQPG, MSQPJ esmp Series op View Bottom View MicroSMP (DO-29AD) PRIMARY CHARACERISICS I F(AV).0 A V RRM 400 V, 600 V I FSM 5 A V F at I F =.0 A 0.99 V J max. 75 C
More informationSurface Mount ESD Capability Rectifiers
Surface Mount ESD Capability Rectifiers Top View esmp TM Series MicroSMP Bottom View PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 00 V, 200 V, 400 V, 600 V I FSM 20 A V F at I F =.0 A 0.925 V I R µa T J max.
More information50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 DESIGN SUPPORT TOOLS click logo to get started FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:
More informationAluminum Electrolytic Capacitors Power Long Life Snap-In
Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance
More informationSmall Signal Zener Diodes
Small Signal Zener Diodes DESIGN SUPPORT TOOLS click logo to get started FEATURES Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise
More informationP-Channel 8 V (D-S) MOSFET
SiA427J P-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).6 at V GS = - 4. V - 2 a - 8 ocument Number: 667 S2-4-Rev. C, 2-May-2.2 at V GS = - 2. V - 2 a.26 at V GS = -.8 V -
More informationZener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box
Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom.. to V Test current I ZT. to 8 ma V Z specification Pulse current Int. construction Single FEATURES Silicon planar power Zener diodes
More information30 W Power Resistor Thick Film Technology
30 W Power Resistor Thick Film Technology LTO series are the extension of RTO types. We used the direct ceramic mounting design (no metal tab) of our RCH power resistors applied to semiconductor packages.
More informationAluminum Electrolytic Capacitors Power Long Life Snap-In
Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationDouble Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor
End of Life September 018 - Alternative Device: MMKP8 Double Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor FEATURES Material categorization: for definitions of compliance please
More informationP-Channel 20 V (D-S) MOSFET
Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A
PRIMARY CHARACTERISTICS I F(AV) A V RRM 00 V I FSM 00 A E AS 00 mj V F at I F = A 0.58 V T J max. 50 C High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration
More information60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01
Bulletin PD-0745 rev. D 07/0 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationAluminum Electrolytic Capacitors Power Standard Miniature Snap-In
Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In Fig. QUICK REFERENCE DATA DESCRIPTION / PUM-SI smaller dimensions 0/0 PSM-SI long life 0 C Note () A 0 V range is available on request
More informationAluminum Electrolytic Capacitors Axial Miniature, Long-Life
Aluminum Electrolytic Capacitors Axial Miniature, Long-Life 38 AML 0 ASM smaller dimensions Fig. QUICK REFERENCE DATA DESCRIPTION Nominal case sizes (Ø D x L in mm) 6.3 x.7 to 0 x 5 VALUE 0 x 30 to x 38
More informationConductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance
Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance FEATURES Long useful life: up to 5000 h at 105 C Very low ESR and highest ripple current SMD-version with base plate, lead (Pb) free reflow
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationRF Power Feed-Through Capacitors with Conductor Rod, Class 1 Ceramic
DB 06030, DB 06040, DB 06060 RF Power Feed-Through Capacitors with Conductor Rod, Class Ceramic FEATURES Small size Geometry minimizes inductance Wide range of capacitance values APPLICATIONS Filtering
More informationP-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationN-Channel 12 V (D-S) MOSFET
New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET
More informationOptocoupler, Phototransistor Output, Dual Channel
Optocoupler, Phototransistor Output, Dual ILD6 Vishay Semiconductors FEATURES Dual version of SFH6 series i79073_7 A A 2 3 4 8 7 6 5 E E Isolation test voltage, 5300 V RMS V Esat 0.25 ( 0.4) V at I F =
More information