NTMF8N THERMAL REITANCE RATIN Rating ymbol Max Unit Junction-to-Case (rain) R JC. C/W Junction-to-Ambient - teady tate (Note ) R JA Junction-to-Ambien

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NTMF8N Power MOFET V, A, ingle N-Channel, O-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with tandard O-8 Package Footprint New Package Provides Capability of

V ), Low ate Resistance and Low Q Optimized for Low ide ynchronous Applications High peed witching Capability Applications Notebook Computer Vcore Applications Network Applications C-C Converters

1 NTMF8N Power MOFET V, A, ingle N-Channel, O-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with tandard O-8 Package Footprint New Package Provides Capability of Inspection and Probe After Board Mounting Ultra Low R (on) (at. V ), Low ate Resistance and Low Q Optimized for Low ide ynchronous Applications High peed witching Capability Applications Notebook Computer Vcore Applications Network Applications C-C Converters MAXIMUM RATIN ( unless otherwise noted) Rating ymbol Value Unit rain-to-ource Voltage V V ate-to-ource Voltage V V MARKIN Continuous rain teady T A = C I A IARAM Current (Note ) tate T A = 8 C t s T A = C Power issipation teady P. W 8N (Note ) tate O-8 FLAT LEA AYWW T A = C CAE 88AA t s. TYLE Continuous rain T A = C I. A Current (Note ) T A = 8 C 8N = pecific evice Code Power issipation teady P (Note ) tate T A = C.9 W A = Assembly Location Y = Year WW = Work Week Power issipation P T R JC (Note ) C = C W = Pb-Free Package (Note: Microdot may be in either location) Pulsed rain Current t p = s I M A Operating Junction and torage Temperature T J, T stg - to C ORERIN INFORMATION Continuous ource Current (Body iode) I. A evice Package hipping ingle Pulse rain-to-ource Avalanche Energy (V = V, V = V, I PK = A, L = mh, R = ) E A mj NTMF8NT O-8 FL (Pb-Free) Tape / Reel Lead Temperature for oldering Purposes (/8 from case for s) T L C tresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. urface-mounted on FR board using sq. pad size (Cu area =.7 sq. [ oz] including traces).. urface-mounted on FR board using the minimum recommended pad size (Cu area =. sq.). V (BR) V NTMF8NT R (on) TYP.8 V.7 V O-8 FL (Pb-Free) I MAX A Tape / Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging pecification Brochure, BR8/. emiconductor Components Industries, LLC, 7 July, 7 - Rev. Publication Order Number: NTMF8N/

2 NTMF8N THERMAL REITANCE RATIN Rating ymbol Max Unit Junction-to-Case (rain) R JC. C/W Junction-to-Ambient - teady tate (Note ) R JA Junction-to-Ambient - t s (Note ) R JA Junction-to-Ambient - teady tate (Note ) R JA 8 ELECTRICAL CHARACTERITIC ( unless otherwise noted) OFF CHARACTERITIC Characteristic ymbol Test Condition Min Typ Max Unit rain-to-ource Breakdown Voltage V (BR) V = V, I = A V rain-to-ource Breakdown Voltage T emperature Coefficient Zero ate Voltage rain Current I V = V, V = V V (BR) /T J mv/ C. A T J = C ate-to-ource Leakage Current I V = V, V = V na ON CHARACTERITIC (Note ) ate Threshold Voltage V (TH) V = V, I = A.. V Negative Threshold Temperature Coefficient V (TH) /T J 7. mv/ C rain-to-ource On Resistance R (on) V =. V, I = 9 A.7. m V = V, I = A.8. Forward Transconductance g F V = V, I = A CHARE, CAPACITANCE AN ATE REITANCE Input Capacitance C I pf Output Capacitance C O V = V, f =. MHz, V = V Reverse Transfer Capacitance C R 7 Total ate Charge Q (TOT) nc Threshold ate Charge Q (TH) V =. V, V = V, I = A ate-to-ource Charge Q ate-to-rain Charge Q ate Resistance R.7 WITCHIN CHARACTERITIC, V = V (Note ) Turn-On elay Time t d(on) ns Rise Time t r V =. V, V = V, Turn-Off elay Time t d(off) I =. A, R =. 7 Fall Time t f RAIN-OURCE IOE CHARACTERITIC Forward iode Voltage V V = V, I =. A.7. V T J = C. Reverse Recovery Time t RR ns Charge Time t a V = V, d I /d t = A/ s, ischarge Time t b I =. A Reverse Recovery Charge Q RR nc. urface-mounted on FR board using sq. pad size (Cu area =.7 sq. [ oz] including traces).. urface-mounted on FR board using the minimum recommended pad size (Cu area =. sq.).. Pulse Test: Pulse Width s, uty Cycle %.. witching characteristics are independent of operating junction temperatures.

3 NTMF8N TYPICAL PERFORMANCE CURVE I, RAIN CURRENT (AMP). V. V V = V to V. V I, RAIN CURRENT (AMP) V V. V. V T J = C. V.9 V 8 T J = - C V, RAIN-TO-OURCE VOLTAE (VOLT) Figure. On-Region Characteristics Figure. Transfer Characteristics R (on), RAIN-TO-OURCE REITANCE ( ) Figure. On-Resistance vs. ate-to-ource Voltage R (on), RAIN-TO-OURCE REITANCE ( ) V =. V I, RAIN CURRENT (AMP) V = V... 8 I = A.... Figure. On-Resistance vs. rain Current and ate Voltage R (on), RAIN-TO-OURCE REITANCE (NORMALIZE) I = A V = V T J, JUNCTION TEMPERATURE ( C) Figure. On-Resistance Variation with Temperature I, LEAKAE (na) V = V 9 T J = C T J = C 8 7 V, RAIN-TO-OURCE VOLTAE (VOLT) Figure. rain-to-ource Leakage Current vs. Voltage

4 NTMF8N TYPICAL PERFORMANCE CURVE C, CAPACITANCE (pf) 8 7 C iss C oss C rss RAIN-TO-OURCE VOLTAE (VOLT) Figure 7. Capacitance Variation Q V QT Q V Q, TOTAL ATE CHARE (nc) I = A Figure 8. ate-to-ource and rain-to-ource Voltage vs. Total Charge 8 V, RAIN-TO-OURCE VOLTAE (VOLT) t, TIME (ns) V = V I =. A V =. V I, OURCE CURRENT (AMP) 7 V = V t f t d(off) t d(on) t r R, ATE REITANCE (OHM)....7 V, OURCE-TO-RAIN VOLTAE (VOLT).8 Figure 9. Resistive witching Time Variation vs. ate Resistance Figure. iode Forward Voltage vs. Current I, RAIN CURRENT (A) s s V = V ms INLE PULE T C = C ms R (on) LIMIT dc Thermal Limit Package Limit. V, RAIN-TO-OURCE VOLTAE (V) Figure. Maximum Rated Forward Biased afe Operating Area

5 NTMF8N PACKAE IMENION FN x,.7p (O8 FL) CAE 88AA- IUE C TOP VIEW X A E. C B E X. C c X e X A C EATIN PLANE NOTE:. IMENIONIN AN TOLERANCIN PER AME Y.M, 99.. CONTROLLIN IMENION: MILLIMETER.. IMENION AN E O NOT INCLUE MOL FLAH PROTRUION OR ATE BURR. MILLIMETER IM MIN NOM A.9. A. --- b.. c..8. BC E. BC E..8 E. --- e.7 BC.. K. --- L.. L..7 M C A ETAIL A. C OLERIN FOOTPRINT* IE VIEW ETAIL A X X.7.7 8X b X.. C A B TYLE : PIN. OURCE. c L e/. OURCE. OURCE. ATE.9. RAIN K. RAIN. X.9 X E.9. M L..7 MAX BOTTOM VIEW X.. *For additional information on our Pb-Free strategy and soldering details, please download the ON emiconductor oldering and Mounting Techniques Reference Manual, OLERRM/. ON emiconductor and are registered trademarks of emiconductor Components Industries, LLC (CILLC). CILLC reserves the right to make changes without further notice to any products herein. CILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in CILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. CILLC does not convey any license under its patent rights nor the rights of others. CILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the CILLC product could create a situation where personal injury or death may occur. hould Buyer purchase or use CILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold CILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that CILLC was negligent regarding the design or manufacture of the part. CILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERIN INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor P.O. Box, enver, Colorado 87 UA Phone: -7-7 or 8--8 Toll Free UA/Canada Fax: -7-7 or Toll Free UA/Canada orderlit@onsemi.com N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: 79 9 Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative NTMF8N/

NTMFS4825NFET3G. Power MOSFET 30 V, 171 A, Single N Channel, SO 8 FL

NTMFS4825NFET3G. Power MOSFET 30 V, 171 A, Single N Channel, SO 8 FL Power MOFET 3 V, 7 A, ingle N Channel, O 8 FL Features Low R (on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Includes chottky iode Optimized Gate Charge to Minimize witching