NTP30N20G. Power MOSFET 30 Amps, 200 Volts. N Channel Enhancement Mode TO AMPERES 200 VOLTS 68 V GS = 10 V (Typ)
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1 NTP3N Preferred evice Power MOSFET 3 Amps, Volts NChannel EnhancementMode TO Features Sourcetorain iode Recovery Time Comparable to a iscrete Fast Recovery iode Avalanche Energy Specified I SS and R S(on) Specified at Elevated Temperature PbFree Package is Available* Applications PWM Motor Controls Power Supplies Converters 3 AMPERES VOLTS 68 V S = V (Typ) NChannel MAXIMUM RATINS (T C = 5 C unless otherwise noted) Rating Symbol Value Unit raintosource Voltage V SS raintosource Voltage (R S =. M ) V R atetosource Voltage Continuous NonRepetitive (t p ms) rain Current T A 5 C T A C Pulsed (Note ) Total Power T A = 5 C erate above 5 C V S V SM I I I M P 4.43 Operating and Storage Temperature Range T J, T stg 55 to +75 Adc W W/ C C 3 TO CASE A STYLE 5 S MARKIN IARAM & PIN ASSINMENT 3N AYWW S Single raintosource Avalanche Energy Starting (V =, V S =, I L (pk) = A, L = 3. mh, R = 5 ) Thermal Resistance JunctiontoCase JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds E AS 45 R JC.7 R JA 6.5 mj C/W T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Pulse Test: Pulse Width = s, uty Cycle = %. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. A Y WW = Assembly Location = Year = Work Week = PbFree Package ORERIN INFORMATION evice Package Shipping NTP3N TO 5 Units / Rail NTP3N TO (PbFree) 5 Units / Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 6 March, 6 Rev. 5 Publication Order Number: NTP3N/
2 NTP3N ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS raintosource Breakdown Voltage (V S =, I = 5 Adc) Temperature Coefficient (Positive) V (BR)SS 37 mv/ C Zero ate Voltage Collector Current (V S =, V S =, ) (V S =, V S =, T J = 75 C) I SS 5. 5 Adc atebody Leakage Current (V S = ±3, V S = ) I SS ± nadc ON CHARACTERISTICS ate Threshold Voltage (V S = V S, I = 5 Adc) Temperature Coefficient (Negative) Static raintosource OnState Resistance (V S =, I = 5 Adc) (V S =, I = Adc) (V S =, I = 5 Adc, T J = 75 C) raintosource OnVoltage (V S =, I = 3 Adc) V S(th). R S(on) V S(on)..5 mv/ C Forward Transconductance (V S = 5, I = 5 Adc) g FS Mhos YNAMIC CHARACTERISTICS Input Capacitance (V S = 5, V S =, f =. MHz) C iss 335 pf Output Capacitance (V S = 5, V S =, f =. MHz) (V S = 6, V S =, f =. MHz) Reverse Transfer Capacitance (V S = 5, V S =, f =. MHz) C rss 75 C oss SWITCHIN CHARACTERISTICS (Notes & 3) TurnOn elay Time t d(on) ns Rise Time (V =, I = 8 Adc, t r V S = 5., R =.5 ) TurnOff elay Time (V = 6, I = 3 Adc, t d(off) V S =, R = 9. ) Fall Time t f ate Charge (V S = 6, I = 3 Adc, V S = ) (V S = 6, I = 8 Adc, V S = 5. ) Q tot Q gs Q gd 3 nc BOYRAIN IOE RATINS (Note ) Forward OnVoltage (I S = 3 Adc, V S = ) (I S = 3 Adc, V S =, T J = 5 C) V S.9.8. Reverse Recovery Time (I S = 3 Adc, V S =, di S /dt = A/ s) t rr 3 ns t a 4 t b 85 Reverse Recovery Stored Charge Q RR.85 C. Indicates Pulse Test: P. W. = 3 s max, uty Cycle = %. 3. Switching characteristics are independent of operating junction temperature.
3 NTP3N V S = V 6 V 9 V 8 V 7 V 5 V 4 V V S, RAINTOSOURCE VOLTAE (VOLTS) V S V T J = C T J = 55 C V S, ATETOSOURCE VOLTAE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R S(on), RAINTOSOURCE RESISTANCE ( ) V S = V T J = C T J = 55 C R S(on), RAINTOSOURCE RESISTANCE ( ).9 V.8 S = V V S = 5 V R S(on), RAINTOSOURCE RESISTANCE (NORMALIZE) Figure 3. OnResistance versus rain Current and Temperature I = 5 A V S = V T J, JUNCTION TEMPERATURE ( C) 5 Figure 5. OnResistance Variation with Temperature 75 I SS, LEAKAE (na) Figure 4. OnResistance versus rain Current and ate Voltage V S = V T J = 75 C T J = C V S, RAINTOSOURCE VOLTAE (VOLTS) Figure 6. raintosource Leakage Current versus Voltage 3
4 NTP3N POWER MOSFET SWITCHIN Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (I (AV) ) can be made from a rudimentary analysis of the drive circuit so that t = Q/I (AV) uring the rise and fall time interval when switching a resistive load, V S remains virtually constant at a level known as the plateau voltage, V SP. Therefore, rise and fall times may be approximated by the following: t r = Q x R /(V V SP ) t f = Q x R /V SP where V = the gate drive voltage, which varies from zero to V R = the gate drive resistance and Q and V SP are read from the gate charge curve. uring the turnon and turnoff delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: t d(on) = R C iss In [V /(V V SP )] t d(off) = R C iss In (V /V SP ) The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the offstate condition when calculating t d(on) and is read at a voltage corresponding to the onstate when calculating t d(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. C, CAPACITANCE (pf) V S = V C iss C rss V S = V C iss C oss C rss V S V S 5 ATETOSOURCE OR RAINTOSOURCE VOLTAE (VOLTS) Figure 7. Capacitance Variation 4
5 NTP3N V S, ATETOSOURCE VOLTAE (VOLTS) V S Q Q T Q V S I = 3 A Q, TOTAL ATE CHARE (nc) V S, RAINTOSOURCE VOLTAE (VOLTS) t, TIME (ns) V = 6 V I = 3 A V S = V t r t d(off) t d(on) t f R, ATE RESISTANCE ( ) Figure 8. atetosource and raintosource Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus ate Resistance RAINTOSOURCE IOE CHARACTERISTICS 3, SOURCE CURRENT (AMPS) IS V S = V V S, SOURCETORAIN VOLTAE (VOLTS) Figure. iode Forward Voltage versus Current SAFE OPERATIN AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous draintosource voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T C ) of 5 C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, Transient Thermal Resistanceeneral ata and Its Use. Switching between the offstate and the onstate may traverse any load line provided neither rated peak current (I M ) nor rated voltage (V SS ) is exceeded and the transition time (t r,t f ) do not exceed s. In addition the total power averaged over a complete switching cycle must not exceed (T J(MAX) T C )/(R JC ). A Power MOSFET designated EFET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases nonlinearly with an increase of peak current in avalanche and peak junction temperature. Although many EFETs can withstand the stress of draintosource avalanche at currents up to rated pulsed current (I M ), the energy rating is specified at rated continuous current (I ), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure ). Maximum energy at currents below rated continuous I can safely be assumed to equal the values indicated. 5
6 NTP3N SAFE OPERATIN AREA I, RAIN CURRENT (AMPS) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZE) V S = V SINLE PULSE T C = 5 C.. Figure. Maximum Rated Forward Biased Safe Operating Area = R S(on) LIMIT THERMAL LIMIT PACKAE LIMIT. SINLE PULSE.. s s ms ms dc E AS, SINLE PULSE RAINTOSOURCE AVALANCHE ENERY (mj) V S, RAINTOSOURCE VOLTAE (VOLTS) T J, STARTIN JUNCTION TEMPERATURE ( C) P (pk) t. t, TIME ( s) Figure 3. Thermal Response Figure. Maximum Avalanche Energy versus Starting Junction Temperature t UTY CYCLE, = t /t. I = 3 A R JC (t) = r(t) R JC CURVES APPLY FOR POWER PULSE TRAIN SHOWN REA TIME AT t T J(pk) T C = P (pk) R JC (t). I S di/dt t rr t a t b TIME t p.5 I S I S Figure 4. iode Reverse Recovery Waveform 6
7 NTP3N PACKAE IMENSIONS TO CASE A9 ISSUE AA H Q Z L V B 4 3 N A K F T U S R J C T SEATIN PLANE NOTES:. IMENSIONIN AN TOLERANCIN PER ANSI Y4.5M, 98.. CONTROLLIN IMENSION: INCH. 3. IMENSION Z EFINES A ZONE WHERE ALL BOY AN LEA IRREULARITIES ARE ALLOWE. INCHES MILLIMETERS IM MIN MAX MIN MAX A B C F H J K L N Q R S T U V.45.5 Z.8.4 STYLE 5: PIN. ATE. RAIN 3. SOURCE 4. RAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERIN INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 63, Phoenix, Arizona 8583 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 535 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NTP3N/
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