Maintenance/ Discontinued

Transcription

1 CC Area Image Sensor MWAE mm (type-/) Wide CC Area Image Sensor Overview The MWAE is a mm (type-/) interline transfer CC (IT-CC) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section and CCs for signal read out. The electronic shutter function has made an exposure time of / seconds possible. Further, this device has the features of high sensitivity, low noise, broad dynamic range, and low smear. This device has a total of, pixels (, horizontal vertical) and provides stable and clear images with a resolution of horizontal TV-lines and vertical TV-lines. Part Number Size System Color or B/W MWAE mm(type-/) PAL B/W Total number of pixels:, (horizontal) (vertical) High sensitivity Low noise Broad dynamic range Low smear Low image lag Electronic shutter No image distortion High reliability -pin IL ceramic package Applications Cameras for commercial use evice Configuration iagram (Unit : column) Vertical dummy bit (No P) Al shielding P P for transient Vertical dummy bit (No P) Effective pixels RG R O VO LG H H OG GN PW (Top View) WIP-C- (P : Photo diode) part φ V φ V φ V φ V φ V φ V φ V Sub PT φ V Horizontal dummy bit Effective horizontal CC Horizontal dummy bit

2 MWAE CC Area Image Sensor Pin escriptions Pin No. Symbol escriptions Pin No. Symbol escriptions RG Reset gate φ V Vertical CC gate R Reset drain PT P-well for protection circuit O Output drain Sub Substrate VO Video output φ V Vertical CC gate LG Load gate φ V Vertical CC gate H Horizontal CC gate φ V Vertical CC gate H Horizontal CC gate OG Output gate GN P-well PW P-well Absolute Maximum Ratings and Operating Conditions Parameter Symbol φ V Vertical CC gate φ V Vertical CC gate φ V Vertical CC gate φ V Vertical CC gate Rating Operating condition min max min typ max Reset gate voltage * RG(H)... V RG(L) Adjust. Reset drain voltage R... V Output drain voltage O... V Video output voltage VO Load gate voltage LG... V Horizontal CC H(H)... V gate voltage H(L). Horizontal CC H(H)... V gate voltage H(L). Output gate voltage OG. Adjust. V GN GN Reference voltage V P-well voltage PW Reference voltage V Vertical CC gate voltage φ V(M).. V φ V(L)... Protection P-well voltage PT... V Substrate voltage * Sub(). Adjust. V Sub()..+(). Vertical CC gate voltage φ V(H)... V φ V(M).. φ V(L)... Unit

3 CC Area Image Sensor MWAE Absolute Maximum Ratings and Operating Conditions(continued) Parameter Symbol Rating Operating condition min max min typ max Vertical CC gate voltage φ V(M).. V φ V(L)... Vertical CC gate voltage φ V(H) V φ V(M).. φ AV(L)... Vertical CC gate voltage φ V(M).. V φ V(L)... Vertical CC gate voltage φ V(H)... V φ V(M).. φ V(L)... Vertical CC gate voltage φ V(M).. V φ V(L)... Vertical CC gate voltage φ V(H) V φ V(M).. φ V(L)... Operating temperature T opr C Storage temperature T stg C Note)* : The RG settings are as shown in the diagram at the right. * : The Sub settings are as shown in the diagram at the right. Sub() : C component in normal operation Sub() : Pulse voltage applied when electronic shutter operates +Sub() Sub() initial setting is. v, and is adjusted to the minimum voltage when blooming does not occur at times the light input of standard light input, or the minimum voltage when injection does not occur. Image Characteristics RG(H) Color Effective S/N Saturation output Standard output Vertical smear Image Part Number or pixels typ typ typ typ typ B/W H V ( db) (mv) (mv) (db) (%) MWAE B/W Note)Standard light input is the one when exposure is done at a lens (Fujinon CFL) aperture of F, using a light source (light box) of K and nt, and placing a color temperature conversion filter LB- (HOYA) and an IR cutting filter CAW-S (t =. mm) in the light path. Standard light output is the CC output (after conversion by the emitter follower) obtained under imaging conditions using standard light input. V V RG(L) Sub() Sub() Unit

4 MWAE CC Area Image Sensor CS pulse timing Based on high speed pulse timing of driving LSI MN T Squeeze :, T=. ns φ H % % % CC output φ R S S % %. ns. ns. ns

5 CC Area Image Sensor MWAE Timing iagram (Squeeze : ) Field A timing *CBLK *H *V *CC output φ H φ H CP HCLR PBLK φ V φ V φ V φ V φ V φ V φ V φ V φ Sub Note). Items marked with * are not output by this LSI.. Sub applies only for shutter setting

6 MWAE CC Area Image Sensor Timing iagram (Squeeze : )(continued) Field B timing *CBLK *H *V *CC output φ H φ H CP HCLR PBLK φ V φ V φ V φ V φ V φ V φ V φ V φ Sub Note). Items marked with * are not output by this LSI.. Sub applies only for shutter setting

7 CC Area Image Sensor MWAE Timing iagram (Squeeze : )(continued) V Rate read out details < Field A > T T T T = /( f h ) =. ns H φ V T T T T T T φ V T T T T φ V T T T T φ V T T T T φ V φ V T T T T φ V T T T T φ V < Field B > T = /( f h ) =. ns H φ V φ V T T T T T T T T T φ V T T φ V T T T T T T φ V φ V T T φ V T T T T φ V T T

8 MWAE CC Area Image Sensor Timing iagram (Squeeze : )(continued) Horizontal timing chart T = /(f h ) =. ns CBLK T. µs T HCLR T T φ H φ H φ R CC out CP PBLK φ V φ V φ Sub T T T A part : P : (Valid pixels) T T T T T T φ V T T φ V T T φ V T T φ V T T φ V T T φ V T T T T T

9 CC Area Image Sensor MWAE Timing iagram (Squeeze : )(continued) Horizontal timing chart A part details T = / f h =. ns T φ H φ H φ R Package imensions (Unit : mm) WIP-C-.±. R..±.. +..±..±. Index mark I.O.±..±... I.O=Center of image φ.. M. +..±..±..±..±..±..±. Within (chip rotation ±. ) On-chip lens Anti-flare plate SUS.t ouble side anti-reflection film coated glass t=.± ±. Chip center =.±. Chip periphery = ±..±...

10 Request for your special attention and precautions in using the technical information and semiconductors described in this book () If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. () The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. () The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. () The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. () When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. () Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ES, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. () This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.