TLP250 TLP250. Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive. Truth Table

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1 TOSHIB Photocoupler Gals Ired & Photo IC TLP20 Transistor Inverter Inverter For ir Conditioner IGBT Gate Drive Power MOS FET Gate Drive Unit in mm The TOSHIB TLP20 consists of a Gals light emitting diode and a integrated photodetector. This unit is lead DIP package. TLP20 is suitable for gate driving circuit of IGBT or power MOS FET. Input threshold current: =m(max.) Supply current (I CC ): m(max.) Supply voltage ( CC ): 0 3 Output current (I O ): ±. (max.) Switching time (t plh /t phl ): 0.μs(max.) Isolation voltage: 200 rms (min.) UL recognized: UL77, file No.E739 Option(D) DE pproved : DIN EN Maximum Operating Insulation oltage : 90PK Highest Permissible Over oltage : 000PK (Note):When a EN approved type is needed, Please designate Option(D) TOSHIB 0C Weight: 0. g(typ.) Pin Configuration (top view) 2 7 Truth Table 3 Tr Tr2 Input LED On On Off Off Off On : N.C. 2 : node 3 : Cathode : N.C. : GND : (Output) 7 : : CC Schmatic I CC CC (T r ) F I O (T r 2) 0.μF bypass capcitor must be connected between pin and (See Note ). GND

2 bsolute Maximum Ratings (Ta = 2 C) LED Detector Characteristic Symbol Rating Unit Forward current 20 m Forward current derating (Ta 70 C) Δ / ΔTa 0.3 m / C Peak transient forward curent (Note ) PT Reverse voltage R Junction temperature Tj 2 C H peak output current (P W 2.μs,f khz) (Note 2) I OPH. L peak output current (P W 2.μs,f khz) (Note 2) I OPL +. Output voltage Supply voltage (Ta 70 C) 3 (Ta = C) 2 (Ta 70 C) 3 CC (Ta = C) 2 Output voltage derating (Ta 70 C) Δ / ΔTa 0.73 / C Supply voltage derating (Ta 70 C) Δ CC / ΔTa 0.73 / C Junction temperature Tj 2 C Operating frequency (Note 3) f 2 khz Operating temperature range T opr 20~ C Storage temperature range T stg ~2 C Lead soldering temperature (0 s) T sol 20 C Isolation voltage (C, min., R.H. 0%) (Note ) B S 200 rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note : Pulse width P W μs, 300pps Note 2: Exporenential wavefom Note 3: Exporenential wavefom, I OPH.0( 2.μs), I OPL +.0( 2.μs) Note : Device considerd a two terminal device: Pins, 2, 3 and shorted together, and pins,, 7 and shorted together. Note : ceramic capacitor(0.μf) should be connected from pin to pin to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length between capacitor and coupler should not exceed cm. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, on (Note) (ON) 7 0 m Input voltage, off F(OFF) 0 0. Supply voltage CC Peak output current I OPH /I OPL ±0. Operating temperature T opr C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. dditionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note : Input signal rise time(fall time)<0.μs

3 Electrical Characteristics (Ta = 20~70 C, unless otherwise specified) Characteristic Symbol Test Cir cuit Test Condition Min Typ.* Max Unit Input forward voltage F = 0 m, Ta = 2 C.. Temperature coefficient of forward voltage Δ F / ΔTa = 0 m 2.0 m / C Input reverse current I R R =, Ta = 2 C 0 μ Input capacitance C T = 0, f = MHz, Ta = 2 C 20 pf Output current H level I OPH L level I OPL 2 CC = 30 (*) = 0 m = = 0 = Output voltage H level H 3 L level L CC = +, EE = R L = 200Ω, = m CC = +, EE = R L = 200Ω, F = Supply current Threshold input current Threshold input voltage H level I CCH L level I CCL Output L H Output H L LH FHL CC = 30, = 0m Ta = 2 C 7 CC = 30, = 0m CC = 30, = 0m Ta = 2 C 7. CC = 30, = 0m CC = +, EE = R L = 200Ω, > 0 CC = +, EE = R L = 200Ω, < 0 m.2 m 0. Supply voltage CC 0 3 Capacitance (input output) C S Resistance(input output) R S S = 0, f = MHz Ta = 2 S = 00, Ta = 2 C R.H. 0% * ll typical values are at Ta = 2 C (*): Duration of I O time 0μs pf Ω

4 Switching Characteristics (Ta = 20~70 C, unless otherwise specified) Characteristic Symbol Test Cir cuit Test Condition Min Typ.* Max Unit Propagation L H t plh delay time H L t phl = m CC = +, EE = Output rise time t r R L = 200Ω Output fall time Common mode transient immunity at high level output Common mode transient immunity at low level output ll typical values are at Ta = 2 C t f C MH C ML CM = 00, = m CC = 30, Ta = 2 C CM = 00, = 0m CC = 30, Ta = 2 C μs 000 / μs 000 / μs Test Circuit : IOPH Test Circuit 2 : IOPL 0.μF CC 0.μF IF - CC I OPH I OPL - Test Circuit 3 : OH Test Circuit : OL 0.μF CC 0.μF CC R L F R L H L EE EE

5 Test Circuit : t plh, t phl, t r t f 0.μF R L CC t r t f H GND 0% L 0% 00Ω t p LH t p HL EE Test Circuit : C MH, C ML SW B 0.μF CC CM CM 90% 0% t r SW :( =m) 3 t f 2 C MH C ML = C MH = 0 () t r (μs) 0 () t f (μs) SW :B( =0) C HL C ML (C MH ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state

6 F Δ F / ΔTa Forward current IF (m) 00 Ta = 2 C Forward voltage temperature coefficient ΔF / ΔTa (m / C) Forward voltage F () Forward current (m) 0 Ta 0 CC Ta llowable forward current IF (m) llowable supply voltage CC () mbient temperature Ta ( C) mbient temperature Ta ( C) I OPH, I OPL Ta PW 2. μs, f KHz llowable peak output current IOPH, IOPL () mbient Temperature Ta ( C)

7 RESTRICTIONS ON PRODUCT USE EN The information contained herein is subject to change without notice. TOSHIB is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIB products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIB products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIB products are used within specified operating ranges as set forth in the most recent TOSHIB products specifications. lso, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIB Semiconductor Reliability Handbook etc. The TOSHIB products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIB products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIB products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIB for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIB or the third parties. Gas(Gallium rsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations