Design Techniques for CMOS Broadband Amplifiers

Transcription

1 Deign Technique for MOS Broaban Amlifier Shawn S. H. Hu an Allen J. D. Jin High-ee Device an Integrate ircuit Grou Electrical Engineering an Intitute of Electronic Engineering National Ting Hua Univerity, Hin hu, Taiwan /9/9 High-See Device an Integrate ircuit Grou, NTHU -5

2 Outline Introuction Alication of broaban amlifier MOS eign conieration an challenge Different wieban technique π-tye inuctor eaking (PIP) Tranfer function analyi A 4-Gb/ TIA uing.8-μm MOS technology Aymmetric tranformer eaking Tranfer function analyi A miniaturize 7-GHz amlifier uing.3-μm MOS technology Summary an concluion High-See Device an Integrate ircuit Grou, NTHU -5

3 Broaban Amlifier for communication Wirele communication ytem NA Mixer I/Q Antenna Filter O Demoulator T Switch P Filter PA Filter I/Q Moulator High-See Device an Integrate ircuit Grou, NTHU Multilier 3-5

4 Broaban Amlifier for communication (cont.) Otical communication ytem Tx Driver MUX Digital ogic Fiber D x TIA A D DMUX Digital ogic Fiber PD To meet requirement of high-ee an low-noie, III-V or SiGe technology i referre Still a challenge if uing MOS to eign High-See Device an Integrate ircuit Grou, NTHU 4-5

5 Otical interconnect [ef.]: W. Bogaert, Photonic an Nanotructure, IME [ef.]: Photonic reearch grou, INTE [ef.]:. G. Beauoleil, IEEE EOS, 7, HP laboratorie Intra-chi otical interconnect a miniaturize otical communication ytem on chi One of the bottleneck: high-ee, mall-ize, an low ower broaban amlifier in MOS High-See Device an Integrate ircuit Grou, NTHU 5-5

6 How far can we uh the F circuit erformance uing MOS? In aition to continuou caling of MOS, what ele can we o? ircuit configuration (imler olution i alway a better olution) Inuctive comonent (effective way to enhance Gain-BW) ayout (the key to ucce) Major conieration when eigning a MOS broaban amlifier hi area (cot) Gain-Banwith rouct Power conumtion Grou elay, noie, linearity,.. High-See Device an Integrate ircuit Grou, NTHU 6-5

7 Scaling of MOS an imitation for High-ee Oeration For tranimeance gain conieration g g g ft an fmax (GHz) μm f max f T.5 μm.8 μm.3 μm 9 nm 65 nm i g m v g Gain g Gain BW / g ( g ) BW / ( g ) GBW /( g ) GBW /( g ) v out GBW See High-See Device an Integrate ircuit Grou, NTHU 7-5

8 Broaban Technique for Amlifier Feeback amlifier imle to eign an mall chi area not eay to achieve high gain if a large banwith i require g v g f g m v g Ditribute amlifier form virtual tranmiion line to achieve a large BW large D ower conumtion an chi area (arallel amlification; gain ae from each tage) Inuctive eaking amlifier No aitional D ower high gain can be obtaine by cacae amlification (gain multilie from each tage) Inuctor conume a large chi area v g g g m v g High-See Device an Integrate ircuit Grou, NTHU 8-5

9 Inuctive Peaking Technique Inuctor can introuce a zero in the tranfer function to enhance BW z z z, z Inuctor can alo introuce comlex conjugate ole to enhance BW if the aming factor ζ i maller than.77 H ( ) ζ P (-ζ ζ ) P (-ζ ζ ) High-See Device an Integrate ircuit Grou, NTHU 9-5

10 Shunt Inuctor Peaking V 9 g m v g g v out Normalize gain (B) a: without any eaking technique b: inuctor eaking Normalize frequency (ra/) A zero i introuce by to exten BW Banwith enhancement ratio (BWE) i.85 [ef.] S. S. Mohan, M. el M. Herhenon, S. P. Boy, an T. H. ee, Banwith extenion in MOS with otimize on-chi inuctor, IEEE J. of Soli-State ircuit, vol. 35, , Mar.. High-See Device an Integrate ircuit Grou, NTHU -5

11 Shunt-Serie Peaking V 9 g m v g g v out Normalize gain (B) a: without any eaking technique b: inuctor eaking c: hunt-erie eakking Normalize frequency (ra/) A zero an a air of comlex conjugate ole are introuce to exten BW, an the BWE i.83 ( g / 3) [ef.] S. Galal an B. azavi, 4-Gb/ amlifier an ESD rotection circuit in.8 µm MOS technology, IEEE J. of Soli-State ircuit, vol. 39, , Dec. 4. High-See Device an Integrate ircuit Grou, NTHU -5

12 T-coil Peaking V 9 g m v g c k v out Normalize gain (B) a: without any eaking technique b: inuctor eaking c: hunt-erie eakking : T-coil eaking g Normalize frequency (ra/) A zero an two air of comlex conjugate ole are introuce to exten BW, an the BWE i.4 [ef.] S. Galal an B. azavi, Broaban ESD rotection circuit in MOS technology, IEEE J. of Soli-State ircuit, vol. 38, , Dec. 3. High-See Device an Integrate ircuit Grou, NTHU -5

13 Prooe π-tye Inuctor Peaking (PIP) V g m v g g v out Normalize gain (B) e: without any inuctor f : g: h: Normalize frequency (ra/) Introuce two zero an two air of comlex ole The BWE i 3.3 with a gain flatne within B High-See Device an Integrate ircuit Grou, NTHU 3-5

14 4-5 High-See Device an Integrate ircuit Grou, NTHU () D D D D D D H PIP ( ) ( )( ) ( ) ( ) ( ) D D D D D D where V g m v g v out g Tranfer Function of PIP Toology Two air of comlex conjugate ole Two zero

15 Zero, Pole, an omlex ole without PIP Zero.33 z z.33 z z.33.5 Pole., 3.39 omlex ole Daming factor.6,, ξ ζ,,.79,., 3.37 ξ ζ,, ξ ζ,, 3,, 4.8.8,.8, 4 3. ξ ζ,, ζξ,, 4,, Both aming factor ζ, an ζ, 4 are <.77, BW enhancement High-See Device an Integrate ircuit Grou, NTHU 5-5

16 ircuit Toology of 4 Gb/ TIA V D D D D D D M M M M Out In 3 M M M 3 M 4 4 S tage in cacae low ower an high gain π-tye inuctor eaking (PIP) wie BW The circuit BW i enhance x by PIP High-See Device an Integrate ircuit Grou, NTHU Z T (BΩ) TIA without PIP TIA with PIP Frequency (GHz) 6-5

17 ayout onieration V Gn V Gn In Gn.7 x.46 mm Gn Out Gn M6 M5 M4 M3 M M Groun Signal Groun 3μm 5μm 6.5μm Si Subtrate Full-cutom eigne inuctor to reuce chi area Ue GPW (groune colanar wave guie) tructure imrove hieling for loy Si ubtrate an reuce crotalk remove guar-ring of inuctor to further reuce the ize High-See Device an Integrate ircuit Grou, NTHU 7-5

18 Meaure Z T an Eye Diagram Gb/ Z T (BΩ) 3 5 Z IN (Ω) 63 mv Frequency (GHz) Gain: 5 BΩ BW: 3.5 GHz ( ~.5 f T ) I in : 74 μa 3 - PBS High-See Device an Integrate ircuit Grou, NTHU 8-5

19 omarion with Prior Art [ef.] J. Jin an S. Hu, A 4-Gb/ tranimeance amlifier in.8-µm MOS technology, IEEE J. Soli-State ircuit, vol. 43, no. 6, , June, 8. High-See Device an Integrate ircuit Grou, NTHU 9-5

20 Aymmetric Tranformer Peaking V DD D ξ <.77 ξ < Z T () k S P M Unequale P an S uitable for unequale an g ( S k PS )/ 3 4 ( ) ( ) ( k ) ( k ) g P S P S S g g/ Frequency (GHz) P S P g P S g Introuce one zero an two air of comlex conjugate ole k-relate term are negative frequencie of zero an comlex ole Achieve a BWE u to 5 High-See Device an Integrate ircuit Grou, NTHU -5

21 Amlifier onfiguration V DD D D D D D M Inuctive network Inuctive S network Inuctive S network Inuctive S network Inuctive S network S (B) In Inuctive network M M A : Without any eaking technique B : Shunt eaking : Shunt-erie eaking D : Symmetric tranformer eaking E : Aymmetric T-coil eaking F : Aymmetric tranformer eaking Frequency (GHz) High-See Device an Integrate ircuit Grou, NTHU M M M Out 5 cacae S tage: high gain M an D : matching/biaing reitor Gain:.3 B BW: 8.6 GHz (only 7. GHz w/o inuctive network) -5

22 Tranformer ayout an hi ayout of the aymmetric tranformer (otimize for chi area an k) Micrograh V DD GND V DD 66 μm In Out.6.5 Q P core area P an S (nh), k Q S k S P Frequency (GHz) Q P an Q S hi area:.39 mm ore area:.5 mm 59 μm High-See Device an Integrate ircuit Grou, NTHU -5

23 Meaurement eult Goo agreement between meaure an imulate reult BW: 7.6 GHz Gain-banwith rouct GBW: 3 GHz High-See Device an Integrate ircuit Grou, NTHU 3-5

24 omarion with Prior Art [ef.] J. Jin an S. Hu, A miniaturize 7-GHz broaban amlifier in.3-µm MOS technology," IEEE Tran. Microwave Theory Tech., vol. 56, no., , Dec. 8. High-See Device an Integrate ircuit Grou, NTHU 4-5

25 Summary an oncluion A 4 Gb/ tranimeance amlifier (TIA) wa achieve uing the rooe π-tye Inuctor Peaking (PIP) technique by.8-μm MOS technology A 7-GHz miniaturize (core area only.5 mm ) broaban amlifier wa achieve uing the rooe aymmetric tranformer eaking technique by.3-μm MOS technology Acknowlegement We woul like to thank National hi Imlementation enter (I) an TSM for the chi fabrication, an National Nano Device aboratorie (ND) for chi meaurement. High-See Device an Integrate ircuit Grou, NTHU 5-5