Project SLiT- J Synchrotron Light in Tohoku, Japan

Transcription

1 SLiT-J Project SLiT- J Synchrotron Light in Tohoku, Japan Outline Conceptual Design of Accelerator Comple V.0 April, 04 SLiT- J Design Team High Brilliant Light Source in the World horizontal emiance ε < 0 nmrad OperaZonal Under construczng DIAMOND 3 GeV.7 nm SOLEIL.75 GeV 3.7 nm MAX- II.5 GeV 8.7 nm MAX- IV 3 GeV 0.8 nm PETRA- III 6 GeV nm BESSY- II.7 GeV 5. nm PLS- II 3 GeV 5.8 nm APS 7 GeV 3 nm SLS.4 GeV 5 nm SLiT-J s target 3 GeV < nm ALBA 3 GeV 4.3 nm SSRF 3.5 GeV 3.9 nm SPring- 8 8 GeV 3.4 nm NSLS- II 3 GeV 0.55 nm ILSF 3 GeV.6 nm TPS 3 GeV.7 nm ALS.9 GeV 6.3 nm SPEAR- 3 3 GeV 9.8 nm ELETTRA.4 GeV 7 nm ASP 3 GeV 0 nm ESRF 6 GeV 4 nm SIRIUS 3 GeV 0.8 nm

2 STORAGE RING. Low emihance strategy Synchrotron integrals I I I 3 I 4 I 5 η ds ρ ds ρ ds ρ 3 ρ ρ + K ds H ds where H( s) γη + αηη ʹ + βη ʹ η ρ 3 Important funcpon of quantum ecitapon in bends. Momentum compaction factor α I πr. Horizontal emittance ε C qγ I 5 ( I I 4 ) σ 3. Energy spread E E 4. Energy loss U 0 C γ E 4 I π C qγ I 3 ( I + I 4 ) where C q mc 4π where C γ 3 mc 5. Damping partition J - I 4 I, J E + I 4 I, D I 4 I ( ) m ( GeV ) 3 How to achieve low emiance laace Theoretical minimum emittance ε min 4 5 C q C q γ θ 3 C ( achromat), ε min q γ θ 3 ( non achromat) 5 J (mrad) θ ; bending angle (rad) J ; horizontal damping partition (~.5) J J ( n)η/ρ 3 ds /ρ ds TME lauce Achromat lauce Non- achromat lauce dispersion func-on Smaller θ means increase of number of bending magnets. Non- achromat laace reduces the emihance significantly. Be careful, energy spread increases the effecpve emihance. bending magnets σ η E E ε effective ε + ε β STORAGE RING. Low emihance strategy Reducing emiance further ε C q γ I 5 I I 4 I ε W C q γ 5 + I 5W I I 4 + I W I 4W - for radiapon damping on bending magnets only - for radiapon damping in bending magnets and wigglers ( W denotes S.I. in wigglers) Strong damping wiggler is employed in NSLS- II (. nmrad - > 0.55 nmrad) when H dipole H W >> ε W ε U 0 U 0 +U W where U 0 ; Radiated power from dipoles U W ; Radiated power from wigglers U 0 [MW] E 4 [GeV]/ρ [m]i [A] ε W 4 ε U 0 3U W Bends; E 3 GeV, ρ 5 m U 0 ~ 0.3 MW/A U W [MW] E [GeV]B 0 [kg] L u [m] I [A] Wigglers; E 3 GeV, B 0.5 T, L u 70 m U 0 ~ 0.9 MW/A It is possible! SLiT- J s soluzon: MulZ- bend laace structure + high- field mulz- pole wiggler (MPW) SLiT- J s Targets ε effeczve ~ nmrad or below for world class high brilliant light source C ~ m for compactness and low construczon and operazon costs 3 More then 0 straight seczons for sufficient number of the beam- lines

3 STORAGE RING. LaUce 4- bend non- achromat laace beam energy number of cells circumference number of bends number of quads number of sets natural emihance ( with MPW straight secpon.998 GeV m 56 (combined) B T K 6. T/m 4 (5- family) 96 (6- family).3 nmrad 0.85 nmrad).43 m m 4 Bend Quadrupole Setupole MulP- pole wiggler (oppon) Undulator beamline undulator MWP undulator MWP beamline unit cell AddiPonal damping effect by wiggler in short 5 straight secpon STORAGE RING. LaUce Dynamic aperture opzmized by GeneZc Algorism No alignment error ±50 µm uniform distribupon error for setupoles (0 sets) Sufficiently wider dynamic aperture with reasonable setupole strengths. Beam size in a cell Coherent fraczon σ ~ 35 µm, σy ~ 0 µm at inserpons 6

4 STORAGE RING. LaUce Basic Parameters of SLiT- J Storage Ring (4- cell la<ce) (6- cell op-on) Beam energy E.998 GeV.998 GeV LaUce structure 4- bend cell 4- bend cell Circumference C m m Number of cells (bends) N c 4 (56) 6 (64) Long straight secpon LSS 5.33 m m 4 Short straight secpon SSS.43 m 4.43 m 4 Betatron tune (ν, ν y ) (5.85, 6.75) (9.5, 7.5) Natural chromapcity (ξ, ξ y ) (- 64.8, ) (- 65., ) Natural horizontal emihance ε.9 (0.85*) nmrad 0.78 (0.55*) nmrad Momentum compacpon factor α Natural energy spread σ E /E % % LaUce funcpons at LSS (β, β y, η ) (3.,.96, 0.07) m (.9, 3.73, 0.06) m Damping parppon number (D, J, J s ) (- 0.34,.34,.659) ( ,.349,.65) Damping Pme (v, τ y, τ s ) (7.7, 0.3, 6.) ms (9.9, 3.4, 8.) ms Energy loss in bends U MeV/turn MeV/turn RF frequency f RF 508 MHz 508 MHz RF voltage V RF 3 MV 3 MV Harmonic number h Natural bunch length σ B 3.43 mm (. ps).95 mm (9.85 ps) * with MPWs in all short straight secpon STORAGE RING 3. Magnet Magnet configurazon ( cell) Bending magnet Quadrupole magnet Setupole magnet Steering magnet InserPon center 5.3- m- long straight secpon (InserPons, RF, InjecPon).4- m- long straight secpon (MWP, Beam diagnospcs) InserPon center Bending magnet 5.3- m- long straight secpon (InserPons, RF, InjecPon) Quadrupole magnet

5 STORAGE RING 3. Magnet Setupole magnet Steering magnet VerPcal Horizontal Power supply maimum razng Bend. Quad. Set. Cable size sq, Length (m) Total resistance (Ω) Total voltage (V) Power (kw) Number of PS , QA (8) , PS- QB QB (56) , PS- QC QC (8) 9 50, PS- QD QD (84) 5 50, PS- SXA SXA (8) 9 00, PS- SXB SXB (8) 9 00, Name Magnet (number) Ima (A) PS- B B (56) PS- QA Sum 0.8 MW 9 STORAGE RING 4. Vacuum chamber Bending magnet seczon Straight seczon Absorber and pumping speed in a cell Absorber SR 400 ma (W) PSD (Pa/Ls) AB AB AB3 CR AB4 AB5 AB6 AB7 AB8 AB9 AB0 AB CR AB AB3 AB4 AB5 AB6 AB7 AB8 Total E E- 8.7E E- 5.6E- 5.0E E- 6 4.E- 5.4E- 5.E E E E- 5.6E- 5.0E E- 6 4.E- 5.4E- 5.E E E- 4 Required Pumping Speed* (L/s) * target pressure is e- 7 Pa 0

6 STORAGE RING 5. RF cavity TM00 cavity (under developing) Coupling tuner β ~ 3 HOM LOM absorber SiC slot ParasiZc modes impedance TM00 impedance is kept at inipal value w/o SiC absorber w/ SiC absorber Calculated (MAFIA) f (MHz) Mode TM00 Q R z (MΩ) 6.8 RF system 300 kw dummy load KLYSTRON R z /Q 0 3 V a (MV) 0.75@83kW Reflected power Magic T Forward power SiC absorber Phase shiwer TM00 mode is not absorbed 4 CaviPes STORAGE RING 6. InserPon devices Hard X- ray LifePme due to residual gas scahering is more than 0 < 0-7 Pa λ u (mm) N u K ma gap min (mm) ε photon (kev) Brilliance Type, polarizapon HXU ~ kev In- vacuum, Linear / Sov X- ray Brilliance / Flu min λ u (mm) N u K ma gap min (mm) ε photon (kev) Brilliance Type, polarizapon SXU ~ 0 Helical SXU ~ 0 Helical SXU / SXU /

7 STORAGE RING 6. InserPon devices MPW for hard- X conznuum 40 MPW* 80 Flu Density (ph/s/mrad /0.%b.w.) Brilliance K6.6,!u40mm K9.35,!u50mm 04 Bending@0.8 T 0 Photon Energy (kev) 00 Flu Density 0 3 K6.6,!u40mm K9.35,!u50mm Bending@0.8T - 00 In- vacuum, Linear - 00 ~ 07@several 0s kev In- vacuum, Linear - 00 ~ 06@several 0s kev Damping W., Linear Type, polarizapon fied Brilliance ~ 07@several 0s kev εphoton (kev) gapmin (mm) Brilliance (ph/s/mrad /mm /0.%b.w.) 0 50 MPW* Kma MPW Nu Power Density (kw/mrad ) λu (mm) 0 Photon Energy (kev) Power Density *not yet confirmed theta_/y (mrad) 00 K9.35 K K6.6 K6.6 Summary Typical inserpon devices are proposed. Details may change due to beamline applicapons. MPW will be used as subsptute for bending magnet. Though damping effect to reduce the emihance is epected, MPW s parameter is not yet Front- End BEAMLINE OpPcal hatch Beam shuher Undulator Front- End Absorber Double crystal monochromator XY- slit Epected maimum heat load is 0 kw/m. e. in SPring- 8: Power density of short period undulator ~ 800 kw/mrad Virtual undulator λu: 5 mm Nu: 90 Kma:.3 Absorber analysis Model: SP8 standard LocaPon: 0 m from source Irradiated power: 6.4 kw > Light receiving surface: 59 C Cooling surface: 89.6 C > SP8 standard absorber can receive radiapon power of SLiT- J inserpons Total power: 6.7 kw Power density: 64.3 kw/mrad Double- crystal monochromator DuMond plot FWHM Mirror Temperature distribupon Primary photon source Secondary photon source Δθ, Φ (μrad) Awer Si monochromator Eperimental hatch Condenser mirror Δλ/λ ( 0-4) Si crystal hν: 3 30 kev θb: 4 45 > Band width (energy resolupon) ΔE/E ~ Primary Secondary Higher photon flu at sample Small emihance at primary Shorter distance from primary 4 to secondary

8 INJECTOR Strategy Injector s beam should be very low emihance for efficient injecpon to the ring. Achievement of XFEL machine, SACLA, allows us to construct a compact full- energy injector linac. (c- band technology, high brilliant thermionic gun...) Sov- XFEL will be considered to be a net step of SLiT- J as the advanced light source facility. Target of injector linac Layout 0 m Beam energy E 3 GeV Energy spread ΔE/E < 0. % (rms) Pre- bunch compression for sufficient energy spread Energy stability δe < 0. % (rms) Bunch charge Q ~ nc (ma.) Charge stability δq ~ % Transverse emihance ε < 5 mm.mrad* (normlized) Bunch length σ τ < 5 ps RepePPon rate f rep 5 Hz (ma.) * mm.mrad required for FEL Sub- harmonic bunchers due to thermionic pulsed- DC gun For future XFEL C- band structures Longitudinal phase BC Epected power consumppon: 0. MW@Hz, MW@5H CONTROL and NETWORK Mission Rapid construcpon of the system. Stable support for machine commissioning and tuning. Saving energy in operapon. Reliable framework MADOCA II will be employed. Integrated control system Injector control I/F by MADOCA Unified accelerator control + other operapons Main control frame Ring control Beamline control Network structure SINET 0Gb Outside Firewall Open to public LAN IT LAN Commercial ISP Gb LVPN for companies Eperiment LAN Safety management Database Watching facility Development LAN Control Firewall Common informapon Control LAN