Diodes / LEDs. TD Sys1. FICHES A LIRE Diode / LED / Photodiode

Size: px

Start display at page:

Download "Diodes / LEDs. TD Sys1. FICHES A LIRE Diode / LED / Photodiode"

Aubrey Gardner
5 years ago
Views:

1 1A - S5 - ETI TD Sys1 Diodes / LEDs FICHES A LIRE Diode / LED / Photodiode Préparation 1. Tracer la caractéristique du courant traversant une diode en fonction de la différence de potentiel à ses bornes. 2. Chercher dans les documentations techniques (données en annexe) les points importants de cette caractéristique ainsi que les valeurs critiques pour : (a) une diode de signal 1N4148 (b) une diode de redressement 1N4002 (c) une diode Zener BZX55C51 (d) une LED rouge / bleue - WURTH ELECTRONICS Avez-vous compris? 1. On considère des diodes parfaites et idéales (figure 2a). (a) Que doivent valoir R 1 et R 2 pour obtenir la caractéristique tracée dans le graphe I() pour l ensemble dessiné en dessous? (b) Que devient cette caractéristique avec des diodes de seuil de 0,7, idéale par ailleurs? (c) Idem avec des diodes de résistance interne de 50 Ω. 2. On considère à présent le schéma et la caractéristique de la figure 2b. Les diodes ont pour seuil 0,6. Que doivent valoir R 1, R 2 et R 3 et le nombre de diodes N (N = 2 a été dessiné, mais à vous de trouver N) pour qu on obtienne la caractéristique tracée dans le graphe I()? 1

IOGS - Electronique pour le Traitement de l Information Travaux Dirigés Montage 1 - Pont à diodes Expliquer le fonctionnement des deux montages suivants.

2 IOGS - Electronique pour le Traitement de l Information Travaux Dirigés Montage 1 - Pont à diodes Expliquer le fonctionnement des deux montages suivants. ous pourrez, par exemple, tracer l allure du signal de sortie S pour une tension d entrée sinusoïdale e = A sin(ω t). Montage 2 - Diode Zener Expliquer le fonctionnement du montage suivant. Montage 3 - Diodes en direct et en inverse Expliquer le fonctionnement du montage suivant. ous pourrez expliquer ce qu il se passe lorsqu on applique en entrée le signal donné ci-dessous. 2

3 IOGS - Electronique pour le Traitement de l Information Travaux Dirigés Exercice - Stabilisateur de tension Une diode usuelle est caractérisée par avec une tension de seuil d = 0, 6 et une résistance r = 15Ω. Elle est utilisée dans le montage de la figure ci-contre. 1. La valeur moyenne de la tension d entrée est de E = 4, 5. On vise un courant I de 30 ma. Quelle doit être la valeur de la résistance R? Que vaut alors? 2. Quelle variation maximale de la tension d entrée ΔE peut-on autoriser pour que ne varie pas de plus de 1%? Que vaut alors ΔE/E? Justifier le nom de "stabilisateur de tension" de ce type de montage. Illustrer le fonctionnement du circuit à l aide de la droite de charge de la diode. 3. Quelle est la puissance dissipée dans chaque élément? Et au total? Les diodes ont été montées sur des circuits dont la technologie ne permet qu une mauvaise évacuation thermique : il faut limiter la dissipation thermique à seulement 20 mw dans une diode (pas de problème côté résistance, en revanche). 4. Quel montage proposez-vous pour absorber néaoins les 30 ma prévus? Fournit-il la même tension que précédemment? 5. Quel courant I peut-on dériver de la source "stabilisée" en tolérant, pour, une variation de - 15 m? (dans le montage initial et dans celui qui vous avez proposé à la question 4) 3

4 1N4148 ishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diode Electrically equivalent diodes: 1N4148-1N914 Material categorization: For definitions of compliance please see MECHANICAL DATA Case: DO-35 Weight: approx. 5 mg Cathode band color: black Packaging codes/options: TR/K per 13" reel (52 mm tape), 50K/box TAP/K per ammopack (52 mm tape), 50K/box APPLICATIONS Extreme fast switches PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4148 1N4148-TAP or 1N4148TR 4148 Single diode Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL ALUE UNIT Repetitive peak reverse voltage RRM 0 Reverse voltage R 75 Peak forward surge current tp = 1 μs IFSM 2 A Repetitive peak forward current IFRM 500 ma Forward continuous current IF 300 ma Average forward current R = 0 IF(A) 150 ma l = 4 mm, TL = 45 C Ptot 440 mw Power dissipation l = 4 mm, TL 25 C Ptot 500 mw THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL ALUE UNIT Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 175 C Storage temperature range Tstg - 65 to C Rev. 1.3, 04-Dec-13 1 Document Number: For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1N4148 ishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = ma F 1 Reverse current R = 20 IR 25 na R = 20, Tj = 150 C IR 50 μa R = 75 IR 5 μa Breakdown voltage IR = 0 μa, tp/t = 0.01, tp = 0.3 ms (BR) 0 Diode capacitance R = 0, f = 1 MHz, HF = 50 m CD 4 pf Rectification effiency HF = 2, f = 0 MHz r 45 % Reverse recovery time IF = IR = ma, ir = 1 ma IF = ma, R = 6, ir = 0.1 x IR, RL = 0 trr 8 ns trr 4 ns TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) I F = 0 ma ma 0.2 ma 1 m A T j = 25 C 0 Scattering Limit 0 Fig. 1 - Forward oltage vs. Junction Temperature Fig. 3 - Reverse Current vs. Reverse oltage Fig. 2 - Forward Current vs. Forward oltage Rev. 1.3, 04-Dec-13 2 Document Number: For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT F - Forward oltage () T j - Junction Temperature ( C) N Scattering Limit 1 IF - Forward Current (ma) - Reverse Current (na) IR R - Reverse oltage () T J = 25 C F - Forward oltage ()

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial Lead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general

5 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial Lead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general purpose low power applications. Features Shipped in Plastic Bags, 00 per bag Available Tape and Reeled, 5000 per reel, by adding a RL suffix to the part number Available in Fan Fold Packaging, 3000 per box, by adding a FF suffix to the part number Pb Free Packages are Available LEAD MOUNTED RECTIFIERS OLTS DIFFUSED JUNCTION Mechanical Characteristics Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for Seconds, 1/16 in. from case Polarity: Cathode Indicated by Polarity Band CASE 59 AXIAL LEAD PLASTIC MARKING DIAGRAM A 1N400x YYWW A = Assembly Location 1N400x = Device Number x = 1, 2, 3, 4, 5, 6 or 7 YY = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 October, 2012 Rev Publication Order Number: 1N4001/D 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 MAXIMUM RATINGS Rating Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit Peak Repetitive Reverse oltage Working Peak Reverse oltage DC Blocking oltage RRM RWM R Non Repetitive Peak Reverse oltage (halfwave, single phase, 60 Hz) RSM RMS Reverse oltage R(RMS) Average Rectified Forward Current (single phase, resistive load, 60 Hz, T A = 75 C) I O A Non Repetitive Peak Surge Current (surge applied at rated load conditions) I FSM 30 (for 1 cycle) A Operating and Storage Junction Temperature Range T J 65 to +175 C T stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Indicates JEDEC Registered Data THERMAL CHARACTERISTICS Rating Symbol Max Unit Maximum Thermal Resistance, Junction to Ambient RJA Note 1 C/W ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit Maximum Instantaneous Forward oltage Drop, (i F = Amp, T J = 25 C) v F Maximum Full Cycle Average Forward oltage Drop, (I O = Amp, T L = 75 C, 1 inch leads) F(A) 0.8 Maximum Reverse Current (rated DC voltage) (T J = 25 C) (T J = 0 C) I R A Maximum Full Cycle Average Reverse Current, (I O = Amp, T L = 75 C, 1 inch leads) I R(A) 30 A Indicates JEDEC Registered Data 2

6 BZX55-Series ishay Semiconductors Small Signal Zener Diodes FEATURES ery sharp reverse characteristic Low reverse current level ery high stability Low noise AEC-Q1 qualified Material categorization: For definitions of compliance please see APPLICATIONS PRIMARY CHARACTERISTICS oltage stabilization PARAMETER ALUE UNIT Z range nom. 2.4 to 75 Test current IZT 2.5; 5 ma Z specification Pulse current Int. construction Single ORDERING INFORMATION DEICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZX55-series BZX55-series-TR 000 per 13" reel /box BZX55-series BZX55-series-TAP 000 per ammopack (52 mm tape) /box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING DO mg UL 94-0 MOISTURE SENSITIITY LEEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 C/ s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL ALUE UNIT Power dissipation l = 4 mm, TL = 25 C Ptot 500 mw Zener current IZ Ptot/Z ma Junction to ambient air l = 4 mm, TL = constant RthJA 300 K/W Junction temperature Tj 175 C Storage temperature range Tstg - 65 to C Forward voltage (max.) IF = 200 ma F 1.5 Rev. 1.7, 06-May-13 1 Document Number: For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT BZX55-Series ishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) ZENER OLTAGE RANGE TEST CURRENT REERSE LEAKAGE CURRENT DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT PART NUMBER Z at IZT1 IZT1 IZT2 Tamb = 25 C IR at R ZZ at IZT1 ZZK at IZT2 Tamb = 150 C f = 1 khz TKZ ma μa %/K MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZX55C < 50 < 0 1 < 85 < BZX55C < < 50 1 < 85 < BZX55C < 4 < 40 1 < 85 < BZX55C < 2 < 40 1 < 85 < BZX55C < 2 < 40 1 < 85 < BZX55C < 2 < 40 1 < 85 < BZX55C < 1 < 20 1 < 75 < BZX55C < 0.5 < 1 < 60 < BZX55C < 0.1 < 2 1 < 35 < BZX55C < 0.1 < 2 1 < 25 < BZX55C < 0.1 < 2 2 < < BZX55C < 0.1 < 2 3 < 8 < BZX55C < 0.1 < 2 5 < 7 < BZX55C < 0.1 < < 7 < BZX55C < 0.1 < < < BZX55C < 0.1 < < 15 < BZX55C < 0.1 < < 20 < BZX55C < 0.1 < < 20 < BZX55C < 0.1 < 2 < 26 < BZX55C < 0.1 < 2 11 < 30 < BZX55C < 0.1 < 2 12 < 40 < BZX55C < 0.1 < 2 13 < 50 < BZX55C < 0.1 < 2 15 < 55 < BZX55C < 0.1 < 2 16 < 55 < BZX55C < 0.1 < 2 18 < 80 < BZX55C < 0.1 < 2 20 < 80 < BZX55C < 0.1 < 2 22 < 80 < BZX55C < 0.1 < 2 24 < 80 < BZX55C < 0.1 < 2 27 < 80 < BZX55C < 0.1 < 5 30 < 90 < BZX55C < 0.1 < 5 33 < 90 < BZX55C < 0.1 < 5 36 < 1 < BZX55C < 0.1 < 39 < 125 < BZX55C < 0.1 < 43 < 135 < BZX55C < 0.1 < 47 < 150 < BZX55C < 0.1 < 51 < 200 < BZX55C < 0.1 < 56 < 250 < Rev. 1.7, 06-May-13 2 Document Number: For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 A Dimensions: [mm] B Recommended land pattern: [mm] D Absolute Maximum Ratings (Ambient Temperature 25 C): Power dissipation Peak Forward Current Continuous Forward Current Reverse oltage ESD Threshold/ Human Body Modell Test conditions duty/@1khz P Diss I F Peak I F Rev ESD HBM alue Unit mw ma ma C Schematic: E General information: Operating temperature: -40 C to +85 C Storage temperature (sealed bag): -40 C to +85 C; 60% RH max. Moisture Sensitivity Level (MSL): 3 Optical : Chip Technology Emitting Color Lens Type alue AlInGaP Red Chip LED RE RS75000 Size: 0603 D Electrical & Optical : Peak Wavelength Dominant wavelength Luminous Intensity Forward oltage Spectral Bandwidth Reverse Current iewing Angle Test conditions 5 λ Peak λ Dom I F Δλ I Rev 2θ 50% min. 120 alue typ max. 2.4 Unit mcd μa RE RS75000 Size:

8 A Dimensions: [mm] B Recommended land pattern: [mm] D Absolute Maximum Ratings (Ambient Temperature 25 C): Power dissipation Peak Forward Current Continuous Forward Current Reverse oltage ESD Threshold/ Human Body Modell Test conditions duty/@1khz P Diss I F Peak I F Rev ESD HBM alue Unit mw ma ma C Schematic: E General information: Operating temperature: -40 C to +85 C Storage temperature (sealed bag): -40 C to +85 C; 60% RH max. Optical : Chip Technology Emitting Color Lens Type alue InGaN Blue Chip LED RE PLD BS75000 Size: 0805 D Electrical & Optical : Peak Wavelength Dominant wavelength Luminous Intensity Forward voltage Spectral Bandwidth Reverse Current iewing angle Test conditions 5 λ Peak λ Dom I F Δλ I Rev 2θ 50% min. 90 alue typ max. 3.5 Unit mcd μa RE PLD BS75000 Size: 0805

9 F iewing Angle: F Spectral: RE PLD BS75000 Size: 0805 F Forward Current vs. Forward oltage: F Luminous Intensity vs. Forward Current: RE PLD BS75000 Size: 0805

Small Signal Zener Diodes

Small Signal Zener Diodes BZX8-G-Series PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T ; specification Pulse current Int. construction Single FEATURES Silicon planar Zener diodes