First-Principles Modeling of Charge Transport in Molecular Junctions

Size: px
Start display at page:

Download "First-Principles Modeling of Charge Transport in Molecular Junctions"

Transcription

1 First-Principles Modeling of Charge Transport in Molecular Junctions Chao-Cheng Kaun Research Center for Applied Sciences, Academia Sinica Department of Physics, National Tsing Hua University September 6, 2010

2 Outline: 1. Introduction Why molecular electronics? 2. Conductance of single-molecule junctions Alkanedithiol [S-(CH 2 ) n -S] Alkanediisothiocyanate [SCN-(CH 2 )n-ncs] 3. Current-Driven Desorption at the Interface Cyclopentene on Si(100) 4. Summary

3 1. Introduction:

4

5

6 Transistors in Integrated Circuits 32 nm now What s the problem? Physical limit: Diffraction of light. Economical limitation: Too expensive.

7 Molecular electronics: A solution The main idea: use molecules to create analogues of today s IC chips. Because molecules are small and can form structures by self-assembly. Aviram & Ratner, (1974). For example..

8 Previous measurement and modeling: Science 278, 252 (1997) 500 times of difference! PRL 84, 979 (2000)

9 As the size of a device goes down, physics change Top Channel Length, L 1 mm 0.1 mm Macroscopic dimensions < L > S. Datta, RQMP presentation (2006) Bottom 10 μm 1 μ m 0.1 μm 10 nm 1 nm 0.1 nm Atomic dimensions

10 Ohm s law:? Coherence length: Elastic mean free path: Ballistic regime:

11 Our method: How to calculate current? Landauer formula: I ( V b ) 2e h 2 T ( E, V b ) f l f r de DFT plus non-equilibrium Green s functions: Taylor, Guo, Wang, PRB 63, (2001); Waldron, Haney, Larade, MacDonald, Guo, PRL 96, (2006) Nanodcal ( & ATK

12 Conventional DFT solves two kinds of problems: Finite isolated system Gaussian-03 Periodic systems VASP Quantum transport: A device is neither finite nor periodic, and is in nonequilibrium

13 Computational modeling Interaction region Bulk region Bulk region Electronic structure Density Functional Theory (GGA) LCAO Pseudopotentials Nonequilibrium physics Full description of electrodes using ab initio self-energies Non-equilibrium electron distribution using NEGF H Calculation of electron current

14 Outline: 1. Introduction Why molecular electronics? 2. Conductance of single-molecule junctions Alkanedithiol [S-(CH 2 ) n -S] Alkanediisothiocyanate [SCN-(CH 2 )n-ncs] 3. Current-Driven Desorption at the Interface Cyclopentene on Si(100) 4. Summary

15 Conductance of a Au nanowire: Nature 395, 780 (1998) Nano Lett. 6, 2362 (2006)

16 Conductance of a single molecule N. J. Tao et al, Science (2003)

17 Measurement on single alkanedithiol molecules R n R o exp( n) 1.05 N. J. Tao et al, JACS (2003); Science (2003)

18 Experimental results N. J. Tao et al, Faraday Discuss. 131, 145 (2006)

19 Previous modeling: Calculation Experiment N = 6 G = Unit: G 0

20 Our model: s s Calculation Experiment N = 6 G = N = 8 G = N = 10 G = Kaun & Seideman, Phys. Rev. B 77, (2008) Unit: G 0

21 Contact effect (N=6): a b dxy c pz Kaun & Seideman, Phys. Rev. B 77, (2008)

22 New experimental results: N. J. Tao et al, JACS, 128, 2135 (2006)?

23 Quantitative agreement? Muller, Phys. Rev. B, 73, (2006)

24 alkanediisothiocyanate [SCN-(CH 2 ) n -NCS] alkanedithiol [S-(CH 2 ) n -S]

25 Origin of high- and low-conductance traces in alkanediisothiocyanate single-molecule contacts Luzhbin & Kaun, Phys. Rev. B 81, (2010)

26 Luzhbin & Kaun, Phys. Rev. B 81, (2010)

27 Outline: 1. Introduction Why molecular electronics? 2. Conductance of single-molecule junctions Alkanedithiol [S-(CH 2 ) n -S] Alkanediisothiocyanate [SCN-(CH 2 )n-ncs] 3. Current-Driven Desorption at the Interface Cyclopentene on Si(100) 4. Summary

28 2. Current-Driven Desorption at the Interface: Cyclopentene on Si(100) Molecular electronic devices + silicon microelectronic technology The stability of organic molecules on semiconductors must be established.

29 Previous studies: benzene bound to Si(100) with π- orbital character Low-lying ionic resonances S. Alavi, et al., PRL 85, 5372 (2000). Saturated organic/silicon systems offer stability with respect to current-induced failure of silicon-based molecular electronics. S. N. Patitsas et al., Surf. Sci. 457, L425 (2000).

30 Desorption of cyclopentene from Si(100) Experimental results -2V, 0.1 na Elevated sample bias (threshold voltage: -2.5 and 3.5) -2V, 0.1 na N. L. Yoder et al., PRL 97, (2006); Current-Driven Phenomena in Nanoelectronics, chapter 7 (Pan Stanford, 2010)

31 Cyclopentene on Si(100): A saturated molecule Why threshold voltages is so small (-2.5 V and 3.5 V)?

32 A second question in experimental results Yield = N*e/(I*t) The yield is a factor of lower than for benzene/si(100) or chlorobenzene/si(111). A new avenue for desorption dynamics!

33 Our model: HOMO LUMO Cyclopentene Cyclopentene+Si Hybridization introduces new states into the gap N. L. Yoder et al., PRL 97, (2006); Current-Driven Phenomena in Nanoelectronics, chapter 7 (Pan Stanford, 2010)

34 PDOS peaks and the localized orbitals: The positive ion lifetime 94 fs The negative ion lifetime 257 fs

35 Geometries of cyclopentene on a Si 9 H 12 cluster: Neutral molecule Positive molecule Negative molecule

36 4. Sumary: Conductance are quantitative agree with experimental data The HC and LC may comes from the geometric configurations of electrodes Hybridization introduces new states into the gap leading to lower threshold voltages New desorption pathways are found in a cyclopentene/silicon system

37 Acknowledgements: Dr. A. Sen, Dr. D. A. Luzhbin N. L. Yoder, R. Jorn, T. Seideman and M. C. Hersam, Northwestern Univ., USA Prof. Y.-H. Tang, Dr. W. S. Su, Dr. K. Bagci, J.-H. Chen, C.-C. Su, S.-T. Pi, E. Chien, S.-T. Lin, C.-H. Hsu, Y.-C Chen, M. Lin, and Prof. C.-S. Tang.

Computational Modeling of Molecular Electronics. Chao-Cheng Kaun

Computational Modeling of Molecular Electronics. Chao-Cheng Kaun Computational Modeling of Molecular Electronics Chao-Cheng Kaun Research Center for Applied Sciences, Academia Sinica Department of Physics, National Tsing Hua University May 9, 2007 Outline: 1. Introduction

More information

Current-Driven Phenomena in NANOELECTRONICS. Edited by Tamar Seideman Northwestern University

Current-Driven Phenomena in NANOELECTRONICS. Edited by Tamar Seideman Northwestern University Current-Driven Phenomena in NANOELECTRONICS Edited by Tamar Seideman Northwestern University Published by Pan Stanford Publishing Pte. Ltd. Penthouse Level, Suntec Tower 3 8 Temasek Boulevard Singapore

More information

Momentum filtering effect in molecular wires

Momentum filtering effect in molecular wires PHYSICAL REVIEW B 70, 195309 (2004) Momentum filtering effect in molecular wires Chao-Cheng Kaun, 1, * Hong Guo, 1 Peter Grütter, 1 and R. Bruce Lennox 1,2 1 Center for the Physics of Materials and Department

More information

Nanoelectronics. Topics

Nanoelectronics. Topics Nanoelectronics Topics Moore s Law Inorganic nanoelectronic devices Resonant tunneling Quantum dots Single electron transistors Motivation for molecular electronics The review article Overview of Nanoelectronic

More information

Electron transport through molecular junctions and FHI-aims

Electron transport through molecular junctions and FHI-aims STM m metallic surface Electron transport through molecular junctions and FHI-aims Alexei Bagrets Inst. of Nanotechnology (INT) & Steinbuch Centre for Computing (SCC) @ Karlsruhe Institute of Technology

More information

Branislav K. Nikolić

Branislav K. Nikolić First-principles quantum transport modeling of thermoelectricity in nanowires and single-molecule nanojunctions Branislav K. Nikolić Department of Physics and Astronomy, University of Delaware, Newark,

More information

Session Chair: Prof. Haiping Cheng (University of Florida) Dr. Lei Shen. National University of Singapore

Session Chair: Prof. Haiping Cheng (University of Florida) Dr. Lei Shen. National University of Singapore B1. Modeling Quantum Transport at Nanoscale Chair(s): Chun ZHANG, National University of Singapore, Singapore Session s Title (if available) Tue - 17 Jan 2017 13:00 ~ 14:30 Room 2 Session Chair: Prof.

More information

Nanoscience, MCC026 2nd quarter, fall Quantum Transport, Lecture 1/2. Tomas Löfwander Applied Quantum Physics Lab

Nanoscience, MCC026 2nd quarter, fall Quantum Transport, Lecture 1/2. Tomas Löfwander Applied Quantum Physics Lab Nanoscience, MCC026 2nd quarter, fall 2012 Quantum Transport, Lecture 1/2 Tomas Löfwander Applied Quantum Physics Lab Quantum Transport Nanoscience: Quantum transport: control and making of useful things

More information

Speed-up of ATK compared to

Speed-up of ATK compared to What s new @ Speed-up of ATK 2008.10 compared to 2008.02 System Speed-up Memory reduction Azafulleroid (molecule, 97 atoms) 1.1 15% 6x6x6 MgO (bulk, 432 atoms, Gamma point) 3.5 38% 6x6x6 MgO (k-point sampling

More information

Title. I-V curve? e-e interactions? Conductance? Electrical Transport Through Single Molecules. Vibrations? Devices?

Title. I-V curve? e-e interactions? Conductance? Electrical Transport Through Single Molecules. Vibrations? Devices? Electrical Transport Through Single Molecules Harold U. Baranger, Duke University Title with Rui Liu, San-Huang Ke, and Weitao Yang Thanks to S. Getty, M. Fuhrer and L. Sita, U. Maryland Conductance? I-V

More information

Electroluminescence from Silicon and Germanium Nanostructures

Electroluminescence from Silicon and Germanium Nanostructures Electroluminescence from silicon Silicon Getnet M. and Ghoshal S.K 35 ORIGINAL ARTICLE Electroluminescence from Silicon and Germanium Nanostructures Getnet Melese* and Ghoshal S. K.** Abstract Silicon

More information

Outline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary

Outline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary Outline Introduction: graphene Adsorption on graphene: - Chemisorption - Physisorption Summary 1 Electronic band structure: Electronic properties K Γ M v F = 10 6 ms -1 = c/300 massless Dirac particles!

More information

Electron-phonon scattering from green s function transport combined with molecular dynamics: Applications to mobility predictions

Electron-phonon scattering from green s function transport combined with molecular dynamics: Applications to mobility predictions Electron-phonon scattering from green s function transport combined with molecular dynamics: Applications to mobility predictions Daniele Stradi www.quantumwise.com daniele.stradi@quantumwise.com Introduction

More information

Electrostatics of Nanowire Transistors

Electrostatics of Nanowire Transistors Electrostatics of Nanowire Transistors Jing Guo, Jing Wang, Eric Polizzi, Supriyo Datta and Mark Lundstrom School of Electrical and Computer Engineering Purdue University, West Lafayette, IN, 47907 ABSTRACTS

More information

International Journal of ChemTech Research CODEN (USA): IJCRGG ISSN: Vol.7, No.2, pp ,

International Journal of ChemTech Research CODEN (USA): IJCRGG ISSN: Vol.7, No.2, pp , International Journal of ChemTech Research CODEN (USA): IJCRGG ISSN: 0974-4290 Vol.7, No.2, pp 695-699, 2014-2015 ICONN 2015 [4 th -6 th Feb 2015] International Conference on Nanoscience and Nanotechnology-2015

More information

First-Principles Modeling of the Smallest Molecular Single Electron Transistor

First-Principles Modeling of the Smallest Molecular Single Electron Transistor Journal of Atomic, Molecular, Condensate & Nano Physics Vol. 2, No. 1, pp. 33 39, 2015 ISSN 2349-2716 (online); 2349-6088 (print) Published by RGN Publications http://www.rgnpublications.com First-Principles

More information

Büttiker s probe in molecular electronics: Applications to charge and heat transport

Büttiker s probe in molecular electronics: Applications to charge and heat transport Büttiker s probe in molecular electronics: Applications to charge and heat transport Dvira Segal Department of Chemistry University of Toronto Michael Kilgour (poster) Büttiker s probe in molecular electronics:

More information

Steady State Formalism for Electron Transfer through DNA System: Ladder Model

Steady State Formalism for Electron Transfer through DNA System: Ladder Model Steady State Formalism for Electron Transfer through DNA System: Ladder Model S. A. Al-Seadi 1, J. M. Al-Mukh 2, S. I. Easa 2 1 Department of Physics, College of Science, ThiQar University, Nassiriya,

More information

An ab initio approach to electrical transport in molecular devices

An ab initio approach to electrical transport in molecular devices INSTITUTE OF PHYSICSPUBLISHING Nanotechnology 13 (00) 1 4 An ab initio approach to electrical transport in molecular devices NANOTECHNOLOGY PII: S0957-4484(0)31500-9 JJPalacios 1,ELouis 1,AJPérez-Jiménez,ESanFabián

More information

Investigation of Terminal Group Effect on Electron Transport Through Open Molecular Structures

Investigation of Terminal Group Effect on Electron Transport Through Open Molecular Structures Commun. Theor. Phys. 59 (2013) 649 654 Vol. 59, No. 5, May 15, 2013 Investigation of Terminal Group Effect on Electron Transport Through Open Molecular Structures C. Preferencial Kala, 1 P. Aruna Priya,

More information

2D Materials with Strong Spin-orbit Coupling: Topological and Electronic Transport Properties

2D Materials with Strong Spin-orbit Coupling: Topological and Electronic Transport Properties 2D Materials with Strong Spin-orbit Coupling: Topological and Electronic Transport Properties Artem Pulkin California Institute of Technology (Caltech), Pasadena, CA 91125, US Institute of Physics, Ecole

More information

Supporting information

Supporting information Supporting information Design, Modeling and Fabrication of CVD Grown MoS 2 Circuits with E-Mode FETs for Large-Area Electronics Lili Yu 1*, Dina El-Damak 1*, Ujwal Radhakrishna 1, Xi Ling 1, Ahmad Zubair

More information

Computational electronics from atomic principles - basics of electronic transport. Hong Guo

Computational electronics from atomic principles - basics of electronic transport. Hong Guo Computational electronics from atomic principles - basics of electronic transport Hong Guo Center for the Physics of Materials and Dept. of Physics, McGill Univ., Montreal, Canada Introduction: need for

More information

are microscopically large but macroscopically small contacts which may be connected to a battery to provide the bias voltage across the junction.

are microscopically large but macroscopically small contacts which may be connected to a battery to provide the bias voltage across the junction. At present, we observe a long-lasting process of miniaturization of electronic devices. The ultimate limit for the miniaturization of electronic components is set by the atomic scale. However, in the case

More information

First-principles nonequilibrium analysis of STMinduced molecular negative-differential resistance on Si(100)

First-principles nonequilibrium analysis of STMinduced molecular negative-differential resistance on Si(100) Purdue University Purdue e-pubs Birck and NCN Publications Birck Nanotechnology Center July 2008 First-principles nonequilibrium analysis of STMinduced molecular negative-differential resistance on Si(100)

More information

Organic Electronic Devices

Organic Electronic Devices Organic Electronic Devices Week 5: Organic Light-Emitting Devices and Emerging Technologies Lecture 5.5: Course Review and Summary Bryan W. Boudouris Chemical Engineering Purdue University 1 Understanding

More information

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 ChiiDong Chen Institute of Physics, Academia Sinica chiidong@phys.sinica.edu.tw 02 27896766 Carbon contains 6 electrons: (1s) 2,

More information

Electrical conductivity of metal carbon nanotube structures: Effect of length and doping

Electrical conductivity of metal carbon nanotube structures: Effect of length and doping Bull. Mater. Sci., Vol. 37, No. 5, August 2014, pp. 1047 1051. Indian Academy of Sciences. Electrical conductivity of metal carbon nanotube structures: Effect of length and doping R NIGAM 1, *, S HABEEB

More information

Direct Measurement of Electron Transfer through a Hydrogen Bond

Direct Measurement of Electron Transfer through a Hydrogen Bond Supporting Information Direct Measurement of Electron Transfer through a Hydrogen Bond between Single Molecules Tomoaki Nishino,*, Nobuhiko Hayashi, and Phuc T. Bui Nanoscience and Nanotechnology Research

More information

Support information: (a) + + (b)

Support information: (a) + + (b) 1 upport information: Mechanism of the toddart-heath bistable rotaxane molecular switch Abstract The supporting information is organized as follows: ection 1 describes the real device and our strategy

More information

CITY UNIVERSITY OF HONG KONG. Theoretical Study of Electronic and Electrical Properties of Silicon Nanowires

CITY UNIVERSITY OF HONG KONG. Theoretical Study of Electronic and Electrical Properties of Silicon Nanowires CITY UNIVERSITY OF HONG KONG Ë Theoretical Study of Electronic and Electrical Properties of Silicon Nanowires u Ä öä ªqk u{ Submitted to Department of Physics and Materials Science gkö y in Partial Fulfillment

More information

Microscopy and Spectroscopy with Tunneling Electrons STM. Sfb Kolloquium 23rd October 2007

Microscopy and Spectroscopy with Tunneling Electrons STM. Sfb Kolloquium 23rd October 2007 Microscopy and Spectroscopy with Tunneling Electrons STM Sfb Kolloquium 23rd October 2007 The Tunnel effect T ( E) exp( S Φ E ) Barrier width s Barrier heigth Development: The Inventors 1981 Development:

More information

GW-like approaches to quantum transport. Rex Godby

GW-like approaches to quantum transport. Rex Godby GW-like approaches to quantum transport Rex Godby Outline Introduction to the quantum transport problem Ab initio quantum conductance in the presence of e e interaction (TDDFT / MBPT) 2 + Bothersome aspects

More information

Band calculations: Theory and Applications

Band calculations: Theory and Applications Band calculations: Theory and Applications Lecture 2: Different approximations for the exchange-correlation correlation functional in DFT Local density approximation () Generalized gradient approximation

More information

arxiv: v1 [cond-mat.mes-hall] 3 Apr 2014

arxiv: v1 [cond-mat.mes-hall] 3 Apr 2014 Gate Controlled Molecular Switch Based on picene-f4 TCNQ Charge-Transfer Material Torsten Hahn, Simon Liebing, and Jens Kortus We show that the recently synthesized charge-transfer material picene-f4 TCNQ

More information

Quantum Transport: electron-electron and electron-phonon effects. Rex Godby

Quantum Transport: electron-electron and electron-phonon effects. Rex Godby Quantum Transport: electron-electron and electron-phonon effects Rex Godby Outline Introduction to the quantum transport problem Ab initio quantum conductance in the presence of e-e interaction (TDDFT

More information

Supporting Information. Charge Transport Across Insulating. Self-Assembled Monolayers: Non-Equilibrium. Approaches and Modeling to Relate Current and

Supporting Information. Charge Transport Across Insulating. Self-Assembled Monolayers: Non-Equilibrium. Approaches and Modeling to Relate Current and Supporting Information Charge Transport Across Insulating Self-Assembled Monolayers: Non-Equilibrium Approaches and Modeling to Relate Current and Molecular Structure Fatemeh Mirjani,, Joseph M. Thijssen,

More information

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study JNS 2 (2013) 477-483 Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study Z. Ahangari *a, M. Fathipour b a Department of Electrical

More information

Lecture 04 Review of MOSFET

Lecture 04 Review of MOSFET ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D

More information

Electronic structure and transport in silicon nanostructures with non-ideal bonding environments

Electronic structure and transport in silicon nanostructures with non-ideal bonding environments Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 9-15-2008 Electronic structure and transport in silicon nanostructures with non-ideal bonding environments

More information

Lecture 12. Electron Transport in Molecular Wires Possible Mechanisms

Lecture 12. Electron Transport in Molecular Wires Possible Mechanisms Lecture 12. Electron Transport in Molecular Wires Possible Mechanisms In Lecture 11, we have discussed energy diagrams of one-dimensional molecular wires. Here we will focus on electron transport mechanisms

More information

The Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices

The Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices The Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices Zhiping Yu and Jinyu Zhang Institute of Microelectronics Tsinghua University, Beijing, China yuzhip@tsinghua.edu.cn

More information

Spectroscopy of nanostructures: from optics to transport

Spectroscopy of nanostructures: from optics to transport Spectroscopy of nanostructures: from optics to transport Angel Rubio NanoBio Spectroscopy Group, Dpto. Física de Materiales, Universidad del País Vasco, Centro Mixto CSIC UPV/EHU and DIPC Edificio Korta,

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

PHYSICAL REVIEW B 70, (2004) (Received 23 November 2003; revised manuscript received 16 March 2004; published 24 August 2004)

PHYSICAL REVIEW B 70, (2004) (Received 23 November 2003; revised manuscript received 16 March 2004; published 24 August 2004) PHYSICAL REVIEW B 70, 085410 (2004) Electron transport through molecules: Self-consistent and non-self-consistent approaches San-Huang Ke, 1,2 Harold U. Baranger, 2 and Weitao Yang 1 1 Department of Chemistry,

More information

Introduction to Molecular Electronics. Lecture 1: Basic concepts

Introduction to Molecular Electronics. Lecture 1: Basic concepts Introduction to Molecular Electronics Lecture 1: Basic concepts Conductive organic molecules Plastic can indeed, under certain circumstances, be made to behave very like a metal - a discovery for which

More information

From exhaustive simulations to key principles in DNA nanoelectronics

From exhaustive simulations to key principles in DNA nanoelectronics From exhaustive simulations to key principles in DNA nanoelectronics Dvira Segal Department of Chemistry University of Toronto Roman Korol (undergrad) Hyehwang Kim (undergrad) Michael Kilgour (grad) Challenge:

More information

Wafer-scale fabrication of graphene

Wafer-scale fabrication of graphene Wafer-scale fabrication of graphene Sten Vollebregt, MSc Delft University of Technology, Delft Institute of Mircosystems and Nanotechnology Delft University of Technology Challenge the future Delft University

More information

(Co-PIs-Mark Brongersma, Yi Cui, Shanhui Fan) Stanford University. GCEP Research Symposium 2013 Stanford, CA October 9, 2013

(Co-PIs-Mark Brongersma, Yi Cui, Shanhui Fan) Stanford University. GCEP Research Symposium 2013 Stanford, CA October 9, 2013 High-efficiency thin film nano-structured multi-junction solar James S. cells Harris (PI) (Co-PIs-Mark Brongersma, Yi Cui, Shanhui Fan) Stanford University GCEP Research Symposium 2013 Stanford, CA October

More information

First-Principle Studies on Adsorption of Cu + and Hydrated Cu + Cations on Clean Si(111) Surface

First-Principle Studies on Adsorption of Cu + and Hydrated Cu + Cations on Clean Si(111) Surface CHEM. RES. CHINESE UNIVERSITIES 2010, 26(3), 472 478 First-Principle Studies on Adsorption of Cu + and Hydrated Cu + Cations on Clean Si(111) Surface CHENG Feng-ming 1,2, SHENG Yong-li 1,3, LI Meng-hua

More information

Identifying the rate-limiting processes at the Li-air cathode

Identifying the rate-limiting processes at the Li-air cathode Identifying the rate-limiting processes at the Li-air cathode Tejs Vegge Risø DTU, National Laboratory for Sustainable Energy and Center for Atomic-scale Materials Design, Technical University of Denmark

More information

Molecular electronics. Lecture 2

Molecular electronics. Lecture 2 Molecular electronics Lecture 2 Molecular electronics approach Electrodes and contacts Basic requirement for molecular electronics: connection of the molecule of interest to the outside world, i.e. electrode

More information

Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System

Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System Nadya Mason Travis Dirk, Yung-Fu Chen, Cesar Chialvo Taylor Hughes, Siddhartha Lal, Bruno Uchoa Paul Goldbart University

More information

Chapter 4: Bonding in Solids and Electronic Properties. Free electron theory

Chapter 4: Bonding in Solids and Electronic Properties. Free electron theory Chapter 4: Bonding in Solids and Electronic Properties Free electron theory Consider free electrons in a metal an electron gas. regards a metal as a box in which electrons are free to move. assumes nuclei

More information

Role of Surface Chemistry on Charge Carrier Transport in Quantum Dot Solids

Role of Surface Chemistry on Charge Carrier Transport in Quantum Dot Solids Role of Surface Chemistry on Charge Carrier Transport in Quantum Dot Solids Cherie R. Kagan, University of Pennsylvania in collaboration with the Murray group Density of Electronic States in Quantum Dot

More information

Charge relaxation resistance at atomic scale: An ab initio calculation

Charge relaxation resistance at atomic scale: An ab initio calculation Title Charge relaxation resistance at atomic scale: An ab initio calculation Author(s) Wang, B; Wang, J Citation Physical Review B (Condensed Matter and Materials Physics), 2008, v. 77, article no. 245309

More information

Carbon Nanotubes in Interconnect Applications

Carbon Nanotubes in Interconnect Applications Carbon Nanotubes in Interconnect Applications Page 1 What are Carbon Nanotubes? What are they good for? Why are we interested in them? - Interconnects of the future? Comparison of electrical properties

More information

single-electron electron tunneling (SET)

single-electron electron tunneling (SET) single-electron electron tunneling (SET) classical dots (SET islands): level spacing is NOT important; only the charging energy (=classical effect, many electrons on the island) quantum dots: : level spacing

More information

New Volleyballenes: Y 20 C 60, La 20 C 60, and Lu 20 C 60

New Volleyballenes: Y 20 C 60, La 20 C 60, and Lu 20 C 60 New Volleyballenes: Y 20 C 60, La 20 C 60, and Lu 20 C 60 Jing Wang a and Ying Liu*,a,b a Department of Physics and Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang 050016, Hebei,

More information

DFT EXERCISES. FELIPE CERVANTES SODI January 2006

DFT EXERCISES. FELIPE CERVANTES SODI January 2006 DFT EXERCISES FELIPE CERVANTES SODI January 2006 http://www.csanyi.net/wiki/space/dftexercises Dr. Gábor Csányi 1 Hydrogen atom Place a single H atom in the middle of a largish unit cell (start with a

More information

Search for materials to harvest light

Search for materials to harvest light Solar nanocomposites with complementary charge extraction pathways for electrons and holes: Si embedded in ZnS S. Wippermann, M. Vörös, F. Gygi, A. Gali, G. Zimanyi, G. Galli NanoMatFutur DPG-2014, 04/03/2014

More information

Canadian Journal of Chemistry. Spin-dependent electron transport through a Mnphthalocyanine. Draft

Canadian Journal of Chemistry. Spin-dependent electron transport through a Mnphthalocyanine. Draft Spin-dependent electron transport through a Mnphthalocyanine molecule: an SS-DFT study Journal: Manuscript ID cjc-216-28 Manuscript Type: Article Date Submitted by the Author: 6-Jun-216 Complete List of

More information

Lecture 28 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 18, 2007

Lecture 28 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 18, 2007 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 28-1 Lecture 28 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 18, 2007 Contents: 1. Second-order and

More information

Electronic Supporting Information for

Electronic Supporting Information for Electronic Supplementary Material (ESI) for Materials Horizons. This journal is The Royal Society of Chemistry 2015 Electronic Supporting Information for Probing the Energy Levels in Hole-doped Molecular

More information

3-month progress Report

3-month progress Report 3-month progress Report Graphene Devices and Circuits Supervisor Dr. P.A Childs Table of Content Abstract... 1 1. Introduction... 1 1.1 Graphene gold rush... 1 1.2 Properties of graphene... 3 1.3 Semiconductor

More information

Goal: To use DNA self-assembly to overcome the challenges of optical and e-beam lithography in creating nanoscale circuits.

Goal: To use DNA self-assembly to overcome the challenges of optical and e-beam lithography in creating nanoscale circuits. Goal: To use DNA self-assembly to overcome the challenges of optical and e-beam lithography in creating nanoscale circuits. PI Paul Rothemund, computer scientist, Senior Research Associate (research faculty)

More information

Tunable Band Gap of Silicene on Monolayer Gallium Phosphide Substrate

Tunable Band Gap of Silicene on Monolayer Gallium Phosphide Substrate 2017 International Conference on Energy Development and Environmental Protection (EDEP 2017) ISBN: 978-1-60595-482-0 Tunable Band Gap of Silicene on Monolayer Gallium Phosphide Substrate Miao-Juan REN

More information

Electronic structure mechanism of spin-polarized electron transport in a Ni C 60 Ni system

Electronic structure mechanism of spin-polarized electron transport in a Ni C 60 Ni system Chemical Physics Letters 439 (27) 11 114 www.elsevier.com/locate/cplett Electronic structure mechanism of spin-polarized electron transport in a Ni C 6 Ni system Haiying He a, Ravindra Pandey a, *, Shashi

More information

Coulomb blockade and single electron tunnelling

Coulomb blockade and single electron tunnelling Coulomb blockade and single electron tunnelling Andrea Donarini Institute of theoretical physics, University of Regensburg Three terminal device Source System Drain Gate Variation of the electrostatic

More information

EE650R: Reliability Physics of Nanoelectronic Devices Lecture 18: A Broad Introduction to Dielectric Breakdown Date:

EE650R: Reliability Physics of Nanoelectronic Devices Lecture 18: A Broad Introduction to Dielectric Breakdown Date: EE650R: Reliability Physics of Nanoelectronic Devices Lecture 18: A Broad Introduction to Dielectric Breakdown Date: Nov 1, 2006 ClassNotes: Jing Li Review: Sayeef Salahuddin 18.1 Review As discussed before,

More information

Extrinsic Origin of Persistent Photoconductivity in

Extrinsic Origin of Persistent Photoconductivity in Supporting Information Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors Yueh-Chun Wu 1, Cheng-Hua Liu 1,2, Shao-Yu Chen 1, Fu-Yu Shih 1,2, Po-Hsun Ho 3, Chun-Wei

More information

Charge fluctuators, their temperature and their response to sudden electrical fields

Charge fluctuators, their temperature and their response to sudden electrical fields Charge fluctuators, their temperature and their response to sudden electrical fields Outline Charge two-level fluctuators Measuing noise with an SET Temperature and bias dependence of the noise TLF temperature

More information

Quantum Transport Beyond the Independent-Electron Approximation. Rex Godby

Quantum Transport Beyond the Independent-Electron Approximation. Rex Godby Quantum Transport Beyond the Independent-Electron Approximation Rex Godby Outline Introduction to the quantum transport problem Ab initio quantum conductance in the presence of e e interaction (TDDFT /

More information

Fig. 8.1 : Schematic for single electron tunneling arrangement. For large system this charge is usually washed out by the thermal noise

Fig. 8.1 : Schematic for single electron tunneling arrangement. For large system this charge is usually washed out by the thermal noise Part 2 : Nanostuctures Lecture 1 : Coulomb blockade and single electron tunneling Module 8 : Coulomb blockade and single electron tunneling Coulomb blockade and single electron tunneling A typical semiconductor

More information

www.iue.tuwien.ac.at/wigner-wiki/ quantum r rmnh h h E a n = a E b n = b h h h n = 1 n = 1 n = 1 0.53 h h n h cos sin 1 1 N ψ = 1 N! ϕ n1 (x 1 ) ϕ n2 (x 1 ) ϕ nn (x 1 ) ϕ n1 (x 2 ) ϕ n2 (x 2

More information

Saroj P. Dash. Chalmers University of Technology. Göteborg, Sweden. Microtechnology and Nanoscience-MC2

Saroj P. Dash. Chalmers University of Technology. Göteborg, Sweden. Microtechnology and Nanoscience-MC2 Silicon Spintronics Saroj P. Dash Chalmers University of Technology Microtechnology and Nanoscience-MC2 Göteborg, Sweden Acknowledgement Nth Netherlands University of Technology Sweden Mr. A. Dankert Dr.

More information

Olivier Bourgeois Institut Néel

Olivier Bourgeois Institut Néel Olivier Bourgeois Institut Néel Outline Introduction: necessary concepts: phonons in low dimension, characteristic length Part 1: Transport and heat storage via phonons Specific heat and kinetic equation

More information

Quantum Transport in Ultracold Atoms. Chih-Chun Chien ( 簡志鈞 ) University of California, Merced

Quantum Transport in Ultracold Atoms. Chih-Chun Chien ( 簡志鈞 ) University of California, Merced Quantum Transport in Ultracold Atoms Chih-Chun Chien ( 簡志鈞 ) University of California, Merced Outline Introduction to cold atoms Atomtronics simulating and complementing electronic devices using cold atoms

More information

RSC Advances.

RSC Advances. This is an Accepted Manuscript, which has been through the Royal Society of Chemistry peer review process and has been accepted for publication. Accepted Manuscripts are published online shortly after

More information

How a single defect can affect silicon nano-devices. Ted Thorbeck

How a single defect can affect silicon nano-devices. Ted Thorbeck How a single defect can affect silicon nano-devices Ted Thorbeck tedt@nist.gov The Big Idea As MOS-FETs continue to shrink, single atomic scale defects are beginning to affect device performance Gate Source

More information

Electro-Thermal Transport in Silicon and Carbon Nanotube Devices E. Pop, D. Mann, J. Rowlette, K. Goodson and H. Dai

Electro-Thermal Transport in Silicon and Carbon Nanotube Devices E. Pop, D. Mann, J. Rowlette, K. Goodson and H. Dai Electro-Thermal Transport in Silicon and Carbon Nanotube Devices E. Pop, D. Mann, J. Rowlette, K. Goodson and H. Dai E. Pop, 1,2 D. Mann, 1 J. Rowlette, 2 K. Goodson 2 and H. Dai 1 Dept. of 1 Chemistry

More information

Modeling Transport in Heusler-based Spin Devices

Modeling Transport in Heusler-based Spin Devices Modeling Transport in Heusler-based Spin Devices Gautam Shine (Stanford) S. Manipatruni, A. Chaudhry, D. E. Nikonov, I. A. Young (Intel) Electronic Structure Extended Hückel theory Application to Heusler

More information

2. TranSIESTA 1. SIESTA. DFT In a Nutshell. Introduction to SIESTA. Boundary Conditions: Open systems. Greens functions and charge density

2. TranSIESTA 1. SIESTA. DFT In a Nutshell. Introduction to SIESTA. Boundary Conditions: Open systems. Greens functions and charge density 1. SIESTA DFT In a Nutshell Introduction to SIESTA Atomic Orbitals Capabilities Resources 2. TranSIESTA Transport in the Nanoscale - motivation Boundary Conditions: Open systems Greens functions and charge

More information

Dmitry Ryndyk. December 20, 2007, Dresden. In collaboration with Pino D Amico, Klaus Richter, and Gianaurelio Cuniberti

Dmitry Ryndyk. December 20, 2007, Dresden. In collaboration with Pino D Amico, Klaus Richter, and Gianaurelio Cuniberti Memory effect in electron-vibron systems Dmitry Ryndyk December 20, 2007, Dresden In collaboration with Pino D Amico, Klaus Richter, and Gianaurelio Cuniberti Complex Quantum Systems Institute for Theoretical

More information

JFETs - MESFETs - MODFETs

JFETs - MESFETs - MODFETs Technische Universität raz Institute of Solid State Physics JFETs - MESFETs - MOFETs JFET n n-channel JFET S n-channel JFET x n 2 ( Vbi V) en S p-channel JFET 2 Pinch-off at h = x en n h Vp 2 V p = pinch-off

More information

Designing Principles of Molecular Quantum. Interference Effect Transistors

Designing Principles of Molecular Quantum. Interference Effect Transistors Suorting Information for: Designing Princiles of Molecular Quantum Interference Effect Transistors Shuguang Chen, GuanHua Chen *, and Mark A. Ratner * Deartment of Chemistry, The University of Hong Kong,

More information

Sfb 658 Colloquium 11 May Part II. Introduction to Two-Photon-Photoemission (2PPE) Spectroscopy. Martin Wolf

Sfb 658 Colloquium 11 May Part II. Introduction to Two-Photon-Photoemission (2PPE) Spectroscopy. Martin Wolf Sfb 658 Colloquium 11 May 2006 Part II Introduction to Two-Photon-Photoemission (2PPE) Spectroscopy Martin Wolf Motivation: Electron transfer across interfaces key step for interfacial and surface dynamics

More information

Applications of Gaussian Process Model in Molecular Dynamics University of British Columbia Vancouver, Canada. Roman Krems

Applications of Gaussian Process Model in Molecular Dynamics University of British Columbia Vancouver, Canada. Roman Krems Applications of Gaussian Process Model in Molecular Dynamics University of British Columbia Vancouver, Canada Roman Krems Gaussian Process Model for Collision Dynamics of Complex Molecules, Jie Cui and

More information

Molecular Electronics

Molecular Electronics Molecular Electronics An Introduction to Theory and Experiment Juan Carlos Cuevas Universidad Autönoma de Madrid, Spain Elke Scheer Universität Konstanz, Germany 1>World Scientific NEW JERSEY LONDON SINGAPORE

More information

Measurement of Current-Induced Local Heating in a Single Molecule Junction

Measurement of Current-Induced Local Heating in a Single Molecule Junction Measurement of Current-Induced Local Heating in a Single Molecule Junction NANO LETTERS 2006 Vol. 6, No. 6 1240-1244 Zhifeng Huang, Bingqian Xu, Yuchang Chen, Massimiliano Di Ventra,*, and Nongjian Tao*,

More information

High Quality Thin Graphene Films from Fast. Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan

High Quality Thin Graphene Films from Fast. Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan Supporting Materials High Quality Thin Graphene Films from Fast Electrochemical Exfoliation Ching-Yuan Su, Ang-Yu Lu #, Yanping Xu, Fu-Rong Chen #, Andrei N. Khlobystov $ and Lain-Jong Li * Research Center

More information

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors David Jiménez Departament d'enginyeria Electrònica, Escola d'enginyeria, Universitat Autònoma de Barcelona,

More information

Evaluation of Electronic Characteristics of Double Gate Graphene Nanoribbon Field Effect Transistor for Wide Range of Temperatures

Evaluation of Electronic Characteristics of Double Gate Graphene Nanoribbon Field Effect Transistor for Wide Range of Temperatures Evaluation of Electronic Characteristics of Double Gate Graphene Nanoribbon Field Effect Transistor for Wide Range of Temperatures 1 Milad Abtin, 2 Ali Naderi 1 Department of electrical engineering, Masjed

More information

wire z axis Under these assumptions, if we model the electrons by plane waves in the z direction we get n E, n, 1,2,

wire z axis Under these assumptions, if we model the electrons by plane waves in the z direction we get n E, n, 1,2, Part 4. Two Terminal Quantum Wire Devices Part 4. Two Terminal Quantum Wire Devices Let s consider a quantum wire between two contacts. As we saw in Part, a quantum wire is a one-dimensional conductor.

More information

Image courtesy of Keith Schwab http://www.lbl.gov/science-articles/archive/afrd Articles/Archive/AFRD-quantum-logic.html http://www.wmi.badw.de/sfb631/tps/dqd2.gif http://qist.lanl.gov/qcomp_map.shtml

More information

Nanomaterials for Plasmonic Devices. Lih J. Chen

Nanomaterials for Plasmonic Devices. Lih J. Chen Nanomaterials for Plasmonic Devices Lih J. Chen Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan Papers on Plasmon: 75,000 (6/25/2018) Papers on Plasmonics:

More information

Planar Organic Photovoltaic Device. Saiful I. Khondaker

Planar Organic Photovoltaic Device. Saiful I. Khondaker Planar Organic Photovoltaic Device Saiful I. Khondaker Nanoscience Technology Center and Department of Physics University of Central Florida http://www.physics.ucf.edu/~khondaker W Metal 1 L ch Metal 2

More information

Electron Transport in Molecular Wire Junctions. Abraham Nitzan 1 and Mark A. Ratner 2

Electron Transport in Molecular Wire Junctions. Abraham Nitzan 1 and Mark A. Ratner 2 REVIEW Electron Transport in Molecular Wire Junctions Abraham Nitzan 1 and Mark A. Ratner 2 Molecular conductance junctions are structures in which single molecules or small groups of molecules conduct

More information

Kinetic equation approach to the problem of rectification in asymmetric molecular structures

Kinetic equation approach to the problem of rectification in asymmetric molecular structures Kinetic equation approach to the problem of rectification in asymmetric molecular structures Kamil Walczak Institute of Physics, Adam Mickiewicz University Umultowska 85, 6-64 Poznań, Poland Transport

More information