single-electron electron tunneling (SET)

Transcription

1 single-electron electron tunneling (SET) classical dots (SET islands): level spacing is NOT important; only the charging energy (=classical effect, many electrons on the island) quantum dots: : level spacing (quantum confinement) AND charging energy important (few electrons on the dot)

2 charging energy: E C =e 2 /2C What is the capacitance of an isolated piece of metal (for example a sphere)? What is the energy needed to charge the sphere with one electron (1/2QV with Q = e)?

3 capacitances isolated sphere (dot): C sphere = ε 0 ε r 2πd nanotube Au isolated disk: C disk = ε 0 ε r 4d Cr SiO 2 parallel plate: C parallel plate = ε 0 ε r A/d doped-si (backgate) nanotube with diameter, r, above a ground plane at distance h: C NT = ε 0 ε r 2 π L / ln(2h/r) quick estimate: capacitance per unit length: C = ε 0 ε r = ε r 10 af/µm

4 contacting (metallic) nano-scale objects

5 tunnel junction

6 current versus voltage biased current biased voltage biased In practice, it is very difficult to establish current biasing in a single junction circuit. The impedance of air is of the order of hundred Ohms, thereby shunting the high resistance of the current source. One needs to create high resistances within a micron distance (otherwise shunting at high frequencies) of the junction to prevent this. One can use other tunnel junctions (SET transistor) or very thin disordered metals as leads. I = eγ voltage biased current biased

7 single tunnel junction connected to highresistance leads resistance leads: Cr 5-10 nm thick Kuzmin and Haviland, Physica Scripta T42 (1992) 171

8 the island: single-electron box No current flows Q V Island

9 the island: single-electron box

10 measured charge quantization in a normal and superconducting single-electron box e 2e

11 double-barrier circuit: single-electron transistor SOURCE e DRAIN ISLAND GATE V sd V g I

12 current through single-electron transistor schematic I-V characteristic energy diagrams blockade: no current flows current flows µ(ν+1) µ(ν+1) 2E C m S DE ev m(n) m md D 2E C ev m S m(n) m D -e/c e/c µ S µ(ν) µ D µ S µ(ν) DE md µ D Why starts the current to flow at e/c and not at e/2c as before?

13 gate traces and stability diagram inside the Coulomb diamonds: the number of electrons on the island is fixed and no current flows outside the Coulomb islands: the number of electrons fluctuates and current flows (gray area) V sd I = 0 I 0 low-bias gate trace V G N-3 N-2 N-1 N N+1 N+2 V G N-3 N-2 N-1 N N+1 N+2

14 Coulomb diamonds m S 2E C m(n) m D ev µ S µ(ν+1) µ(ν) DE md µ D V C (N) V C (N+1) e 2 /C V = β(v G -V c (N)) V =- γ(v G -V c (N+1)) ev 2E m(n) C m D m S µ S µ(ν+1) µ(ν) DE md µ D µ(ν+1) 2E C m S DE ev µ S m(n) m D µ(ν) µ D V sd V =- γ(v G -V c (N)) V G e 2 /αc V = β(v G -V c (N+!)) The lines define a region in which there is no current. This region is called the Coulomb diamond. At zero bias, current flows at the degeneracy points indicated in blue below. µ(ν+1) 2E C m ev S DE µ S m(n) m D µ(ν) µ D

15 Coulomb diamonds: the equations e 2 /C V =- γ(v G -V c (N+1)) V = β(vg -V c (N)) V C (N) V C (N+1) V sd e 2 /αc V = β(vg -V c (N+!)) V =- γ(v G -V c (N)) V G

16 offset-charges A sudden change in the electrostatic environment of the island (e.g. an electron in the gate oxide that moves from one trap to another) may cause a sudden change in the off-set charge Q 0 on the island: a switch in the stability diagram occurs. The offset charge can take any value is it is due to a polarization of the island. These offset charges are a problem for more complicated SET circuits, because they are random. Each junction can have its own Q 0, making it difficult to predict device operation. V sd I=0 V G N-3 N-2 N-1 N N N+1 N+2 V G How does the low-bias gate trace looks like in the case of such a switch event?

17 first measurements Coulomb effects differential resistance vs. current: high resistance for small bias Sn disk like metallic (superconducting) particles inbedded in aluminium-oxide matrix; diameter particles >2 nm Figures: V C (V off ) = e/2c 1-2 mev C 100 af E C = 10 K differential resistance vs. current: temperature dependence At low temperatures the low-bias (diff.) resistance increases due to the opening of the E C gap I. Giaever and H.R. Zeller, Phys. Rev. Lett. 20 (1998) 1504

18 Aluminum tunnel junctions fabricated with a shadow evaporation method Main figure: V C (V off ) = e/2c = mev C = ff

19 As we have seen before from the stability diagrams all capacitances can be obtained.

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21 temperature effects peak shape:

22 asymmetric coupling: Coulomb staircase In case of asymmetric coupling, one barrier is much thicker than the other (tunneling through is more difficult). In this case, an electron on the island when tunneling to the thick barrier to the drain has to wait a long time before this to happen. If the bias is large enough to provide enough energy a second electron can hop on the dot, thereby suddenly increasing the probability for electrons to be transported. The result is a step-wise increase of the current (Coulomb staircase). For symmetric barriers this is less likely to happen; the electron already tunnels out before the next one comes in. Matsumoto et al., Appl. Phys. Lett. 68 (1996) 34

23 SET applications sensitive charge measurements (10-5 e/ Hz) current standard (turnstile) Experiment: SETs 3 and 4 work as electrometers to measure charges at the islands 1 and 2 Single-electron logic, memory issues: random offset charges room-temperature operation

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25 classical dots vs. quantum dots addition energy contains level spacing current-voltage characteristic and T-dependence Coulomb peak are different level spectroscopy: discrete energy spectrum can be measured quantum dots: manipulation of a single electron in the dot single molecule self-assembled QD semiconducting QD nanotube 1 nm 10 nm 100 nm 1µm

26 classical dot: regular spaced Coulomb peaks quantum dot: irregular spaced Coulomb peaks

27 few-electron electron quantum dots 10 di/dv sd at B = 0 T V sd (mv) N = V g (V) Kouwenhoven et al., Science 278, 1788 (`97)

28 single-wall nanotube quantum dot Give an estimate of the charging energy and the level spacing. Compare the level spacing with the theoretical value.

29 current-voltage characteristic quantum dot Current-voltage characteristic shows stepwise increase (discrete level structure on the dot; note the difference in the energy diagram with a classical dot)! Conductance on resonance reaches the conductance quantum value indicating perfect transmission, despite the fact that the two individual barriers can have T<<1!!!! low bias:blockade µ µ(n +1) (N µ ) ( N) µ (N ) µ S Sµ(N-1) V G +e/c µ D high bias: transport µ µ(n +1) (N µ ) ( N) µ (N ) µ S Sµ(N-1) V G µ D ev 1.0 model: one level located 5 mev from the Fermi 1.0 I/I max 0.0 di/dv 0.5 E 0 = 5 mev Voltage (mv) Why is the total gap 20 mev and not 5 or 10? Voltage (mv)

30 temperature effects: zero-bias conductance quantum dots Quantum dots: the conductance increases as temperature is lowered and approaching perfect transmission for T 0 (resonant transmission) (classical dots: peak height remains the same!!!!) di/dv (µs) 1 T = 0.3 K T = 1 K T = 3 K di/dv max (µs) 4 2 FWHM (mv) T (K) V G (mv) T (K) Left: Temperature dependence of the Coulomb peak height in the resonant transport model showing the characteristic increase as temperature is lowered. Right: peak height as a function of temperature. The inset shows the full width half maximum (FWHM) of the Coulomb peak as a function of temperature (see next slides). Calculations are performed with Γ = /s and a gate coupling of 0.1 in the regime Γ <k B T.

31 full-width half maximum conductance peaks

32 experimental low-bias peak shapes quantum classical T-independent 4.52 hγ << k B T hγ >> k B T 3.5 transition to quantum regime at low T Foxman et al., Phys. Rev. B 50 (1994) Foxman et al., Phys. Rev. B 47 (1993) 10020

33 the first nanotube quantum dot step-wise increase in I-V irregular gate trace Coulomb peak height increases when temperature is lowered

34 summary different regimes zero-bias conductance

35 level spectroscopy: excited states µ(n +1) µ e (N ) E mµs S µ(n) DE m(n) mµ D µs m (N) mµ D D when an excited level enters the transport window, an additional transport channel opens up leading to a step-wise increase of the current. In the differential resistance (which is often plotted in the stability diagram), these steps appear as lines running parallet to the diamond edges (red lines) V sd 0 E N N+1 the energy of the excited state can directly be read off from the diagram as indicated in the figure excitations can probe electronic spectrum, spin or vibrational states V G

36 manipulating single charges Top: Schematic drawing of the ground state (GS) filling and the excited states (ES). Left: the island contains one electron and the first excited state involves a transition to the nearest unoccupied level. (In zero magnetic field there is an equal probability to find a down spin on the dot.) Right: two electrons with opposite spin occupy the lowest level. The first excited state involves the promotion of one of the spins to the nearest unoccupied level. A ferromagnetic coupling favors a spin flip. The antiparallel configuration (ES 2 ) has a higher energy. Bottom: corresponding stability diagram. 2 1 GS N=1 di/dv ES GS ES 1 N=2 ES 2 How large are the excitation energies for the N=2 case? V 0 1 /e N = 1 N = 2 V G

37 metallic SWNTs: : full understanding of level structure including excited states measurements L = 180 nm calculation Nanotubes: two levels with two electrons = 9.0 mev ( = hv F /2L); E c = 4.3 mev δ = 3.2 mev; J = 0.4 mev µ 1 ex = δ µ 2 ex = δ J S. Sapmaz et al. PRB 71 (2005)

38 H. Park et al. Nature 407, 57 (2000) vibration assisted tunnelling in a C 60 transistor single electron tunneling events excite and probe the mechanical motion of the C60 bucky ball vibrational mode adds another transport channel: step in currentvoltage characteristic

39 V G V G not so weak coupling to the leads: higher- order processes (Γ~U)( µ(n +1) µ(n +1) µ(n +1) µ(n +1) mµ m S DE S µ e (N) DE m m(n) mµ µ m µ m(n) Ε D S mµ S DE S DE D m(n) Ε m(n) mµ m md D µ D µ (Ν) µ (Ν) µ (Ν) µ S inelastic co-tunneling: excitation spectrum Kondo-effect (elastic): spin filling V sd 0 E N N+1 V sd 0 even odd