OVERSEAS SUBSIDIARIES AND AFFILIATES (E) Toshiba America Electronic Components, Inc. Headquarters-Irvine, CA 9775 Toledo Way, Irvine, CA 92718,
|
|
|
- Oliver Dickerson
- 5 years ago
- Views:
Transcription
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
254
255
256
257
258
259
260
261
262
263
264
265
266
267
268
269
270
271
272
273
274
275
276
277
278
279
280
281
282
283
284
285
286
287
288
289
290
291
292
293
294
295
296
297
298
299
300
301
302
303
304
305
306
307
308
309
310
311
312
313
314
315
316
317
318
319
320
321
322
323
324
325
326
327
328
329
330
331
332
333
334 OVERSEAS SUBSIDIARIES AND AFFILIATES (E) Toshiba America Electronic Components, Inc. Headquarters-Irvine, CA 9775 Toledo Way, Irvine, CA 92718, U.S.A. Tel: (714) Fax: (714) Altamonte Springs, FL(Orland) 600 S, North Lake Blvd., Suite 250, Altamonte Springs, FL 32701, U.S.A. Tel: (407) Fax: (407) Deerfield, IL(Chicago) One Pkwy., North, Suite 500, Deerfield, IL , U.S.A. Tel: (847) Fax: (847) Denver, CO 8400 E, Prentice Englewood, CO 80111, U.S.A. Tel: (303) Fax: (303) Edison, NJ 2035 Lincoln Hwy. Ste. #3000, Edison NJ 08817, U.S.A. Tel: (908) Fax: (908) Irvine, CA 2 Venture Plaza, Suite 500, Irvine, CA 92718, U.S.A. Tel: (714) Fax: (714) Microelectronics Center-Sunnyvale, CA 1220 Midas Way, Sunnyvale, CA , U.S.A. Tel: (408) Fax: (408) Norcross, GA(Atlanta) 655 Engineering Dr. #160, Norcross, GA 30092, U.S.A. Tel: (404) Fax: (404) Richardson, TX(Dallas) 777 East Campbell Rd., Suite 650, Richardson, TX 75081, U.S.A. Tel: (214) Fax: (214) Wakefield, MA(Boston) 401 Edgewater Place, Suite #360, Wakefield, Essex, MA , U.S.A. Tel: (617) Fax:(617) San Jose Engineering Center, CA 1060 Rincon Circle, San Jose, CA 95131, U.S.A. Tel: (408) Fax: (408) Toshiba Electronics Europe GmbH Düsseldorf Head Office Hansaallee 181, D Düsseldorf Germany Tel: (0211) Fax: (0211) München Office Büro München Hofmannstrasse 52, D-81378, München, Germany Tel: (089) Fax: (089) Toshiba Electronics France SARL Immeuble Robert Schumann 3 Rue de Rome, F-93561, Rosny-Sous-Bois, Cedex, France Tel: (1) Fax: (1) Toshiba Electronics Italiana S.R.L. Centro Direzionale Colleoni Palazzo Perseo Ingr. 2-Piano 6, Via Paracelso n.12, Agrate Brianza Milan, Italy Tel: (039)68701 Fax:(039) Toshiba Electronics España, S.A. Parque Empresarial San Fernando Edificio Europa, 1 a Planta, ES Madrid, Spain Tel: (91) Fax:(91) Toshiba Electronics(UK) Limited Riverside Way, Camberley Surrey, GU15 3YA, U.K. Tel: (01276) Fax: (01276) Toshiba Electronics Scandinavia AB Gustavslundsvägen 12, 2nd Floor S Bromma, Sweden Tel: (08) Fax: (08) Toshiba Electronics Asia (Singapore) Pte. Ltd. Singapore Head Office 438B Alexandra Road, #06-08/12 Alexandra Technopark, Singapore Tel: (278)5252 Fax: (271)5155, (270)6056 Bangkok Office 135 Moo 5 Bangkadi Industrial Park, Tivanon Rd., Bangkadi Amphur Muang Pathumthani 12000, Thailand Tel: (2) Fax: (2) Toshiba Electronics Trading (Malaysia)Sdn. Bhd. Kuala Lumpur Head Office Suite W1203, Wisma Consplant, No.2, Jalan SS 16/4, Subang Jaya, Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: (3) Fax: (3) Penang Office Suite 13-1, 13th Floor, Menard Penang Garden, 42-A, Jalan Sultan Ahmad Shah, Penang, Malaysia Tel: Fax: Toshiba Electronics Asia, Ltd. Hong Kong Head Office Level 11, Top Glory Insurance Building, Grand Century Place, No.193, Prince Edward Road West, Mong Kok, Kowloon, Hong Kong Tel: Fax: Seoul Branch 14/F, KEC B/D, Yangjae-dong, Seocho-ku, Seoul, Korea Tel: (02) Fax: (02) Seoul Branch, Gumi Office 6/F, Ssangyong Investment Securities B/D, 56 Songjung-Dong, Gumi City Kyeongbuk, Korea Tel: (0645) Fax: (0546) Shenzhen Office Rm , Shun Hing Square, Di Wang Commercial Centre, 333 Shennan Road East, Shenzhen, China, Tel: (0755) Fax: (0755) Toshiba Technology Development (Shanghai) Co., Ltd. 23F, Shanghai Senmao International Building, 101 Yin Cheng East Road, Pudong New Area, Shanghai, , China Tel: (21) Fax: (21) Tsurong Xiamen Xiangyu Trading Co., Ltd. 8N, Xiamen Sez Bonded Goods Market Building, Xiamen, Fujian, China Tel: (0592) Fax: (0592) Beijing Office Rm 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, China, Tel: (010) Fax: (010) Toshiba Electronics Taiwan Corporation Taipei Head Office 17F, Union Enterprise Plaza Bldg. 109 Min Sheng East Rd., Section 3, 0446 Taipei, Taiwan R.O.C. Tel: (02) Fax: (02) Kaohsiung Office 16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd., 80027, Kaohsiung, Taiwan R.O.C. Tel: (07) Fax: (07) Toshiba Display Devices (Thailand) Co., Ltd. 142 Moo 5, Bangkadi Industrial Park, Tivanon Rd., Pathumthani 12000, Thailand Tel: (2) Fax: (2) The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. Electronic Devices Sales & Marketing Group 1-1, Shibaura 1-chome, Minato-ku, Tokyo, , Japan Tel: (03) Fax: (03) TOSHIBA CORPORATION Printed in Japan
HD74HC42. BCD-to-Decimal Decoder. ADE (Z) 1st. Edition Sep Description. Features
BCD-to-Decimal Decoder ADE-205-418 (Z) 1st. Edition Sep. 2000 Description Data on the four input pins select one of the 10 outputs corresponding to the value of the BCD number on the inputs. An output
Product Guide Microwave Semiconductors
Product Guide 13 Microwave Semiconductors C O N T E N T S Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs... 3 C-band Internally Matched Power GaAs FETs/GaN HEMTs...
HD74HC4511. BCD-to-Seven Segment Latch/Decoder/Driver. Description. Features
HD74HC4511 BCD-to-Seven Segment Latch/Decoder/Driver Description The HD74HC4511 provides the functions of a 4-bit storage latch, a BCD-to-seven-segment decoder, and an output driver. Lamp test (LT), blanking
HD74AC166/HD74ACT166
HD74AC166/HD74ACT166 8-bit Shift Register Description The HD74AC166/HD74ACT166 is an 8-bit, serial or parallel-in, serial-out shift register using edge triggered D-type flip-flops. Serial and parallel
3SK318. Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier. ADE (Z) 1st. Edition Feb Features. Outline
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-08-600 (Z) st. Edition Feb. 998 Features Low noise characteristics; (NF=. db typ. at f= 900 MHz) Excellent cross modulation characteristics Capable
2SK1169, 2SK1170. Silicon N-Channel MOS FET. Application. Features. Outline. High speed power switching
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at
APPLICATION NOTE. Introduction. Recommended Test Procedures for Operational Amplifiers. 4. Power Supply Rejection Ratio. 1.
APPLICATION NOTE Recommended Test Procedures for AN551 Rev.1.00 Introduction The following text describes the basic test procedures that can be used for most Intersil Op Amps. Note that all measurement
TC4013BP,TC4013BF,TC4013BFN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4013BP,TC4013BF,TC4013BFN TC4013B Dual D-Type Flip Flop TC4013B contains two independent circuits of D type flip-flop. The input level applied
Applications SS 11 VL- R
AC Line Filters SS Coils, SSVL High Frequency Type Overview The KEMET SS Coils, SSVL Type AC line filters are offered in a wide variety of sizes and specifications. Applications Consumer Electronics Common
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm Excellent switching time: ton = 14 ns (typ.) High
Applications SU 9 V- R
AC Line Filters SU Coils, SU 9V/9H Type Overview The KEMET SU Coils, SU 9V/9H Type AC line filters are offered in a wide variety of sizes and specifications. Applications Consumer Electronics Common mode
2SK1254(L), 2SK1254(S)
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching V gate drive device Can be driven from V source Suitable for motor drive, DC-DC converter,
MDS9651 Complementary N-P Channel Trench MOSFET
General Description The MDS961 uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability (D2) 6(D2) 7(D1) 8(D1) MDS961 Complementary
IS2805 DESCRIPTION FEATURES
DESCRIPTION The is an optically coupled isolator consists of two infrared emitting diodes in reverse parallel connection and optically coupled to an NPN silicon photo transistor. This device belongs to
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance : R on = 200 mω (max) (V GS = 4 V) : R on = 250 mω (max) (V
2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC42 Video Output for High Definition VDT High Speed Switching Applications Unit: mm High transition frequency: ft = 4 MHz (typ.) (VCE = V, IC = 7 ma)
2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)
SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:
2SJ174. Silicon P-Channel MOS FET
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable
2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = V Low saturation voltage: VCE (sat) = V (max) High speed: tf =.
2SJ172. Silicon P-Channel MOS FET
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable
TA7262P,TA7262P(LB),TA7262F
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control
HD74LS293P. 4-bit Binary Counter. Features. Pin Arrangement. Function Table. REJ03D Rev.3.00 Jul
4-bit Binary Counter REJ03D0477 0300 Rev.3.00 Jul.15.2005 This counter contai four master-slave flip-flops and additional gating to provide a divide-by-two counter and divideby-eight counter. This counter
IS181 DESCRIPTION FEATURES
DESCRIPTION The IS181 series of optocoupler consists of an infrared light emitting diode optically coupled to an NPN silicon photo transistor in a space efficient Mini Flat Package. FEATURES Low Profile
Quick Reference MP2100A. BERTWave. Procedure for Calculating Extinction Ratio Correction Factor
Quick Reference MP2100A BERTWave Procedure for Calculating Extinction Ratio Correction Factor Contents 1. Introduction... 3 2. Measurement System... 3 3. Procedure... 4 3.1 Calibration... 4 3.2 Measuring
Interval and Wipe/Wash Wiper Control IC with Delay U641B
Features Interval Pause: to 0 s After-wiping Time: to 0 s Wiper Motor's Park Switch 0. s Prewash Delay Wipe/Wash Mode Priority One External Capacitor Determines All Time Sequences Relay Driver with Z-diode
Space Products. Technical Note. Package Thermal Characteristics in a Space Environment. 1. Introduction
Package Thermal Characteristics in a Space Environment 1. Introduction The thermal performance of semiconductor packages is a very important parameter to be taken in consideration when designing an application
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) High Power Amplifier Application Unit: mm High breakdown voltage: V DSS = 8 V Complementary to SJ68.. MAX. 5.9 MAX. Ф. ±... 9..5. ±..
HD74LS155P. Dual 2-line-to-4-line Decoders / Demultiplexers. Features. Pin Arrangement. REJ03D Rev.2.00 Feb
Dual 2-line-to-4-line Decoders / Demultiplexers REJ03D0440 0200 Rev.2.00 Feb.18.2005 This circuit features dual 1-line-to-4-line demultiprexer with individual strobes and common binary-address input. When
RMLV0414E Series. 4Mb Advanced LPSRAM (256-kword 16-bit) Description. Features. Orderable part number information. R10DS0216EJ0200 Rev
4Mb Advanced LPSRAM (256-kword 16-bit) R10DS0216EJ0200 Rev.2.00 Description The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word 16-bit, fabricated by Renesas s high-performance
TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX08F/FN/FT/FK TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK Low-Voltage Quad 2-Input AND Gate with 5-V Tolerant Inputs and Outputs The
RMLV1616A Series. 16Mb Advanced LPSRAM (1M word 16bit / 2M word x 8bit) Description. Features. Part Name Information. R10DS0258EJ0100 Rev.1.
16Mb Advanced LPSRAM (1M word 16bit / 2M word x 8bit) R10DS0258EJ0100 Rev.1.00 Description The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1,048,576-word 16-bit, fabricated by Renesas
PAPER. Reduced Test Time for HCI and Electromigration Tests
WHITE PAPER Reduced Test Time for HCI and Electromigration Tests Many reliability wearout tests monitor a performance parameter that degrades steadily with the log of the time on stress. In most cases,
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU
SSMK7FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMK7FU High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package
TECHNICAL INFORMATION
TECHNICAL INFORMATION THERMAL MANAGEMENT OF SURFACE MOUNTED TANTALUM CAPACITORS Ian Salisbury AVX-Kyocera Group Company Paignton, England TQ4 7ER Abstract: This paper covers thermal management of surface
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200
High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSMJ6TE Small package Low on-resistance : R on = 8 Ω (max) (@V GS = 4 V) : R on =
Manganese(IV) Oxide Curing Agents for Polysulphide Sealants. Inorganic Fine Chemicals FACT SHEET
Inorganic Fine Chemicals FACT SHEET Manganese(IV) Oxide Curing Agents for Polysulphide Sealants LABICOM s.r.o. VTP UP Šlechtitelů 19 783 71 Olomouc www.labicom.cz T +420 585 436 915 F +420 585 436 916
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385 2SK2385 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON resistance
RMLV0416E Series. 4Mb Advanced LPSRAM (256-kword 16-bit) Description. Features. Orderable part number information. R10DS0205EJ0200 Rev
4Mb Advanced LPSRAM (256-kword 16-bit) R10DS0205EJ0200 Rev.2.00 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word 16-bit, fabricated by Renesas s high-performance
TC4066BP,TC4066BF,TC4066BFN,TC4066BFT
TOSHIBA MOS Digital Integrated ircuit Silicon Monolithic T466BP/BF/BFN/BFT T466BP,T466BF,T466BFN,T466BFT T466B Quad Bilateral Switch T466B contains four independent circuits of bidirectional switches.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 0.74 Ω (typ.)
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSMJ7TU High-Speed Switching Applications 4 V drive Low ON-resistance: R on = 225 mω (max) (@V GS = ) R on = 7 mω (max) (@V GS = V) Absolute Maximum
LXA03D530 Qspeed Family
Qspeed Family 530 V, 3 A X-Series Diode Product Summary I F(AVG) 3 A V RRM 530 V Q RR (Typ at 125 C) 75 nc I RRM (Typ at 125 C) 3.2 A Softness t B /t A (Typ at 125 C) 0.34 Pin Assignment D Package (SO-8C)
MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX244F/FW/FT/FK TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK Low-Voltage Octal Bus Buffer with 5-V Tolerant Inputs and Outputs The
TC74VHCT573AF,TC74VHCT573AFW,TC74VHCT573AFT
TOSHIBA CMOS igital Integrated Circuit Silicon Monolithic TC74HCT573AF/AFW/AFT TC74HCT573AF,TC74HCT573AFW,TC74HCT573AFT Octal -Type Latch with 3-State Output The TC74HCT573A is an advanced high speed CMOS
TC4511BP,TC4511BF TC4511BP/BF. TC4511B BCD-to-Seven Segment Latch/Decoder/Driver. Pin Assignment. Display
TC411BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC411BP,TC411BF TC411B BCD-to-Seven Segment Latch/Decoder/Driver TC411B is decoder which converts the input of BCD code into the 7
9321 DM9321 Dual 1-of-4 Decoder
9321 DM9321 Dual 1-of-4 Decoder General Description The 9321 consists of two independent multipurpose decoders each designed to accept two inputs and provide four mutually exclusive outputs In addition
Aerospace part number guide
TRELLEBORG SEALING SOLUTIONS Aerospace part number guide YOUR PARTNER FOR SEALING TECHNOLOGY Your Partner for Sealing Technology Trelleborg Sealing Solutions is a major international sealing force, uniquely
9312 DM9312 One of Eight Line Data Selectors Multiplexers
9312 DM9312 One of Eight Line Data Selectors Multiplexers General Description These data selectors multiplexers contain inverter drivers to supply full complementary on-chip binary decoded data selection
GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking
GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf
TECHNICAL INFORMATION
TECHNICAL INFORMATION THE EFFECTS OF ESR AND ESL IN DIGITAL DECOUPLING APPLICATIONS by Jeffrey Cain, Ph.D. AVX Corporation Abstract: It is common place for digital integrated circuits to operate at switching
TPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source
TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin
DM54LS450 DM74LS Multiplexer
DM54LS450 DM74LS450 16 1 Multiplexer General Description The 16 1 Mux selects one of sixteen inputs E0 through E15 specified by four binary select inputs A B C and D The true data is output on Y and the
LXA16T600C Qspeed Family
Qspeed Family 6 V, 16 A X-Series Common-Cathode Diode Product Summary I F(AVG) per diode 8 A V RRM 6 V Q RR (Typ at 12 C) 82 nc I RRM (Typ at 12 C) 3. A Softness t b /t a (Typ at 12 C). Pin Assignment
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj
SK TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) SK Switching Regulator Applications Unit: mm Low drain source ON resistance : R DS (ON) =. Ω (typ.) High forward transfer admittance
54AC 74AC11 Triple 3-Input AND Gate
54AC 74AC11 Triple 3-Input AND Gate General Description The AC11 contains three 3-input AND gates Logic Symbol IEEE IEC Features Pin Assignment for DIP Flatpak and SOIC Y ICC reduced by 50% Y Outputs source
Interval and Wipe/Wash Wiper Control IC with Delay U641B
Features Interval Pause: s to 0s After-wiping Time: s to 0s Wiper Motor s Park Switch 0.s Prewash Delay Wipe/Wash Mode Priority One External Capacitor Determines All Time Sequences Relay Driver with Z-diode
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) SK Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 7 mω (typ.) High forward
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. (typ.) High forward transfer admittance: Y fs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.7Ω (typ.) High forward transfer admittance:
LED Specification. GW5BTJxxK03 Series LED Module for Lighting Applications. Product Specification January Technical Document.
Technical Document LED Specification EC/Opto Group GW5BTJxxK03 Series LED Module for Lighting Applications Product Specification January 2011 Specification for the 10-watt Mini-Zenigata series, where xx
MM54HC154 MM74HC154 4-to-16 Line Decoder
MM54HC154 MM74HC154 4-to-16 Line Decoder General Description This decoder utilizes advanced silicon-gate CMOS technology and is well suited to memory address decoding or data routing applications It possesses
Replacing ATA5567/T5557/ TK5551 with ATA5577. Application Note. Replacing ATA5567/T5557/TK5551 with ATA5577
Replacing ATA5567/T5557/TK5551 with ATA5577 The ATA5577 is designed to be backwards compatible with the existing versions ATA5567/T5557 and TK5551 (most common modes). It offers the customer an improved
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm V gate drive Low drain-source ON resistance:
54LS20 DM54LS20 DM74LS20 Dual 4-Input NAND Gates
June 1989 54LS20 DM54LS20 DM74LS20 Dual 4-Input NAND Gates General Description This device contains two independent gates each of which performs the logic NAND function Connection Diagram Function Table
CD4070BM CD4070BC Quad 2-Input EXCLUSIVE-OR Gate CD4077BM CD4077BC Quad 2-Input EXCLUSIVE-NOR Gate
CD4070BM CD4070BC Quad 2-Input EXCLUSIVE-OR Gate CD4077BM CD4077BC Quad 2-Input EXCLUSIVE-NOR Gate General Description Employing complementary MOS (CMOS) transistors to achieve wide power supply operating
9334 DM Bit Addressable Latch
9334 DM9334 8-Bit Addressable Latch General Description The DM9334 is a high speed 8-bit Addressable Latch designed for general purpose storage applications in digital systems It is a multifunctional device
54LS00 DM54LS00 DM74LS00 Quad 2-Input NAND Gates
54LS00 DM54LS00 DM74LS00 Quad 2-Input NAND Gates General Description This device contains four independent gates each of which performs the logic NAND function Connection Diagram Features Y Dual-In-Line
54153 DM54153 DM74153 Dual 4-Line to 1-Line Data Selectors Multiplexers
54153 DM54153 DM74153 Dual 4-Line to 1-Line Data Selectors Multiplexers General Description Each of these data selectors multiplexers contains inverters and drivers to supply fully complementary on-chip
CD4028BM CD4028BC BCD-to-Decimal Decoder
CD4028BM CD4028BC BCD-to-Decimal Decoder General Description The CD4028BM CD4028BC is a BCD-to-decimal or binaryto-octal decoder consisting of 4 inputs decoding logic gates and 10 output buffers A BCD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.7Ω (typ.) High forward transfer admittance:
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mω (typ.) High
CD4023M CD4023C Triple 3-Input NAND Gate CD4025M CD4025C Triple 3-Input NOR Gate
CD4023M CD4023C Triple 3-Input NAND Gate CD4025M CD4025C Triple 3-Input NOR Gate General Description These triple gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and
TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF82 TPCF82 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 24 mω (typ.)
HT77XXA PFM Step-up DC/DC Converter
PFM Step-up DC/DC Converter Features Low start-up voltage: 0.7V (Typ.) High efficiency: 85% (Typ.) High output voltage accuracy: 2.5% Output voltage: 2.7V, 3.0V, 3.3V, 5.0V Output current up to 200mA Ultra
Features. Y Low power TTL Fan out of 2 driving 74L. Y 5V 10V 15V parametric ratings. Y Symmetrical output characteristics
CD4071BM CD4071BC Quad 2-Input OR Buffered B Series Gate CD4081BM CD4081BC Quad 2-Input AND Buffered B Series Gate General Description These quad gates are monolithic complementary MOS (CMOS) integrated
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance:
TC74HC148AP,TC74HC148AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC148AP,TC74HC148AF 8-to-3 Line Priority Encoder The TC74HC148A is a high speed CMOS 8-to-3 LINE ENCODER fabricated with silicon gate C2MOS
54LS256 DM74LS256 Dual 4-Bit Addressable Latch
54LS256 DM74LS256 Dual 4-Bit Addressable Latch General Description The LS256 is a dual 4-bit addressable latch with common control inputs these include two Address inputs (A0 A1) an active LOW enable input
Features. Y Low power TTL Fan out of 2 driving 74L. Y 5V 10V 15V parametric ratings. Y Symmetrical output characteristics
CD4001BM CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM CD4011BC Quad 2-Input NAND Buffered B Series Gate General Description These quad gates are monolithic complementary MOS (CMOS) integrated
Spectrophotometric quantification of nucleic acids using the nanovette microliter cell accessory with a DU 730 spectrophotometer
Application Information Spectrophotometric quantification of nucleic acids using the nanovette microliter cell accessory with a DU 730 spectrophotometer Amy Yoder, Mary Blair, Kenny Abell Beckman Coulter,
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H
TPCA-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications.±..7.±..
MM54HC148 MM74HC Line Priority Encoder
MM54HC148 MM74HC148 8-3 Line Priority Encoder General Description This priority encoder utilizes advanced silicon-gate CMOS technology It has the high noise immunity and low power consumption typical of
DM74184 DM74185A BCD-to-Binary and Binary-to-BCD Converters
DM74184 DM74185A BCD-to-Binary and Binary-to-BCD Converters General Description These monolithic converters are derived from the 256-bit read only memories DM5488 and DM7488 Emitter connections are made
54LS85 DM54LS85 DM74LS85 4-Bit Magnitude Comparators
54LS85 DM54LS85 DM74LS85 4-Bit Magnitude Comparators General Description These 4-bit magnitude comparators perform comparison of straight binary or BCD codes Three fully-decoded decisions about two 4-bit
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC84 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767
SK77 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK77 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:
LQA03TC600 Qspeed Family
LQA3TC6 Qspeed Family 6 V, 3 A Q-Series PFC Diode Product Summary I F(AVG) 3 A V RRM 6 V Q RR (Typ at 12 C) 17. nc I RRM (Typ at 12 C) 1.28 A Softness t b /t a (Typ at 12 C) 1. C A Pin Assignment NC A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026
TPC26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC26 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due
MM54C14 MM74C14 Hex Schmitt Trigger
MM54C14 MM74C14 Hex Schmitt Trigger General Description The MM54C14 MM74C14 Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement
54LS352 DM74LS352 Dual 4-Line to 1-Line Data Selectors Multiplexers
54LS352 DM74LS352 Dual 4-Line to 1-Line Data Selectors Multiplexers General Description Each of these data selectors multiplexers contains inverters and drivers to supply fully complementary on-chip binary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T
TKJT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TKJT Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.Ω (typ.) High forward transfer admittance:
TECHNICAL INFORMATION
TECHNICAL INFORMATION RELIABILITY OF MULTILAYER CERAMIC CAPACITORS AFTER THERMAL SHOCK by Bharat S. Rawal Michael Childs Allan Cooper Bill McLaughlin Corporate Research Laboratory AVX Corporation 17th
AN922 Application note
Application note Using a Super Cap to back up the M41T56, M41T00 M41T11, M41T81, M41T94, and M41ST84W (16-pin) Introduction The M41T56, M41T00, M41T11, M41T81, M41T94, and M41ST84W (16-pin) real-time clocks
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =. Ω (typ.) High forward transfer admittance:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA83 TPCA83 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications.±..27 8.4±. Unit: mm. M A Small
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON-resistance: R DS (ON)