GaP 1 - x N x ( x = % 3. 1 %)

Transcription

1 43 4 ( ) Vol 43 No Journal of Xiamen University (Natural Science) J ul 2004 : (2004) GaP 1 - x N x ( x = 0 24 % 3 1 %) , Mascarenhas A (1, ; 2 ; 3 ) : ( PL) GaP 1 - x N x GaP 1 - x N x PL NN, x 0 24 % NN 1, ; ( x 0 81 %), : ; III2V ; : O : A GaPN GaAsN, N GaP 1 - x N x GaPNGaAsN Baillargeon MBE x < 7 6 % GaP GaAs GaN N [2 ],Miyoshi [3 ] MOVPE x N < 4 %, Bi x = 16 % GaPN GaP 1 - x N x [4 ] GaPgN [14 GaAsN ] N ( cm - 3 ) (N ) [2, GaPN GaAsN ] GaPgN GaAsgN ( [ N ] < GaP N [ N ] cm - 3 ) N A cm - 3 GaP ; ( [ N ]10 19 cm - 3 ) [6 N GaP GaN NN ] [ N ], ( cm - 3 ( x = 0 4 %) ) NN 1 ; GaP GaN [7 ] N GaP GaPgN GaPN (MOVPE) (MBE) GaP/ GaN II, GaN, ( ) GaP 560 mev : : ( ) ( GaAsgN N GaPN N (A ) : ( ) [8,9 ] N N GaAs GaP ) [10 ] [ 11,12 ] [ N ] > cm - 3 ( x > 0 4 %), GaPgN GaP 1 - x N x

2 492 ( ) nm GaP 640 ; Zhang [7 ] GaP 1 - x N x 520 x > 0 9 % NN 1, x = 0 05 %,0 12 %,0 24 %,0 43 %,0 6 %,0 81 % NN 3 A x = 3 1 %,NN 1, 250 nm x = 1 3 %,, 2 0 %,2 3 %,3 1 %, 750 nm N PL PL Ar x > 0 43 %NN 1 nm GDM21000, Zhang [7 ], C31034, PAR2124A CSA2202E NN 1, 1730 K N (NNN ), PL GaPN, 1 GaP 1 - x N x x 0 05 % 3 1 % [ N ]1 24 PL x, PL cm ( ( x = 0 05 %,0 12 %), GaP x = 0 24 % 0 6 %) 1 - x N x PL GaPgN ; NN ( x 0 81 %), GaP 1 - x N x GaPgN, GaPgN x, GaP 1 - x N x 1 2 ( x = 0 24 %0 81 %), NN 3 ( x = 0 24 % NN 3 (NREL) (MBE), ),PL (100) GaP GaP 1 - x N x,,nn 1 / 10 4 cm - 1 / 10 4 cm KGaP 1 - x N x ( x = 0 24 % 3 1 %) PL Fig 1 Low temperature PL spectra of GaP 1 - x N x ( x = 0 24 % 3 1 %) at 17 K

3 4 : GaP 1 - x N x ( x = 0 24 % 3 1 %) 493 NN 1 2LOC % [13 ] ; NN 1,NN 1 0 [6,NN 1 ] 43 %0 6 %, Zhang [7 ] NN 1 NN 1 NN 1 1 NN 1 2 NN 1 x = 0 24 %,, NN 1,, x = NN %, NN 1 x = PL 0 6 % x 0 81 ( x = 1 3 %3 1 %) PL,, PL : I 0 I = GaPN 1 + Ae - E A / KT + Be - E B / KT (1) PL x = 0 05 %0 12 % x = 0 24 %,0 43 %,0 6 % NN 1 2LOC GaPgN, x = 0 81 %,2 0 %,3 1 % x = 0 12 % NN 3 NN (, E A, 0 12 % S E B ) 1 x = 0 24 %0, x = 0 24 %,0 43 %,0 6 % 81 %,NN 1 E A = E B 3 NN 1 x = 0 43 %,, S NN 1 PL NN 1 / 10 4 cm GaP 1 - x N x ( x = 0 24 %) Fig 2 The fit to the spectra profiles under different temperatures of GaP 1 - x N x ( x = 0 24 %) T - 1 / K GaP 1 - x N x ( x = 0 43 %) Fig 3 The fit to the activation energy of the lowest new bound state of GaP 1 - x N x ( x = 0 43 %) alloy

4 494 ( ) GaP 1 - x N x Tab 1 Fitted results of activation energies of each GaP 1 - x N x / x A E A / mev B E B / mev 0 24 % % % % % % T - 1 / K - 1 NNN [ 7 ] NNN ev,2 071 ev NNN, NN E A ; N NN 3 4 GaP 1 - x N x ( x = 2 0 %) PL GaP 1 - x N x Fig 4 The fit to the activation energy of the PL NN GaP 1 - x N x ( x = 2 0 %) alloy PL GaPgN NN, ( x = (1) 0 24 %) NN 1, x = 0 24 %, NN %,, LOC,, N x = 0 81 %3 1 %,, NN 1 ( T 130 K),, NNN NN (40 mev),, x = 0 81 %3 1 %, E A E B, E A : [1 ] Bellaiche L, Wei S H, Zunger Alex Band gaps of GaPN mev 1 and GaAsN alloys[j ] Appl Phys Lett,1997,70 (26) :3 (b) PL, ; E B [2 ] BaillargeonJ N,Cheng K Y, Holfler G E,et al Lumines2 ( ) A ( A ν B ) cence quenching and the formation of the GaP 1 - x N x alloy E A in GaP with increasing nitrogen content [J ] Appl Phys

5 4 : GaP 1 - x N x ( x = 0 24 % 3 1 %) 495 Lett,1992,60(20) : [3 ] Miyoshi S, Yaguchi H,Onabe K,et al Metalorganic vapor phase epitaxy of GaP 1 - x N x Phys Lett,1993,63 : alloys on GaP [J ] Appl [4 ] Bi WG, Tu C W N incorporation in GaP and band gap bowing of GaN x P 1 - x [J ] Appl Phys Lett, 1996, 69 (24) : [5 ] Zhang Y,Mascarenhas A,Xin H P,et al Formation of an impurity band and its quantum confinement in heavily doped GaAs gn [J ] Phys Rev,2000,B61 (11) : [6 ] Thomas D G, Hopfield J J Isoelectronic traps due to ni2 trogen in gallium phosphide [J ] Phys Rev, 1966, 150 (2) : [7 ] Zhang Yong, Fluegel B, Mascarenhas A, et al Optical transitions in isoelectronically doped semiconductor GaPgN : an evolution from isolated centers,pairs,clusters to an im2 purity band [J ] Phys Rev, 2000,B62 ( 7) : [8 ] Zhang Yong, Ge W K Behavior of nitrogen impurities in III2V semiconductors[j ] J Lumin,2000,85(4) : [9 ] Bellaiche L,Wei S H,Zunger A Localization and percola2 tion in semiconductor alloys : GaAsN vs GaAsP[J ] Phys Rev,1996,B54 : [10 ] Wu J, Shan W, Walukiewicz W Band anticrossing in highly mismatched III2V semiconductor alloys[j ] Semi2 cond Sci Technol,2002,17 : [11 ] Yaguchi H Theoretical study of conduction band edge formation in GaP 1 - x N x alloys using a tight - binding approximation[j ] J of Crystal Growth,1998,189/ 190 : [12 ] Miyoshi S, Onabe K Band structure of GaP 1 - x N x ( x = 0 25, 0 5, 0 75) ordered alloys : semiempirical tight2binding calculation [J ] Jpn J Appl Phys,1998, 37,part1 (9A) : [13 ] Migliorato P, Margaritondo G, Perfetti P, et al GaPgN photoluminescence at high nitrogen concentrations [J ] Solid State Commun,1974,14(10) : Investigation on t he Emission Recombination Mechanism of GaP 1 - x N x Alloys( x = 0 24 % 3 1 %) LV Yi2jun 1, GAO Yu2lin 1,L IN Shun2yong 1,ZHEN G Jian2sheng 1, ZHAN G Yong 2,MASCAREN HAS A 2,XIN H P 3, TU C W 3 (1 Depart ment of Physics,Xiamen U niversity,xiamen ,China ; 2 National Renewable Energy Laboratory,U SA ; 3 Dept of Elect rical and Computer Engineering,U niv of California,U SA) Abstract : This paper presented an investigation on the emission recombination mechanism of the novel GaP 1 - x N x alloys, using the temperature2dependent photoluminescence ( PL) spectra The GaP 1 - x N x alloys display ob2 vious band2gap reduction characteristic, with the PL spectra developing from nitrogen bound excitons and their p honon replicas under low x composition to impurity band emission under high x composition The result s appar2 ently indicate the appearance of several new bound states below the NN 1 bound exciton even when the composi2 tion x is as low as 0 24 % In low composition alloy, there is only one activation energy, which still remains the characteristic of bound exciton state While in high composition alloy ( x 0 81 %), there exist two kinds of ac2 tivation energies The samples wit h high composition, on one hand, still remain t he bound exciton characteris2 tic, on t he ot her hand, display new recombination mechanism Such new recombination might be related to NNN cluster or have certain interaction with the NN bound excitons Key words : luminescence ; III2V semiconductor ; band2gap bowing