Research Projects. Dr Martin Paul Vaughan. Research Background

Size: px
Start display at page:

Download "Research Projects. Dr Martin Paul Vaughan. Research Background"

Transcription

1 Research Projects Dr Martin Paul Vaughan Research Background Research Background Transport theory Scattering in highly mismatched alloys Density functional calculations First principles approach to alloy scattering 1

2 Proposed projects Proposed projects Develop DFT calculations of carbon in SiGe Investigation of structural stability of graphenelike materials Develop code / theory for true 2D transport Solution of the Boltzmann Transport Equation Development of Monte Carlo code (possible collaboration with University of Bristol) Research Background 2

3 Transport theory Solutions of the Boltzmann Transport Equation Development of the ladder method for polar optical phonon scattering (non-parabolic 3D & 2D) [1-4] Transport theory High field effects Hot electron transport [6] Hot phonon effects in semiconductors [5] 3

4 Highly mismatched alloys Green s function approach to understanding band structure and scattering in dilute nitrides Density of states [2-4, 7-9] Scattering [1-4] Density Functional Theory (DFT) Overview: First Principles method for dealing with intractable many-body problem Observables of the lowest energy state the ground state are obtained via functionals For example: an integralis a functional of the integrand that yields a scalar value In DFT, we deal with functionals of the ground state density. 4

5 Density Functional Theory (DFT) We use the DFT code ABINIT (others available) Examples: band structure of Si and Ge These use the local density approximation(lda) First Principles approach to alloy scattering n-type scattering due to C in Si [10] Currently working on p-type mobility for C in SiGe alloys. n-type mobility Si(1-x)C(x) [10] 5

6 Proposed projects DFT calculations of C in SiGe C in Ge: possible hybridization of conduction and valence bands. Possible localised state forming in valence band. 6

7 DFT calculations of C in SiGe Is hybridisation real? Is a localised state forming? Problems with convergence for C in Ge? Investigations (beyond LDA): Relaxed ground state calculations already performed. Based on these, we can investigate Scissor operator GGA calculations GW calculations DFT calculations of C in SiGe Student training by supervisor: General introduction to DFT Exchange-correlation functions Pseudopotentials Working in a UNIX environment Basic calculations with ABINIT (or other DFT code) Use of supercells Guidance through existing ABINIT input files / post-processing code for C in SiGe 7

8 Investigation of novel graphene-like materials Calculated ground state densities graphene silicene germanene BN AlN GaN Investigation of novel graphene-like materials Investigation of structural stability Buckling of structure Formation energies Tensile properties (Young s modulus, Poisson ratio) Chemical / molecular structures Monatomic / bi-atomic layers etc. Hydrogen on π-bonds etc. Epitaxial substrates etc. 8

9 Investigation of novel graphene-like materials Student training by supervisor: General introduction to DFT Exchange-correlation functions Pseudopotentials Background for graphene-like materials Working in a UNIX environment Basic calculations with ABINIT (or other DFT code) Use of 2D supercells Existing ABINIT input files Transport in true 2D Pseudo-2D structures: e.g. the quantum well Quantised energy levels due to confinement Often approached using Quantum Transport for low carrier densities and Semi-classical Transport for high densities. Step-like density of states 9

10 Transport in true 2D Semi-classical model for phonon scattering developed for 2D [3-4] Still needs to be generalised for a magnetic field Quantum wells and lines etc. are pseudo-2d in that they still have thicknesses of many atomic layers Graphene-like materials may be considered as being true2d no quantized levels due to confinement. Transport in true 2D Development of code for true and pseudo 2D transport Incorporation of magnetic field into semi-classical pseudo 2D model Investigation of quantum / semi-classical crossover Consideration of methodology for semi-classical approach (heavily assisted): Direct solution of Boltzmann s Transport Equation (BTE) Monte Carlo simulation 10

11 Transport in true 2D Student training by supervisor: General introduction to transport theory Programming in C++/Matlab Working from existing C++ code (supervisor s) for direct solution of BTE Possible collaboration with Bristol University working on existing MatLabcode for Monte Carlo simulation (may involve visit to meet author of code) Projects Summary DFT calculations of carbon in SiGe * Investigation of graphene-like materials * True 2D transport Boltzmann Transport Equation (BTE) Monte Carlo (MC) code * Tyndall; Possible collaboration with Uni. Bristol; 11

12 References [1] M.P. Vaughan and B. K. Ridley, Solution of the Boltzmann equation for calculating the Hall mobility in bulk GaNxAs1-x, Phys. Rev. B 72, (2005) [2] M.P. Vaughan and B.K. Ridley, Electron-nitrogen scattering in dilute nitrides, Phys. Rev. B 75, (2007) [3] M.P. Vaughan and B. K. Ridley, The Hall Mobility in Dilute Nitrides, Dilute III-V Nitride Semiconductors and Material Systems, Physics and Technology, Ed. A. Erol, Springer Berlin Heidelberg (2008) [4] M.P Vaughan, Alloy and Phonon Scattering: Development of Theoretical Models for Dilute Nitrides, VDM Verlag Dr. Müller (2009) ISBN: [5] Y. Sun, M.P. Vaughan et al., Inhibition of negative differential resistance in modulation doped n-type Ga(x)In(1-x)N(y)As(1- y)/gaas quantum wells, Phys Rev B 75, (2007) [6] M.P. Vaughan, Hot Electron Transport, Semiconductor Modeling Techniques, Springer Series in Materials Science 159, Springer Berlin Heidelberg (2012) [7] M.P. Vaughan and B. K. Ridley, Effect of non-parabolicity on the density of states for high-field mobility calculations in dilute nitrides, Phys. Stat. Sol. (c) 4, 686 (2007) [8] L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, et al, Direct measurement and analysis of the conduction band density of states in diluted GaAs(1- x)n(x) alloys, Phys Rev B 82, (2010) [9] MP Vaughan, S Fahy, EP O'Reilly, L Ivanova, H Eisele and M Dähne, Modelling and direct measurement of the density of states in GaAsN, Phys. Stat. Sol. (b) 248, 1167 (2011) [10] M.P. Vaughan, F. Murphy-Armando and S. Fahy, First-principles investigation of the alloy scattering potential in dilute Si(1-x)C(x), Phys. Rev. B 85, (2012) 12

Electronic and Optoelectronic Properties of Semiconductor Structures

Electronic and Optoelectronic Properties of Semiconductor Structures Electronic and Optoelectronic Properties of Semiconductor Structures Jasprit Singh University of Michigan, Ann Arbor CAMBRIDGE UNIVERSITY PRESS CONTENTS PREFACE INTRODUCTION xiii xiv 1.1 SURVEY OF ADVANCES

More information

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS В. К. RIDLEY University of Essex CAMBRIDGE UNIVERSITY PRESS Contents Introduction 1 Simple Models of the Electron-Phonon Interaction 1.1 General remarks

More information

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES

PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES Jasprit Singh University of Michigan McGraw-Hill, Inc. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal

More information

QUANTUM WELLS, WIRES AND DOTS

QUANTUM WELLS, WIRES AND DOTS QUANTUM WELLS, WIRES AND DOTS Theoretical and Computational Physics of Semiconductor Nanostructures Second Edition Paul Harrison The University of Leeds, UK /Cf}\WILEY~ ^INTERSCIENCE JOHN WILEY & SONS,

More information

Outline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary

Outline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary Outline Introduction: graphene Adsorption on graphene: - Chemisorption - Physisorption Summary 1 Electronic band structure: Electronic properties K Γ M v F = 10 6 ms -1 = c/300 massless Dirac particles!

More information

Basic Semiconductor Physics

Basic Semiconductor Physics Chihiro Hamaguchi Basic Semiconductor Physics With 177 Figures and 25 Tables Springer 1. Energy Band Structures of Semiconductors 1 1.1 Free-Electron Model 1 1.2 Bloch Theorem 3 1.3 Nearly Free Electron

More information

Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p.

Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p. Metals: the Drude and Sommerfeld models p. 1 Introduction p. 1 What do we know about metals? p. 1 The Drude model p. 2 Assumptions p. 2 The relaxation-time approximation p. 3 The failure of the Drude model

More information

NUMERICAL CALCULATION OF THE ELECTRON MOBILITY IN GaAs SEMICONDUCTOR UNDER WEAK ELECTRIC FIELD APPLICATION

NUMERICAL CALCULATION OF THE ELECTRON MOBILITY IN GaAs SEMICONDUCTOR UNDER WEAK ELECTRIC FIELD APPLICATION International Journal of Science, Environment and Technology, Vol. 1, No 2, 80-87, 2012 NUMERICAL CALCULATION OF THE ELECTRON MOBILITY IN GaAs SEMICONDUCTOR UNDER WEAK ELECTRIC FIELD APPLICATION H. Arabshahi,

More information

Lecture contents. Stress and strain Deformation potential. NNSE 618 Lecture #23

Lecture contents. Stress and strain Deformation potential. NNSE 618 Lecture #23 1 Lecture contents Stress and strain Deformation potential Few concepts from linear elasticity theory : Stress and Strain 6 independent components 2 Stress = force/area ( 3x3 symmetric tensor! ) ij ji

More information

Supporting Information

Supporting Information Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2015 Supporting Information Single Layer Lead Iodide: Computational Exploration of Structural, Electronic

More information

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS

ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS ELECTRONS AND PHONONS IN SEMICONDUCTOR MULTILAYERS Second Edition B.K. RIDLEY University of Essex CAMBRIDGE UNIVERSITY PRESS Contents Preface Introduction 1 Simple Models of the Electron-Phonon Interaction

More information

Minimal Update of Solid State Physics

Minimal Update of Solid State Physics Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary

More information

Physical Properties of Mono-layer of

Physical Properties of Mono-layer of Chapter 3 Physical Properties of Mono-layer of Silicene The fascinating physical properties[ 6] associated with graphene have motivated many researchers to search for new graphene-like two-dimensional

More information

Journal of Atoms and Molecules

Journal of Atoms and Molecules Research article Journal of Atoms and Molecules An International Online Journal ISSN 77 147 Hot Electron Transport in Polar Semiconductor at Low Lattice Temperature A. K. Ghorai Physics Department, Kalimpong

More information

Harald Ibach Hans Lüth SOLID-STATE PHYSICS. An Introduction to Theory and Experiment

Harald Ibach Hans Lüth SOLID-STATE PHYSICS. An Introduction to Theory and Experiment Harald Ibach Hans Lüth SOLID-STATE PHYSICS An Introduction to Theory and Experiment With 230 Figures Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Hong Kong Barcelona Budapest Contents

More information

Second harmonic generation in silicon waveguides strained by silicon nitride

Second harmonic generation in silicon waveguides strained by silicon nitride Second harmonic generation in silicon waveguides strained by silicon nitride M. Cazzanelli, 1 F. Bianco, 1 E. Borga, 1 G. Pucker, 2 M. Ghulinyan, 2 E. Degoli, 3 E. Luppi, 4,7 V. Véniard, 4 S. Ossicini,

More information

Thermoelectrics: A theoretical approach to the search for better materials

Thermoelectrics: A theoretical approach to the search for better materials Thermoelectrics: A theoretical approach to the search for better materials Jorge O. Sofo Department of Physics, Department of Materials Science and Engineering, and Materials Research Institute Penn State

More information

Electronic Properties of Strained Si/Ge Core-Shell Nanowires. Xihong Peng, 1* Paul Logan 2 ABSTRACT

Electronic Properties of Strained Si/Ge Core-Shell Nanowires. Xihong Peng, 1* Paul Logan 2 ABSTRACT Electronic Properties of Strained Si/Ge Core-Shell Nanowires Xihong Peng, * Paul Logan 2 Dept. of Applied Sciences and Mathematics, Arizona State University, Mesa, AZ 8522. 2 Dept. of Physics, Arizona

More information

ALMA: All-scale predictive design of heat management material structures

ALMA: All-scale predictive design of heat management material structures ALMA: All-scale predictive design of heat management material structures Version Date: 2015.11.13. Last updated 2015.12.02 Purpose of this document: Definition of a data organisation that is applicable

More information

Numerical calculation of the electron mobility in ZnS and ZnSe semiconductors using the iterative method

Numerical calculation of the electron mobility in ZnS and ZnSe semiconductors using the iterative method International Journal o the Physical Sciences Vol. 5(11), pp. 1752-1756, 18 September, 21 Available online at http://www.academicjournals.org/ijps ISSN 1992-195 21 Academic Journals Full Length Research

More information

Chapter 1 Electronic and Photonic Materials - DMS. Diluted Magnetic Semiconductor (DMS)

Chapter 1 Electronic and Photonic Materials - DMS. Diluted Magnetic Semiconductor (DMS) Diluted Magnetic Semiconductor (DMS) 1 Properties of electron Useful! Charge Electron Spin? Mass 2 Schematic of a Spinning & Revolving Particle Spinning Revolution 3 Introduction Electronics Industry Uses

More information

Introduction to Condensed Matter Physics

Introduction to Condensed Matter Physics Introduction to Condensed Matter Physics Crystalline Solids - Introduction M.P. Vaughan Overview Overview of course Crystal solids Crystal structure Crystal symmetry The reciprocal lattice Band theory

More information

EFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE

EFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE EFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE C. G. VAN DE WALLE AND J. E. NORTHRUP Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 930, USA E-mail: vandewalle@parc.com

More information

Ga and P Atoms to Covalent Solid GaP

Ga and P Atoms to Covalent Solid GaP Ga and P Atoms to Covalent Solid GaP Band Gaps in Binary Group III-V Semiconductors Mixed Semiconductors Affect of replacing some of the As with P in GaAs Band Gap (ev) (nm) GaAs 1.35 919 (IR) GaP 2.24

More information

1 Review of semiconductor materials and physics

1 Review of semiconductor materials and physics Part One Devices 1 Review of semiconductor materials and physics 1.1 Executive summary Semiconductor devices are fabricated using specific materials that offer the desired physical properties. There are

More information

Solution of the Boltzmann equation for calculating the Hall mobility in bulk GaN x As 1 x

Solution of the Boltzmann equation for calculating the Hall mobility in bulk GaN x As 1 x PHYSICAL REVIEW B 72, 0752 2005 Solution of the Boltzmann equation for calculating the Hall mobility in bulk GaN x As x M. P. Vaughan and B. K. Ridley Department of Electronic Systems Engineering, University

More information

2D MBE Activities in Sheffield. I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield

2D MBE Activities in Sheffield. I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield 2D MBE Activities in Sheffield I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield Outline Motivation Van der Waals crystals The Transition Metal Di-Chalcogenides

More information

Predicting Thermoelectric Properties From First Principles

Predicting Thermoelectric Properties From First Principles Predicting Thermoelectric Properties From First Principles Paul von Allmen, Seungwon Lee, Fabiano Oyafuso Abhijit Shevade, Joey Czikmantory and Hook Hua Jet Propulsion Laboratory Markus Buehler, Haibin

More information

Semiconductors and Optoelectronics. Today Semiconductors Acoustics. Tomorrow Come to CH325 Exercises Tours

Semiconductors and Optoelectronics. Today Semiconductors Acoustics. Tomorrow Come to CH325 Exercises Tours Semiconductors and Optoelectronics Advanced Physics Lab, PHYS 3600 Don Heiman, Northeastern University, 2017 Today Semiconductors Acoustics Tomorrow Come to CH325 Exercises Tours Semiconductors and Optoelectronics

More information

Semiconductor Physics and Devices Chapter 3.

Semiconductor Physics and Devices Chapter 3. Introduction to the Quantum Theory of Solids We applied quantum mechanics and Schrödinger s equation to determine the behavior of electrons in a potential. Important findings Semiconductor Physics and

More information

Introduction to Electrons in Crystals. Version 2.1. Peter Goodhew, University of Liverpool Andrew Green, MATTER

Introduction to Electrons in Crystals. Version 2.1. Peter Goodhew, University of Liverpool Andrew Green, MATTER Introduction to Electrons in Crystals Version 2.1 Peter Goodhew, University of Liverpool Andrew Green, MATTER Assumed Pre-knowledge Atomic structure in terms of protons, neutrons and electrons, the periodic

More information

Electronic structure and properties of a few-layer black phosphorus Mikhail Katsnelson

Electronic structure and properties of a few-layer black phosphorus Mikhail Katsnelson Electronic structure and properties of a few-layer black phosphorus Mikhail Katsnelson Main collaborators: Sasha Rudenko Shengjun Yuan Rafa Roldan Milton Pereira Sergey Brener Motivation Plenty of 2D materials

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Monte Carlo Based Calculation of Electron Transport Properties in Bulk InAs, AlAs and InAlAs

Monte Carlo Based Calculation of Electron Transport Properties in Bulk InAs, AlAs and InAlAs Bulg. J. Phys. 37 (2010) 215 222 Monte Carlo Based Calculation of Electron Transport Properties in Bulk InAs, AlAs and InAlAs H. Arabshahi 1, S. Golafrooz 2 1 Department of Physics, Ferdowsi University

More information

Strained Silicon, Electronic Band Structure and Related Issues.

Strained Silicon, Electronic Band Structure and Related Issues. Strained Silicon, Electronic Band Structure and Related Issues. D. Rideau, F. Gilibert, M. Minondo, C. Tavernier and H. Jaouen STMicroelectronics,, Device Modeling 850 rue Jean Monnet, BP 16, F-38926 Crolles

More information

Free carrier absorption in III nitride semiconductors

Free carrier absorption in III nitride semiconductors Chapter 5 Free carrier absorption in III nitride semiconductors 5.1 Introduction The absorption of electromagnetic radiation, due to its interaction with electrons in semiconductors, is essentially determined

More information

MONTE CARLO SIMULATION OF THE ELECTRON MOBILITY IN STRAINED SILICON

MONTE CARLO SIMULATION OF THE ELECTRON MOBILITY IN STRAINED SILICON MONTE CARLO SIMULATION OF THE ELECTRON MOBILITY IN STRAINED SILICON Siddhartha Dhar*, Enzo Ungersböck*, Mihail Nedjalkov, Vassil Palankovski Advanced Materials and Device Analysis Group, at * *Institute

More information

Optical Properties of Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Optical Properties of Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Optical Properties of Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Light Matter Interaction Response to external electric

More information

1.4 Crystal structure

1.4 Crystal structure 1.4 Crystal structure (a) crystalline vs. (b) amorphous configurations short and long range order only short range order Abbildungen: S. Hunklinger, Festkörperphysik, Oldenbourg Verlag represenatives of

More information

GeSi Quantum Dot Superlattices

GeSi Quantum Dot Superlattices GeSi Quantum Dot Superlattices ECE440 Nanoelectronics Zheng Yang Department of Electrical & Computer Engineering University of Illinois at Chicago Nanostructures & Dimensionality Bulk Quantum Walls Quantum

More information

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor

More information

Solid State Theory: Band Structure Methods

Solid State Theory: Band Structure Methods Solid State Theory: Band Structure Methods Lilia Boeri Wed., 11:00-12:30 HS P3 (PH02112) http://itp.tugraz.at/lv/boeri/ele/ Who am I? Assistant Professor, Institute for Theoretical and Computational Physics,

More information

Ab initio study of Mn doped BN nanosheets Tudor Luca Mitran

Ab initio study of Mn doped BN nanosheets Tudor Luca Mitran Ab initio study of Mn doped BN nanosheets Tudor Luca Mitran MDEO Research Center University of Bucharest, Faculty of Physics, Bucharest-Magurele, Romania Oldenburg 20.04.2012 Table of contents 1. Density

More information

Supplemental material. The conflicting role of buckled structure in phonon. transport of 2D group-iv and group-v materials

Supplemental material. The conflicting role of buckled structure in phonon. transport of 2D group-iv and group-v materials Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2017 Supplemental material The conflicting role of buckled structure in phonon transport of 2D group-iv

More information

Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films. Dmitry Osintsev, Viktor Sverdlov, and Siegfried Selberherr

Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films. Dmitry Osintsev, Viktor Sverdlov, and Siegfried Selberherr 10.1149/05305.0203ecst The Electrochemical Society Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films Dmitry Osintsev, Viktor Sverdlov, and Siegfried Selberherr Institute for

More information

Downloaded on T08:49:20Z. Title. Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces

Downloaded on T08:49:20Z. Title. Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces Title Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces Author(s) Hartnett, Mark C. Publication date 2016 Original citation Type of publication Rights

More information

Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method

Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method CHINESE JOURNAL OF PHYSICS VOL. 48, NO. 3 June 2010 Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method H. R. Alaei, 1 H. Eshghi, 2 R. Riedel, 3 and D.

More information

Introduction to semiconductor nanostructures. Peter Kratzer Modern Concepts in Theoretical Physics: Part II Lecture Notes

Introduction to semiconductor nanostructures. Peter Kratzer Modern Concepts in Theoretical Physics: Part II Lecture Notes Introduction to semiconductor nanostructures Peter Kratzer Modern Concepts in Theoretical Physics: Part II Lecture Notes What is a semiconductor? The Fermi level (chemical potential of the electrons) falls

More information

Recap (so far) Low-Dimensional & Boundary Effects

Recap (so far) Low-Dimensional & Boundary Effects Recap (so far) Ohm s & Fourier s Laws Mobility & Thermal Conductivity Heat Capacity Wiedemann-Franz Relationship Size Effects and Breakdown of Classical Laws 1 Low-Dimensional & Boundary Effects Energy

More information

Scanning Probe Microscopy (SPM)

Scanning Probe Microscopy (SPM) http://ww2.sljus.lu.se/staff/rainer/spm.htm Scanning Probe Microscopy (FYST42 / FAFN30) Scanning Probe Microscopy (SPM) overview & general principles March 23 th, 2018 Jan Knudsen, room K522, jan.knudsen@sljus.lu.se

More information

Prerequisites for reliable modeling with first-principles methods. P. Kratzer Fritz-Haber-Institut der MPG D Berlin-Dahlem, Germany

Prerequisites for reliable modeling with first-principles methods. P. Kratzer Fritz-Haber-Institut der MPG D Berlin-Dahlem, Germany Prerequisites for reliable modeling with first-principles methods P. Kratzer Fritz-Haber-Institut der MPG D-14195 Berlin-Dahlem, Germany Prerequisites for modeling (I) Issues to consider when applying

More information

Non-equilibrium Green s functions: Rough interfaces in THz quantum cascade lasers

Non-equilibrium Green s functions: Rough interfaces in THz quantum cascade lasers Non-equilibrium Green s functions: Rough interfaces in THz quantum cascade lasers Tillmann Kubis, Gerhard Klimeck Department of Electrical and Computer Engineering Purdue University, West Lafayette, Indiana

More information

Spins and spin-orbit coupling in semiconductors, metals, and nanostructures

Spins and spin-orbit coupling in semiconductors, metals, and nanostructures B. Halperin Spin lecture 1 Spins and spin-orbit coupling in semiconductors, metals, and nanostructures Behavior of non-equilibrium spin populations. Spin relaxation and spin transport. How does one produce

More information

Optical Properties of Solid from DFT

Optical Properties of Solid from DFT Optical Properties of Solid from DFT 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India & Center for Materials Science and Nanotechnology, University of Oslo, Norway http://folk.uio.no/ravi/cmt15

More information

32. Electron Transport Within III-V Semiconductors

32. Electron Transport Within III-V Semiconductors 829 32. Electron Transport Within III-V Tran Nitride Semiconductors StephenK.O Leary,PoppySiddiqua,WalidA.Hadi,BrianE.Foutz,MichaelS.Shur,LesterF.Eastman The III-V nitride semiconductors, gallium nitride,

More information

A -SiC MOSFET Monte Carlo Simulator Including

A -SiC MOSFET Monte Carlo Simulator Including VLSI DESIGN 1998, Vol. 8, Nos. (1-4), pp. 257-260 Reprints available directly from the publisher Photocopying permitted by license only (C) 1998 OPA (Overseas Publishers Association) N.V. Published by

More information

Electron energy loss spectroscopy (EELS)

Electron energy loss spectroscopy (EELS) Electron energy loss spectroscopy (EELS) Phil Hasnip Condensed Matter Dynamics Group Department of Physics, University of York, U.K. http://www-users.york.ac.uk/~pjh503 Many slides courtesy of Jonathan

More information

An energy relaxation time model for device simulation

An energy relaxation time model for device simulation Solid-State Electronics 43 (1999) 1791±1795 An energy relaxation time model for device simulation B. Gonzalez a, *, V. Palankovski b, H. Kosina b, A. Hernandez a, S. Selberherr b a University Institute

More information

Chapter 3 Properties of Nanostructures

Chapter 3 Properties of Nanostructures Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,

More information

Novel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer)

Novel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer) Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Supplementary Information for Novel High-Efficiency Crystalline-Si-Based Compound

More information

Physics of Semiconductors

Physics of Semiconductors Physics of Semiconductors 9 th 2016.6.13 Shingo Katsumoto Department of Physics and Institute for Solid State Physics University of Tokyo Site for uploading answer sheet Outline today Answer to the question

More information

Self-compensating incorporation of Mn in Ga 1 x Mn x As

Self-compensating incorporation of Mn in Ga 1 x Mn x As Self-compensating incorporation of Mn in Ga 1 x Mn x As arxiv:cond-mat/0201131v1 [cond-mat.mtrl-sci] 9 Jan 2002 J. Mašek and F. Máca Institute of Physics, Academy of Sciences of the CR CZ-182 21 Praha

More information

Puckering and spin orbit interaction in nano-slabs

Puckering and spin orbit interaction in nano-slabs Electronic structure of monolayers of group V atoms: Puckering and spin orbit interaction in nano-slabs Dat T. Do* and Subhendra D. Mahanti* Department of Physics and Astronomy, Michigan State University,

More information

GaP 1 - x N x ( x = % 3. 1 %)

GaP 1 - x N x ( x = % 3. 1 %) 43 4 ( ) Vol 43 No 4 2004 7 Journal of Xiamen University (Natural Science) J ul 2004 :043820479 (2004) 0420491205 GaP 1 - x N x ( x = 0 24 % 3 1 %) 1 1 1 1 2, Mascarenhas A 2 3 3 (1, 361005 ; 2 ; 3 ) :

More information

Currently, worldwide major semiconductor alloy epitaxial growth is divided into two material groups.

Currently, worldwide major semiconductor alloy epitaxial growth is divided into two material groups. ICQNM 2014 Currently, worldwide major semiconductor alloy epitaxial growth is divided into two material groups. Cubic: Diamond structures: group IV semiconductors (Si, Ge, C), Cubic zinc-blende structures:

More information

Temperature Dependence of the Transport Properties of InN

Temperature Dependence of the Transport Properties of InN Temperature Dependence of the Transport Properties of InN G. Aloise, S. Vitanov, and V. Palankovski ADVANCED MATERIAS AND DEVICE ANAYSIS GROUP INST. FOR MICROEECTRONICS TU Wien, A-1040 Vienna, Austria

More information

Igor A. Abrikosov Department of Physics, Chemistry, and Biology (IFM), Linköping University, Sweden

Igor A. Abrikosov Department of Physics, Chemistry, and Biology (IFM), Linköping University, Sweden Correlation between electronic structure, magnetism and physical properties of Fe-Cr alloys: ab initio modeling Igor A. Abrikosov Department of Physics, Chemistry, and Biology (IFM), Linköping University,

More information

NANO/MICROSCALE HEAT TRANSFER

NANO/MICROSCALE HEAT TRANSFER NANO/MICROSCALE HEAT TRANSFER Zhuomin M. Zhang Georgia Institute of Technology Atlanta, Georgia New York Chicago San Francisco Lisbon London Madrid Mexico City Milan New Delhi San Juan Seoul Singapore

More information

EXTRINSIC SEMICONDUCTOR

EXTRINSIC SEMICONDUCTOR EXTRINSIC SEMICONDUCTOR In an extrinsic semiconducting material, the charge carriers originate from impurity atoms added to the original material is called impurity [or] extrinsic semiconductor. This Semiconductor

More information

Brazilian Journal of Physics, vol. 26, no. 1, March, D Electron Transport in Selectively Doped

Brazilian Journal of Physics, vol. 26, no. 1, March, D Electron Transport in Selectively Doped Brazilian Journal of Physics, vol. 26, no. 1, March, 1996 313 2D Electron Transport in Selectively Doped GaAs/In x Ga 1;xAs Multiple Quantum Well Structures V. A. Kulbachinskii, V. G. Kytin, T. S. Babushkina,

More information

smal band gap Saturday, April 9, 2011

smal band gap Saturday, April 9, 2011 small band gap upper (conduction) band empty small gap valence band filled 2s 2p 2s 2p hybrid (s+p)band 2p no gap 2s (depend on the crystallographic orientation) extrinsic semiconductor semi-metal electron

More information

Review of Semiconductor Physics

Review of Semiconductor Physics Solid-state physics Review of Semiconductor Physics The daunting task of solid state physics Quantum mechanics gives us the fundamental equation The equation is only analytically solvable for a handful

More information

Ferroelectric Field Effect Transistor Based on Modulation Doped CdTe/CdMgTe Quantum Wells

Ferroelectric Field Effect Transistor Based on Modulation Doped CdTe/CdMgTe Quantum Wells Vol. 114 (2008) ACTA PHYSICA POLONICA A No. 5 Proc. XXXVII International School of Semiconducting Compounds, Jaszowiec 2008 Ferroelectric Field Effect Transistor Based on Modulation Doped CdTe/CdMgTe Quantum

More information

Introduction to Condensed Matter Physics

Introduction to Condensed Matter Physics Introduction to Condensed Matter Physics Elasticity M.P. Vaughan Overview Overview of elasticity Classical description of elasticity Speed of sound Strain Stress Young s modulus Shear modulus Poisson ratio

More information

Carbon based Nanoscale Electronics

Carbon based Nanoscale Electronics Carbon based Nanoscale Electronics 09 02 200802 2008 ME class Outline driving force for the carbon nanomaterial electronic properties of fullerene exploration of electronic carbon nanotube gold rush of

More information

Physics and Material Science of Semiconductor Nanostructures

Physics and Material Science of Semiconductor Nanostructures Physics and Material Science of Semiconductor Nanostructures PHYS 570P Prof. Oana Malis Email: omalis@purdue.edu Course website: http://www.physics.purdue.edu/academic_programs/courses/phys570p/ 1 Introduction

More information

Detectors of the Cryogenic Dark Matter Search: Charge Transport and Phonon Emission in Ge 100 Crystals at 40 mk

Detectors of the Cryogenic Dark Matter Search: Charge Transport and Phonon Emission in Ge 100 Crystals at 40 mk J Low Temp Phys (2008) 151: 443 447 DOI 10.1007/s10909-007-9666-5 Detectors of the Cryogenic Dark Matter Search: Charge Transport and Phonon Emission in Ge 100 Crystals at 40 mk K.M. Sundqvist B. Sadoulet

More information

Intervalence-band THz laser in selectively-doped semiconductor structure

Intervalence-band THz laser in selectively-doped semiconductor structure Intervalence-band THz laser in selectively-doped semiconductor structure M. V. Dolguikh, A.V. Muravjov, R. E. Peale Dept. of Physics, University of Central Florida, Orlando FL, 286-285 ABSTRACT Monte Carlo

More information

T wo-dimensional (2D) materials (e.g., graphene, MoS2, silicene) are a focus of intense research because of

T wo-dimensional (2D) materials (e.g., graphene, MoS2, silicene) are a focus of intense research because of OPEN SUBJECT AREAS: TWO-DIMENSIONAL MATERIALS APPLIED PHYSICS Strongly anisotropic in-plane thermal transport in single-layer black phosphorene Ankit Jain & Alan J. H. McGaughey Received 23 October 2014

More information

The effect of light illumination in photoionization of deep traps in GaN MESFETs buffer layer using an ensemble Monte Carlo simulation

The effect of light illumination in photoionization of deep traps in GaN MESFETs buffer layer using an ensemble Monte Carlo simulation International Journal of Physical Sciences Vol. 6(2), pp. 273-279, 18 January, 2011 Available online at http://www.academicjournals.org/ijps ISSN 1992-1950 2011 Academic Journals Full Length Research Paper

More information

Supplementary Materials for

Supplementary Materials for advances.sciencemag.org/cgi/content/full/4/3/e1701373/dc1 Supplementary Materials for Atomically thin gallium layers from solid-melt exfoliation Vidya Kochat, Atanu Samanta, Yuan Zhang, Sanjit Bhowmick,

More information

and strong interlayer quantum confinement

and strong interlayer quantum confinement Supporting Information GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement Yu Jing 1,3, Yandong Ma 1, Yafei Li 2, *, Thomas Heine 1,3 * 1 Wilhelm-Ostwald-Institute

More information

Lecture contents. Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect. NNSE 618 Lecture #15

Lecture contents. Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect. NNSE 618 Lecture #15 1 Lecture contents Burstein shift Excitons Interband transitions in quantum wells Quantum confined Stark effect Absorption edges in semiconductors Offset corresponds to bandgap Abs. coefficient is orders

More information

Chapter 1 Overview of Semiconductor Materials and Physics

Chapter 1 Overview of Semiconductor Materials and Physics Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B

More information

The Basics of Theoretical and Computational Chemistry

The Basics of Theoretical and Computational Chemistry Bernd M. Rode, Thomas S. Hofer, and Michael D. Kugler The Basics of Theoretical and Computational Chemistry BICENTENNIA BICENTBNN I AL. WILEY-VCH Verlag GmbH & Co. KGaA V Contents Preface IX 1 Introduction

More information

Electron Emission from Diamondoids: a DMC Study. Neil D. Drummond Andrew J. Williamson Richard J. Needs and Giulia Galli

Electron Emission from Diamondoids: a DMC Study. Neil D. Drummond Andrew J. Williamson Richard J. Needs and Giulia Galli Electron Emission from Diamondoids: a DMC Study Neil D. Drummond Andrew J. Williamson Richard J. Needs and Giulia Galli October 18, 2005 1 Semiconductor Nanoparticles for Optoelectronic Devices (I) The

More information

Supplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm.

Supplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm. PL (normalized) Intensity (arb. u.) 1 1 8 7L-MoS 1L-MoS 6 4 37 38 39 4 41 4 Raman shift (cm -1 ) Supplementary Figure 1 Raman spectra of the Figure 1B at the 1L-MoS area (black line) and 7L-MoS area (red

More information

Electrical Transport. Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8

Electrical Transport. Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8 Electrical Transport Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8 Electrical Transport The study of the transport of electrons & holes (in semiconductors) under various conditions. A broad & somewhat specialized

More information

Electronic States of InAs/GaAs Quantum Dots by Scanning Tunneling Spectroscopy

Electronic States of InAs/GaAs Quantum Dots by Scanning Tunneling Spectroscopy Electronic States of InAs/GaAs Quantum Dots by Scanning Tunneling Spectroscopy S. Gaan, Guowei He, and R. M. Feenstra Dept. Physics, Carnegie Mellon University, Pittsburgh, PA 15213 J. Walker and E. Towe

More information

Fundamentals of Nanoelectronics: Basic Concepts

Fundamentals of Nanoelectronics: Basic Concepts Fundamentals of Nanoelectronics: Basic Concepts Sławomir Prucnal FWIM Page 1 Introduction Outline Electronics in nanoscale Transport Ohms law Optoelectronic properties of semiconductors Optics in nanoscale

More information

KATIHAL FİZİĞİ MNT-510

KATIHAL FİZİĞİ MNT-510 KATIHAL FİZİĞİ MNT-510 YARIİLETKENLER Kaynaklar: Katıhal Fiziği, Prof. Dr. Mustafa Dikici, Seçkin Yayıncılık Katıhal Fiziği, Şakir Aydoğan, Nobel Yayıncılık, Physics for Computer Science Students: With

More information

Basics of DFT applications to solids and surfaces

Basics of DFT applications to solids and surfaces Basics of DFT applications to solids and surfaces Peter Kratzer Physics Department, University Duisburg-Essen, Duisburg, Germany E-mail: Peter.Kratzer@uni-duisburg-essen.de Periodicity in real space and

More information

Introduction of XPS Absolute binding energies of core states Applications to silicene

Introduction of XPS Absolute binding energies of core states Applications to silicene Core level binding energies in solids from first-principles Introduction of XPS Absolute binding energies of core states Applications to silicene arxiv:1607.05544 arxiv:1610.03131 Taisuke Ozaki and Chi-Cheng

More information

Supporting Information

Supporting Information Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 2016 Supporting Information Metal-Free Half-Metallicity in a High Energy Phase

More information

PHYSICS OF NANOSTRUCTURES

PHYSICS OF NANOSTRUCTURES PHYSICS OF NANOSTRUCTURES Proceedings of the Thirty-Eighth Scottish Universities Summer School in Physics, St Andrews, July-August 1991. A NATO Advanced Study Institute. Edited by J H Davies Glasgow University

More information

SCIENCE CHINA Physics, Mechanics & Astronomy. Electronic structure and optical properties of N-Zn co-doped -Ga 2 O 3

SCIENCE CHINA Physics, Mechanics & Astronomy. Electronic structure and optical properties of N-Zn co-doped -Ga 2 O 3 SCIENCE CHINA Physics, Mechanics & Astronomy Article April 2012 Vol.55 No.4: 654 659 doi: 10.1007/s11433-012-4686-9 Electronic structure and optical properties of N-Zn co-doped -Ga 2 O 3 YAN JinLiang *

More information

The BTE with a High B-field

The BTE with a High B-field ECE 656: Electronic Transport in Semiconductors Fall 2017 The BTE with a High B-field Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA 10/11/17 Outline 1) Introduction

More information

Lecture 17: Semiconductors - continued (Kittel Ch. 8)

Lecture 17: Semiconductors - continued (Kittel Ch. 8) Lecture 17: Semiconductors - continued (Kittel Ch. 8) Fermi nergy Conduction Band All bands have the form - const 2 near the band edge Valence Bands X = (2,,) π/a L = (1,1,1) π/a Physics 46 F 26 Lect 17

More information

Device and Monte Carlo Simulation of GaN material and devices. Presenter: Ziyang Xiao Advisor: Prof. Neil Goldsman University of Maryland

Device and Monte Carlo Simulation of GaN material and devices. Presenter: Ziyang Xiao Advisor: Prof. Neil Goldsman University of Maryland Device and Monte Carlo Simulation of GaN material and devices Presenter: Ziyang Xiao Advisor: Prof. Neil Goldsman University of Maryland 2/23 OUTLINE - GaN Introduction and Background Device Simulation

More information

POLARIZATION INDUCED EFFECTS IN AlGaN/GaN HETEROSTRUCTURES

POLARIZATION INDUCED EFFECTS IN AlGaN/GaN HETEROSTRUCTURES Vol. 98 (2000) ACTA PHYSICA POLONICA A No. 3 Proceedings of the XXIX International School of Semiconducting Compounds, Jaszowiec 2000 POLARIZATION INDUCED EFFECTS IN AlGaN/GaN HETEROSTRUCTURES O. AMBACHER

More information