Ga and P Atoms to Covalent Solid GaP
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1 Ga and P Atoms to Covalent Solid GaP
2 Band Gaps in Binary Group III-V Semiconductors
3 Mixed Semiconductors Affect of replacing some of the As with P in GaAs Band Gap (ev) (nm) GaAs (IR) GaP (green)
4 Band Gaps in Binary Group II-VI Semiconductors
5 Group Variations Affect in going from Group IV, Group III-V to Group II-VI Atomic Radius (pm) Ge (Group IV) 122 Ga (Group III) 122 As (Group V) 121 Zn (Group II) 126 Se (Group VI) 117 All nearly the same size so must consider difference in electronegativity to explain the band gap variation Band Gap (ev) (nm) Ge (IR) GaAs (IR) ZnSe (blue-green)
6 Band Gap in Nitride Binary Semiconductors Material Band Gap (ev) AlN 6.3 GaN 3.4 InN 1.9
7 Band Gap Energies Group IV Band Gaps (ev) C 5.5 Si 1.11 Ge 0.67 Group III-V Band Gaps (ev) III\V N P As Sb Al Ga In Group II-VI Band Gaps (ev) II\VI S Se Te Zn Cd Pb
8 Band-Gap Energy The band-gap energy increases as the splitting between the bonding and antibonding orbitals increases Greater overlap of atomic orbitals Smaller atoms lend to larger band-gaps As the electronegativity difference between the atoms increases. Electrons confined to smaller space
9 Band-Gap Energy Example Which will have the larger band gap and why? Si or Ge GaAs or GaP GaP 0.4 As 0.60 or GaP 0.65 As 0.35 GaAs or ZnS
10 Semiconductors A substance in which some electrons can cross the band gap Electrical conductivity of semiconductors can be modified via doping. Doping - adding trace amounts of an element to a substance to modify its properties. n-type: prepared by doping with a valence electron rich element; negative p-type: prepared by doping with a valence electron deficient element; positive Dopant concentration controls the conductivity
11 Semiconductors n-type semiconductors The extra valence electron fills the donor level, which is just below the conduction band. Little energy is required to promote the donor level electron to the conduction band. p-type semiconductors The lack of valence electrons creates an acceptor level, just above the valence band. Little energy is required to promote a valence band electron to the acceptor level. The vacancies in the valence band are referred to as holes.
12 Semiconductors. (a) A silicon crystal doped with arsenic, which has one more valence electron than silicon. (b) A silicon crystal doped with boron, which has one less electron than silicon
13 n-type Semiconductors Formation of n-type doped silicon. Doping with phosphorus introduces an extra valence electron. The extra electron fills the donor level, which lies close to the conduction band.
14 p-type Semiconductors Formation of a p-type doped silicon. The dopant has fewer than 4 valence electrons. An acceptor level slightly higher than the valence band is created. Aluminum is a common p-type dopant.
15 Semiconductor Example Problem Which kind of material (n- or p-type) would result if pure germanium was doped with: Indium (In) Phosphorus (P) Sulfur (S)
16 Semiconductors A p-n junction can be constructed from p-type and n-type material. The flow of electrons across the junction is easily regulated by applying voltage. Current flows across the junction when the negative pole of a battery is connected to the n-type material. Current does not flow across the junction when the negative pole is connected to the p-type material. Important in solid state electronics.
17 p-n Junction The p-n junction involves the contact of a p-type and an n-type semiconductor. Important building block for electronic circuits Electrical conduction only occurs readily in one direction across the junction No current Current Flows
18 The Range of Resistivity of Materials Varies Widely
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