ECE 474: Principles of Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
|
|
|
- Derick Stewart
- 5 years ago
- Views:
Transcription
1 ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
2 Lecture 14: Chp. 03 Introducing a new way to understand current I N(E) and f
3 Lecture 14: Chp. 03 Introducing a new way to understand current I N(E) and f
4 Lecture 12, slide 7: The PE physical situation of an electron ψ inside a semiconductor (GaAs): e- PE (ev) Energy in ev Chp. 03 <100> <111>
5 Compare this to a road through the Rocky mountains. Analyze what is involved: Barrier Road along valley floor: best Road along upper valley: OK Google: rocky mountains facts pictures
6 Compare this to a road through the Rocky mountains. Analyze what is involved: Some paths through this would require immense energy Road along valley floor: requires least energy Road along upper valley: OK energy requirement after you get into it. Google: rocky mountains facts pictures
7 Compare this to a road through the Rocky mountains. Analyze what is involved: When are you most likely to find cars on these roads, daytime or night time? Google: rocky mountains facts pictures
8 Compare this to a road through the Rocky mountains. Analyze what is involved: Probability of cars occupying these roads is greater during the day time. Daytime sun energy time. Could even relate sun radiant energy to temperature ~ kbt = (1.38 x J/K) Temp Google: rocky mountains facts pictures
9 Compare this to a road through the Rocky mountains. Analyze what is involved: Do these roads exist even when cars are not on them? Google: rocky mountains facts pictures
10 Compare this to a road through the Rocky mountains. Analyze what is involved: Do these roads exist even when cars are not on them? Yes, of course. Google: rocky mountains facts pictures
11 Compare this to a road through the Rocky mountains. Analyze what is involved: If there are any settlements, with cars making local drives, where are they likely to be found? Google: rocky mountains facts pictures
12 Compare this to a road through the Rocky mountains. Analyze what is involved: If there are any settlements, with cars making local drives, where are they likely to be found? In the lower and upper valleys of course. Google: rocky mountains facts pictures
13 Cars electrons in a current I Concentration of carriers: electrons and holes n 0 and p 0 : topenergy n = f ( E, E ) N( E) de Units: 0 F 0 3 bottomenergy cm n # electrons : Concentration of holes p 0 is related. Can also have increased concentrations of electrons n or holes p when you add dopants. Use n and p to get current I drift : I drift = q( n μ n + p μ h )E, E = electric field (V/cm), μ = mobility (cm cm) s V Chp 04: I = I drift + I diffusion
14 Cars electrons in a current I Concentration of electrons n 0 : top energy n = f(e,e )N(E)dE 0 F least energy N: The road f: The probability that the road is occupied E: the energy needed to occupy the road.
15 N(E)dE is the energy density of states. How many different roads (energy levels) there are through a given territory and how much energy it takes to use each one. N 3D (E)dE = # energy levels [ Volume][ available energy : de] f is the Fermi distribution probability function. It is the probability that a given road (energy level) is occupied.:
16 N(E, de) is the energy density of states. How many different roads (energy levels) there are through a given territory and how much energy it takes to use each one. Important: N(E)dE changes form when any momentum(s) are quantized: N 3D (E)dE = N 2D (E)dE = N 1D (E)dE = # energy levels [ Volume][ available energy : de] # energy levels [ Area][ available energy : de] # energy levels [ Line][ available energy : de] This changes the expressions for the current I and the resistance R. V =IR only applies for N 3D (E, de)
17 Lecture 14: Chp. 03 Introducing a new way to understand current I N(E) and f
18 3-Deg N(E,dE) = Energy Density of States (DOS) topenergy n = f ( E, E ) N( E) de 0 bottomenergy F n 0 : # electrons 3 cm N 3D (E)dE 2 = π 2 m * 2 hbar 3/2 E 1/2 de
19
20
21 Probability f(e) = Fermi distribution function topenergy n = f ( E, E ) N( E, de) de Units: # electrons : 0 F 0 3 bottomenergy cm n # between 0 and 100%
22 Pr. 3.2: Probability f(e) E (ev)
23 Probability f(e) Invert the axes E (ev)
24 About the plot: same
25 Probability f(e) = Fermi distribution function
EE 346: Semiconductor Devices
EE 346: Semiconductor Devices Lecture - 6 02/06/2017 Tewodros A. Zewde 1 DENSTY OF STATES FUNCTON Since current is due to the flow of charge, an important step in the process is to determine the number
Semiconductor Physics and Devices Chapter 3.
Introduction to the Quantum Theory of Solids We applied quantum mechanics and Schrödinger s equation to determine the behavior of electrons in a potential. Important findings Semiconductor Physics and
01 01 Intro to Course
ECE 474 Spring 2011 Day Date Lecture Chapter Topics M 10 Jan 01 01 Intro to Course Physical structures of crystal systems that are important for devices W 12 02 01 How to quantify physical structures of
Basic cell design. Si cell
Basic cell design Si cell 1 Concepts needed to describe photovoltaic device 1. energy bands in semiconductors: from bonds to bands 2. free carriers: holes and electrons, doping 3. electron and hole current:
Quantum Phenomena & Nanotechnology (4B5)
Quantum Phenomena & Nanotechnology (4B5) The 2-dimensional electron gas (2DEG), Resonant Tunneling diodes, Hot electron transistors Lecture 11 In this lecture, we are going to look at 2-dimensional electron
Charge Carriers in Semiconductor
Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms
Calculating Band Structure
Calculating Band Structure Nearly free electron Assume plane wave solution for electrons Weak potential V(x) Brillouin zone edge Tight binding method Electrons in local atomic states (bound states) Interatomic
Semiconductor Device Physics
1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle
Solid State Physics SEMICONDUCTORS - IV. Lecture 25. A.H. Harker. Physics and Astronomy UCL
Solid State Physics SEMICONDUCTORS - IV Lecture 25 A.H. Harker Physics and Astronomy UCL 9.9 Carrier diffusion and recombination Suppose we have a p-type semiconductor, i.e. n h >> n e. (1) Create a local
ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE)
ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor
EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices
EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why
ECE 440 Lecture 12 : Diffusion of Carriers Class Outline:
ECE 440 Lecture 12 : Diffusion of Carriers Class Outline: Band Bending Diffusion Processes Diffusion and Drift of Carriers Things you should know when you leave Key Questions How do I calculate kinetic
EE3901 A2001. Semiconductor Devices. Exam 1
Name ECE Box # Problem Score Points 1 10 2 30 3 35 4 25 EE3901 A2001 Semiconductor Devices Exam 1 This is a closed book test! You are allowed one sheet (both sides) of notes. Note: Potentially useful reference
Variation of Energy Bands with Alloy Composition E
Variation of Energy Bands with Alloy Composition E 3.0 E.8.6 L 0.3eV Al x GaAs AlAs 1- xas 1.43eV.16eV X k.4 L. X.0 X 1.8 L 1.6 1.4 0 0. 0.4 0.6 X 0.8 1 1 Carriers in intrinsic Semiconductors Ec 4º 1º
Chemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
Solid State Device Fundamentals
Solid State Device Fundamentals ES 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Oice 4101b 1 The ree electron model o metals The ree electron model o metals
ECE 440 Lecture 28 : P-N Junction II Class Outline:
ECE 440 Lecture 28 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition
Carriers Concentration, Current & Hall Effect in Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Carriers Concentration, Current & Hall Effect in Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Conductivity Charge
Spring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
smal band gap Saturday, April 9, 2011
small band gap upper (conduction) band empty small gap valence band filled 2s 2p 2s 2p hybrid (s+p)band 2p no gap 2s (depend on the crystallographic orientation) extrinsic semiconductor semi-metal electron
ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline:
ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: Depletion Approximation Step Junction Things you should know when you leave Key Questions What is the space charge region? What are the
Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations
Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low
Minimal Update of Solid State Physics
Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary
3. Consider a semiconductor. The concentration of electrons, n, in the conduction band is given by
Colloqium problems to chapter 13 1. What is meant by an intrinsic semiconductor? n = p All the electrons are originating from thermal excitation from the valence band for an intrinsic semiconductor. Then
Spring 2005 MSE111 Midterm. Prof. Eugene Haller. 3/15/05, 9:40 am
Spring 005 MSE111 Midterm Prof. Eugene Haller 3/15/05, 9:40 am University of California at Berkeley Department of Materials Science and Engineering 80 minutes, 68 points total, 10 pages Name: SID: Problem
EECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence
ECE 340 Lecture 21 : P-N Junction II Class Outline:
ECE 340 Lecture 21 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition
Review of Semiconductor Fundamentals
ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,
KATIHAL FİZİĞİ MNT-510
KATIHAL FİZİĞİ MNT-510 YARIİLETKENLER Kaynaklar: Katıhal Fiziği, Prof. Dr. Mustafa Dikici, Seçkin Yayıncılık Katıhal Fiziği, Şakir Aydoğan, Nobel Yayıncılık, Physics for Computer Science Students: With
Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping
Avalanche breakdown Impact ionization causes an avalanche of current Occurs at low doping Zener tunneling Electrons tunnel from valence band to conduction band Occurs at high doping Tunneling wave decays
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
Uniform excitation: applied field and optical generation. Non-uniform doping/excitation: diffusion, continuity
6.012 - Electronic Devices and Circuits Lecture 2 - Uniform Excitation; Non-uniform conditions Announcements Review Carrier concentrations in TE given the doping level What happens above and below room
Qualitative Picture of the Ideal Diode. G.R. Tynan UC San Diego MAE 119 Lecture Notes
Qualitative Picture of the Ideal Diode G.R. Tynan UC San Diego MAE 119 Lecture Notes Band Theory of Solids: From Single Attoms to Solid Crystals Isolated Li atom (conducting metal) Has well-defined, isolated
A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.
Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels
Carrier Statistics and State Distributions
Review 4 on Physical lectronics mportant Slide to watch without doing anything Carrier Statistics and State Distributions (Carriers, Fermi-Dirac Statistics in Solids, Fermi Level, Density of States, etc)
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor
Lecture 7. Drift and Diffusion Currents. Reading: Pierret
Lecture 7 Drift and Diffusion Currents Reading: Pierret 3.1-3.2 Ways Carriers (electrons and holes) can change concentrations Current Flow: Drift: charged article motion in resonse to an electric field.
Semiconductor Device Physics
1 Semiconductor Device Physics Lecture 1 http://zitompul.wordpress.com 2 0 1 3 2 Semiconductor Device Physics Textbook: Semiconductor Device Fundamentals, Robert F. Pierret, International Edition, Addison
Fundamentals of Semiconductor Physics
Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of
ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
Basic Principles of Light Emission in Semiconductors
Basic Principles of Light Emission in Semiconductors Class: Integrated Photonic Devices Time: Fri. 8:00am ~ 11:00am. Classroom: 資電 06 Lecturer: Prof. 李明昌 (Ming-Chang Lee) Model for Light Generation and
ECE 474: Principles of Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu Lecture 06: Completed: Chapter 01: quantify physical structures
Metallic: 2n 1. +n 2. =3q Armchair structure always metallic = 2
Properties of CNT d = 2.46 n 2 2 1 + n1n2 + n2 2π Metallic: 2n 1 +n 2 =3q Armchair structure always metallic a) Graphite Valence(π) and Conduction(π*) states touch at six points(fermi points) Carbon Nanotube:
Intrinsic Semiconductors
Technische Universität Graz Institute of Solid State Physics Intrinsic Semiconductors ermi function f(e) is the probability that a state at energy E is occupied. f( E) 1 E E 1 exp kt B ermi energy The
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the
UNIT I: Electronic Materials.
SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: SEMICONDUCTOR PHYSICS (18HS0851) Course & Branch: B.Tech
EECS143 Microfabrication Technology
EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g
ECE 340 Lecture 39 : MOS Capacitor II
ECE 340 Lecture 39 : MOS Capacitor II Class Outline: Effects of Real Surfaces Threshold Voltage MOS Capacitance-Voltage Analysis Things you should know when you leave Key Questions What are the effects
Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
Spring 2010 MSE 111. Midterm Exam. Prof. Eugene E. Haller. University of California at Berkeley Department of Materials Science and Engineering
Spring 00 MS Midterm xam Prof. ugene. Haller University of California at Berkeley Department of Materials Science and ngineering 3/6/0, 9:40 am 80 minutes, 74 points total, 0 pages ame: SID: Problem 3
Current mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
Numerical Example: Carrier Concentrations
2 Numerical ample: Carrier Concentrations Donor concentration: N d = 10 15 cm -3 Thermal equilibrium electron concentration: n o N d = 10 15 cm 3 Thermal equilibrium hole concentration: 2 2 p o = n i no
Semiconductor Physics. Lecture 3
Semiconductor Physics Lecture 3 Intrinsic carrier density Intrinsic carrier density Law of mass action Valid also if we add an impurity which either donates extra electrons or holes the number of carriers
CLASS 12th. Semiconductors
CLASS 12th Semiconductors 01. Distinction Between Metals, Insulators and Semi-Conductors Metals are good conductors of electricity, insulators do not conduct electricity, while the semiconductors have
Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor?
Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor? 1 Carrier Motion I Described by 2 concepts: Conductivity: σ
1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
ECE 474: Principles of Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University
ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu Lecture 07: Quantify physical structures of crystal systems that
ECE-305: Spring Carrier Action: II. Pierret, Semiconductor Device Fundamentals (SDF) pp
ECE-305: Spring 015 Carrier Action: II Pierret, Semiconductor Device Fundamentals (SDF) pp. 89-104 Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA
8. Schottky contacts / JFETs
Technische Universität Graz Institute of Solid State Physics 8. Schottky contacts / JFETs Nov. 21, 2018 Technische Universität Graz Institute of Solid State Physics metal - semiconductor contacts Photoelectric
Carrier transport: Drift and Diffusion
. Carrier transport: Drift and INEL 5209 - Solid State Devices - Spring 2012 Manuel Toledo April 10, 2012 Manuel Toledo Transport 1/ 32 Outline...1 Drift Drift current Mobility Resistivity Resistance Hall
Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy
Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one
SCHOTTKY BARRIER MOSFET DEVICE PHYSICS FOR CRYOGENIC APPLICATIONS
CHOTTKY BARRIER FET DEVICE PHYIC FOR CRYOGENIC APPLICATION Mike chwarz, Laurie E. Calvet, John P. nyder, Tillmann Krauss, Udo chwalke, Alexander Kloes cope OI and Multi-Gate FETs Dresden ept.3, 2018 New
EE 346: Semiconductor Devices
EE 346: Semiconductor Devices Lecture - 5 02/01/2017 Tewodros A. Zewde 1 The One-Electron Atom The potential function is due to the coulomb attraction between the proton and electron and is given by where
UConn ECE 4211, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 2017
UConn ECE 411, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 017 Device Operation: One of the objectives of this course is to understand operation of carrier transport in semiconductor
Introduction to Engineering Materials ENGR2000. Dr.Coates
Introduction to Engineering Materials ENGR2000 Chapter 18: Electrical Properties Dr.Coates 18.2 Ohm s Law V = IR where R is the resistance of the material, V is the voltage and I is the current. l R A
Schottky diodes. JFETs - MESFETs - MODFETs
Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different
Mat E 272 Lecture 25: Electrical properties of materials
Mat E 272 Lecture 25: Electrical properties of materials December 6, 2001 Introduction: Calcium and copper are both metals; Ca has a valence of +2 (2 electrons per atom) while Cu has a valence of +1 (1
Lecture 2 Electrons and Holes in Semiconductors
EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 2 Electrons and Holes in Semiconductors Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology
ECE-305: Spring 2018 Exam 2 Review
ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,
Chapter 3 Properties of Nanostructures
Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,
Processing of Semiconducting Materials Prof. Pallab Banerji Department of Material Science Indian Institute of Technology, Kharagpur
Processing of Semiconducting Materials Prof. Pallab Banerji Department of Material Science Indian Institute of Technology, Kharagpur Lecture - 4 Doping in Semiconductors Good morning. Let us start with
Semiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
Thermionic emission vs. drift-diffusion vs. p-n junction
6.772/SMA5111 - Compound Semiconductors Lecture 4 - Carrier flow in heterojunctions - Outline A look at current models for m-s junctions (old business) Thermionic emission vs. drift-diffusion vs. p-n junction
Semiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
Appendix 1: List of symbols
Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination
16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:
16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion
Semiconductor Physics
Semiconductor Physics Motivation Is it possible that there might be current flowing in a conductor (or a semiconductor) even when there is no potential difference supplied across its ends? Look at the
Chapter 7. The pn Junction
Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting
Chapter 12: Semiconductors
Chapter 12: Semiconductors Bardeen & Shottky January 30, 2017 Contents 1 Band Structure 4 2 Charge Carrier Density in Intrinsic Semiconductors. 6 3 Doping of Semiconductors 12 4 Carrier Densities in Doped
Carrier Mobility and Hall Effect. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Carrier Mobility and Hall Effect 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 calculation Calculate the hole and electron densities
Misan University College of Engineering Electrical Engineering Department. Exam: Final semester Date: 17/6/2017
Misan University College of Engineering Electrical Engineering Department Subject: Electronic I Class: 1 st stage Exam: Final semester Date: 17/6/2017 Examiner: Dr. Baqer. O. TH. Time: 3 hr. Note: Answer
Laser Diodes. Revised: 3/14/14 14: , Henry Zmuda Set 6a Laser Diodes 1
Laser Diodes Revised: 3/14/14 14:03 2014, Henry Zmuda Set 6a Laser Diodes 1 Semiconductor Lasers The simplest laser of all. 2014, Henry Zmuda Set 6a Laser Diodes 2 Semiconductor Lasers 1. Homojunction
Schottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
THE UNIVERSITY OF NEW SOUTH WALES. SCHOOL OF PHYSICS FINAL EXAMINAnON JUNE/JULY 2008
THE UNIVERSITY OF NEW SOUTH WALES SCHOOL OF PHYSICS FINAL EXAMINAnON JUNE/JULY 2008 PHYS3080 Solid State Physics Time Allowed - 2 hours Total number ofquestions - 5 Answer ALL questions All questions are
Module - 01 Assignment - 02 Intrinsic Semiconductors. In today's assignment class, we will be looking fully at intrinsic semiconductors.
Electronic Materials, Devices and Fabrication Dr. S. Parasuraman Department of Metallurgical and Materials Engineering Indian Institute of Technology, Madras Module - 01 Assignment - 02 Intrinsic Semiconductors
David J. Starling Penn State Hazleton PHYS 214
Being virtually killed by a virtual laser in a virtual space is just as effective as the real thing, because you are as dead as you think you are. -Douglas Adams, Mostly Harmless David J. Starling Penn
EPL213 Problem sheet 1
Fundamentals of Semiconductors EPL213 Problem sheet 1 1 Aim: understanding unit cell, crystal structures, Brillouin zone, symmetry representation 1. Sketch the unit cell in these two examples. Can you
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
Lecture 3 Transport in Semiconductors
EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 3 Transport in Semiconductors Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology Hoboken,
Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)
Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Electronic (Semiconductor) Devices P-N Junctions (Diodes): Physical
Lecture 15: Optoelectronic devices: Introduction
Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1
THE UNIVERSITY OF NEW SOUTH WALES. SCHOOL OF PHYSICS FINAL EXAMI NATIO N june, 2010
THE UNIVERSITY OF NEW SOUTH WALES SCHOOL OF PHYSICS FINAL EXAMI NATIO N june, 2010 PHYS3080 Solid State Physics Time Allowed - 2 hours Total number of questions - 5 Answer ALL questions All questions are
Lecture 3: Electron statistics in a solid
Lecture 3: Electron statistics in a solid Contents Density of states. DOS in a 3D uniform solid.................... 3.2 DOS for a 2D solid........................ 4.3 DOS for a D solid........................
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
PHYS208 p-n junction. January 15, 2010
1 PHYS208 p-n junction January 15, 2010 List of topics (1) Density of states Fermi-Dirac distribution Law of mass action Doped semiconductors Dopinglevel p-n-junctions 1 Intrinsic semiconductors List of
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.
Session 0: Review of Solid State Devices. From Atom to Transistor
Session 0: Review of Solid State Devices From Atom to Transistor 1 Objective To Understand: how Diodes, and Transistors operate! p n p+ n p- n+ n+ p 2 21 Century Alchemy! Ohm s law resistivity Resistivity
Semiconductors. SEM and EDAX images of an integrated circuit. SEM EDAX: Si EDAX: Al. Institut für Werkstoffe der ElektrotechnikIWE
SEM and EDAX images of an integrated circuit SEM EDAX: Si EDAX: Al source: [Cal 99 / 605] M&D-.PPT, slide: 1, 12.02.02 Classification semiconductors electronic semiconductors mixed conductors ionic conductors
V BI. H. Föll: kiel.de/matwis/amat/semi_en/kap_2/backbone/r2_2_4.html. different electrochemical potentials (i.e.
Consider the the band diagram for a homojunction, formed when two bits of the same type of semicondutor (e.g. Si) are doped p and ntype and then brought into contact. Electrons in the two bits have different