01 01 Intro to Course

Size: px
Start display at page:

Download "01 01 Intro to Course"

Transcription

1 ECE 474 Spring 2011 Day Date Lecture Chapter Topics M 10 Jan Intro to Course Physical structures of crystal systems that are important for devices W How to quantify physical structures of crystal systems that are important for devices: Cubic systems: bcc, fcc, diamond, zinc-blende Number of atoms in unit cell Lattice constant a F , Quantify physical structures of crystal systems that are important for devices: Cubic systems: bcc, fcc, diamond, zincblende Packing fraction Nearest neighbor distances Start: lattice-matched compositions for devices M 17 MLK W Lattice-matched compositions for devices F Predicted density Wafer synthesis from melt M Planes (Miller indices) & directions (orientations) W CNT lecture notes F CNT lecture notes Areal Density Introduction to graphene and CNTs The Basis Vectors: a1 and a2 Nearest neighbor distances The Chiral Vector: Ch The CNT diameter dt The Translation Vector: T The Unit Cell of a CNT Number of hexagons N Number of carbon atoms 2N (p electrons) Areal Density M What quantization is Why it matters Several game-changing ideas: Discreet energy levels and the hydrogen atom

2 Are electrons waves????!! Davisson-Germer experiment e- wavelength W 02 SNOW DAY Feb F Consequences of electron having a wavelength A practical example: TEM Hydrogen atom example: where the p_theta = n hbar came from e- wavefunction: electron = ψ M The Uncertainty principle e- wavefunction + Uncertainty Principle Average value only (expectation values) for: Position Momentum p Even existence KE W Potential (quantum) well Motivation Potential energy part the physical situation Potential Energy and width of a well Total energy Conservation of energy: Schroedinger equation The electron in the quantum well The electron in, yes in, the barrier F Discussion of Exam 01 Review of HW03 on board M Introducing a new way to understand current I N(E) and f W Examples: Probability f: fermi distribution function Reference energy EF: Fermi energy and doping Electron and hole concentrations n and p: for current I F Review of HWs 04 and 03 on board. M Doping: it s neutral Space charge neutrality When usual doping approximation is justified When it is not: temperature extremes W When usual doping approximation is not

3 justified temperature extremes When you choose not: co-doping Physical aspects of doping Drift Current F Exam01 in class M Drift Current Hall effect W , 04 Effective mass Photo-generated carriers - I Diffusion current - I F Photo-generated carriers - II M-F SPRING BREAK M Photo-generated carriers III Diffusion current - II W Finish energy barrier and diffusion current - III F Proof: invariance of EF Effective mass - II M Motivation for pn junctions: transistor ON/OFF (the basis for binary logic) achieved by two pn junctions Introduction to pn junction structures : - Energy picture of a pn junction: equilibrium band diagram - Depletion region W, xp0, xn0 - Internal built-in hold-off field E (x) and maximum E0(x) - Energy barrier at a pn junction qv0 - Neutral regions Calculation of pn junction structures : - Energy barrier at a pn junction qv0 Method 01 quick result Method 02 useful relationships W Calculation of pn junction structures : - Internal built-in hold-off field E (x) and maximum E 0(x) - Depletion region W, xp0 and xn0 Effects of forward and reverse biases on

4 structures F I-V behavior of pn junction with battery M , 04 Review of HW 07 W , 04, 05 Review of HWs 05, 06 and 07 F Exam 02 in class M pn junctions: Examples of more complicated I-V analyses Avalanche breakdown Capacitance and its limitation to ON/OFF I-V switching CJ and CS storage delay time Punch-through W Shottky barriers and Ohmic contacts F MOSFETs Intro Vthreshold M Ideal case Vthreshold W Real case Vthreshold C-V curves Low frequency C-V example F C-V C-V curves Low frequency C-V example High frequency C-V example M C-V: VFB clarification for C-V problems I-V Current IDS W Intro to Bipolar Junction Transistors Amplification/transport factors Circuits and load lines Circuits and pn junctions Energy band diagrams F BJT transistors: Circuits and pn junctions: 2 X Chp. 05: Depletion regions and punch through Currents: IB M BJT transistors: Circuits and pn junctions: Currents: IB, IEp, and IC Important current ratios and relationships W BJT transistors:

5 Final details for: Currents: IB, IE, and IC for pnp or npn Important current ratios and relationships ON/OFF for the BJT F 29 Cancelled class due to Design Day W 04 Help session, 3:30-5:00 pm, Rm 2250 R 05 Final Exam, 3:00-5:00 pm, Rm 2250

ECE 474: Principles of Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University

ECE 474: Principles of Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu Lecture 06: Completed: Chapter 01: quantify physical structures

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003

Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 17-1 Lecture 17 - The Bipolar Junction Transistor (I) Contents: Forward Active Regime April 10, 2003 1. BJT: structure and basic operation

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits

EE105 - Fall 2006 Microelectronic Devices and Circuits EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:30-8pm in Sibley Auditorium Covering everything

More information

Recitation 17: BJT-Basic Operation in FAR

Recitation 17: BJT-Basic Operation in FAR Recitation 17: BJT-Basic Operation in FAR BJT stands for Bipolar Junction Transistor 1. Can be thought of as two p-n junctions back to back, you can have pnp or npn. In analogy to MOSFET small current

More information

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed) ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

More information

Solid State Electronics. Final Examination

Solid State Electronics. Final Examination The University of Toledo EECS:4400/5400/7400 Solid State Electronic Section elssf08fs.fm - 1 Solid State Electronics Final Examination Problems Points 1. 1. 14 3. 14 Total 40 Was the exam fair? yes no

More information

Effective masses in semiconductors

Effective masses in semiconductors Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

EE 3329 Electronic Devices Syllabus ( Extended Play )

EE 3329 Electronic Devices Syllabus ( Extended Play ) EE 3329 - Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices

More information

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1 Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode

More information

Concepts & Equations. Applications: Devices

Concepts & Equations. Applications: Devices Concepts & Equations Applications: Devices Concepts & Equations Applications: Devices Current = (charge) x (velocity) Ch1-4 Ch5-6 Concepts & Equations Applications: Devices Concepts & Equations Ch1 Landscape

More information

Session 6: Solid State Physics. Diode

Session 6: Solid State Physics. Diode Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

More information

Lecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.)

Lecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.) 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 35-1 Lecture 35 - Bipolar Junction Transistor (cont.) November 27, 2002 Contents: 1. Current-voltage characteristics of ideal BJT (cont.)

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Week 3, Lectures 6-8, Jan 29 Feb 2, 2001

Week 3, Lectures 6-8, Jan 29 Feb 2, 2001 Week 3, Lectures 6-8, Jan 29 Feb 2, 2001 EECS 105 Microelectronics Devices and Circuits, Spring 2001 Andrew R. Neureuther Topics: M: Charge density, electric field, and potential; W: Capacitance of pn

More information

Nature of Lesson (Lecture/Tutorial) H3 WK No. Day/ Date. Remarks. Duration. 4.00pm 6.30pm ALL. 2.5 hours. Introduction to Semiconductors Lecture 01

Nature of Lesson (Lecture/Tutorial) H3 WK No. Day/ Date. Remarks. Duration. 4.00pm 6.30pm ALL. 2.5 hours. Introduction to Semiconductors Lecture 01 JANUARY 2018 INTAKE Subject : Semiconductor Physics & Devices Venue : HCI Schedule : Mondays for Tutorial (3pm 5pm / 5pm 7pm) or Tuesdays for Tutorial (3pm 5pm / 5pm 7pm) and Thursdays for Lecture (4pm-6.30

More information

FREQUENTLY ASKED QUESTIONS February 21, 2017

FREQUENTLY ASKED QUESTIONS February 21, 2017 FREQUENTLY ASKED QUESTIONS February 21, 2017 Content Questions How do you place a single arsenic atom with the ratio 1 in 100 million? Sounds difficult to get evenly spread throughout. Yes, techniques

More information

Introduction to Transistors. Semiconductors Diodes Transistors

Introduction to Transistors. Semiconductors Diodes Transistors Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms

More information

Appendix 1: List of symbols

Appendix 1: List of symbols Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination

More information

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I V characteristics in forward active regime Reading Assignment:

More information

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics

More information

Fundamentals of Semiconductor Physics

Fundamentals of Semiconductor Physics Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

PN Junctions. Lecture 7

PN Junctions. Lecture 7 Lecture 7 PN Junctions Kathy Aidala Applied Physics, G2 Harvard University 10 October, 2002 Wei 1 Active Circuit Elements Why are they desirable? Much greater flexibility in circuit applications. What

More information

n N D n p = n i p N A

n N D n p = n i p N A Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped

More information

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it. Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

More information

12. Memories / Bipolar transistors

12. Memories / Bipolar transistors Technische Universität Graz Institute of Solid State Physics 12. Memories / Bipolar transistors Jan. 9, 2019 Technische Universität Graz Institute of Solid State Physics Exams January 31 March 8 May 17

More information

Schottky Rectifiers Zheng Yang (ERF 3017,

Schottky Rectifiers Zheng Yang (ERF 3017, ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Electronic (Semiconductor) Devices P-N Junctions (Diodes): Physical

More information

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on Feb. 15, 2018 by 7:00 PM

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on Feb. 15, 2018 by 7:00 PM Department of Electrical and Computer Engineering, Cornell University ECE 3150: Microelectronics Spring 018 Homework 3 Due on Feb. 15, 018 by 7:00 PM Suggested Readings: a) Lecture notes Important Note:

More information

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers

More information

Micro-Syllabus of CSIT Physics

Micro-Syllabus of CSIT Physics Micro-Syllabus of CSIT Physics Garcia Narciso, Damask Arthur, Physics for Computer Science Students, Springer-Verlag Reference Books: (B): Heliday David, Resnick Robert and Walker Gearl, Fundamentals of

More information

LEC E T C U T R U E R E 17 -Photodetectors

LEC E T C U T R U E R E 17 -Photodetectors LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle

More information

Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003

Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 16-1 Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. I-V characteristics (cont.) 2. Small-signal

More information

Lecture 27: Introduction to Bipolar Transistors

Lecture 27: Introduction to Bipolar Transistors NCN www.nanohub.org ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam alam@purdue.edu Alam ECE 606 S09 1 ackground E C E C ase! Point contact Germanium transistor

More information

CMOS Scaling. Two motivations to scale down. Faster transistors, both digital and analog. To pack more functionality per area. Lower the cost!

CMOS Scaling. Two motivations to scale down. Faster transistors, both digital and analog. To pack more functionality per area. Lower the cost! Two motivations to scale down CMOS Scaling Faster transistors, both digital and analog To pack more functionality per area. Lower the cost! (which makes (some) physical sense) Scale all dimensions and

More information

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 19-1 Lecture 19 - p-n Junction (cont.) October 18, 2002 Contents: 1. Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode:

More information

ECE 340 Lecture 27 : Junction Capacitance Class Outline:

ECE 340 Lecture 27 : Junction Capacitance Class Outline: ECE 340 Lecture 27 : Junction Capacitance Class Outline: Breakdown Review Junction Capacitance Things you should know when you leave M.J. Gilbert ECE 340 Lecture 27 10/24/11 Key Questions What types of

More information

SRI VIDYA COLLEGE OF ENGINEERING AND TECHNOLOGY VIRUDHUNAGAR Department of Electronics and Communication Engineering

SRI VIDYA COLLEGE OF ENGINEERING AND TECHNOLOGY VIRUDHUNAGAR Department of Electronics and Communication Engineering SRI VIDYA COLLEGE OF ENGINEERING AND TECHNOLOGY VIRUDHUNAGAR Department of Electronics and Communication Engineering Class/Sem:I ECE/II Question Bank for EC6201-ELECTRONIC DEVICES 1.What do u meant by

More information

Chapter 7. The pn Junction

Chapter 7. The pn Junction Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

EC/EE DIGITAL ELECTRONICS

EC/EE DIGITAL ELECTRONICS EC/EE 214(R-15) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, DECEMBER- 2016 First Semester EC/EE DIGITAL ELECTRONICS Time: Three Hours 1. a) Define Encoder Answer

More information

Physics of Semiconductors 8 th

Physics of Semiconductors 8 th Physics of Semiconductors 8 th 2016.6.6 Shingo Katsumoto Department of Physics, Institute for Solid State Physics University of Tokyo Review of pn junction Estimation of builtin potential Depletion layer

More information

Lecture 18: Semiconductors - continued (Kittel Ch. 8)

Lecture 18: Semiconductors - continued (Kittel Ch. 8) Lecture 18: Semiconductors - continued (Kittel Ch. 8) + a - Donors and acceptors J U,e e J q,e Transport of charge and energy h E J q,e J U,h Physics 460 F 2006 Lect 18 1 Outline More on concentrations

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the

More information

Misan University College of Engineering Electrical Engineering Department. Exam: Final semester Date: 17/6/2017

Misan University College of Engineering Electrical Engineering Department. Exam: Final semester Date: 17/6/2017 Misan University College of Engineering Electrical Engineering Department Subject: Electronic I Class: 1 st stage Exam: Final semester Date: 17/6/2017 Examiner: Dr. Baqer. O. TH. Time: 3 hr. Note: Answer

More information

UConn ECE 4211, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 2017

UConn ECE 4211, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 2017 UConn ECE 411, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 017 Device Operation: One of the objectives of this course is to understand operation of carrier transport in semiconductor

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer

Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice

More information

Electronics EC /2/2012. * In-class exams: 40% 7 th week exam 25% 12 th week exam 15%

Electronics EC /2/2012. * In-class exams: 40% 7 th week exam 25% 12 th week exam 15% Arab Academy for Science, Technology and Maritime Transport Electronics EC 331 Dr. Mohamed Hassan Course Assessment * In-class exams: 40% 7 th week exam 25% 12 th week exam 15% *Tutorial exams and activities:

More information

Lecture 12: MOS Capacitors, transistors. Context

Lecture 12: MOS Capacitors, transistors. Context Lecture 12: MOS Capacitors, transistors Context In the last lecture, we discussed PN diodes, and the depletion layer into semiconductor surfaces. Small signal models In this lecture, we will apply those

More information

1st Year-Computer Communication Engineering-RUC. 4- P-N Junction

1st Year-Computer Communication Engineering-RUC. 4- P-N Junction 4- P-N Junction We begin our study of semiconductor devices with the junction for three reasons. (1) The device finds application in many electronic systems, e.g., in adapters that charge the batteries

More information

ECE 474: Principles of Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University

ECE 474: Principles of Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu Lecture 14: Chp. 03 Introducing a new way to understand current

More information

Institute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:00-11:00 P2

Institute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:00-11:00 P2 Technische Universität Graz nstitute of Solid State Physics Exam Feb 2, 10:00-11:00 P2 Exam Four questions, two from the online list. Calculator is ok. No notes. Explain some concept: (tunnel contact,

More information

L03: pn Junctions, Diodes

L03: pn Junctions, Diodes 8/30/2012 Page 1 of 5 Reference:C:\Users\Bernhard Boser\Documents\Files\Lib\MathCAD\Default\defaults.mcd L03: pn Junctions, Diodes Intrinsic Si Q: What are n, p? Q: Is the Si charged? Q: How could we make

More information

Bipolar junction transistor operation and modeling

Bipolar junction transistor operation and modeling 6.01 - Electronic Devices and Circuits Lecture 8 - Bipolar Junction Transistor Basics - Outline Announcements Handout - Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam - Oct. 8, 7:30-9:30

More information

PHYS485 Materials Physics

PHYS485 Materials Physics 5/11/017 PHYS485 Materials Physics Dr. Gregory W. Clar Manchester University LET S GO ON A (TEK)ADVENTURE! WHAT? TRIP TO A MAKER S SPACE IN FORT WAYNE WHEN? THURSDAY, MAY 11 TH @ 5PM WHERE? TEKVENTURE

More information

PN Junction Diode. Diode Cases. Semiconductor Elements. 2009, EE141Associate Professor PhD. T.Vasileva

PN Junction Diode. Diode Cases. Semiconductor Elements. 2009, EE141Associate Professor PhD. T.Vasileva PN Junction Diode Semiconductor Elements 1 Diode Cases 2 1 Basic Diode Feature The essential feature of a diode is at e magnitude of e current greatly depends on e polarity of applied voltage. Basicaly

More information

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor

More information

The Devices. Jan M. Rabaey

The Devices. Jan M. Rabaey The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models

More information

CMOS Devices. PN junctions and diodes NMOS and PMOS transistors Resistors Capacitors Inductors Bipolar transistors

CMOS Devices. PN junctions and diodes NMOS and PMOS transistors Resistors Capacitors Inductors Bipolar transistors CMOS Devices PN junctions and diodes NMOS and PMOS transistors Resistors Capacitors Inductors Bipolar transistors PN Junctions Diffusion causes depletion region D.R. is insulator and establishes barrier

More information

Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is

Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is CHAPTER 7 The PN Junction Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is uniformly doped with donor atoms.

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids

More information

Device Physics: The Bipolar Transistor

Device Physics: The Bipolar Transistor Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches

More information

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of

More information

p-n junction biasing, p-n I-V characteristics, p-n currents Norlaili Mohd. Noh EEE /09

p-n junction biasing, p-n I-V characteristics, p-n currents Norlaili Mohd. Noh EEE /09 CLASS 6&7 p-n junction biasing, p-n I-V characteristics, p-n currents 1 p-n junction biasing Unbiased p-n junction: the potential barrier is 0.7 V for Si and 0.3 V for Ge. Nett current across the p-n junction

More information

A SEMICONDUCTOR DIODE. P-N Junction

A SEMICONDUCTOR DIODE. P-N Junction A SEMICONDUCTOR DIODE P-N Junction Analog Electronics Pujianto Department of Physics Edu. State University of Yogyakarta A Semiconductor Devices A Semiconductor devices can be defined as a unit which consists,

More information

CARLETON UNIVERSITY. FINAL EXAMINATION December 2016

CARLETON UNIVERSITY. FINAL EXAMINATION December 2016 CARLETON UNIVERSITY FINAL EXAMINATION December 2016 DURATION: 3 HOURS Department Name & Course Number: Electronics 4705 Course Instructor(s): Tom Smy AUTHORIZED MEMORANDA CALCULATOR (Not Programmable)

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless

More information

Introduction to Power Semiconductor Devices

Introduction to Power Semiconductor Devices ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings

More information

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013 Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance

More information

junctions produce nonlinear current voltage characteristics which can be exploited

junctions produce nonlinear current voltage characteristics which can be exploited Chapter 6 P-N DODES Junctions between n-and p-type semiconductors are extremely important foravariety of devices. Diodes based on p-n junctions produce nonlinear current voltage characteristics which can

More information

( )! N D ( x) ) and equilibrium

( )! N D ( x) ) and equilibrium ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,

More information

ELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models

ELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models LC 3908, Physical lectronics, Lecture 17 Bipolar Transistor njection Models Lecture Outline Last lecture looked at qualitative operation of the BJT, now want to develop a quantitative model to predict

More information

Memories Bipolar Transistors

Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Exams February 5 March 7 April 18 June 27 Exam Four

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor

More information

SEMICONDUCTOR AND DEVICE PHYSICS: A CONCISE INTRODUCTION. Neil Goldsman, Ph.D

SEMICONDUCTOR AND DEVICE PHYSICS: A CONCISE INTRODUCTION. Neil Goldsman, Ph.D SEMICONDUCTOR AND DEVICE PHYSICS: A CONCISE INTRODUCTION Neil Goldsman, Ph.D April 30, 2018 c Neil Goldsman ii Preface This text is meant for students starting to learn about semiconductor devices and

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3

More information

3. Two-dimensional systems

3. Two-dimensional systems 3. Two-dimensional systems Image from IBM-Almaden 1 Introduction Type I: natural layered structures, e.g., graphite (with C nanostructures) Type II: artificial structures, heterojunctions Great technological

More information

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices.

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices. Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The July 30, 2002 1 Goal of this chapter Present intuitive understanding of device operation Introduction

More information

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor: 16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at

More information

EE130: Integrated Circuit Devices

EE130: Integrated Circuit Devices EE130: Integrated Circuit Devices (online at http://webcast.berkeley.edu) Instructor: Prof. Tsu-Jae King (tking@eecs.berkeley.edu) TA s: Marie Eyoum (meyoum@eecs.berkeley.edu) Alvaro Padilla (apadilla@eecs.berkeley.edu)

More information

Lecture 0. EE206 Electronics I

Lecture 0. EE206 Electronics I Lecture 0 Course Overview EE206 Electronics I Course description: Theory, characteristics and operation of diodes, bipolar junction transistors and MOSFET transistors. When: Tue Thu 10:30-12:20 (Lectures)

More information

Lecture 16 The pn Junction Diode (III)

Lecture 16 The pn Junction Diode (III) Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions

EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 pn Junction p-type semiconductor in

More information

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why

More information

Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,

Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction, Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier

More information

Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors.

Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors. - 1-1/15/02C:\lec320.doc H.L.Kwok SEMICONDUCTOR MATERIALS AND DEVICES by H.L. Kwok Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction,

More information

ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017

ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017 NAME: PUID: ECE 305 Fall 017 Final Exam (Exam 5) Wednesday, December 13, 017 This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the ECE policy,

More information

ELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating

ELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and Self-Heating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor

More information

The pn junction. [Fonstad, Ghione]

The pn junction. [Fonstad, Ghione] The pn junction [Fonstad, Ghione] Band diagram On the vertical axis: potential energy of the electrons On the horizontal axis: now there is nothing: later we ll put the position qf s : work function (F

More information

ECE335F: Electronic Devices Syllabus. Lecture*

ECE335F: Electronic Devices Syllabus. Lecture* Lecture 1 - Introduction: Course Overview 1 - Introduction: Course Overview 2 1 Crystal Structure of Solids 2 1 Crystal Structure of Solids 1.1 Semiconductor materials 1.1 Semiconductor materials 1.2 Types

More information

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline:

ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: Depletion Approximation Step Junction Things you should know when you leave Key Questions What is the space charge region? What are the

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information