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1 ECE 474 Spring 2011 Day Date Lecture Chapter Topics M 10 Jan Intro to Course Physical structures of crystal systems that are important for devices W How to quantify physical structures of crystal systems that are important for devices: Cubic systems: bcc, fcc, diamond, zinc-blende Number of atoms in unit cell Lattice constant a F , Quantify physical structures of crystal systems that are important for devices: Cubic systems: bcc, fcc, diamond, zincblende Packing fraction Nearest neighbor distances Start: lattice-matched compositions for devices M 17 MLK W Lattice-matched compositions for devices F Predicted density Wafer synthesis from melt M Planes (Miller indices) & directions (orientations) W CNT lecture notes F CNT lecture notes Areal Density Introduction to graphene and CNTs The Basis Vectors: a1 and a2 Nearest neighbor distances The Chiral Vector: Ch The CNT diameter dt The Translation Vector: T The Unit Cell of a CNT Number of hexagons N Number of carbon atoms 2N (p electrons) Areal Density M What quantization is Why it matters Several game-changing ideas: Discreet energy levels and the hydrogen atom
2 Are electrons waves????!! Davisson-Germer experiment e- wavelength W 02 SNOW DAY Feb F Consequences of electron having a wavelength A practical example: TEM Hydrogen atom example: where the p_theta = n hbar came from e- wavefunction: electron = ψ M The Uncertainty principle e- wavefunction + Uncertainty Principle Average value only (expectation values) for: Position Momentum p Even existence KE W Potential (quantum) well Motivation Potential energy part the physical situation Potential Energy and width of a well Total energy Conservation of energy: Schroedinger equation The electron in the quantum well The electron in, yes in, the barrier F Discussion of Exam 01 Review of HW03 on board M Introducing a new way to understand current I N(E) and f W Examples: Probability f: fermi distribution function Reference energy EF: Fermi energy and doping Electron and hole concentrations n and p: for current I F Review of HWs 04 and 03 on board. M Doping: it s neutral Space charge neutrality When usual doping approximation is justified When it is not: temperature extremes W When usual doping approximation is not
3 justified temperature extremes When you choose not: co-doping Physical aspects of doping Drift Current F Exam01 in class M Drift Current Hall effect W , 04 Effective mass Photo-generated carriers - I Diffusion current - I F Photo-generated carriers - II M-F SPRING BREAK M Photo-generated carriers III Diffusion current - II W Finish energy barrier and diffusion current - III F Proof: invariance of EF Effective mass - II M Motivation for pn junctions: transistor ON/OFF (the basis for binary logic) achieved by two pn junctions Introduction to pn junction structures : - Energy picture of a pn junction: equilibrium band diagram - Depletion region W, xp0, xn0 - Internal built-in hold-off field E (x) and maximum E0(x) - Energy barrier at a pn junction qv0 - Neutral regions Calculation of pn junction structures : - Energy barrier at a pn junction qv0 Method 01 quick result Method 02 useful relationships W Calculation of pn junction structures : - Internal built-in hold-off field E (x) and maximum E 0(x) - Depletion region W, xp0 and xn0 Effects of forward and reverse biases on
4 structures F I-V behavior of pn junction with battery M , 04 Review of HW 07 W , 04, 05 Review of HWs 05, 06 and 07 F Exam 02 in class M pn junctions: Examples of more complicated I-V analyses Avalanche breakdown Capacitance and its limitation to ON/OFF I-V switching CJ and CS storage delay time Punch-through W Shottky barriers and Ohmic contacts F MOSFETs Intro Vthreshold M Ideal case Vthreshold W Real case Vthreshold C-V curves Low frequency C-V example F C-V C-V curves Low frequency C-V example High frequency C-V example M C-V: VFB clarification for C-V problems I-V Current IDS W Intro to Bipolar Junction Transistors Amplification/transport factors Circuits and load lines Circuits and pn junctions Energy band diagrams F BJT transistors: Circuits and pn junctions: 2 X Chp. 05: Depletion regions and punch through Currents: IB M BJT transistors: Circuits and pn junctions: Currents: IB, IEp, and IC Important current ratios and relationships W BJT transistors:
5 Final details for: Currents: IB, IE, and IC for pnp or npn Important current ratios and relationships ON/OFF for the BJT F 29 Cancelled class due to Design Day W 04 Help session, 3:30-5:00 pm, Rm 2250 R 05 Final Exam, 3:00-5:00 pm, Rm 2250
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