List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

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1 SMD NPN Transistr Frmsa MS List List... Package utline Features... 2 Mechanical data... Maximum ratings... Rating and characteristic curves ~3 4~6 Pinning infrmatin... 7 Marking... Suggested slder pad layut Packing infrmatin... 8 Reel packing... 9 Suggested thermal prfiles fr sldering prcesses... 9 High reliability test capabilities... Page 1 Dcument ID Issued Date Revised Date Revisin Page.

2 SMD NPN Transistr Frmsa MS 600mA Silicn NPN pitaxial Planar Transistr Features High cllectr-emitterbreakdien vltage. (B O = 40@I =ma) Small lad switch transistr with high gain and lw stauratin vltage, is designed fr general purpse amflifier and switching applicatins at cllectr current. apable f 150mW pwer dissipatin. Lead-free parts fr green partner, exceeds envirnmental standards f MIL-STD /228 Suffix "-H" indicates Halgen-free part, ex.-h. Package utline (2.20) (1.80).056(1.40).048(1.20) (0.65)Max SOT-323 (B) (A) () (0.40) (0.30) Mechanical data pxy:ul94-0 rated flame retardant ase : Mlded plastic, SOT-323 Terminals : Slder plated, slderable per MIL-STD-750, Methd 2026 Munting Psitin : Any Weight : Apprximated gram (1.35) (1.15) (2.40) (2.00) (1.00) (0.80) (0.53) (0.42) 0.0 (0.25) (0) Dimensins in inches and (millimeters) Maximum ratings (AT T A=25 unless therwise nted) PARAMTR llectr-base vltage llectr-mitter vltage mitter-base vltage llectr urrent ntinuus Ttal device dissipatin FR-5 bard (1) Thermal resistance(1) Ttal device dissipatin alumina substrate(2) Thermal resistance(2) Operating junctin temperature range Strage temperature range O T A = 25 Derate abve 25 O ONDITIONS Symbl Junctin t ambient R θja 417 O/W T J -55 t +150 T STG -55 t +150 BO O BO I P D UNIT ma mw mw/ O Junctin t ambient R θja 833 O/W O T A = 25 Derate abve 25 O 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X in. 99.5% alumina. P D alue mw mw/ O Page 2 Dcument ID Issued Date Revised Date Revisin Page.

3 SMD NPN Transistr Frmsa MS lectrical characteristics (AT T A=25 unless therwise nted) Off characteristics PARAMTR ONDITIONS Symbl Min. Max. UNIT llectr-base breakdwn vltage I c = ua, I = 0 (BR)BO 75 llectr-mitter breakdwn vltage(3) I c = ma, I B = 0 (BR) O 40 mitter-base breakdwn vltage I c = ua, I = 0 (BR) BO 6.0 llectr cutff current = 60dc, B(ff) = 3.0dc I X na Base cutff current = 60dc, B(ff) = 3.0dc I BL 20 na On characteristics(3) PARAMTR ONDITIONS Symbl Min. Max. UNIT I = ma, c = 35 I = 1.0mA, c = 50 Dcurrent gain I = ma, c = h F 75 - I c = 150mA, = (3) 0 I c = 500mA, = (3) 40 llectr-mitter saturatin vltage(3) I c = 150mA, I B = 15mA I c = 500mA, I B = 50mA (sat) dc Base-mitter saturatin vltage(3) I c = 150mA, I B = 15mA I c = 500mA, I B = 50mA B(sat) dc 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. Small-signal characteristics PARAMTR ONDITIONS Symbl Min. Max. UNIT urrent-gain-bandwidth prduct(4) I = 20mA, = 20, f = 0MHz f T 300 MHz Output capacitance B =, I = 0, f = 1.0MHz b 8.0 pf Input capacitance B = 0.5, I = 0, f = 1.0MHz ib 30 pf Input impedance =, I = ma, f = 1.0KHz h ie khms ltage feeback radi =, I = ma, f = 1.0KHz h re 4.0 X -4 Small-signal current gain =, I = ma, f = 1.0KHz h fe Output admittance =, I = ma, f = 1.0KHz Nise figure =, I = 0uA, RS = 1.0K hms, f = 1.0KHZ 4.fT is defined as the frequency at which hfe extraplates t unity. db NF h e umhs Switching characteristics PARAMTR ONDITIONS Symbl Min. Max. UNIT Delay time Rise time Strage time Fall time = 30, B(ff) = -0.5, I = 150mA, I B1 = 15mA = 30, I =150mA, I B1 = I B2 = 15mA td tr ts tf 60 ns Page 3 Dcument ID Issued Date Revised Date Revisin Page.

4 SMD NPN Transistr Frmsa MS Switching time equivalent test circuits Page 4 Dcument ID Issued Date Revised Date Revisin Page.

5 Rating and characteristic curves () h F -TYPIAL PULSD URRNT GAIN Typical Pulsed urrent Gain vs llectr urrent = I c - OLLTOR URRNT ( ma) SAT OLLTOR-MITTR OLTAG () llectr - mitter Saturatin ltage vs llectr urrent b= Ic- OLLTOR URRNT ( ma) BSAT BAS-MITTR OLTAG () Base -mitter Saturatin ltage vs llectr urrent b= Ic- OLLTOR URRNT ( ma) ( ) BAS-MITTR ON OLTAG () B ON = 5 Base -mitter ON ltage vs llectr urrent Ic- OLLTOR URRNT ( ma) I BO OLLTOR URRNT (na) B =40 0llectr -utff urrent vs Ambient Temperature TA- AMBINT TMPRATUR ( ) APAITAN ( pf ) mitter Transitin and Output apacitance vs Reverse Bias ltage b te f= 1MHz RRS BIAS OLTAG ( ) Page 5 Dcument ID Issued Date Revised Date Revisin Page.

6 Rating and characteristic curves () TIM ( ns ) I B1 =IB2= Turn On and Turn Off Times vs llectr urrent cc =25 1 c t OFF TIM ( ns ) I B1 =I B2= 1 c cc= 25 t f t r Switching Times vs llectr urrent t s t ON Ic- OLLTOR URRNT ( ma) t d Ic- OLLTOR URRNT ( ma) Page 6 Dcument ID Issued Date Revised Date Revisin Page.

7 SMD NPN Transistr Frmsa MS Pinning infrmatin PinB Pin Pin Pin Simplified utline Symbl Base llectr mitter B B Marking Type number Marking cde P1 Suggested slder pad layut SOT (0.65) 0.025(0.65) 0.075(1.9) 0.035(0.90) 0.028(0.70) Dimensins in inches and (millimeters) Page 7 Dcument ID Issued Date Revised Date Revisin Page.

8 SMD NPN Transistr Frmsa MS Packing infrmatin P0 d P1 F B W A P T D2 D1 D W1 unit:mm Item Symbl Tlerance SOT-323 arrier width arrier length arrier depth Sprcket hle 13" Reel utside diameter 13" Reel inner diameter 7" Reel utside diameter 7" Reel inner diameter Feed hle diameter Sprcket hle psitin Punch hle psitin Punch hle pitch Sprcket hle pitch mbssment center Overall tape thickness Tape width Reel width A B d D D1 D D1 D2 F P P0 P1 2.0 min 2.0 min T W 0.3 W1 1.0 Nte:Devices are packed in accr dance with IA standar RS-481-A and specificatins listed abve. Page 8 Dcument ID Issued Date Revised Date Revisin Page.

9 SMD NPN Transistr Frmsa MS Reel packing PAKAG RL SIZ RL (pcs) OMPONNT SPAING (m/m) BOX (pcs) INNR BOX (m/m) RL DIA, (m/m) ARTON SIZ (m/m) ARTON (pcs) APPROX. GROSS WIGHT (kg) SOT-323 7" 3, , *183* *262* , Suggested thermal prfiles fr sldering prcesses 1.Strage envirnment: Temperature=5 ~40 Humidity=55% ± 25% 2.Reflw sldering f surface-munt devices TP Tp ritical Zne TL t TP Ramp-up TL Tsmax TL Tsmin Temperature ts Preheat Ramp-dwn 25 t25 t Peak 3.Reflw sldering Time Prfile Feature Sldering nditin Average ramp-up rate(tl t T P) <3 /sec Preheat -Temperature Min(Tsmin) 150 -Temperature Max(Tsmax) 200 -Time(min t max)(t s) 60~120sec Tsmax t TL -Ramp-upRate <3 /sec Time maintained abve: -Temperature(T L) 217 -Time(t L) 60~260sec Peak Temperature(T P) 255-0/ + 5 Time within 5 f actual Peak Temperature(t P) ~30sec Ramp-dwn Rate <6 /sec Time 25 t Peak Temperature <6minutes Page 9 Dcument ID Issued Date Revised Date Revisin Page.

10 SMD NPN Transistr Frmsa MS High reliability test capabilities Item Test 1. Steady State Operating Life nditins P =150mW Test Duratin:00hrs D 2. High Temperature Reverse Bias Tj= 150, = 80% related vlage, 00hrs 3. Temperature ycle - 55 ( 15min) t 150 ( 15min) Air t Air Transitin Time< 20sec Test ycles: 00cycle 4. Autclave P= 2atm Ta= 121 RH= 0% Test Duratin: 96hrs 5. High Temperature Strage Life Ta= 150 Test Duratin: 00hrs 6. Slderability 245, 5sec 7. High Temperature High Humidity Reverse Bias Ta= 85, 85% RH, = 80% related vlage, 00hrs 8. Resistance t Sldering Heat, 260 sec Page Dcument ID Issued Date Revised Date Revisin Page.

List... Package outline... Features Mechanical data... Maximum ratings... Switching time equivalent test circuits...

List... Package outline... Features Mechanical data... Maximum ratings... Switching time equivalent test circuits... SMD NPN Transistr Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Switching time equivalent test circuits... Rating and characteristic curves... 2 2~3 4