Random Telegraph Signal in Carbon Nanotube Device

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1 Random Telegraph Signal in Carbon Nanotube Device Tsz Wah Chan Feb 28,

2 Introduction 1. Structure of Single-walled Carbon Nanotube (SWCNT) 2. Electronic properties of SWCNT 3. Sample preparation: Catalytic synthesis of SWCNT, Fabrication. 4. Electronic transport: carbon nanotube field effect transistor (CNT-FET), ideal IV curves. 5. RTS basics, Other groups data, our data 6. Future work 7. Group and Collaboration 2

3 Motivation: 1. Interaction between single molecular defects and 1D conduction channel in nano scale 2. Potential sensing technology in nano scale F. Liu, K. L. Wang, C. Li, and C. Zhou, IEEE Transaction on Nanotechnology, 5, 411 (2006) 3

4 1. Structure of Single-walled carbon nanotube (SWCNT). Graphene sheet rolled up into a hollow cylinder Graphene is rolled along Chiral vector into cylinder Chiral Vector C = n a 1 + ma 2 Chirality indices (n, m) uniquely define a tube Dresselhaus et al., Physics World

5 1. Structure of Single-walled carbon nanotube (SWCNT). Graphene sheet rolled up into a hollow cylinder Graphene is rolled along Chiral vector into cylinder Chiral Vector C = n a 1 + ma 2 Chirality indices (n, m) uniquely define a tube Dresselhaus et al., Physics World

6 1. Structure of Single-walled carbon nanotube (SWCNT). Graphene sheet rolled up into a hollow cylinder Graphene is rolled along Chiral vector into cylinder Chiral Vector C = n a 1 + ma 2 Chirality indices (n, m) uniquely define a tube Dresselhaus et al., Physics World

7 1. Structure of Single-walled carbon nanotube (SWCNT). Graphene sheet rolled up into a hollow cylinder graphene is rolled along Chiral vector into cylinder Chiral Vector C = n a 1 + ma 2 Chirality indices (n, m) uniquely define a tube Achiral Chiral Zigzag Armchair Dresselhaus et al., Physics World

8 1. Structure of Single-walled carbon nanotube (SWCNT). Diameter C a 0 2 d = = ( n + nm + π π m 2 ) Metallic if n m = 3q, q=1,2,3 Semiconducting if n m = 3 q ±1 a = A 0 = o Dresselhaus et al., Physics World

9 2. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states - Many CNT properties derived from Graphene - Origin of conductivity in Graphene - Zone folding approximation: graphene to CNT 9

10 2. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Orbital Energy Origin of conductivity in Graphene Orange: 2p x, 2p y, 2p z, Blue: 2s - 4 outer most shell electrons - energies are so close together, new orbtials formed by mixing orbitals World of Carbon, invsee.asu.edu/nmodules/carbonmod/bonding.html 10

11 2. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Sp 2 hybridization Sp 2 orbitals are trigonal planar 2p z orbital is not hybridized Orange: 2p x, 2p y, 2p z, Blue: 2s Orbital Energy Sp 2 hybridization Orbital Energy Orange: 2p z, Green: sp 2 11

z, Blue: 2s - overlapping between sp 2 orbitals - responsible for hexagonal network Sp 2 hybridization - no

12 2. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Orbital Energy Sigma bond: Orange: 2p x, 2p y, 2p z, Blue: 2s - overlapping between sp 2 orbitals - responsible for hexagonal network Sp 2 hybridization - no energy band close to Fermi level, doesn t contribute to conductivity Orbital Energy Orange: 2p z, Green: sp 2 12

of states Pi bond: - overlapping between 2p z orbitals in

13 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Pi bond: - overlapping between 2p z orbitals in side way manner - responsible for electrical conduction 13

14 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states - Dispersion obtained by tight binding approximation 3 empirical parameters: ε 2 p ~ 0. 28eV γ 0 ~ 2.97eV s0 ~ eV S. REICH, J. MAULTZSCH, C. THOMSEN, AND P. ORDEJON PHYSICAL REVIEW B 66, ~2002! 14

15 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Upper band: anti-pi bond, conduction band -Lower band: pi valence band -Meet at K point, metallic behavior in Graphene S. REICH, J. MAULTZSCH, C. THOMSEN, AND P. ORDEJON PHYSICAL REVIEW B 66, ~2002! 15

16 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states kz k q continuous along the tube Quantized along Circumference: - Only certain k vector is allowed along Circumference k q C = 2πq,q=integer - one line in Brillouin zone for each q C - allowed k-vectors on these lines. Dispersion of a (4,2) Chiral tube ** **R. Saito, et. al, Physical Properties of Carbon Nanotubes, Imperial College Press,

17 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states 1 ( k 3 1 k 2 ) -Only K point has energy band crossing Fermi level - Metallic if K point ( k1 k2) is allowed: K C = 1 1 2π k1 k2) ( na1 + ma ) = ( n m) = ( πq => n m = 3q where a 1 b1 = a2 b2 = 2π - (4,2) is a semi-conducting tube C Dispersion of a (4,2) Chiral tube ** **R. Saito, et. al, Physical Properties of Carbon Nanotubes, Imperial College Press,

18 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Dispersion of a (4,2) Chiral tube ** **R. Saito, et. al, Physical Properties of Carbon Nanotubes, Imperial College Press,

19 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Different between CNT and graphene: - Highly peaked DOS in 1D system Metallic Semiconducting [2] Raman resonance: Rao, Richter, Bandow, Chase, Eklund, Williams, Fang, Subbaswamy, Menon, Thess, Smalley, Dresselhaus, Dresselhaus 19

20 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Metallic: DOS is constant around Fermi level Metallic Semiconducting [2] Raman resonance: Rao, Richter, Bandow, Chase, Eklund, Williams, Fang, Subbaswamy, Menon, Thess, Smalley, Dresselhaus, Dresselhaus 20

21 2. Electronic properties Bonding in graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Metallic: DOS is non-zero around Fermi level Metallic Important in optical spectroscopy! Semiconducting: DOS is zero around Fermi level Semiconducting [2] Raman resonance: Rao, Richter, Bandow, Chase, Eklund, Williams, Fang, Subbaswamy, Menon, Thess, Smalley, Dresselhaus, Dresselhaus 21

22 3. Device Catalytic synthesis of SWCNT Field effect transistor CVD tubes: Furnance picture!!! -Mostly single-walled, 1-3nm -tens of micron in length -long, straight, in designated area -cannot control chirality -random orientation 22

23 3. Device Catalytic synthesis of SWCNT Field effect transistor Furnance picture!!! Growth Mechanism - Present of catalyst metal (Fe, Mb, Al) - ++ Mutual dissolution of carbon and metal at ~1000 C - Decompose and Defuse - Root growth: favor single walled CNT - Tip growth: favor multi-walled CNT Kong. J., Soh. H.T., Cassell. A.M., Quate. C.J., Nature, 395, 878.(1998) Qian D,Dickey E.C.,Andrews R,Jacques D,Center for applied energy research, Univ. of Kentucky 23

24 3. Device Catalytic synthesis of SWCNT Field effect transistor Growth process: 1. Furnace 2. Catalysts (Fe, Mb, Al) 3. Methane as carbon feedstock Kong. J., Soh. H.T., Cassell. A.M., Quate. C.J., Nature, 395, 878.(1998) 24

25 3. Device Catalytic synthesis of SWCNT Field effect transistor Device preparation: -CNT growth on catalysts site -Fabricate markers -Identify the location by markers 25

26 3. Device Catalytic synthesis of SWCNT Field effect transistor Device preparation: -contact electrodes by photolithography by picking the right electrodes Source Drain 26

27 3. Device Catalytic synthesis of SWCNT Field effect transistor Device structure: -CNT Field effect transistor -control the electric field at the CNT by back-gate -channel insulated with the back gate 27

28 3. Device Catalytic synthesis of SWCNT Field effect transistor Device preparation: -successful device image 28

29 4. Electronic transport Basic transport theory Transport of Ideal CNT Metallic versus semi-conducting Schottky barrier transistor Coulomb Blockade empty Conduction channel modulated by gate V G V G > 0 µ filled +Slides prepared by Brian Burke 29

30 4. Electronic transport Basic transport theory Transport of Ideal CNT Metallic versus semi-conducting Schottky barrier transistor Coulomb Blockade Conduction channel modulated by gate V G empty µ filled V G < 0 +Slides prepared by Brian Burke 30

31 4. Electronic transport Basic transport theory Transport of Ideal CNT Metallic versus semi-conducting Schottky barrier transistor Coulomb Blockade Level between source and drain is needed for conduction e - e - µ ε µ µ 1 µ 2 qv D = µ 1 - µ 2 µ 2 Source Channel Drain V D +Slides prepared by Brian Burke 31

32 4. Electronic transport Basic transport theory Transport of Ideal CNT Metallic versus semi-conducting Schottky barrier transistor Coulomb Blockade Metallic 32

33 4. Electronic transport Basic transport theory Transport of Ideal CNT Metallic versus semi-conducting Schottky barrier transistor Coulomb Blockade Ambipolar 9.0x10-6 Vds = 500mV Ids(A) V G (V) 33

34 4. Electronic transport Basic transport theory Transport of Ideal CNT Metallic versus semi-conducting Schottky barrier transistor Coulomb Blockade 34

detrapping of the defect change the current level Modeling electrostatic and quantum detection of molecules S. Vasudevan1, K. Walczak1, N.

35 5. Random Telegraph Signal Basic theory Other group s data Our data RTS origin - Charge trap defects inside SiO 2 or SiO 2 /CNT interface - defect filled: local electric field affect conductivity - trapped defect center => coulomb scattering center - charge trapping and detrapping of the defect change the current level Modeling electrostatic and quantum detection of molecules S. Vasudevan1, K. Walczak1, N. Kapur2, M. Neurock2, A.W. Ghosh1, in press S. Heinze, J. Tersoff, R Martel, V. Derycke, J. Appenzeller, Ph. Avouris Phys Rev Let., 89, (2002) 35

36 5. Random Telegraph Signal Basic theory Other group s data Our data RTS origin - defects level ε T ε T - control defect level by V G - emptied when above both fermi levels - filled if below both fermi levels - finite probability filled or empited Modeling electrostatic and quantum detection of molecules S. Vasudevan1, K. Walczak1, N. Kapur2, M. Neurock2, A.W. Ghosh1, in press S. Heinze, J. Tersoff, R Martel, V. Derycke, J. Appenzeller, Ph. Avouris Phys Rev Let., 89, (2002) 36

37 5. Random Telegraph Signal Basic theory Other group s data Our data RTS origin - defects level ε T - control the defect level by V G - emptied when above both fermi levels - filled if below both fermi levels ε T - finite probability filled or empited Modeling electrostatic and quantum detection of molecules S. Vasudevan1, K. Walczak1, N. Kapur2, M. Neurock2, A.W. Ghosh1, in press S. Heinze, J. Tersoff, R Martel, V. Derycke, J. Appenzeller, Ph. Avouris Phys Rev Let., 89, (2002) 37

38 5. Random Telegraph Signal Basic theory Other group s data Our data RTS origin - defects level ε T filled empty - control the defect level by V G - emptied when above both Fermi levels - filled if below both Fermi levels - finite probability filled or emptied if between Fermi levels Modeling electrostatic and quantum detection of molecules S. Vasudevan1, K. Walczak1, N. Kapur2, M. Neurock2, A.W. Ghosh1, in press F. Liu, K. L. Wang, C. Li, and C. Zhou, IEEE Transaction on Nanotechnology, 5, 411 (2006) 38

5. Random Telegraph Signal Basic theory Other group s data Our data RTS origin τ - capture time and emission time c τ e - detailed balance equation τ c ε 2exp[ T τ = e ε F κev G

39 5. Random Telegraph Signal Basic theory Other group s data Our data RTS origin τ - capture time and emission time c τ e - detailed balance equation τ c ε 2exp[ T τ = e ε F κev G T k B ] - switching frequently between discrete level if τ ~ c τ e so, ε T ε F κev G F. Liu, K. L. Wang, C. Li, and C. Zhou, IEEE Transaction on Nanotechnology, 5, 411 (2006) 39

40 5. Random Telegraph Signal Basic theory Other group s data Our data RTS origin τ c εt = 2exp[ τ e τ c log αv τ e G ε F κev k T B G ] F. Liu, K. L. Wang, C. Li, and C. Zhou, IEEE Transaction on Nanotechnology, 5, 411 (2006) 40

41 5. Random Telegraph Signal Basic theory Other group s data Our data claimed room temperature RTS never been analysed F. Liu, K. L. Wang, C. Li, and C. Zhou, IEEE Transaction on Nanotechnology, 5, 411 (2006) 41

42 5. Random Telegraph Signal Basic theory Other group s data Our data Well defined in Room temperature discrete current jumping in both sides Unexpected RTS windows 42

43 5. Random Telegraph Signal Basic theory Other group s data Our data See discrete jumping in both side of RTS windows τ c and τ e changing with V G 43

44 5. Random Telegraph Signal Basic theory Other group s data Our data Agreed with principle of detailed balance τ c τ τ e ε = 2exp[ T ε F κ V k B T e G ] τ c log αv τ e G 44

45 5. Random Telegraph Signal Basic theory Other group s data Our data Hysteresis effect due of water molecules on oxides surface Annealing in H 2 removed RTS 2 Hysteresis effect enhanced after annealing No confident explanation on the data yet Ids(A) 350x mV ->100mV, 5mV steps, after H 2 treatment Vgs(V) 45

46 6. Future works Explain our data, further characterization Decorate molecular defect on CNT FET, O 2, N 2 Identify corresponding RTS signature 46

47 7. Group, Collaborations: Advisor: Prof. Keith Williams Graduate student: Brian Burke, Jack Chan. Undergraduate student: Kenneth Evans, Andrew Spisak. Collaborator: Prof. Avik Ghosh, Kamil Walczak, Smitha Vasudevan. (theoretical) NSF award for Novel Transistor Research at the Nanoscale Prof. Joe Campbell Group (experimental). Future collaborator: CNMS in ORNL. End 47

48 48

49 49

50 3. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Ready to get E ( k ) and C C A B S. REICH, J. MAULTZSCH, C. THOMSEN, AND P. ORDEJON PHYSICAL REVIEW B 66, ~2002! 50

51 3. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states S. REICH, J. MAULTZSCH, C. THOMSEN, AND P. ORDEJON PHYSICAL REVIEW B 66, ~2002! 51

52 2. Structure of Single-walled carbon nanotube (SWCNT). a) Rolled up of a graphene sheet, graphene is a layer of graphite. b) Chirality vector: C=na 1 +ma 2, graphene is rolled along C into cylinder. c) Chirality indices (n, m) determines electronic band structure. d) diameter: C/pi=. e) Metallic if n-m=3q, semiconducting otherwise. f) talk about Brillouin zone? g) Physical properties: Electrically conductive High current carrying capacity Can be functionalized (doped). High Length/Diameter aspect ratio Extra ordinary mechanical properties, eg. Young Modulus>1T Pascal. Dresselhaus et al., Physics World

53 9.0x10-6 Vds = 500mV Ids(A) I V G (V) 53

54 5. Electronic transport Basic transport theory Transport of Ideal CNT Schottky barrier (SB) transistor Coulomb Blockade SB - formed between metal and semi-cond - IV G changes with dopant level: - Whole curve shifted - Shape doesn t change SB device IV G : - change with work function, i.e. metal - formed between semi-cond and metal - minimum current range almost unchanged - curve change shape S. Heinze, J. Tersoff, R Martel, V. Derycke, J. Appenzeller, Ph. Avouris Phys Rev Let., 89, (2002) 54

5. Electronic transport Basic transport theory Transport of Ideal CNT Schottky barrier (SB) transistor Coulomb Blockade SB - formed between metal and semi-cond - matching fermi level by electron

55 5. Electronic transport Basic transport theory Transport of Ideal CNT Schottky barrier (SB) transistor Coulomb Blockade SB - formed between metal and semi-cond - matching fermi level by electron flowing - build in voltage developed IV G changes with dopant level: - Whole curve shifted - Shape doesn t change SB device IV G : - change with work function, i.e. metal - formed between semi-cond and metal - minimum current range almost unchanged - curve change shape S. Heinze, J. Tersoff, R Martel, V. Derycke, J. Appenzeller, Ph. Avouris Phys Rev Let., 89, (2002) 55

56 56

57 2. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states Ingredients: Schrodinger s equation Hψ ( k) = Eψ ( k) Normalized 2p z orbitals of C atom ϕ(r) 2 atoms in graphene unit cell Bloch function of graphene sublattice 1 ik RA Φ A = e ϕ( r R N R A A ) 1 ik R B Φ B = e ϕ ( r R N R B B ) Eigenfunctions ψ ( k) = C Φ ( k) + C Φ ( k) A A B B Approximation: -Only nearest neighbor -Overlapping integral So is non-zero Ready to get E ( k ) and C C A B S. REICH, J. MAULTZSCH, C. THOMSEN, AND P. ORDEJON PHYSICAL REVIEW B 66, ~2002! 57

58 2. Electronic properties Bonding in graphene Tight Binding Description of graphene Dispersion of graphene Zone-folding Approximation 1D electronic density of states where S. REICH, J. MAULTZSCH, C. THOMSEN, AND P. ORDEJON PHYSICAL REVIEW B 66, ~2002! 58

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 ChiiDong Chen Institute of Physics, Academia Sinica chiidong@phys.sinica.edu.tw 02 27896766 Section 5.2.1 Nature of the Carbon Bond