SFH6A / SFH66 Optocoupler, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS Fast Switching Times Low CTR Degradation Low Coupling Capacitance Lead-free component Component in accordance to RoHS 2002/9/EC and WEEE 2002/96/EC 7448 A C 2 4 C 3 E e3 Pb Pb-free Agency Approvals UL77, File No. E2744 System Code H or J, Double Protection DIN EN 60747--2 (VDE0884) DIN EN 60747-- pending Available with Option Applications Switchmode power supply Telecom Battery powered equipment Description The SFH6A (DIP) and SFH66 (SMD) feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.4 mm lead spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 6090 (DIN VDE 080) for reinforced insulation up to an operation voltage of 400 V RMS or DC. Specifications subject to change. Order Information Part Remarks SFH6A- CTR 40-80 %, DIP-4 SFH6A-2 CTR 63-2 %, DIP-4 SFH6A-3 CTR 00-200 %, DIP-4 SFH6A-4 CTR 60-320 %, DIP-4 CTR 40-80 %, SMD-4 CTR 63-2 %, SMD-4 CTR 00-200 %, SMD-4 SFH66-4 CTR 60-320 %, SMD-4 SFH6A-X006 CTR 40-80 %, DIP-4 400 mil (option 6) SFH6A-X007 CTR 40-80 %, SMD-4 (option 7) SFH6A-2X006 CTR 63-2 %, DIP-4 400 mil (option 6) SFH6A-2X007 CTR 63-2 %, SMD-4 (option 7) SFH6A-2X009 CTR 63-2 %, SMD-4 (option 9) SFH6A-3X006 CTR 00-200 %, DIP-4 400 mil (option 6) SFH6A-3X007 CTR 00-200 %, SMD-4 (option 7) SFH6A-3X008 CTR 00-200 %, SMD-4 (option 8) SFH6A-3X009 CTR 00-200 %, SMD-4 (option 9) SFH6A-4X006 CTR 60-320 %, DIP-4 400 mil (option 6) SFH6A-4X007 CTR 60-320 %, SMD-4 (option 7) SFH6A-4X008 CTR 60-320 %, SMD-4 (option 8) SFH6A-4X009 CTR 60-320 %, SMD-4 (option 9) For additional information on the available options refer to Option Information. See TAPE AND REEL Section for 4-pin optocouplers T0 with 90 rotation.
SFH6A / SFH66 VISHAY Absolute Maximum Ratings T amb = 2 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit Reverse voltage V R 6.0 V DC Forward current 60 ma Surge forward current t p 0 µs SM 2. A Power dissipation P diss 00 mw Output Parameter Test condition Symbol Value Unit Collector-emitter voltage V CE 70 V Emitter-collector voltage V CEO 7.0 V Collector current I C 0 ma t p.0 ms I C 00 ma Power dissipation P diss 0 mw Coupler Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector, refered to climate DIN 40046, part 2, Nov. 74 t =.0 s V ISO 300 V RMS Creepage 7.0 mm Clearance 7.0 mm Insulation thickness between 0.4 mm emitter and detector Comparative tracking index per 7 DIN IEC 2/VDE 0303, part Isolation resistance V IO = 00 V, T amb = 2 C R IO 0 2 Ω V IO = 00 V, T amb = 00 C R IO 0 Ω Storage temperature range T stg - to + 0 C Ambient temperature range T amb - to + 00 C Soldering temperature max. 0 s, Dip soldering distance to seating plane. mm T sld 260 C 2
SFH6A / SFH66 200 P tot Power Dissipation (mw) 8483 0 00 0 Diode Phototransistor 0 0 2 0 7 00 2 0 T amb Ambient Temperature ( C ) Figure. Permissible Power Dissipation vs. Ambient Temperature Electrical Characteristics T amb = 2 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max Unit Forward voltage = 60mA V F.2.6 V Reverse current V R = 6.0 V I R 0.0 0 µa Capacitance V R = 0 V, f =.0 MHz C O 3 pf Thermal resistance R thja 70 K/W Output Parameter Test condition Part Symbol Min Typ. Max Unit Collector-emitter capacitance V CE =.0 V, f =.0 MHz C CE.2 pf Thermal resistance R thja 00 K/W Collector-emitter leakage current V CE = 0 V SFH6A- SFH6A-2 SFH6A-3 SFH6A-4 SFH66-4 I CEO 2.0 0 na I CEO 2.0 0 na I CEO.0 00 na I CEO.0 00 na Coupler Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter saturation = 0 ma, I C = 2. ma V CEsat 0.2 0.4 V voltage Coupling capacitance C C 0.4 pf 3
SFH6A / SFH66 VISHAY Current Transfer Ratio Parameter Test condition Part Symbol Min Typ. Max Unit I C / = 0 ma, V CE =.0 V SFH6A- CTR 40 80 % SFH6A-2 CTR 63 2 % SFH6A-3 CTR 00 200 % SFH6A-4 SFH66-4 CTR 60 320 % =.0 ma, V CE =.0 V SFH6A- CTR 3 30 % SFH6A-2 CTR 22 4 % SFH6A-3 CTR 34 70 % SFH6A-4 SFH66-4 CTR 6 90 % Switching Characteristics Switching Non-saturated Parameter Test condition Symbol Min Typ. Max Unit Rise Time = 0 ma, V CC =.0 V, T A = 2 C, R L = 7 Ω t r 2.0 µs Fall Time = 0 ma, V CC =.0 V, T A = 2 C, R L = 7 Ω t f 2.0 µs Turn-on time = 0 ma, V CC =.0 V, T A = 2 C, R L = 7 Ω t on 3.0 µs Turn-off time = 0 ma, V CC =.0 V, T A = 2 C, R L = 7 Ω t off 2.3 µs Cut-off frequency = 0 ma, V CC =.0 V, T A = 2 C, R L = 7 Ω f ctr 20 khz Switching Saturated Parameter Test condition Part Symbol Min Typ. Max Unit Rise time V CC =.0 V, T A = 2 C, R L = kω, = 20 ma SFH6A- t r 2.0 µs V CC =.0 V, T A = 2 C, R L = kω, = 0 ma SFH6A-2 t r 3.0 µs SFH6A-3 t r 3.0 µs V CC =.0 V, T A = 2 C, R L = kω, =.0 ma SFH6A-4 t r 4.6 µs SFH66-4 Fall time V CC =.0 V, T A = 2 C, R L = kω, = 20 ma SFH6A- t f µs V CC =.0 V, T A = 2 C, R L = kω, = 0 ma SFH6A-2 t f 4 µs SFH6A-3 t f 4 µs V CC =.0 V, T A = 2 C, R L = kω, =.0 ma SFH6A-4 t f µs SFH66-4 Turn-on time V CC =.0 V, T A = 2 C, R L = kω, = 20 ma SFH6A- t on 3.0 µs V CC =.0 V, T A = 2 C, R L = kω, = 0 ma SFH6A-2 t on 4.2 µs SFH6A-3 t on 4.2 µs V CC =.0 V, T A = 2 C, R L = kω, =.0 ma SFH6A-4 SFH66-4 t on 6.0 µs 4
SFH6A / SFH66 Parameter Test condition Part Symbol Min Typ. Max Unit Turn-off time V CC =.0 V, T A = 2 C, R L = kω, = 20 ma SFH6A- V CC =.0 V, T A = 2 C, R L = kω, = 0 ma V CC =.0 V, T A = 2 C, R L = kω, =.0 ma SFH6A-2 SFH6A-3 SFH6A-4 SFH66-4 Typical Characteristics (Tamb = 2 C unless otherwise specified) t off 8 µs t off 23 µs t off 23 µs t off 2 µs R L =7Ω I C V CC =V I C 0 3 % 0 2 IF =0mA,VCE =.0 V 4 3 2 47 Ω isfh6a_0 isfh6a_0 0 2 0 2 0 C 7 T A Figure 2. Linear Operation (without Saturation) Figure 4. Current Transfer Ratio (typical) vs. Temperature 30 ma =4 ma Ω V CC =V I C 20 2 ma 0 ma 8.0 ma 47 Ω 0 6.0 ma 4.0 ma.0 ma 2.0 ma 0 0 0 V V CE isfh6a_02 isfh6a_04 Figure 3. Switching Operation (with Saturation) Figure. Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage
SFH6A / SFH66 VISHAY V F.2 V. 2 0 7.0 isfh6a_0 0.9 0 0 0 0 ma 0 2 Figure 6. Diode Forward Voltage (typ.) vs. Forward Current 20 pf f =.0 MHz C 0 CCE isfh6a_06 0 0 2 0 0 0 0 V 0 2 Ve Figure 7. Transistor Capacitance (typ.) vs. Collector-Emitter Voltage 0 4 ma 0 3 D=0 0.00 0.0 0.02 0.0 0. D= t p T t p T 0 2 isfh6a_07 0 0.2 0. DC Pulse cycle D = parameter 0 0 4 0 3 0 2 0 0 0 s 0 tp Figure 8. Permissible Pulse Handling Capability Forward Current vs. Pulse Width 6
SFH6A / SFH66 Package Dimensions in Inches (mm) 2 pin one ID.2 (6.48).268 (6.8) ISO Method A 3 4.79 (4.).90 (4.83).030 (.76).04 (.4).03 (.79) typ..00 (.27) typ..300 (7.62) typ. i78027 4 typ..08 (.46).022 (.6).30 (3.30).0 (3.8).020 (.08 ).03 (.89).00 (.27).00 (2.4) 0 3 9.008 (.20).02 (.30).230 (.84).20 (6.3).0 (2.79).30 (3.30) Package Dimensions in Inches (mm) SMD.2 (6.48).268 (6.8) pin one ID.00 (2.4) R.00 (.2).030 (.76).070 (.78).3 (8.00) min.060 (.2).43 (.0).030 (.76).04 (.4) 3 4.79 (4.).90 (4.83).03 (.79) typ..30 (3.30).0 (3.8).37 (9.2).30 (0.03).296 (7.2).32 (7.90) 0.00 (.2) typ. ISO Method A i78029 4 typ..00 (2.4)typ..00 (.27) typ..0098 (.249).03 (.02) Lead coplanarity.004 max..3 (8.00) min..020 (.08).040 (.02) 3 7 7
SFH6A / SFH66 VISHAY 0040 (.02) 0098 (.249) 8486 Option 9.37 (9.3).39 (0.03).300 (7.62)ref..020 (.).040 (.02).3 (8.00) min..02 (.30) typ. max. 8
SFH6A / SFH66 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/40/EEC and 9/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 33, D-7402 Heilbronn, Germany Telephone: 49 (0)73 67 283, Fax number: 49 (0)73 67 2423 9