ILD1/ 2/ 5 / ILQ1/ 2/ 5
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1 ILD/ 2/ 5 / ILQ/ 2/ 5 Optocoupler, Phototransistor Output (Dual, Quad hannel) Features urrent Transfer Ratio at I F = 0 m Isolation Test Voltage, 5300 V RMS Lead-free component omponent in accordance to RoHS 2002/95/E and WEEE 2002/96/E Dual hannel E E gency pprovals UL577, File No. E52744 System ode H or J, Double Protection S 9375 BSI IE60950 IE60065 DIN EN (VDE0884) DIN EN pending vailable with Option FIMKO Quad hannel E E 2 E Description The ILD/ 2/ 5/ ILQ/ 2/ 5 are optically coupled isolated pairs employing Gas infrared LEDs and silicon NPN phototransistor. Signal information, including a D level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/ 2/ 5/ ILQ/ 2/ 5 are espe- i E e3 Pb Pb-free cially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. lso these couplers can be used to replace relays and transformers in many digital interface applications such as TR modulation. The ILD/ 2/ 5 has two isolated channels in a single DIP package and the ILQ/ 2/ 5 has four isolated channels per package. Order Information Part Remarks ILD TR > 20 %, DIP-8 ILQ TR > 20 %, DIP-6 TR > 00 %, DIP-8 TR > 00 %, DIP-6 TR > 50 %, DIP-8 TR > 50 %, DIP-6 ILD-X007 TR > 20 %, SMD-8 (option 7) ILD-X009 TR > 20 %, SMD-8 (option 9) -X006 TR > 00 %, DIP mil (option 6) -X007 TR > 00 %, SMD-8 (option 7) -X009 TR > 00 %, SMD-8 (option 9) -X009 TR > 50 %, SMD-8 (option 9) ILQ-X009 TR > 20 %, SMD-6 (option 9) -X009 TR > 00 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. Rev..4, 05-Nov-04
2 ILD/ 2/ 5 / ILQ/ 2/ 5 bsolute Maximum Ratings T amb = 25, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit Reverse voltage V R 6.0 V Forward current I F 60 m Surge current I FSM 2.5 Power dissipation P diss 00 mw Derate linearly from 25.3 mw/ Output Parameter Test condition Part Symbol Value Unit ollector-emitter reverse voltage ILD V ER 50 V ILQ V ER 50 V V ER 70 V V ER 70 V V ER 70 V V ER 70 V ollector current I 50 m t <.0 ms I 400 m Power dissipation P diss 200 mw Derate linearly from mw/ oupler Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector referred to standard climate 25 / 50 % RH, DIN 5004) V ISO 5300 V RMS reepage 7.0 mm learance 7.0 mm Isolation resistance V IO = 500 V, T amb = 25 R IO 0 2 Ω V IO = 500 V, T amb = 00 R IO 0 Ω Package power dissipation P tot 250 mw Derate linearly from mw/ Storage temperature T stg - 40 to + 50 Operating temperature T amb - 40 to + 00 Junction temperature T j 00 Soldering temperature 2.0 mm from case bottom T sld Rev..4, 05-Nov-04
3 ILD/ 2/ 5 / ILQ/ 2/ 5 Electrical haracteristics T amb = 25, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 60 m V F V Reverse current V R = 6.0 V I R µ apacitance V R = 0 V, f =.0 MHz O 25 pf Thermal resistance, junction to lead T thjl 750 K/W Output Parameter Test condition Symbol Min Typ. Max Unit ollector-emitter capacitance V E = 5.0 V, f =.0 MHz E 6.8 pf ollector-emitter leakage V VE = 0 V I EO n current Saturation voltage, collectoremitter I E =.0 m, I B = 20 µ V EST V D forward current gain V E = 0 V, I B = 20 µ HFE D forward current gain V E = 0.4 V, I B = 20 µ HFE sat saturated Thermal resistance, junction to lead R thjl 500 K/W oupler Parameter Test condition Symbol Min Typ. Max Unit apacitance (input-output) V IO = 0 V, f =.0 MHz IO 0.8 pf urrent Transfer Ratio Parameter Test condition Part Symbol Min Typ. Max Unit urrent Transfer Ratio (collector-emitter saturated) urrent Transfer Ratio (collector-emitter) I F = 0 m, V E = 0.4 V I F = 0 m, V E = 0 V ILD ILQ ILD ILQ TR Esat 75 % TR Esat 70 % TR Esat 00 % TR E % TR E % TR E % Rev..4, 05-Nov-04 3
4 ILD/ 2/ 5 / ILQ/ 2/ 5 Typical Switching Times Non-saturated Switching Timing Parameter urrent Delay Rise time Storage Fall time Propagation H-L Test condition V E = 5.0 V, R L = 75 Ω, 50 % of V PP Propagation L-H Symbol I F t D t r t S t f t PHL t PLH Unit m µs µs µs µs µs µs ILD ILQ Saturated Switching Timing Parameter urrent Delay Rise time Storage Fall time Propagation H-L Test condition V E = 0.4 V, R L =.0 kω, V = 5.0 V, V TH =.5 V Propagation L-H Symbol I F t D t r t S t f t PHL t PLH Unit m µs µs µs µs µs µs ILD ILQ ommon Mode Transient Immunity Parameter Test condition Symbol Min Typ. Max Unit ommon mode rejection, output high ommon mode rejection, output low ommon mode coupling capacitance V M = 50 V P-P, R L =.0 kω, I F = 0 m V M = 50 V P-P, R L =.0 kω, I F = 0 m M H 5000 V/µs M L 5000 V/µs M 0.0 pf 4 Rev..4, 05-Nov-04
5 ILD/ 2/ 5 / ILQ/ 2/ 5 Typical haracteristics (Tamb = 25 unless otherwise specified) I F V =5 V I F =0 m F=0 KHz, DF=50% V O R L =75 Ω V O t D t R t PLH V TH =.5 V iild_0 t PHL t S t F iild_04 Figure. Non-saturated Switching Schematic Figure 4. Saturated Switching Timing I F t PLH V O iild_02 t D t R tphl t S t F 50% V F - Forward Voltage - V iild_ T = -55 T = 25 T =00 0 I F - Forward urrent - m 00 Figure 2. Non-saturated Switching Timing Figure 5. Normalized Non-Saturated and Saturated TR vs. LED urrent iild_03 F=0 KHz, DF=50% I F =0 m V =5 V R L V O TRNF - Normalized TR Factor Normalized to: V E =0V,I F =0m T = 25 TRce(sat) V E = 0.4 V NTR NTR(ST) 0 00 I F - LED urrent - m iild_06 Figure 3. Saturated Switching Schematic Figure 6. Normalized Non-Saturated and Saturated TR vs. LED urrent Rev..4, 05-Nov-04 5
6 ILD/ 2/ 5 / ILQ/ 2/ 5 TRNF - Normalized TR Factor iild_ Normalized to: VE =0V,IF = 0 m, T= 25 ˇ TRce(sat) VE = 0.4 V T= 50 NTR NTR(ST) 0 I F - LED urrent - m 00 IE - ollector urrent - m iild_ IF - LED urrent - m Figure 7. Normalized Non-Saturated and Saturated TR vs. LED urrent Figure 0. ollector-emitter urrent vs. Temperature and LED urrent TR - Normalized TR Factor Normalized to: V E =0V,I F =0m T = 25 TRce(sat) V E = 0.4 V T = 70 NTR NTR(ST) 0 I F - LED urrent - m 00 IEO - ollector-emitter - n Vce=0V Typical T - mbient Temperature - 00 iild_08 iild_ Figure 8. Normalized Non-Saturated and Saturated TR vs. LED urrent Figure. ollector-emitter Leakage urrent vs.temp. NTR - Normalized TR Normalized to: V E =0 V,I F = 0 m, T = 25 TRce(sat) V E = 0.4 V T = 85 NTR NTR(ST) I F - LED urrent - m t plh - Propagation Low-High µs Ta = 25, IF = 0 m Vcc=5V,Vth=.5V tphl tplh 0 R L - ollector Load Resistor - kω t phl - Propagation High-Low µs iild_09 iild_2 Figure 9. Normalized Non-Saturated and Saturated TR vs. LED urrent Figure 2. Propagation Delay vs. ollector Load Resistor 6 Rev..4, 05-Nov-04
7 ILD/ 2/ 5 / ILQ/ 2/ 5 Package Dimensions in Inches (mm) pin one ID.255 (6.48).268 (6.8) ISO Method i (0.76).045 (.4) 4 typ..379 (9.63).390 (9.9).03 (0.79).30 (3.30).50 (3.8).300 (7.62) typ..050 (.27).08 (.46).020 (.5 ).035 (.89 ) (.56).00 (2.54) typ..008 (.20).02 (.30).230(5.84).0 (2.79).250(6.35).30 (3.30) Package Dimensions in Inches (mm) (9.77 ).790 (20.07) pin one ID.255 (6.48).265 (6.8) ISO Method.030 (.76).045 (.4).03(.79).300 (7.62) typ (.46).022 (.56).00 (2.54)typ..30 (3.30).50 (3.8).020(.5).035 (.89).050 (.27) 0 typ (.20).02 (.30).0 (2.79).30 (3.30).230 (5.84).250 (6.35) i78007 Rev..4, 05-Nov-04 7
8 ILD/ 2/ 5 / ILQ/ 2/ 5 Option 6 Option 7 Option (0.36).39 (9.96).307 (7.8).29 (7.4).04 (0.35).00 (0.25).400 (0.6).430 (0.92).028 (0.7) MIN..300 (7.62) TYP..35 (8.0) MIN..33 (8.4) MIN..406 (0.3) MX..80 (4.6).60 (4.).0040 (.02).0098 (.249).375 (9.53).395 (0.03).300 (7.62) ref..020 (.5).040 (.02).35 (8.00) min..02 (.30) typ. 5 max Rev..4, 05-Nov-04
9 ILD/ 2/ 5 / ILQ/ 2/ 5 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London mendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. nnex, B and list of transitional substances of the Montreal Protocol and the London mendments respectively 2. lass I and II ozone depleting substances in the lean ir ct mendments of 990 by the Environmental Protection gency (EP) in the US 3. ouncil Decision 88/540/EE and 9/690/EE nnex, B and (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. ll operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D Heilbronn, Germany Telephone: 49 (0) , Fax number: 49 (0) Rev..4, 05-Nov-04 9
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