IL74/ ILD74/ ILQ74. Optocoupler, Phototransistor Output (Single, Dual, Quad Channel) VISHAY. Vishay Semiconductors
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1 VISHY IL74/ ILD74/ ILQ74 Optocoupler, Phototransistor Output (Single, Dual, Quad hannel) Features IL74/ ILD74/ ILQ74 TTL ompatible Transfer Ratio, 35 % Typical oupling apacitance, pf Single, Dual, & Quad hannel Industry Standard DIP Package Single hannel Dual hannel N B E gency pprovals UL - File No. E52744 System ode H or J S 9375 BSI IE60950 IE60965 DIN EN (VDE0884) DIN EN pending vailable with Option, X00 Suffix FIMKO Quad hannel E E 6 E 5 4 Description The IL74/ ILD74/ ILQ74 is an optically coupled pair with a GaIs infrared LED and a silicon NPN phototransistor. Signal information, including a D level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.the IL74/ ILD74/ ILQ74 is especially for driving medium-speed logic, where it may be used to elimi- i E 2 E 0 9 E nate troublesome ground loop and noise problems. lso it can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as TR modulation. The ILD74 has two isolated channels in a single DIP package; the ILQ74 has four isolated channels per package. Order Information Part Remarks IL74 TR D 35 %, Single hannel DIP-6 ILD74 TR D 35 %, Dual hannel DIP-8 ILQ74 TR D 35 %, Quad hannel DIP-6 IL74-X006 TR D 35 %, Single hannel DIP mil (option 6) ILD74-X006 TR D 35 %, Dual hannel DIP mil (option 6) ILD74-X007 TR D 35 %, Dual hannel SMD-8 (option 7) ILD74-X009 TR D 35 %, Dual hannel SMD-8 (option 9) ILQ74-X009 TR D 35 %, Quad hannel SMD-6 (option 9) For additional information on the available options refer to Option Information. Rev..3, 9-pr-04
2 IL74/ ILD74/ ILQ74 VISHY bsolute Maximum Ratings T amb = 25, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input (each channel) Parameter Test condition Symbol Value Unit Peak reverse voltage V R 3.0 V Forward continuous current I F 60 m Power dissipation P diss 00 mw Derate linearly from 55 %.33 mw/ Output Parameter Test condition Symbol Value Unit ollector-emitter breakdown voltage BV EO 20 V Emitter-collector breakdown voltage BV EO 5.0 V ollector-base breakdown voltage BV BO 70 V Power dissipation P diss 50 mw Derate linearly from mw/ oupler Parameter Test condition Part Symbol Value Unit Isolation test voltage t =.0 sec. V ISO 5300 V RMS Isolation resistance V IO = 500 V, T = 25 R IO 0 2 Ω V IO = 500 V, T = 00 R IO 0 Ω Total package dissipation IL74 P tot 200 mw ILD74 P tot 400 mw ILQ74 P tot 500 mw Derate linearly from 25 IL mw/ ILD mw/ ILQ mw/ reepage 7.0 mm learance 7.0 mm Storage temperature T stg - 55 to + 50 Operating temperature T amb - 55 to + 00 Lead soldering time at sec. 2 Rev..3, 9-pr-04
3 VISHY IL74/ ILD74/ ILQ74 Electrical haracteristics T amb = 25, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 20 m V F.3.5 V Reverse current V R = 3.0 V I R µ apacitance V R = 0 V O 25 pf Output Parameter Test condition Symbol Min Typ. Max Unit ollector-emitter breakdown I =.0 m BV EO V voltage ollector-emitter leakage V E = 5.0 V, I F = 0 I EO n current ollector-emitter capacitance V E = 0, f =.0 MHz E pf oupler Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage collectoremitter I = 2.0 m, I F = 6 m V Esat 0.3 V Resistance, input to output R IO 00 GΩ apacitance (input-output) IO pf urrent Transfer Ratio Parameter Test condition Symbol Min Typ. Max Unit D urrent Transfer Ratio I F = 6 m, V E = 5.0 V TR D % Rev..3, 9-pr-04 3
4 IL74/ ILD74/ ILQ74 VISHY Switching haracteristics Parameter Test condition Symbol Min Typ. Max Unit Switching times R L = 00 Ω, V E = 0 V, t on, t off 3.0 µs I = 2.0 m Typical haracteristics (T amb = 25 unless otherwise specified) VF - Forward Voltage - V Ta = 55 Ta = 25 Ta = 85 NTR - Normalized TR.5.0 VE =0V,IF = 0 m, T= 25 ˇ TRce(sat) VE = 0.4 V T= 50 NTR(ST) NTR IF - Forward urrent - m I F - LED urrent - m 00 iil74_0 iil74_03 Fig. Forward Voltage vs. Forward urrent Fig. 3 Normalized Non-Saturated and Saturated TR vs. LED urrent NTR - Normalized TR.5.0. V E =0V,I F =0m T = 25 TRce(sat) V E = 0.4 V 0 I F - LED urrent - m NTR(ST) NTR 00 NTR - Normalized TR.5.0. V E =0V,I F =0m T = 25 TRce(sat) V E = 0.4 V T = 70 0 I F - LED urrent - m NTR(ST) NTR 00 iil74_02 iil74_04 Fig. 2 Normalized Non-Saturated and Saturated TR vs. LED urrent Fig. 4 Normalized Non-Saturated and Saturated TR vs. LED urrent 4 Rev..3, 9-pr-04
5 VISHY IL74/ ILD74/ ILQ74 NTR - Normalized TR iil74_ V E =0 V,I F = 0 m, T = 25 TRce(sat) V E = 0.4 V T = 85 NTR(ST) NTR I F - LED urrent - m NTRcb - Normalized TRcb iil74_ IF =0 m Vcb = 9.3 V Ta = IF - LED urrent - m Fig. 5 Normalized Non-Saturated and Saturated TR vs. LED urrent Fig. 8 Normalized TRcb vs. LED urrent and Temp IE - ollector urrent - m Icb - ollector Base Photocurrent - µ Ta = 25 Icb =.0357 *IF ^.363 iil74_ I F - LED urrent - m iil74_ IF - LED urrent - m 00 Fig. 6 ollector-emitter urrent vs. Temperature and LED urrent Fig. 9 ollector Base Photocurrent vs. LED urrent IEO - ollector-emitter - n iil74_ Vce=0V Typical T - mbient Temperature - 00 Normalized Photocurrent iil74_0..0. If=0m,Ta=25 0 I F - LED urrent - m NIB-Ta=-20 NIb,Ta=25 NIb,Ta=50 NIb,Ta=70 00 Fig. 7 ollector-emitter Leakage urrent vs.temp. Fig. 0 Normalized Photocurrent vs. I F and Temp. Rev..3, 9-pr-04 5
6 IL74/ ILD74/ ILQ74 VISHY NHFE - Normalized HFE Ib=20µ 25 Vce=0V Ta = Ib - Base urrent - µ iil74_ Fig. Normalized Non-saturated HFE vs. Base urrent and Temperature NHFE(sat) - Normalized Saturated HFE iil74_ Vce=0.4 V Ib - Base urrent - µ VE =0V I B =20µ T = 25 Fig. 2 Normalized Saturated HFE vs. Base urrent and Temperature tplh - Propagation Delay µs iil74_ Ta = 25, IF = 0 m Vcc=5V,Vth=.5V tphl tplh 0 RL - ollector Load Resistor - kω tphl - Propagation Delay µs Fig. 3 Propagation Delay vs. ollector Load Resistor 6 Rev..3, 9-pr-04
7 VISHY IL74/ ILD74/ ILQ74 Package Dimensions in mm 4770 Package Dimensions in Inches (mm) pin one ID.255 (6.48).268 (6.8) ISO Method i (0.76).045 (.4) 4 typ..379 (9.63).390 (9.9).03 (0.79).30 (3.30).50 (3.8).300 (7.62) typ..050 (.27).08 (.46).020 (.5 ).035 (.89 ) (.56).00 (2.54) typ..008 (.20).02 (.30).230(5.84).0 (2.79).250(6.35).30 (3.30) Rev..3, 9-pr-04 7
8 IL74/ ILD74/ ILQ74 VISHY Package Dimensions in Inches (mm) (9.77 ).790 (27) pin one ID.255 (6.48).265 (6.8) ISO Method.030 (.76).045 (.4).03(.79).300 (7.62) typ (.46).022 (.56).00 (2.54)typ..30 (3.30).50 (3.8).020(.5).035 (.89).050 (.27) 0 typ (.20).02 (.30).0 (2.79).30 (3.30).230 (5.84).250 (6.35) i78007 Option 6 Option 7 Option (0.36).39 (9.96).307 (7.8).29 (7.4).04 (0.35).00 (0.25).400 (0.6).430 (0.92).028 (0.7) MIN..300 (7.62) TYP..35 (8.0) MIN..33 (8.4) MIN..406 (0.3) MX..80 (4.6).60 (4.).0040 (.02).0098 (.249).375 (9.53).395 (3).300 (7.62) ref..020 (.5).040 (.02).35 (8.00) min..02 (.30) typ. 5 max Rev..3, 9-pr-04
9 VISHY IL74/ ILD74/ ILQ74 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London mendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. nnex, B and list of transitional substances of the Montreal Protocol and the London mendments respectively 2. lass I and II ozone depleting substances in the lean ir ct mendments of 990 by the Environmental Protection gency (EP) in the US 3. ouncil Decision 88/540/EE and 9/690/EE nnex, B and (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. ll operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D Heilbronn, Germany Telephone: 49 (0) , Fax number: 49 (0) Rev..3, 9-pr-04 9
10 This datasheet has been download from: Datasheets for electronics components.
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