LH1532AAC/ AACTR/ AB. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors
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1 Dual 1 Form A Solid State Relay Features Dual Channel (LH15) Current Limit Protection Isolation Test Voltage 53 V RMS Typical R ON Ω Load Voltage 35 V High Surge Capability Clean Bounce Free Switching Low Power Consumption SMD Lead Available on Tape and Reel Lead-free component Component in accordance to RoHS 2/95/EC and WEEE 2/96/EC Agency Approvals UL1577, File No. E52744 System Code H or J, Double Protection CSA - Certification BSI/BABT Cert. No. 79 DIN EN (VDE884) DIN EN pending FIMKO Approval Applications General Telecom Switching - On/off Hook Control - Ring Delay - Dial Pulse - Ground Start - Ground Fault Protection Instrumentation Industrial Controls i17934 DIP S1 S2 S1' S2' SMD S1 S1' S2 S2' e3 Pb Pb-free Description The LH1532 dual 1 Form A relays are SPST normally open switches that can replace electromechanical relays in many applications. They are constructed using a GaAIAs LED for actuation control and an integrated monolithic die for the switch output. The die, fabricated in a high-voltage dielectrically isolated technology is comprised of a photodiode array, switch control circuitry, and MOSFET switches. In addition, the LH1532 SSRs employ current-limiting circuitry, enabling them to pass FCC and other regulatory surge requirements when overvoltage protection is provided. Order Information Part LH1532AAC LH1532AACTR Remarks Tubes, SMD-8 Tape and Reel, SMD-8 LH1532AB Tubes, DIP-8 1
2 Absolute Maximum Ratings, T amb = 25 C Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Ratings for extended periods of time can adversely affect reliability. SSR Parameter Test condition Symbol Value Unit LED continuous forward current I F 5 ma LED reverse voltage I R 1 µa V R 8. V DC or peak AC load voltage I L 5 µa V L 35 V Continuous DC load current, I L 1 ma one pole operating Continuous DC load current, I L 11 ma two poles operating Peak load current (single shot) t = ms I P 2) Ambient temperature range T amb - to + 85 C Storage temperature range T stg - to + 15 C Pin soldering temperature t = 1 s max T sld 2 C Input/output isolation test voltage t = 1. s V ISO 53 V RMS Pole-to-pole isolation voltage (S1 to S2) 1), (dry air, dust free, at sea level) Output power dissipation (continuous) 1) Breakdown occurs between the output pins external to the package. 2) Refer to Current Limit Performance Application Note for a discussion relay operation during transient currents. 1 V P diss mw Electrical Characteristics, T amb = 25 C Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max Unit LED forward current, I L = ma, t = 1 ms I Fon ma switch turn-on LED forward current, V L = ± 3 V I Foff.2.9 ma switch turn-off LED forward voltage I F = 1 ma V F V Output Parameter Test condition Symbol Min Typ. Max Unit ON-resistance I F = 5. ma, I L = 5 ma R ON Ω OFF-resistance I F = ma, V L = ± V R OFF.5 5 GΩ Current limit I F = 5. ma, t = 5. ms, V L = ± 6. V I LMT ma Off-state leakage current I F = ma, V L = ± V I O.2 na I F = ma, V L = ± 35 V I O 1. µa 2
3 Parameter Test condition Symbol Min Typ. Max Unit Output capacitance I F = ma, V L = 1. V C O 55 pf I F = ma, V L = 5 V C O 1 pf Pole-to-pole capacitance I F = 5. ma.5 pf (S1 to S2) Switch offset I F = 5. ma V OS.15 V Transfer Parameter Test condition Symbol Min Typ. Max Unit Capacitance (input-output) V ISO = 1. V C IO 1.1 pf Turn-on time I F = 5. ma, I L = 5 ma t on ms Turn-off time I F = 5. ma, I L = 5 ma t off ms Typical Characteristics (Tamb = 25 C unless otherwise specified) Load Current (ma) 1 ilh1532ab_ I Fon = 5. to ma I Fon = 2. ma I Fon = 3. ma I Fon = 4. ma - - Figure 1. Recommended Operating Conditions LED Forward Current for Switch Turn-on (%), ilh1532ab_ IL = ma - Figure 3. LED Current for Switch Turn-on vs. Temperature LED Forward Voltage (V) ilh1532ab_1 I F =ma 1.2 I F = 1. ma 1.1 I F = 2. ma I F = 5. ma 1. I F =1mA - - I F =5mA Figure 2. LED Voltage vs. Temperature Change in Current Limit (%) ilh1532ab_ I F = 5. ma t = 5. ms V L = SEE ELEC. CHAR. - Figure 4. Current Limit vs. Temperature 3
4 LED Forward Voltage (V) 1. IL = ma 1.15 TYP. 1.1 MIN ilh1532ab_4 Capacitance (pf) ilh1532ab_7 7 IF =ma f = 1. MHz Applied Voltage (V) Figure 5. LED Dropout Voltage vs. Temperature Figure 8. Switch Capacitance vs. Applied Voltage Change in ON-resistance (%) ilh1532ab_ I L =5mA - Figure 6. ON-Resistance vs. Temperature Insertion Loss (db).3.25 RL = Ω ilh1532ab_ Frequency (Hz) Figure 9. Insertion Loss vs. Frequency ac/dc On-resistance Variation (%) Normalized to Data Sheet R ON Specification at I IF = 5. ma ilh1532ab_ I L =5mA LED Forward Current (ma) Isolation (db) ilh1532ab_9 V P =1V R L =5Ω ˇ Frequency (Hz) Figure 7. Variation in ON-Resistance vs. LED Current Figure 1. Output Isolation 4
5 Off State Leakage Current ( na ) T=25 C Switch Offset Voltage (µv) IF = 5. ma Load Voltage ( V ) ilh1532ab_ Figure 11. Leakage Current vs. Applied Voltage Figure 14. Switch Offset Voltage vs. Temperature 1.6 Off State Leakage Current ( na ) 1 T=85 C T=75 C T=5 C Switch Offset Voltage (µv) Load Voltage ( V ) ilh1532ab_ LED Forward Current (ma) Figure 12. Leakage Current vs. Applied Voltage at Elevated Temperatures Figure 15. Switch Offset Voltage vs. LED Current Change in Breakdown Voltage (%) ilh1532ab_ Figure 13. Switch Breakdown Voltage vs. Temperature Change in Turn-on Time (%) 2ab_ I F = 5. ma I L =5 ma Figure 16. Turn-on Time vs. Temperature 5
6 Change in Turn-off Time (%) ilh1532ab_16 - IF = 5. ma IL =5mA Figure 17. Turn-off Time vs. Temperature 1 Turn-on Time (ms) I L =5mA - C 25 C 85 C ilh1532ab_ LED Forward Current (ma) 5 Figure 18. Turn-on Time vs. LED Current I L =5mA - C Turn-off Time (ms) C 85 C ilh1532ab_ LED Forward Current (ma) 3 5 Figure 19. Turn-off Time vs. LED Current 6
7 Package Dimensions in Inches (mm) DIP pin one ID.268 (6.81).255 (6.48) ISO Method A.45 (1.14).3 (.76) 4.39 (9.91).379 (9.63).31 (.79).15 (3.81).13 (3.3).3 (7.62).5 (1.27) 1.35 (.89).22 (.56) 3 9. (.51).18 (.46).12 (.3). (2.54).8 (.).25 (6.35).23 (5.84).13 (3.3).11 (2.79) i178 Package Dimensions in Inches (mm) SMD Pin one I.D..268 (6.81).255 (6.48). (2.54) R.1 (.25).3 (.76).7 (1.78).39 (9.91).379 (9.63).315 (8.) min.435 (11.5). (1.52) ISO Method A.45 (1.14).3 (.78).31 (.79).15 (3.81).13 (3.3) Radius.395 (1.3).375 (9.52).312 (7.).298 (7.52) 3 to7 ˇ i (1.27).8 (.25).4 (.1). (2.54). (1.2). (.51) 1 ˇ.315 (8.).1 (2.54) 7
8 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/5/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-725 Heilbronn, Germany Telephone: 49 () , Fax number: 49 ()
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