TCLT10.. Series. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. VDE Standards
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1 Optocoupler with Phototransistor Output Description The TCLT1.. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-lead SO6L package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. TCLT1.. Series Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I IV at mains voltage 3 V For appl. class I III at mains voltage 6 V according to VDE 884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. VDE Standards These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler for electrical safety requirements (will be replaced by IEC ) IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 65 Safety for mains-operated electronic and related household apparatus C Rev. A3, 19 Mar 1 1 (12)
2 TCLT1.. Series Order Instruction Ordering Code CTR Ranking Remarks TCLT 5 to 6% 4 Pin = Single channel TCLT1 4 to 8% 4 Pin = Single channel TCLT2 63 to 125% 4 Pin = Single channel TCLT3 to 2% 4 Pin = Single channel TCLT5 5 to 15% 4 Pin = Single channel TCLT6 to 3% 4 Pin = Single channel TCLT7 8 to 16% 4 Pin = Single channel TCLT8 13 to 26% 4 Pin = Single channel TCLT9 2 to 4% 4 Pin = Single channel Features Approvals: BSI: BS EN 43, BS EN 695 (BS 415), BS EN 695 (BS 72), Certificate number 781 and 742 Underwriters Laboratory (UL) 1577 recognized, file number E Double Protection CSA (C-UL) 1577 recognized file number E Double Protection VDE 884, Certificate number VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 8 kv peak Isolation test voltage (partial discharge test voltage) V pd = 1.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Creepage current resistance according to VDE 33/IEC 112 Comparative Tracking Index: CTI 175 Thickness through insulation.75 mm Creepage distance > 8 mm Tested acc. 695: Am4: 1997 clause General features: Low profile package CTR offered in 9 groups Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE 11 / resp. IEC 664) Climatic classification 55//21 (IEC 68 part 1) Special construction: Therefore, extra low coupling capacity of typical.2 pf, high Common Mode Rejection Low temperature coefficient of CTR Coupling System W 2 (12) Rev. A3, 19 Mar 1
3 Absolute Maximum Ratings Input (Emitter) TCLT1.. Series Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 s I FSM 1.5 A Power dissipation T amb 25C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) V IO 5 kv Total power dissipation T amb 25C P tot 25 mw Operating ambient temperature T amb 4 to + C range Storage temperature range T stg 4 to + C Soldering temperature T sd 235 C Rev. A3, 19 Mar 1 3 (12)
4 TCLT1.. Series Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = ± 5 ma V F V Junction capacitance V R = V, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = A V ECO 7 V Collector emitter cut-off current V CE = 2 V, I f =, E = I CEO 1 na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter saturation I F = 1 ma, I C = 1 ma V CEsat.3 V voltage Cut-off frequency V CE = 5 V, I F = 1 ma, f c 11 khz R L = Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = 5 ma TCLT CTR.5 6. V CE = 5 V, I F = 1 ma TCLT1 CTR.4.8 V CE = 5 V, I F = 1 ma TCLT2 CTR V CE = 5 V, I F = 1 ma TCLT3 CTR V CE = 5 V, I F = 1 ma TCLT1 CTR.13.3 V CE = 5 V, I F = 1 ma TCLT2 CTR V CE = 5 V, I F = 1 ma TCLT3 CTR.34.7 V CE = 5 V, I F = 5 ma TCLT5 CTR V CE = 5 V, I F = 5 ma TCLT6 CTR V CE = 5 V, I F = 5 ma TCLT7 CTR V CE = 5 V, I F = 5 ma TCLT8 CTR V CE = 5 V, I F = 5 ma TCLT9 CTR (12) Rev. A3, 19 Mar 1
5 Maximum Safety Ratings (according to VDE 884) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input (Emitter) TCLT1.. Series Parameters Test Conditions Symbol Value Unit Forward current I si 13 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25C P si 265 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 8 kv Safety temperature T si 15 C Insulation Rated Parameters (according to VDE 884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage Routine test %, t test = 1 s V pd 1.6 kv Partial discharge test voltage t Tr = 6 s, ttest = 1 s, V IOTM 8 kv Lot test (sample test) (see figure 2) V pd 1.3 kv Insulation resistance V IO = 5 V R IO 1 12 V IO = 5 V, R IO 1 11 T amb = C V IO = 5 V, R IO 1 9 T amb = 15C (construction test only) P tot Total Power Dissipation ( mw ) Phototransistor Psi ( mw ) IR-Diode Isi ( ma ) T si Safety Temperature ( C ) 15 V IOTM 1393 V Pd V IOWM V IORM t 1 t 1, t 2 = 1 to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s t Tr = 6 s t 3 t test t 4 t 2 t stres t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 884 Rev. A3, 19 Mar 1 5 (12)
6 TCLT1.. Series Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 2 ma, RL = (see figure 3) t d 3. s Rise time t r 3. s Turn-on time t on 6. s Storage time t s.3 s Fall time t f 4.7 s Turn-off time t off 5. s Turn-on time V S = 5 V, I F = 1 ma, RL = 1 k (see figure 4) t on 9. s Turn-off time t off 1. s I F I F + 5 V I C = 2 ma; adjusted through input amplitude I F R G = 5 t p T =.1 t p = 5 s 5 Channel I Channel II Oscilloscope R L = 1 M C L = 2 pf I C % 9% t p t Figure 1. Test circuit, non-saturated operation 1% t r t t d t s t f I F R G = 5 t p T =.1 t p = 5 s I F = 1 ma + 5 V I C t p t d t r t on (= t d + t r ) t on t off pulse duration t s delay time t f rise time t off (= t s + t f ) turn-on time Figure 3. Switching times storage time fall time turn-off time Channel I Oscilloscope 5 1 k Channel II R L > 1 M C L < 2 pf Figure 2. Test circuit, saturated operation 6 (12) Rev. A3, 19 Mar 1
7 Typical Characteristics (T amb = 25 C, unless otherwise specified) TCLT1.. Series P tot Total Power Dissipation ( mw ) 3 Coupled device 25 2 Phototransistor 15 IR-diode T amb Ambient Temperature ( C ) I CEO Collector Dark Current, with open Base ( na ) V CE =2V I F = T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature Figure 7. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ) I C Collector Current ( ma ) V CE =5V V F Forward Voltage ( V ) I F Forward Current ( ma ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =5mA T amb Ambient Temperature ( C ) 75 I C Collector Current ( ma ) I F =5mA mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Collector Emitter Voltage Rev. A3, 19 Mar 1 7 (12)
8 TCLT1.. Series V CEsat Collector Emitter Saturation Voltage ( V ) CTR=5% 1 1 1% 2% t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =5V R L = I C Collector Current ( ma ) I C Collector Current ( ma ) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Turn on / off Time vs. Collector Current CTR Current Transfer Ratio ( % ) 1 V CE =5V t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k t off t on I F Forward Current ( ma ) I F Forward Current ( ma ) Figure 11. Current Transfer Ratio vs. Forward Current Figure 13. Turn on / off Time vs. Forward Current Pin 1 Indication Type TCLT 91WTK Date Code (YM) System Letter Company Logo Production Location Figure 14. Marking example 8 (12) Rev. A3, 19 Mar 1
9 TCLT1.. Series Dimensions of TCLT1.. in mm Rev. A3, 19 Mar 1 9 (12)
10 TCLT1.. Series Dimensions of Reel in mm W 1 N A Reel Hub W Version Tape Width A N W 1 W 2 max G ± 1 ± Dimensions of Leader and Trailer in mm Trailer no devices devices Leader no devices End Start min. 2 min (12) Rev. A3, 19 Mar 1
11 TCLT1.. Series Dimensions of Tape in mm Rev. A3, 19 Mar 1 11 (12)
12 TCLT1.. Series Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () (12) Rev. A3, 19 Mar 1
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Ultrabright LED, 5 mm Untinted Non-Diffused \ Description The series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity and a very small emission angle is required.
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Small Signal Fast Switching Diodes Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices e2 N448 and N4448 respectively Lead (Pb)-free component Component in acc. to RoHS
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Small Signal Fast Switching Diodes Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices e2 N448 and N4448 respectively Lead (Pb)-free component Component in acc. to RoHS
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N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF96S Applications Input- and mixer stages especially VHF TV-tuners. Features
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N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF9 Applications Input- and mixer stages especially VHF- and UHF- tuners. Features
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Dual 1 Form A Solid State Relay Features Dual Channel (LH151) Current Limit Protection Isolation Test Voltage 53 V RMS Typical R ON 1 Ω Load Voltage 2 V Load Current 12 ma High Surge Capability Clean Bounce
More informationPart Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4
VISHAY 1N5550 to 1N5552 Standard Sinterglass Diode Features Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Medium switching for improved
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End of Life January-208 - Alternative Device: CNY7 HB, HB2, HB3 Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES A C NC 2 3 6 5 4 B C E Isolation test voltage: 4420 V RMS Coupling
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Standard Avalanche Sinterglass Diode BYW52 / 53 / 54 / 55 / 56 Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current
More informationBAV300 / 301 / 302 / 303
Small Signal Switching Diodes, High Voltage BAV300 / 30 / 302 / 303 Features Silicon Epitaxial Planar Diodes Saving space e2 Hermetic sealed parts Fits onto SOD323 / SOT23 footprints Electrical data identical
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MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide
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Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term
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TELUX LED Color Type Technology Angle of Half Intensity ± Red TLWR76.. AlInGaP on GaAs Yellow TLWY76.. AlInGaP on GaAs Softorange TLWO76.. AlInGaP on GaAs True Green TLWTG76.. InGaN on SiC 3 Blue Green
More informationParameter Test condition Symbol Value Unit Junction to ambient air on PC board. R thja 500 K/W 50 mm x 50 mm x 1.6 mm
Small Signal Zener Diodes Features Very sharp reverse characteristic Low reverse current level e2 Available with tighter tolerances Very high stability Low noise Lead (Pb)-free component Component in accordance
More informationParameter Test condition Symbol Value Unit Zener current (see Table "Electrical Characteristics") Power dissipation P tot 1.3
Zener Diodes Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating e The Zener voltages are graded according to the international E standard. Replace
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Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Lead (Pb)-free component Component in accordance to RoHS
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Charge Timer Description The molithic integrated bipolar circuit is a time controlled constant current charger. Selection of charge current versus timing is according to external components at pins 2,
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VISHY IL74/ ILD74/ ILQ74 Optocoupler, Phototransistor Output (Single, Dual, Quad hannel) Features IL74/ ILD74/ ILQ74 TTL ompatible Transfer Ratio, 35 % Typical oupling apacitance, pf Single, Dual, & Quad
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Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for
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PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
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HAA HAA3 HAA2 HAA4 DESCRIPTION The HAAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES Bi-polar
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MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon
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DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
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