BYT54. Fast Avalanche Sinterglass Diode VISHAY. Vishay Semiconductors
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1 VISHAY BYT54. Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Very fast rectification and switching diodes Mechanical Data Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-75, Method 226 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part Type differentiation Package BYT54A V R = 5 V; I FAV =.25 A SOD-57 BYT54B V R = V; I FAV =.25 A SOD-57 BYT54D V R = 2 V; I FAV =.25 A SOD-57 BYT54G V R = 4 V; I FAV =.25 A SOD-57 BYT54J V R = 6 V; I FAV =.25 A SOD-57 BYT54K V R = 8 V; I FAV =.25 A SOD-57 BYT54M V R = V; I FAV =.25 A SOD-57 Absolute Maximum Ratings Parameter Test condition Part Symbol Value Unit Reverse voltage = Repetitive see electrical characteristics BYT54A V R = V RRM 5 V peak reverse voltage BYT54B V R = V RRM V BYT54D V R = V RRM 2 V BYT54G V R = V RRM 4 V BYT54J V R = V RRM 6 V BYT54K V R = V RRM 8 V BYT54M V R = V RRM V Peak forward surge current t p = ms, half sinewave I FSM 3 A Document Number 863 Rev..6, 2-Aug-4
2 BYT54. VISHAY Parameter Test condition Part Symbol Value Unit Average forward current on PC board I FAV.75 A l = mm I FAV.25 A Junction and storage BYT54A T j = T stg - 55 to + 75 C temperature range BYT54B T j = T stg - 55 to + 75 C BYT54D T j = T stg - 55 to + 75 C BYT54G T j = T stg - 55 to + 75 C BYT54J T j = T stg - 55 to + 75 C BYT54K T j = T stg - 55 to + 75 C BYT54M T j = T stg - 55 to + 65 C Non repetitive reverse I (BR)R =.4 A BYT54J E R mj avalanche energy BYT54K E R mj BYT54M E R mj Maximum Thermal Resistance Parameter Test condition Symbol Value Unit Junction ambient l = mm, T L = constant R thja 45 K/W on PC board with spacing R thja K/W 25 mm Electrical Characteristics Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = A V F.5 V Reverse current V R = V RRM I R 5 µa V R = V RRM, T j = 5 C I R 5 µa Reverse recovery time I F =.5 A, I R = A, i R =.25 A t rr ns Typical Characteristics (T amb = 25 C unless otherwise specified) R thja - Therm. Resist. Junction/Ambient (K/W) l - Lead Length ( mm ) l T L = constant l I F - Forward Current ( A) T j =75 C T j =25 C V F - Forward Voltage (V) Figure. Max. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage 2 Document Number 863 Rev..6, 2-Aug-4
3 VISHAY BYT54. I FAV - Average Forward Current ( A ) half sinewave R thja = 45 K/W l=mm.2 R thja = K/W PCB:d=25mm T amb Ambient Temperature( C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature P Reverse Power Dissipation ( mw ) R P R R P R % V R T j Junction Temperature ( C ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature I R Reverse Current ( µ A ) C Diode Capacitance ( pf ) D f= MHz T j Junction Temperature ( C ) V R Reverse Voltage (V) Figure 4. Reverse Current vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 Cathode Identification 3.6 (.4)max. ISO Method E (.32) max. 26(.4) min. 4. (.56) max. 26(.4) min. Document Number 863 Rev..6, 2-Aug-4 3
4 BYT54. VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () Document Number 863 Rev..6, 2-Aug-4
5 This datasheet has been download from: Datasheets for electronics components.
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