N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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1 N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF9 Applications Input- and mixer stages especially VHF- and UHF- tuners. Features Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance Low input capacitance 3 G 2 D 2 G BF9 Marking: BF9 Plastic case (TO 5) 1 = Drain, 2 = Source, 3 = Gate 1, = Gate S Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test Conditions Type Symbol Value Unit Drain - source voltage V DS 12 V Drain current I D 3 ma Gate 1/Gate 2 - source peak current ±I G1/G2SM 1 ma Total power dissipation T amb 6 C P tot 2 mw Channel temperature T Ch 15 C Storage temperature range T stg 55 to +15 C Maximum Thermal Resistance T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Channel ambient on glass fibre printed board ( x 25 x 1.5) mm 3 R thcha 5 K/W plated with 35m Cu Document Number 57 FaxBack Rev., -Jul-99 1 ()
2 Electrical DC Characteristics T amb = 25 C, unless otherwise specified Parameter Test Conditions Type Symbol Min Typ Max Unit Drain - source I D = 1 A, V (BR)DS 12 V breakdown voltage V G1S = V G2S = V Gate 1 - source ±I G1S = 1 ma, ±V (BR)G1SS 7 1 V breakdown voltage V G2S = V DS = Gate 2 - source ±I G2S = 1 ma, ±V (BR)G2SS 7 1 V breakdown voltage V G1S = V DS = Gate 1 - source ±V G1S = 5 V, ±I G1SS 5 na leakage current V G2S = V DS = Gate 2 - source leakage current ±V G2S = 5 V, V G1S = V DS = ±I G2SS 5 na Drain current V DS = 15 V, V G1S =, BF9 I DSS 1 ma V G2S = V BF9A I DSS 1.5 ma BF9B I DSS ma Gate 1 - source V DS = 15 V, V G2S = V, V G1S(OFF) 2.5 V cut-off voltage I D = 2 A Gate 2 - source cut-off voltage V DS = 15 V, V G1S =, I D = 2 A V G2S(OFF) 2. V Electrical AC Characteristics V DS = V, I D = 1 ma, V G2S = V, f = 1 MHz, T amb = 25 C, unless otherwise specified Parameter Test Conditions Type Symbol Min Typ Max Unit Forward transadmittance y 21s 21 2 ms Gate 1 input capacitance C issg pf Gate 2 input capacitance V G1S =, V G2S = V C issg2 1.2 pf Feedback capacitance C rss 25 ff Output capacitance C oss 1.5 pf Power gain G S = 2 ms, G L =.5 ms, G ps 2 db f = 2 MHz G S = 3,3 ms, G L = 1 ms, G ps db f = MHz AGC range V G2S = to 2 V, G ps db f = MHz Noise figure G S = 2 ms, G L =.5 ms, F 1 db f = 2 MHz G S = 3,3 ms, G L = 1 ms, f = MHz F 1.5 db FaxBack () Document Number 57 Rev., -Jul-99
3 Common Source S Parameters V DS, = V, V G2S = V, Z = 5 T amb = 25 C, unless otherwise specified S11 S21 S12 S22 I D /ma f/mhz LOG ANG LOG ANG LOG ANG LOG ANG MAG MAG MAG MAG db deg db deg db deg db deg Document Number 57 FaxBack Rev., -Jul-99 3 ()
4 Typical Characteristics (T amb = 25 C unless otherwise specified) P tot Total Power Dissipation ( mw ) T amb Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature I D Drain Current ( ma ) V G1S = 1V V G2S Gate 2 Source Voltage ( V ) Figure. Drain Current vs. Gate 2 Source Voltage 5V V 3V 2V 1V I D Drain Current ( ma ) V G1S =.6V.2V 5.V V DS Drain Source Voltage ( V ).V.2V C issg1 Gate 1 Input Capacitance ( pf ) f=1mhz V G1S Gate 1 Source Voltage ( V ) Figure 2. Drain Current vs. Drain Source Voltage Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage I D Drain Current ( ma ) V 5V V 3V 2V 1V V G2S = 1V V G1S Gate 1 Source Voltage ( V ) Figure 3. Drain Current vs. Gate 1 Source Voltage C issg2 Gate 2 Input Capacitance ( pf ) V G1S = f=1mhz V G2S Gate 2 Source Voltage ( V ) Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage FaxBack () Document Number 57 Rev., -Jul-99
5 C oss Output Capacitance ( pf ) V G1S = f=1mhz V DS Drain Source Voltage ( V ) Figure 7. Output Capacitance vs. Drain Source Voltage Im ( y 11 ) ( ms ) f=13mhz MHz MHz 6 MHz I D =1mA 2 1MHz f=1...13mhz Re (y 11 ) ( ms ) Figure 1. Short Circuit Input Admittance S 21 Transducer Gain ( db ) f= MHz V G1S Gate 1 Source Voltage ( V ) V 3V 2V 1V.2V.V V G2S =.V Figure. Transducer Gain vs. Gate 1 Source Voltage y 21s Forward Transadmittance ( ms ) f=1mhz 1V I D Drain Current ( ma ) Figure 9. Forward Transadmittance vs. Drain Current 3V 2V Im ( y 21 ) ( ms ) f=1...13mhz 2mA I D =5mA 1mA 3 1MHz 35 13MHz Re (y 21 ) ( ms ) f=1mhz MHz 7MHz Figure 11. Short Circuit Forward Transfer Admittance Im ( y 22 ) ( ms ) f=13mhz 7MHz 3 2 MHz V DS =15V 1 I D =1mA 1MHz f=1...13mhz Re (y 22 ) ( ms ) 1MHz Figure 12. Short Circuit Output Admittance Document Number 57 FaxBack Rev., -Jul-99 5 ()
6 V DS = V, I D = 1 ma, V G2S = V, Z = 5 S 11 S 12 j.5 j j j.2 j MHz ÁÁÁ.2 ÁÁÁ.5 ÁÁ 1 ÁÁ 2 ÁÁ j.2 13MHz 1 j j.5 j j Figure 13. Input reflection coefficient S Figure 15. Reverse transmission coefficient S j.5 j j MHz 3 j.2 j Figure 1. Forward transmission coefficient j.2 j5 13MHz j.5 j j Figure 16. Output reflection coefficient FaxBack () Document Number 57 Rev., -Jul-99
7 Dimensions in mm Document Number 57 FaxBack Rev., -Jul-99 7 ()
8 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (197) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision /5/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-725 Heilbronn, Germany Telephone: 9 () , Fax number: 9 () FaxBack () Document Number 57 Rev., -Jul-99
N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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