Applications LED READY = READY LED READY LED. Charge mode indicator. max 140 C Shunt Sense Osc. Figure 1 Block diagram with external circuit

Size: px
Start display at page:

Download "Applications LED READY = READY LED READY LED. Charge mode indicator. max 140 C Shunt Sense Osc. Figure 1 Block diagram with external circuit"

Transcription

1 Charge Timer Description The molithic integrated bipolar circuit is a time controlled constant current charger. Selection of charge current versus timing is according to external components at pins 2, 3 and 4. For high current requirement, an external transistor is recommended in series with the battery. To protect the IC against high power loss (typically > 140 C), the oscillator is shut down Features Easy to run automous dual rate charger Constant charge current 3 h 24 h charge time programmable Integrated low cost dc regulator Integrated overtemperature protection Selectable charge mode indication Operation starts at the moment of battery insertion Final assembly test ability when the reference voltage is switched off (0 ). The same thing happens when there is a saturation of collector voltage at pin 1. When the overtemperature is reduced and the collector voltage is equal to supply voltage ( C = S ), charge time operation continues (see flow chart figure 4). Applications Cordless telephones Low cost battery charger- timer Entertainment Block Diagram LED Ch = Charge (Ch) mode LED READY = READY R C Power supply AC/DC Battery inserted LED Ch R 5 LED LED READY S 8 6 GND Charge mode indicator Power supply S = 3.5 to 12 Test mode 5 S TM max 140 C Timer and control logic Ref = 1.5 /0.1 /0 C 1 + Ref RC oscillator Shunt Sense Osc R R 4 3 C 4 Figure 1 Block diagram with external circuit Rev. A1: (11)

2 TELEFUNKEN Semiconductors Pin Description C 2 SENSE OSC LED GND S S TM Pin Symbol Function 1 C Collector terminal 2 2 Emitter shunt terminal 3 SENSE Amplifier SENSE input 4 OSC Oscillator input 5 S TM Test mode switch 6 S Supply voltage 7 GND Ground 8 LED Charge mode indicator Pin 1, Collector oltage C Terminal Pin 1 is an open collector output. When C 3, the charge cycle is switched off until it is above the supply voltage. The first eight divider stages can be tested directly. 256 input clocks at pin 4 create one clock at pin 5. Pin 2, Emitter Shunt Terminal The constant current source is supplied by the internal operational amplifier. The voltage across R 3 is determined via the internal reference source. I Ch = 3 /R 3 ( 3 = SENSE ) Pin 3, Operational Amplifier SENSE Input (Inverted) The voltage regulated current source has a closed loop with pin 2, pin 3, and resistor R 3. Pin 4, Oscillator Terminal (R 4 /C 4 ) Selection of current charge versus timing is according to the external circuit at pins 2, 3, and 4. Typical values are given in figure 3 and table page 3. Pin 5, Fast Test Mode for Charging Time Charging time is given by the operation. t ch 1 f OSC 2 n where: f osc = oscillator frequency (see figure 3) t ch = charge time n = frequency divider n = 2 26, if S TM = OPEN n = 2 17, if S TM = GND n = 2 8, if S TM = C Pin 4 Pin 5 Oscillator Pulse Test Mode Figure 2 Quick test timer 1/3 Example Assume a charge time of 6 h. Select the values of R 4 and C 4 from the tables on page 3. R 4 = 470 k C 4 = 680 pf There is a frequency of about 3100 Hz at pin 4. It is possible to test the charge time of 6 h by running through the charge cycle for a very short time. By connecting pin 5 with GND the test time is 42 s. By connecting pin 5 with pin 1 ( c ) the test time is reduced to about 82.4 ms. R 5 is connected in parallel to the red LED and provides a protective bypass function for the LED (see figure 1). Pin 6, Supply oltage, S S 3.1 power-on reset release (turn-on) S 2.9 undervoltage reset S 13 supply voltage limitation Pin 7, Ground Pin 8, Charge Mode Indicator It is an open-collector output, which supplies constant current to LED after the active charge phase has been terminated. max controls the function temperature to the final stage range, when the temperature is above 140 C, charge function is switched off. 2 (11) Rev. A1:

3 Charge Characteristics Charge Time Charge ttme Test = OPEN OSC Components R 4 C 4 [K] [pf] Frequency [Hz] Short Test Cycle Test = C [ms] Test = GND [s] 1 h h h h h h h h h min h min h min h min Charge Time Test Mode Open GND C f osc n = 26 n = 17 n = 8 1 KHz 18 h, 38 min 2 min, 11 s 256 ms 10 KHz 1 h, 51 min 13 s 25 ms 100 KHz 11 min, 11 s 1.3 s 2.5 ms Trickle Charge The trickle charge starts after the charge has been terminated. In this case the internal reference voltage is reduced from 1.5 up to about 0.1. This means the charge current is decreased by the factor K = 15 {K = 1.5 /0.1 }. Trickle current = I Ch / 15 + I 6 (supply current) + I 8 With resistor R 6 it is possible to reduce the trickle charge. See figure 7 and 8. f ( Hz ) R t =160k R t =330k R t =680k R t =1100k Figure 3 C t ( pf ) R t =82k Oscillator Rev. A1: (11)

4 TELEFUNKEN Semiconductors Battery inserted Turn on S > 3.5 Sense = 1.5 LED Ch ON Timer START S TM open GND mode S Divider T j > T max C > 2.7 Sense = 40 m interrupt charging LED Ch OFF Hold on timing T j > T max C > S Sense = 1.5 Continious charging LED Ch ON Continious timing End of timing LED Ch OFF LED READY ON Trickle charge mode Sense = 80 m Battery removed Undervoltage reset Figure 4 Flow chart 4 (11) Rev. A1:

5 Absolute Maximum Ratings Reference point Pin 7 (GND), unless otherwise specified. 20 Parameters Symbol alue Unit Supply current Pin 6 I S t 100 s is 100 Currents Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 8 I 1 I 2 I 3 I 4(osc) I TM I to A A oltages Pins 1, 3, 5, 6 and 8 Pin 2 Pin 4 Junction temperature T j 150 C Ambient temperature T amb 85 C Storage temperature range T stg 50 to +150 C Thermal Resistance Parameters Symbol alue Unit Junction ambient R thja DIP 8 SO 8 on PC-board SO 8 on ceramic SO 8 on ceramic with thermal compound K/W K/W K/W K/W Rev. A1: (11)

6 TELEFUNKEN Semiconductors Electrical Characteristics S = 6, T amb = 25C, reference point pin 7 (GND), unless otherwise specified. Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Supply voltage limitation Pin 6 S I S = 4 I S = Supply current S = 6 I S oltage monitoring Pin 6 Turn-on threshold TON Turn-off threshold TOFF Charge-mode indicator (LED) Pin 8 LED current I LED saturation voltage I 8 = m Leakage current I lkg A Collector terminal Pin 1 Open collector current I CO A Saturation threshold sat(on) sat(off) Shunt emitter current R 3 = 5.6 Pin 2 I Operational SENSE amplifier Pin 3 Input current SENSE = 0 I A Input voltage Ref = 1.5 Ref = 100 m Ref = m m Oscillator Pin 4 Leakage current 4 = 0 to 0.85 I lkg A Threshold voltage Upper T(u) m Frequency R 4 = 160 k, C 4 = 2.2 nf R 4 = 680 k, C 4 = 4.7 nf Test mode switch (S TM ) Pin 5 Input current 5 = 6 5 = 0 Output voltage High Low f osc I H 1.7 L Hz Hz 6 (11) Rev. A1:

7 Internal Temperature Switch The internal temperature monitoring is active, if the chip temperature rises above 140 C. Above this temperature the voltage at pin 3 goes to zero. Similarly the charge current, I Ch, reduces according to the relation: I Ch = SENSE / R 3 where I Ch = 1 to 2 (IC supply current) The oscillator is connected to GND via pin 3 ( SENSE ) which holds the present time status. When the chip temperature decreases below the transition value, all the functions are released and the charge time is continued. The process is reversible. If there is a higher power dissipation in the circuit (T j > 140 C) the temperature monitoring remains permanently activated (ON). The total cycle time is prolonged according to the interrupt time duration, see figure 5. Automatic Control Protection To reduce the design costs, it is possible to select the transformer for the minimum of the power supply required. The output stage of the control is selected so that it is switched off before saturation is attained ( CEsat = 2.7 ). In this case the voltage at pin 3 is kept at a value of zero. The charge current is also zero, and the transformer is w an open circuit impedance. The system becomes active again if c S. The advantage of the system is that if sags of duration appear in the mains voltage or if the transformers used are too small, the charge duration is increased while the charge capability remains the same (see figure 6) T j 140 C 130 C T j Charge current I C Timing Charge mode Counting timer t Figure 5 Charge duration in case of overtemperature C < S S 2.7 C 0 Charge current I C Timing Charge mode Counting timer t Figure 6 Charge duration in case of C Rev. A1: (11)

8 Application Notes Minimal Configuration Basic Example NiCd battery 750 h R = 510, 1/8 W Charging time: 3 h C=47F16 F, Charge current: R 3 = 6.2, 1/2 W 240, 1/3 C R 4 = 300 k Trickle charge: C 19 < 1/40 C 4 = 470 pf R 5 = 8.2, 1/2 W Basic Equations TELEFUNKEN Semiconductors R = 0.5 / IS IS = 1.8, typically R 5 = _LED Ch / (I Ch 20 ) Charge Current (I Ch ): I Ch = SENSE /R 3 SENSE = 1.48, typically Trickle Current (IT): I Ch = SENSE /R 3 + ILED + IS SENSE = 80 m, typically ILED = 4.5, typically Minimum Supply oltage No of Cells 1 2 DC Supply Minimum DC supply READY Ch R C R Special Requirements of Different Charge Times R 4 2 h 4 h 6 h 7 h 12 h R k 430 k 470 k 470 k 390 k C pf 470 pf 680 pf 1 nf 2.2 nf R 3 C 4 Special Requirements for Different Charge Current R 3 R Figure 7 Standard application 8 (11) Rev. A1:

9 with Booster and Trickle Charge Reduction Basic Example NiCd battery 1000 h Charging time: 2 h Charge current: 500 Trickle charge: 22 < 1/22 C Minimum Supply oltage R = 510, 1/8 W C = 100 F, 16 R 3 = 3, 1 W R 4 = 300 k C 4 = 330 pf R 5 = 3.9, 1 W C 1 = 1 F Basic Equations R = 0.5 / IS R 5 = _LED Ch / (I Ch 20 ) Charge Current (I Ch ) I Ch = SENSE / R 3 SENSE = 1.48, typically Trickle Current (IT) I Ch = SENSE /R 3 + ILED + IS I6 SENSE = 80 m, typically ILED = 4.5, typically IS = 1.8, typically Trickle Charge Reduction (I6) I6 = ( battery + D1 )/R6 D1 = 0.75 No of Cells 1 2 DC Supply Minimum DC supply BYW52 D 1 R C R 6 READY S1 Special Requirements for Different Charge Times C 1 2 h 4 h 6 h 7 h 12 h R k 430 k 470 k 470 k 390 k C pf 470 pf 680 pf 1 nf 2.2 nf BD 136 or BC Special Requirements for Different Charge Current R 3 R R 5 Ch S1: use for test only R3 R 4 C 4 R 6 = 560, reduce trickle charge Figure 8 Application for charge current > 250 Rev. A1: (11)

10 TELEFUNKEN Semiconductors Dimensions in mm Package: DIP Package: SO (11) Rev. A1:

11 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are kwn as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. arious national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are t manufactured with ozone depleting substances and do t contain such substances. We reserve the right to make changes to improve technical design and may do so without further tice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D Heilbronn, Germany Telephone: 49 (0) , Fax number: 49 (0) Rev. A1: (11)

BFQ65. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance

BFQ65. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance Silicon NPN Planar R Transistor Applications R-amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling. eatures High power

More information

BPW82. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

BPW82. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings Silicon PIN Photodiode BPW82 Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs

More information

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features Silicon NPN Planar RF Transistor BFS17/BFS17R/BFS17W Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features High power gain SMD-package

More information

T j = 25 C Parameter Test Conditions Type Symbol Value Unit Reverse voltage, repetitive peak

T j = 25 C Parameter Test Conditions Type Symbol Value Unit Reverse voltage, repetitive peak Fast Recovery Silicon Power Rectifier BYT12P/6A/8A Features Multiple diffusion Mesa glass passivated Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery

More information

RF amplifier up to GHz range specially for wide band antenna amplifier.

RF amplifier up to GHz range specially for wide band antenna amplifier. Silicon NPN Planar RF Transistor BFR91 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 R thja 450 K/W plated with 35m Cu

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 R thja 450 K/W plated with 35m Cu Silicon NPN Planar RF Transistor BFR92 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information

RF amplifier up to GHz range specially for wide band antenna amplifier.

RF amplifier up to GHz range specially for wide band antenna amplifier. Silicon NPN Planar RF Transistor BFR91A Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode. Low feedback capacitance Low noise figure

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode. Low feedback capacitance Low noise figure N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Electrostatic sensitive device. Observe precautions for handling. Input and mixer stages especially for VHF TV-tuners. Features

More information

BPW34. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

BPW34. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings Silicon PIN Photodiode BPW34 Description The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement

More information

Transmissive Optical Sensor without Aperture

Transmissive Optical Sensor without Aperture TCST/ TCST2 Transmissive Optical Sensor without Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical

More information

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu Silicon NPN Planar RF Transistor BFR96TS Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features

More information

Multichannel Optocoupler with Phototransistor Output

Multichannel Optocoupler with Phototransistor Output Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp.

More information

BC546 / 547 / 548. Small Signal Transistors (NPN) Vishay Semiconductors

BC546 / 547 / 548. Small Signal Transistors (NPN) Vishay Semiconductors Small Signal Transistors (NPN) Features NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available

More information

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output TCST11. up to TCST23. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face

More information

GaAs Infrared Emitting Diodes in ø 5 mm (T 1) Package

GaAs Infrared Emitting Diodes in ø 5 mm (T 1) Package GaAs Infrared Emitting Diodes in ø 5 mm (T 1) Package TSUS54. Description TSUS54. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue grey tinted plastic package.

More information

Low Current 13 mm Seven Segment Display

Low Current 13 mm Seven Segment Display Low Current 13 mm Seven Segment Display TDSL51. Color Type Circuitry High efficiency red TDSL515 Common anode High efficiency red TDSL516 Common cathode Description The TDSL51. series are 13 mm character

More information

Reflective Optical Sensor with Transistor Output

Reflective Optical Sensor with Transistor Output Reflective Optical Sensor with Transistor Output Description The has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of

More information

BPW24R. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

BPW24R. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings Silicon PIN Photodiode BPW24R Description BPW24R is a high sensitive silicon planar photodiode in a standard TO 18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives

More information

BYW52 / 53 / 54 / 55 / 56

BYW52 / 53 / 54 / 55 / 56 Standard Avalanche Sinterglass Diode Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications Rectification,

More information

e3 Pb TLRG / H / O / P / Y440. Resistor LED for 12 V Supply Voltage VISHAY Vishay Semiconductors

e3 Pb TLRG / H / O / P / Y440. Resistor LED for 12 V Supply Voltage VISHAY Vishay Semiconductors VISHAY TLRG / H / O / P / Y. Resistor LED for 1 V Supply Voltage Description These devices are developed for the automotive industry and other industries which use 1 V sources. The TLR.. series contains

More information

High Intensity LED, ø 5 mm Untinted Non-Diffused

High Intensity LED, ø 5 mm Untinted Non-Diffused High Intensity LED, ø 5 mm Untinted Non-Diffused Color Type Technology Angle of Half Intensity ± TLHK5.. AlInGaP on GaAs 9 Yellow TLHE5.. AlInGaP on GaAs 9 TLHG5.. GaP on GaP 9 Pure green TLHP5.. GaP on

More information

SFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors

SFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors SFH6A / SFH66 Optocoupler, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS Fast Switching Times Low CTR Degradation Low Coupling

More information

TEMD5000. Silicon PIN Photodiode. Vishay Semiconductors. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

TEMD5000. Silicon PIN Photodiode. Vishay Semiconductors. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings Silicon PIN Photodiode TEMD5000 Description TEMD5000 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement

More information

BPW24R. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings

BPW24R. Silicon PIN Photodiode. Vishay Telefunken. Description. Features. Applications High speed photo detector. Absolute Maximum Ratings Silicon PIN Photodiode BPW24R Description BPW24R is a high sensitive silicon planar photodiode in a standard TO 18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives

More information

TSUS540. Infrared Emitting Diode, 950 nm, GaAs VISHAY. Vishay Semiconductors

TSUS540. Infrared Emitting Diode, 950 nm, GaAs VISHAY. Vishay Semiconductors VISHAY TSUS54. Infrared Emitting Diode, 95 nm, GaAs Description TSUS54. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The

More information

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W Silicon NPN Planar RF Transistor Features High power gain Low noise figure Lead (Pb)-free component Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC e E B C Applications RF amplifier up to GHz

More information

Subminiature Transmissive Optical Sensor with Phototransistor Output

Subminiature Transmissive Optical Sensor with Phototransistor Output Subminiature Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light source and the detector is located face to face on the same

More information

e3 Pb TLRG / H / O / Y4420 Resistor LED for 12 V Supply Voltage VISHAY Vishay Semiconductors

e3 Pb TLRG / H / O / Y4420 Resistor LED for 12 V Supply Voltage VISHAY Vishay Semiconductors TLRG / H / O / Y Resistor LED for 1 V Supply Voltage Description These devices are developed for the automotive industry with special requirements as for EMC (electro magnetic compatibility) in motor vehicles

More information

Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 300 K/W

Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 300 K/W ener Diodes Features Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization 94 9367 Mechanical Data

More information

BPW20RF. Silicon PN Photodiode. Vishay Semiconductors. Description. Features. Applications. Absolute Maximum Ratings

BPW20RF. Silicon PN Photodiode. Vishay Semiconductors. Description. Features. Applications. Absolute Maximum Ratings Silicon PN Photodiode Description BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO 5 case, especially designed for high precision linear applications. Due to its extremely high

More information

e3 Pb TLMO / S / Y300. Low Current SMD LED VISHAY Vishay Semiconductors

e3 Pb TLMO / S / Y300. Low Current SMD LED VISHAY Vishay Semiconductors VISHAY TLMO / S / Y3. Low Current SMD LED Description These new devices have been designed to meet the increasing demand for AllnGaP based low current SMD LEDs. The package of the TLM.3. is the PLCC-2

More information

TLCW5100. Ultrabright White LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors

TLCW5100. Ultrabright White LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors Ultrabright White LED, 5 mm Untinted Non-Diffused Description The series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted

More information

BYT54. Fast Avalanche Sinterglass Diode VISHAY. Vishay Semiconductors

BYT54. Fast Avalanche Sinterglass Diode VISHAY. Vishay Semiconductors VISHAY BYT54. Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Very fast rectification and

More information

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode BF91 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low

More information

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode VISHAY BF9 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback

More information

e3 Pb TLMK310. High Intensity SMD LED VISHAY Vishay Semiconductors

e3 Pb TLMK310. High Intensity SMD LED VISHAY Vishay Semiconductors High Intensity SMD LED Description This device has been designed to meet the increasing demand for AlInGaP technology. The package of the is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists

More information

TLMPG / TLMYG330. Power SMD LED in PLCC-2 Package VISHAY. Vishay Semiconductors

TLMPG / TLMYG330. Power SMD LED in PLCC-2 Package VISHAY. Vishay Semiconductors VISHAY TLMPG / TLMYG33. Power SMD LED in PLCC- Package Description The TLM.33.. series is an advanced modification of the Vishay TLM.31..series. It is designed to incorporate larger chips, therefore, capable

More information

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF96S Applications Input- and mixer stages especially VHF TV-tuners. Features

More information

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF9 Applications Input- and mixer stages especially VHF- and UHF- tuners. Features

More information

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel N8W-V Small Signal Fast Switching Diode Features These diodes are also available in other case styles including the DO case with the type designation N8, the e MiniMELF case with the type designation LL8,

More information

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw DZ-V-Series Small Signal Zener Diodes, Dual Features These diodes are available in other case styles and configurations including: the dual diode common anode configuration e with type designation AZ,

More information

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features Breakdown Voltage, 500 V RMS No Base Terminal Connection for Improved Common Mode Interface Immunity Long Term Stability Industry Standard

More information

ILD620/ 620GB / ILQ620/ 620GB

ILD620/ 620GB / ILQ620/ 620GB Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) Features Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 High Collector-Emitter Voltage,

More information

BYW52 / 53 / 54 / 55 / 56

BYW52 / 53 / 54 / 55 / 56 Standard Avalanche Sinterglass Diode BYW52 / 53 / 54 / 55 / 56 Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current

More information

LH1532AAC/ AACTR/ AB. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors

LH1532AAC/ AACTR/ AB. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors Dual 1 Form A Solid State Relay Features Dual Channel (LH15) Current Limit Protection Isolation Test Voltage 53 V RMS Typical R ON Ω Load Voltage 35 V High Surge Capability Clean Bounce Free Switching

More information

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors Small Signal Switching Diodes, High Voltage BAV7/8/9/20/2 Features Silicon Epitaxial Planar Diodes Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications

More information

Parameter Test condition Symbol Value Unit Zener current (see Table "Electrical Characteristics") Power dissipation P tot 1.3

Parameter Test condition Symbol Value Unit Zener current (see Table Electrical Characteristics) Power dissipation P tot 1.3 Zener Diodes Features Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating e The Zener voltages are graded according to the international E standard. Replace

More information

TLCR5800, TLCY5800, TLCTG5800, TLCB5800

TLCR5800, TLCY5800, TLCTG5800, TLCB5800 Ultrabright LED, 5 mm Untinted Non-Diffused \ Description The series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity and a very small emission angle is required.

More information

BAV100/101/102/103. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

BAV100/101/102/103. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors Small Signal Switching Diodes, High Voltage BAV/0/02/03 Features Silicon Epitaxial Planar Diodes Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications

More information

Parameter Test condition Symbol Value Unit Junction to ambient air on PC board. R thja 500 K/W 50 mm x 50 mm x 1.6 mm

Parameter Test condition Symbol Value Unit Junction to ambient air on PC board. R thja 500 K/W 50 mm x 50 mm x 1.6 mm Small Signal Zener Diodes Features Very sharp reverse characteristic Low reverse current level e2 Available with tighter tolerances Very high stability Low noise Lead (Pb)-free component Component in accordance

More information

TCLT10.. Series. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. VDE Standards

TCLT10.. Series. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. VDE Standards Optocoupler with Phototransistor Output Description The TCLT1.. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-lead SO6L package. The elements

More information

SFH612A/ SFH655A. Pb Pb-free. Optocoupler, Photodarlington Output. Vishay Semiconductors

SFH612A/ SFH655A. Pb Pb-free. Optocoupler, Photodarlington Output. Vishay Semiconductors Optocoupler, Photodarlington Output Features High Isolation Test Voltage 5300 V RMS Standard Plastic DIP-4 Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1

More information

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack Small Signal Schottky Diode Features For general purpose applications. This diode features very low turn-on voltage and fast switching. This device is pro- e2 tected by a PN junction guard ring against

More information

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS e3 Fast Switching Times Low CTR Degradation

More information

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors Small Signal Fast Switching Diodes Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices e2 N448 and N4448 respectively Lead (Pb)-free component Component in acc. to RoHS

More information

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors Small Signal Fast Switching Diodes Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices e2 N448 and N4448 respectively Lead (Pb)-free component Component in acc. to RoHS

More information

Color Type Technology

Color Type Technology TELUX LED Color Type Technology Angle of Half Intensity ± Red TLWR76.. AlInGaP on GaAs Yellow TLWY76.. AlInGaP on GaAs Softorange TLWO76.. AlInGaP on GaAs True Green TLWTG76.. InGaN on SiC 3 Blue Green

More information

Part Ordering code Type Marking Remarks LL42 LL42-GS18 or LL42-GS08 - Tape and Reel LL43 LL43-GS18 or LL43-GS08 - Tape and Reel

Part Ordering code Type Marking Remarks LL42 LL42-GS18 or LL42-GS08 - Tape and Reel LL43 LL43-GS18 or LL43-GS08 - Tape and Reel Small Signal Schottky Diodes Features For general purpose applications These diodes feature very low turn-on voltage and fast switching. e2 These devices are protected by a PN junction guard ring against

More information

Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process

Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process TCPT12 Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process Description The TCPT12 is a compact transmissive sensor that includes

More information

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel Small Signal Fast Switching Diodes Features Silicon epitaxial planar diodes Electrically equivalent diodes: e2 N448 - N94 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

More information

Part Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4

Part Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4 VISHAY 1N5550 to 1N5552 Standard Sinterglass Diode Features Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Medium switching for improved

More information

TCET110.(G) up to TCET4100. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards

TCET110.(G) up to TCET4100. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards Optocoupler with Phototransistor Output Description The TCET11./ TCET2/ TCET4 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic

More information

BYT52. Fast Avalanche Sinterglass Diode. Vishay Semiconductors

BYT52. Fast Avalanche Sinterglass Diode. Vishay Semiconductors Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Lead (Pb)-free component Component in accordance to RoHS

More information

BAV300 / 301 / 302 / 303

BAV300 / 301 / 302 / 303 Small Signal Switching Diodes, High Voltage BAV300 / 30 / 302 / 303 Features Silicon Epitaxial Planar Diodes Saving space e2 Hermetic sealed parts Fits onto SOD323 / SOT23 footprints Electrical data identical

More information

Application Note 02_01 TELUX

Application Note 02_01 TELUX Specification, Thermal management and design-in 1. Introduction The performance and reliability of TELUX LED are mainly determined by a proper thermal management of the complete lamp system. The thermal

More information

LH1522AB/ AAC/ AACTR. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors

LH1522AB/ AAC/ AACTR. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors Dual 1 Form A Solid State Relay Features Dual Channel (LH151) Current Limit Protection Isolation Test Voltage 53 V RMS Typical R ON 1 Ω Load Voltage 2 V Load Current 12 ma High Surge Capability Clean Bounce

More information

TLWR9.2. TELUX. Vishay Semiconductors

TLWR9.2. TELUX. Vishay Semiconductors TELUX Description The TELUX series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection FEATURES A 6 B Current transfer ratio (see order information) C 2 5 C Isolation test voltage 5300 V RMS Lead (Pb)-free component NC 3 4 E Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

More information

ILD1/ 2/ 5 / ILQ1/ 2/ 5

ILD1/ 2/ 5 / ILQ1/ 2/ 5 ILD/ 2/ 5 / ILQ/ 2/ 5 Optocoupler, Phototransistor Output (Dual, Quad hannel) Features urrent Transfer Ratio at I F = 0 m Isolation Test Voltage, 5300 V RMS Lead-free component omponent in accordance to

More information

TEMD5020. Silicon PIN Photodiode. Vishay Semiconductors

TEMD5020. Silicon PIN Photodiode. Vishay Semiconductors TEMD52 Silicon PIN Photodiode Description TEMD52 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 4.4 mm 2 sensitive area, detecting

More information

4N25/ 4N26/ 4N27/ 4N28

4N25/ 4N26/ 4N27/ 4N28 Optocoupler, Phototransistor Output, With Base Connection Features Isolation Test Voltage 5300 V RMS Interfaces with Common Logic Families Input-output Coupling Capacitance < pf Industry Standard Dual-in-line

More information

IL74/ ILD74/ ILQ74. Optocoupler, Phototransistor Output (Single, Dual, Quad Channel) VISHAY. Vishay Semiconductors

IL74/ ILD74/ ILQ74. Optocoupler, Phototransistor Output (Single, Dual, Quad Channel) VISHAY. Vishay Semiconductors VISHY IL74/ ILD74/ ILQ74 Optocoupler, Phototransistor Output (Single, Dual, Quad hannel) Features IL74/ ILD74/ ILQ74 TTL ompatible Transfer Ratio, 35 % Typical oupling apacitance, pf Single, Dual, & Quad

More information

4N35/ 4N36/ 4N37/ 4N38

4N35/ 4N36/ 4N37/ 4N38 Optocoupler, Phototransistor Output, With Base Connection Features Isolation Test Voltage 5300 V RMS Interfaces with common logic families Input-output coupling capacitance < pf Industry Standard Dual-in

More information

5-V Low-Drop Fixed Voltage Regulator TLE 4269

5-V Low-Drop Fixed Voltage Regulator TLE 4269 5-V Low-Drop Fixed Voltage Regulator TLE 4269 Features Output voltage tolerance ±2 % 15 ma current capability Very low current consumption Early warning Reset output low down to V Q = 1 V Overtemperature

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

Low Drop Voltage Regulator TLE 4295

Low Drop Voltage Regulator TLE 4295 Low Drop Voltage Regulator TLE 4295 Features Four versions: 2.6 V, 3.0 V, 3.3 V, 5.0 V tolerance ±4% Very low drop voltage Output current: 30 ma Power fail output Low quiescent current consumption Wide

More information

5-V Low Drop Fixed Voltage Regulator TLE 4275

5-V Low Drop Fixed Voltage Regulator TLE 4275 5-V Low Drop Fixed Voltage Regulator TLE 4275 Features Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V Q = 1 V Very low-drop voltage Short-circuit-proof

More information

5-V Low Drop Voltage Regulator TLE 4290

5-V Low Drop Voltage Regulator TLE 4290 5-V Low Drop Voltage Regulator TLE 429 Features Output voltage 5 V ± 2% Very low current consumption 45 ma current capability Power Good Feature Very low-drop voltage Short-circuit-proof Reverse polarity

More information

5-V Low Drop Fixed Voltage Regulator TLE 4279

5-V Low Drop Fixed Voltage Regulator TLE 4279 5-V Low Drop Fixed Voltage Regulator TLE 4279 Features Output voltage tolerance ±2% 15 ma current capability Very low current consumption Early warning Reset output low down to V Q = 1 V Overtemperature

More information

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative

More information

5V/400mA Low Drop Voltage ILE4275 TECHNICAL DATA

5V/400mA Low Drop Voltage ILE4275 TECHNICAL DATA TECHNICAL DATA 5V/400mA Low Drop Voltage ILE4275 is integrated circuits of voltage regulator 5V/400 ma with low-drop voltage. The IC of voltage regulator 5V/400 ma are purposed to supply DC voltage 5V

More information

Low Drop Voltage Regulator TLE 4296

Low Drop Voltage Regulator TLE 4296 Low Drop Voltage Regulator TLE 4296 Features Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption

More information

5-V Low Drop Fixed Voltage Regulator TLE

5-V Low Drop Fixed Voltage Regulator TLE 5- Low Drop Fixed oltage Regulator TLE 471- Features Output voltage tolerance ±% Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 4 Overvoltage protection

More information

5-V Low Drop Fixed Voltage Regulator TLE 4299

5-V Low Drop Fixed Voltage Regulator TLE 4299 5-V Low Drop Fixed Voltage Regulator TLE 4299 Features Output voltage 5 V ± 2% 150 ma Output current Extreme low current consumption typical 65 µa in ON state Inhibit function: Below 1 µa current consumption

More information

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both

More information

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power

More information

Power SMD LED CLCC-6 Warm White

Power SMD LED CLCC-6 Warm White Power SMD LED CLCC-6 Warm White VLMW611. 2623 DESCRIPTION The VLMW611. is one of the most robust and light efficient LEDs in the market. Its ceramic package makes it the ideal light source in applications

More information

FPF1007-FPF1009 IntelliMAX Advanced Load Products

FPF1007-FPF1009 IntelliMAX Advanced Load Products FPF07-FPF09 IntelliMAX Advanced Load Products Features 1.2 to 5.5 V Input Voltage Range Typical R ON = 30 mω at = 5.5 V Typical R ON = 40 mω at = 3.3 V Fixed Three Different Turn-on Rise Time µs / 80 µs

More information

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering

More information

Low Drop Voltage Regulator TLE

Low Drop Voltage Regulator TLE Low Drop Voltage Regulator TLE 4296-2 Features Two versions: 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption Wide operation

More information

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO

More information

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

More information

5-V Low Drop Fixed Voltage Regulator TLE

5-V Low Drop Fixed Voltage Regulator TLE 5-V Low Drop Fixed Voltage Regulator TLE 427-2 Features Output voltage tolerance ±2% 65 ma output current capability Low-drop voltage Reset functionality Adjustable reset time Suitable for use in automotive

More information

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding

More information

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

More information

Regulated 3.3V Charge Pump MAX679

Regulated 3.3V Charge Pump MAX679 19-1217; Rev ; 4/97 Regulated 3.3 Charge Pump General Description The step-up, regulated charge pump generates a 3.3 ±4% output voltage from a 1.8 to 3.6 input voltage (two alkaline, NiCd, or NiMH; or

More information

5-V Low Drop Voltage Regulator TLE 4263

5-V Low Drop Voltage Regulator TLE 4263 5- Low Drop oltage Regulator TLE 4263 Features Output voltage tolerance ±2% 2 ma output current capability Low-drop voltage ery low standby current consumption Overtemperature protection Reverse polarity

More information

Figure 1. Pinout: 16 Lead Packages Conductors (Top View) ORDERING INFORMATION Figure 2. Logic Symbol PIN ASSIGNMENT

Figure 1. Pinout: 16 Lead Packages Conductors (Top View) ORDERING INFORMATION Figure 2. Logic Symbol PIN ASSIGNMENT The MC74AC138/74ACT138 is a high speed 1 of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input enables allow parallel

More information

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5401. PNP Silicon. These are Pb Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage

More information